DYNEX MAS5114LS, MAS5114LL, MAS5114LD, MAS5114CE, MAS5114CD Datasheet

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MA5114
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The MA5114 4k Static RAM is configured as 1024 x 4 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
FEATURES
3µm CMOS-SOS Technology
Latch-up Free
Fast Access Time 90ns Typical
Total Dose 10
6
Rad(Si)
Transient Upset >10
10
Rad(Si)/sec
SEU <10
-10
Errors/bitday
Single 5V Supply
Three State Output
Low Standby Current 50µA Typical
-55°C to +125°C Operation
All Inputs and Outputs Fully TTL or CMOS
Compatible
Fully Static Operation
Data Retention at 2V Supply
Figure 2: Block Diagram
Operation Mode CS WE I/O Power
Read L H D OUT ISB1
Write L L D IN
Standby H X High Z ISB2
Figure 1: Truth Table
MA5114
Radiation hard 1024x4 Bit Static RAM
Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000
MA5114
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Symbol Parameter Min. Max. Units
V
CC
Supply Voltage -0.5 7 V
V
I
Input Voltage -0.3 V
DD
+0.3 V
T
A
Operating Temperature -55 125 °C
T
S
Storage Temperature -65 150 °C
Figure 3: Absolute Maximum Ratings
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at T
A
= -55°C to +125°C with V
DD
= 5V ±10% and to post 100k Rad(Si) total dose
radiation at T
A
= 25°C with V
DD
= 5V ±10% (characteristics at higher radiation levels available on request).
2. Worst case at T
A
= +125°C, guaranteed but not tested at T
A
= -55°C.
GROUP A SUBGROUPS 1, 2, 3.
Symbol Parameter Conditions Min. Typ. Max. Units
V
DD
Supply voltage - 4.5 5.0 5.5 V
V
lH
Input High Voltage - V
DD
/2 - V
DD
V
V
lL
Input Low Voltage - V
SS
- 0.8 V
V
OH
Output High Voltage I
OH1
= -1mA 2.4 - - V
V
OL
Output Low Voltage I
OL
= 2mA - - 0.4 V
I
LI
Input Leakage Current (note 2) All inputs except CS --±10 µA
I
LO
Output Leakage Current (note 2) Output disabled, V
OUT
= V
SS
or V
DD
--±20 µA
I
PUI
Input Pull-Up Current V
IN
= V
SS
on CS input only - - -100 µA
I
PDI
Input Leakage Current V
IN
= V
SS
on CS input only - - 5 µA
I
DD
Power Supply Current f
RC
= 1MHz, CS = 50% mark:space- 12 16 mA
I
SB1
Selected Supply Current CS = V
SS
-2535mA
I
SB2
Standby Supply Current Chip disabled - 50 3000 µA
Figure 4: Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
V
DR
V
CC
for Data Retention CS = V
DR
2.0 - - V
I
DDR
Data Retention Current CS = V
DR
, V
DR
= 2.0V - 30 2000 µA
Figure 5: Data Retention Characteristics
CHARACTERISTICS AND RATINGS
MA5114
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AC CHARACTERISTICS
Conditions of Test for Tables 5 and 6:
1. Input pulse = V
SS
to 3.0V.
2. Times measurement reference level = 1.5V.
3. Transition is measured at ±500mV from steady state.
4. This parameter is sampled and not 100% tested.
Notes for Tables 6 and 7:
Characteristics apply to pre-radiation at T
A
= -55°C to +125°C with V
DD
= 5V±10% and to post 100k Rad(Si) total dose radiation
at T
A
= 25°C with V
DD
= 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.
Symbol Parameter Min Max Units
T
AVAVR
Read Cycle Time 135 - ns
T
AVQV
Address Access Time - 135 ns
T
ELQV
Chip Select to Output Valid - 135 ns
T
ELQX
(3,4) Chip Select to Output Active 10 - ns
T
ELQZ
(3,4) Chip Select to Output Tri State 10 50 ns
T
AXQX
Output Hold from Address Change 10 - ns
Figure 6: Read Cycle AC Electrical Characteristics
Symbol Parameter Min Max Units
T
AVAVW
Write Cycle Tlme 135 - ns
T
AVWL
Address Set Up Time 10 - ns
T
WLWH
Write Pulse Width 50 - ns
T
WHAV
Write Recovery Time 5 - ns
T
DVWH
Data Set Up Time 35 - ns
T
NHDX
Data Hold Time 5 - ns
T
WLQZ
(3,4) Write Enable to Output Tri State 10 50 ns
T
ELWL
Chip Selection to Write Low 25 - ns
T
ELWH
Chip Selection to End of Write 85 - ns
T
AVWH
Address Valid to End of Write 80 - ns
T
WHQX
(3,4) Output Active from End to Write 5 - ns
Figure 7: Write Cycle AC Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
C
IN
Input Capacitance V
l
= 0V - 6 10 pF
C
OUT
Output Capacitance V
O
= 0V - 8 12 pF
Note: T
A
= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 8: Capacitance
MA5114
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Symbol Parameter Conditions
F
T
Basic Functionality V
DD
= 4.5V - 5.5V, FREQ = 1MHz
V
IL
= V
SS
, V
IH
= V
DD
, V
OL
1.5V, V
OH
1.5V
TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B
Figure 9: Functionality
Subgroup Definition
1 Static characteristics specified in Tables 4 and 5 at +25°C
2 Static characteristics specified in Tables 4 and 5 at +125°C
3 Static characteristics specified in Tables 4 and 5 at -55°C
7 Functional characteristics specified in Table 9 at +25°C
8A Functional characteristics specified in Table 9 at +125°C
8B Functional characteristics specified in Table 9 at -55°C
9 Switching characteristics specified in Tables 6 and 7 at +25°C
10 Switching characteristics specified in Tables 6 and 7 at +125°C
11 Switching characteristics specified in Tables 6 and 7 at -55°C
Figure 10: Definition of Subgroups
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