
ZXTN2040F
SOT23 40 volt NPN silicon planar medium power
transistor
Summary
V
(BR)CEO
I
c(cont)
V
ce(sat)
> 40V
= 1A
< 500mV @ 1A
Complementary type
ZXTP2041F
Description
This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.
Features
■ Low saturation voltage for reduced power dissipation
■ 1 to 2 amp high current capability
■ Pb-free
■ SOT23 package
Applications
■ Power MOSFET gate driving
■ Low loss power switching
Ordering information
Device Reel size Tape width Quantity per reel
ZXTN2040FTA 7” 8mm 3,000
ZXTN2040FTC 13” 8mm 10,000
Pin out - top view
Device marking
N40
Issue 2 - August 2005 1 www.zetex.com
© Zetex Semiconductors plc 2005

ZXTN2040F
Absolute maximum ratings
Parameter Symbol Limit Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous collector current
*
Peak base current I
Power dissipation @ T
=25°C*
A
Operating and storage temperature T
NOTES:
* For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
CBO
CEO
EBO
CM
I
C
BM
P
D
j:Tstg
40 V
40 V
5.0 V
2A
1A
1A
350 mW
-55 to +150 °C
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© Zetex Semiconductors plc 2005

ZXTN2040F
Electrical characteristics (@T
AMB
= 25°C)
Parameter Symbol Min. Max. Unit Conditions
Collector-base breakdown
V
(BR)CBO
40 V IC=100A
voltage
Collector-emitter breakdown
V
voltage
Emitter-base breakdown voltage V
Collector-emitter cut-off current I
Collector-base cut-off current I
Emitter-base cut-off current I
Static forward current transfer
ratio
Collector-emitter saturation
V
voltage
(BR)CEO
(BR)EBO
CES
CBO
EBO
h
FE
CE(sat)
40 V
=10mA
I
C
5VIE=100A
100 nA VCE=30V
100 nA VCB=30V
100 nA VEB=4V
300
300
200
35
900
0.2
0.3
0.5
I
=1mA, VCE=5V
C
IC=500mA, VCE=5V
IC=1A, VCE=5V
IC=2A, VCE=5V
V
I
=100mA, IB=1mA
V
V
C
IC=500mA, IB=50mA
IC=1A, IB=100mA
*
*
*
*
*
*
*
*
Base-emitter saturation voltage V
Base-emitter turn-on voltage V
Transition frequency f
Output capacitance C
NOTES:
* Measured under pulsed conditions. Pulse width=300S. Duty cycle ⱕ2%
Spice parameter data is available upon request for this device
BE(sat)
BE(on)
T
obo
150 IC=50mA, VCE=10V
1.1 V
1.0 V
10 pF VCB=10V, f=1MHz
=1A, IB=100mA
I
C
=1A, VCE=5V
I
C
f=100MHz
*
*
Issue 2 - August 2005 3 www.zetex.com
© Zetex Semiconductors plc 2005

Typical characteristics
ZXTN2040F
0.5
+25 ° C
0.4
0.3
-(V)
0.2
CE(sat)
V
0.1
0
1mA
1000
V
800
+100 °C
600
400
- Typical Gain
FE
200
h
0
1mA
CE
=5V
+25 °C
-55 °C
C/IB
I
=10
C/IB
I
=50
C/IB
I
=100
100mA10mA 10A1A
-Collector Current
I
C
CE(sat)
V
v I
100mA10mA
0.5
C/IB
=10
I
0.4
-55 °C
0.3
-(V)
0.2
CE(sat)
V
0.1
0
1mA
+25 °C
+100 °C
10A1A10mA 100mA
IC-Collector Current
C
1.4
C/IB
=10
I
1.2
-55 °C
+25 °C
1.0
0.8
0.6
0.4
0.2
0
1mA
+100 °C
10mA
1A
10A
- (V)
BE(sat)
V
CE(sat)
V
v I
C
100mA 1A 10A
1.0
0.8
- (V)
0.6
BE(on)
0.4
V
0.2
0
1mA
CE
V
-55 °C
+25 °C
+100 °C
-Collector Current
I
C
=5V
I
-Collector Current
C
hFEV I
100mA10mA
BE(on)
V
I
-Collector Current
C
C
10
1
1A
10A
0.1
0.01
-Collector Current (A)
C
I
0.001
0.1V 10V 100V1V
100ms
10ms
1ms
100us
DC
1s
BE(sat)
V
v I
C
VCE- Collector Emitter Voltage (V)
C
v I
Safe Operating Area
Issue 2 - August 2005 4 www.zetex.com
© Zetex Semiconductors plc 2005

Packaging details - SOT23
L
ZXTN2040F
H
N
D
G
3 leads
M
B
A
C
K
F
Package dimensions
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Max. Max.
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C - 1.10 - 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 Nom. 0.0375 Nom.
G 1.90 Nom. 0.075 Nom. - - - - -
Europe
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Germany
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Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
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Corporate Headquarters
Zetex Semiconductors plc
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Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
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© Zetex Semiconductors plc 2005