DIODES TB3100H, TB2600H, TB0900H, TB1800H, TB1500H Datasheet

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DS30360 Rev. 3 - 2 1 of 4 TB0640H - TB3500H
TB0640H - TB3500H
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR
SURGE PROTECTIVE DEVICE
Features
· 100A Peak Pulse Current @ 10/1000ms
· 400A Peak Pulse Current @ 8/20ms
· 58 - 320V Stand-Off Voltages
· Bi-Directional Protection In a Single Device
· High Off-State impedance and Low On-State
Voltage
Mechanical Data
· Case: SMB, Molded Plastic
· Plastic Material: UL Flammability
Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
· Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
· Weight: 0.093 grams (approx.)
· Marking: Date Code & Marking Code (See Page 4)
· Ordering Information: See Page 4
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
B
A
C
D
F
H
E
G
Characteristic Symbol Value Unit
Non-Repetitive Peak Impulse Current @10/1000us
I
pp
100 A
Non-Repetitive Peak On-State Current @8.3ms (one-half cycle)
I
TSM
50 A
Junction Temperature Range
T
j
-40 to +150 °C
Storage Temperature Range
T
STG
-55 to +150 °C
Thermal Resistance, Junction to Lead
R
qJL
20 °C/W
Thermal Resistance, Junction to Ambient
R
qJA
100 °C/W
Typical Positive Temperature Coefficient for Breakdown Voltage
DVBR/DT
j
0.1 %/°C
SMB
Dim Min Max
A
4.06 4.57
B
3.30 3.94
C
1.96 2.21
D
0.15 0.31
E
5.21 5.59
F
0.05 0.20
G
2.01 2.62
H
0.76 1.52
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Maximum Rated Surge Waveform
Waveform Standard Ipp (A)
2/10 us GR-1089-CORE 500
8/20 us IEC 61000-4-5 400
10/160 us FCC Part 68 250
10/700 us ITU-T, K20/K21 200
10/560 us FCC Part 68 160
10/1000 us GR-1089-CORE 100
0
TIME
100
50
0
I , PEAK PULSE CURRENT (%)
PP
Peak Value (I )
pp
Half Value
t = rise time to peak value
r
t = decay time to half value
p
t
r
t
p
TCUDORP WEN
DS30360 Rev. 3 - 2 2 of 4 TB0640H - TB3500H
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
V
DRM
Breakover
Voltage
On-State
Voltage
@ I
T
= 1A
Breakover
Current
I
BO
Holding Current
I
H
Off-State
Capacitance
Marking
Code
V
DRM
(V) I
DRM
(uA) V
BO
(V) V
T
(V)
Min
(mA)
Max (mA)
Min
(mA)
Max (mA)
C
O
(pF)
TB0640H
58 5 77 3.5 50 800 150 800 200 T064H
TB0720H
65 5 88 3.5 50 800 150 800 200 T072H
TB0900H
75 5 98 3.5 50 800 150 800 200 T090H
TB1100H
90 5 130 3.5 50 800 150 800 120 T110H
TB1300H
120 5 160 3.5 50 800 150 800 120 T130H
TB1500H
140 5 180 3.5 50 800 150 800 120 T150H
TB1800H
160 5 220 3.5 50 800 150 800 120 T180H
TB2300H
190 5 265 3.5 50 800 150 800 80 T230H
TB2600H
220 5 300 3.5 50 800 150 800 80 T260H
TB3100H
275 5 350 3.5 50 800 150 800 80 T310H
TB3500H
320 5 400 3.5 50 800 150 800 80 T350H
Symbol Parameter
V
DRM
Stand-off Voltage
I
DRM
Leakage current at stand-off voltage
V
BR
Breakdown voltage
I
BR
Breakdown current
V
BO
Breakover voltage
I
BO
Breakover current
I
H
Holding current NOTE: 1
V
T
On state voltage
I
PP
Peak pulse current
C
O
Off-state capacitance NOTE: 2
Notes: 1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP
TCUDORP WEN
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