Datasheet UMA1022M-C1 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1998 May 15
File under Integrated Circuits, IC17

1998 Dec 09

INTEGRATED CIRCUITS

UMA1022M

Low cost dual frequency
synthesizer for radio telephones

1998 Dec 09 2

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

FEATURES

• Low phase noise

• Low current from 3 V supply

• Fully programmable dividers

• 3-line serial interface bus

• Input reference buffer configurable as an oscillator with

external crystal resonator

• Wide compliance voltage charge pump outputs

• Two power-down input control pins.

APPLICATIONS

• 900 MHz and 2 GHz digital radio telephones

• Portable battery-powered radio equipment.

GENERAL DESCRIPTION

The UMA1022M BICMOS device integrates prescalers,
programmable dividers, a crystal oscillator/buffer and
phase comparators to implement two phase-locked loops.
The device is designed to operate from 3 NiCd or a single
LiIon cell in pocket phones, or from an external 3 V supply.

The synthesizers operate at RF input frequencies up to

2.1 GHz and 550 MHz. All divider ratios are supplied via a
3-wire serial programming bus. The reference divider uses
a common, fully programmable part and a separate
subdivider section. In this way the comparison frequencies
are related to each other allowing optimum isolation
between charge pump pulses.

Separate power and ground pins are provided to the
analog (charge pump, prescaler) and digital (CMOS)
circuits. An independent supply for the crystal oscillator
section allows maximum frequency stability. The ground
leads should be externally short-circuited to prevent large
currents flowing across the die and thus causing damage.
V

DD

and V

DDX

must be at the same potential. V

CCA

and

V

CCB

must be equal to each other and equal to or greater

than VDD (e.g. VDD= 3 V and V

CCA

= 5.5 V for wider VCO

control voltage range).
The charge pump currents (phase detector gain) are fixed

by internal resistances and controlled by the serial
interface. Only passive loop filters are necessary;
the charge pumps function within a wide voltage
compliance range to improve the overall system
performance.

Suitable pin layout is chosen to minimize coupling and
interference between signals entering or leaving the chip.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

DD

digital supply voltage V

CCA=VCCB

≥ V

DD

2.7 3.0 5.5 V

V

CCA

, V

CCB

analog supply voltages V

CCA=VCCB

≥ V

DD

2.7 3.0 5.5 V

V

DDX

crystal reference supply voltage V

DDX=VDD

2.7 3.0 5.5 V

I

tot

all supply currents
(IDD+I

CCA+ICCB+IDDX

) in active

mode

E = 1; V

CCA=VCCB

= 3.0 V;

V

DDX=VDD

= 3.0 V
XON=0 − 14.65 − mA
XON=1 − 15.9 − mA

I

tot(pd)

total supply currents in power-down
mode

− 40 −µA

f

RF

RF input frequency 300 − 2100 MHz

f

IF

IF input frequency V

CCA=VCCB

≤ 4.0 V 50 − 550 MHz

50 − 400 MHz

f

xtal

crystal reference oscillator frequency 3 − 20 MHz

f

PCmax

maximum loop comparison frequency − 2000 − kHz

T

amb

operating ambient temperature −30 − +85 °C

1998 Dec 09 3

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

ORDERING INFORMATION

BLOCK DIAGRAM

TYPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

UMA1022M SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

Fig.1 Block diagram.

handbook, full pagewidth

20

19

1
2

18

3

MUXMUX

REFERENCE

DIVIDER

LATCH

REFERENCE
SUBDIVIDER

SERIAL

BUS

IF DIVIDER LATCH

IF PRESCALER AND DIVIDER

IF CHARGE PUMP

45 67 8

9

10

11

RF DIVIDER LATCH

RF PHASE DETECTOR

IF PHASE DETECTOR

RF PRESCALER AND DIVIDER

RF CHARGE PUMP

17 16 15

14

12

UMA1022M

MGE627

XIN
XIN

CLK

DATA

V

DDX

XGND

CP

B

V

CCB

IF

B

ON

B

DGND

CP

A

V

CCA

RF

A

AGND

V

DD

13

ON

A

XOUT

XOUT

COMMON

REFERENCE

DIVIDER

E

1998 Dec 09 4

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

PINNING

SYMBOL PIN DESCRIPTION

XIN 1 inverting crystal reference input
XGND 2 ground for crystal oscillator circuits
XOUT 3 crystal oscillator buffer output
CP

B

4 IF synthesizer charge pump output

V

CCB

5 analog supply to IF synthesizer

IF

B

6 IF VCO main divider input

ON

B

7 IF power-on input; ONB= HIGH

means IF synthesizer is active
DGND 8 digital circuits ground
E 9 programming bus enable input
DATA 10 programming bus data input
CLK 11 programming bus clock input
V

DD

12 digital circuits supply voltage

ON

A

13 RF power-on input; ONA= HIGH

means RF synthesizer is active
AGND 14 analog circuits ground
RF

A

15 RF VCO main divider input

V

CCA

16 analog supply to RF synthesizer

CP

A

17 RF synthesizer charge pump output
XOUT 18 inverting oscillator buffer output
V

DDX

19 supply voltage to crystal oscillator

circuits

XIN 20 non-inverting crystal reference input

Fig.2 Pin configuration.

