DIODES TB2600M, TB0900M, TB0720M, TB1500M, TB1300M Datasheet

NEW PRODUCT

TB0640M - TB3500M

50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Features

UNDER DEVELOPMENT

∙50A Peak Pulse Current @ 10/1000μs

∙250A Peak Pulse Current @ 8/20μs

∙58 - 320V Stand-Off Voltages

∙Oxide-Glass Passivated Junction

∙Bi-Directional Protection In a Single Device

∙High Off-State impedance and Low On-State Voltage

Mechanical Data

∙Case: SMB, Molded Plastic

∙Plastic Material: UL Flammability Classification Rating 94V-0

∙Moisture sensitivity: Level 1 per J-STD-020A

∙Terminals: Solder Plated Terminal - Solderable per MIL-STD-202, Method 208

∙Polarity: None; Bi-Directional Devices Have No Polarity Indicator

∙Weight: 0.093 grams (approx.)

∙Marking: Date Code and Marking Code (See Page 4)

∙Ordering Information: See Page 4

		A		SMB
			Dim	Min	Max
	B	C	A	4.06	4.57
			B	3.30	3.94
			C	1.96	2.21
			D	0.15	0.31
		D
			E	5.21	5.59
	G		F	0.05	0.20
			G	2.01	2.62
	H	F	H	0.76	1.52
			All Dimensions in mm
		E

Maximum Ratings @ TA = 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic		Symbol	Value	Unit
Non-Repetitive Peak Impulse Current	@10/1000us	Ipp	50	A
Non-Repetitive Peak On-State Current	@8.3ms (one-half cycle)	ITSM	30	A
Junction Temperature Range		Tj	-40 to +150	°C
Storage Temperature Range		TSTG	-55 to +150	°C
Thermal Resistance, Junction to Lead		RθJL	20	°C/W
Thermal Resistance, Junction to Ambient		RθJA	100	°C/W
Typical Positive Temperature Coefficient for Breakdown Voltage		VBR/ Tj	0.1	%/°C

Maximum Rated Surge Waveform

				(%)
	Waveform	Standard	Ipp (A)		100	Peak Value (Ipp)
				CURRENT
	2/10 us	GR-1089-CORE	300				tr = rise time to peak value
							tp = decay time to half value
	8/20 us	IEC 61000-4-5	250	PULSE
							Half Value
	10/160 us	FCC Part 68	150		50
				PEAK,
	10/700 us	ITU-T, K20/K21	100
	10/560 us	FCC Part 68	75	PP
	10/1000 us	GR-1089-CORE	50	I
					0	tp
					0 tr		TIME

DS30361 Rev. 2 - 1

1 of 4

TB0640M - TB3500M

Electrical Characteristics @ TA = 25°C unless otherwise specified

PRODUCT		Rated	Off-State		On-State		Breakover
		Repetitive	Leakage	Breakover							Holding Current		Off-State
					Voltage		Current
		Off-State	Current @	Voltage								IH	Capacitance
	Part Number				@ IT = 1A			IBO						Marking Code
		Voltage	VDRM
		VDRM (V)	IDRM (uA)	VBO (V)	VT (V)		Min		Max		Min	Max (mA)	CO (pF)
							(mA)		(mA)		(mA)
	TB0640M	58	5	77	3.5		50		800		150	800	140	T064M
NEW	TB0720M	65	5	88	3.5		50		800		150	800	140	T072M
	TB0900M	75	5	98	3.5		50		800		150	800	140	T090M
	TB1100M	90	5	130	3.5		50		800		150	800	90	T110M
	TB1300M	120	5	160	3.5		50		800		150	800	90	T130M
	TB1500M	140	5	180	3.5		50		800		150	800	90	T150M
	TB1800M	160	5	220	3.5		50		800		150	800	90	T180M
	TB2300M	190	5	265	3.5		50		800		150	800	60	T230M
	TB2600M	220	5	300	3.5		50		800		150	800	60	T260M
	TB3100M	275	5	350	3.5		50		800		150	800	60	T310M
	TB3500M	320	5	400	3.5		50		800		150	800	60	T350M
			Symbol									Parameter
			VDRM			Stand-off Voltage
			IDRM			Leakage current at stand-off voltage
			VBR			Breakdown voltage
			IBR			Breakdown current
			VBO			Breakover voltage
			IBO			Breakover current
			IH			Holding current						NOTE: 1
			VT			On state voltage
			IPP			Peak pulse current
			CO			Off-state capacitance						NOTE: 2

Notes: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time does not exceed 30ms.

2. Off-state capacitance measured at f = 1.0MHz, 1.0VRMS signal, VR = 2VDC bias.

I

IPP

IBO

IH

IBR

IDRM

VBR

V

VT

VDRM VBO

UNDER DEVELOPMENT

DS30361 Rev. 2 - 1

2 of 4

TB0640M - TB3500M