handbook, halfpage

XIN

V

DD

CLK

V

DDX

XGND

CP

B

V

CCB

IF

B

ON

B

DGND

CP

A

V

CCA

RF

A

AGND
ON

A

XOUT

XOUT

XIN

DATA

E

1
2
3
4
5
6
7
8
9

10

11

12

20
19
18
17
16
15
14
13

UMA1022M

MGE626

1998 Dec 09 5

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

FUNCTIONAL DESCRIPTION
Main dividers

The main dividers are clocked at pin RF

A

by the RF
oscillator signal and at pin IFB by the IF oscillator signal.
The inputs are AC coupled through external capacitors.
Input impedances are high, dominated by parasitic
package capacitances, so matching is off-chip.
The sensitive dividers operate with signal levels from
35 to 225 mV (RMS), at frequencies up to 2.1 GHz
(RF part) and up to 550 MHz (IF part). Both include
programmable bipolar prescalers followed by CMOS
counters. The RF main divider allows programmable ratios
from 512 to 65535; the IF blocks accept values between
128 and 16383.

Crystal oscillator

A fully differential low-noise amplifier/buffer is integrated
providing outputs to drive other circuits, and to build a
crystal oscillator; only needed are an external resonance
circuit and tuning elements (temperature compensation).
A bus controlled power-down mode disables the low-noise
amplifier to reduce current if not needed.

The normal differential input pins drive a clock buffer to
provide edges to the programmable reference divider at
frequencies up to 20 MHz. The inputs are AC coupled
through external capacitors, and operate with signals
down to 35 mV (RMS) and up to 0.5 V (RMS).

Various crystal oscillator structures can be built using the
amplifier. By coupling one output back to the appropriate
input through the resonator, and decoupling the other input
to ground, the second output becomes available to deliver
the reference frequency to other circuits.

Reference dividers

A first common divider circuit produces an output
frequency for RF or IF synthesizer phase comparison,
depending on the P/A bit. It drives a second independent
divider, which delivers the reference edge to the IF or RF
synthesizer phase comparator. When P/A is logic 1, the
output of the subdivider is connected to the RF phase
comparator, whereas the output of the common divider is
connected to the IF phase detector.

The phase comparators run at related frequencies with a
controlled phase difference to avoid interference when
in-lock. The common 10-bit section permits divide ratios
from 8 to 1023; the second subdivider allows phase
comparison frequency ratios between 1 and 16. Table 2
indicates how to program the corresponding bits to get the
wanted ratio.

Phase comparators

The phase detectors are driven by the output edges
selected by the main and reference dividers. Each
generates lead and lag signals to control the appropriate
charge pump. The pumps output current pulses appear at
pins CP

A

(RF synthesizer) and CPB (IF synthesizer).
The current pulse duration is at least equal to the
difference in time of arrival of the edges from the two
dividers. If the main divider edge arrives first, CPA or CP

B

sink current. If the reference divider edge arrives first, CP

A

or CPB source current. For correct PLL operation the
VCOs need to have a positive frequency/voltage control
slope.

The currents at CPA and CPB are programmed via the
serial bus as multiples of an internally-set reference
current. The passage into power-down mode is
synchronized with respect to the phase detector to prevent
output current pulses being interrupted. Additional circuitry
is included to ensure that the gain of the phase
comparators remains linear even for small phase errors.

Serial programming bus

A simple 3-line unidirectional serial bus is used to program
the circuit. The 3 lines are DATA, clock (CLK) and enable
(

E). The data sent to the device is loaded in bursts framed
byE. Programming clock edges and their appropriate data
bits are ignored untilE goes active LOW. The programmed
information is loaded into the addressed latch when E
returns HIGH. During normal operation, E should be kept
HIGH. Only the last 19 bits serially clocked into the device
are retained within the programming register.

Additional leading bits are ignored, and no check is made
on the number of clock pulses. The NMOS-rich design
uses virtually no current when the bus is inactive;
power-up is initiated when enable is taken LOW, and
power-down occurs a short time after enable returns
HIGH. Bus activity is allowed when either synthesizer is
active or in power-down (ONA and ONB inputs LOW)
mode. Fully static CMOS registers retain programmed
data whatever the power-down state, as long as the supply
voltage is present.

1998 Dec 09 6

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

Data format

The leading bits (dt15 to dt0) make up the data field, while
the trailing three bits (ad2 to ad0) comprise an address
field. The UMA1022M uses 4 of the 8 available addresses.
The data format is shown in Table 1. The first bit entered
is dt15, the last bit is ad0. For the divider ratios, the first
bits entered (P0 and R0) are the Least Significant Bits
(LSB). This is different from previous Philips

synthesizers.

The trailing address bits are decoded on the rising edge of
E. This produces an internal load pulse to store the data in
the addressed latch. To avoid erroneous divider ratios, the
load pulse is not allowed during data reads by the
frequency dividers. This condition is guaranteed by
respecting a minimum E pulse width after data
transfer.The test register bits should not normally be
programmed active (HIGH); normal operation requires
them set LOW. When the supply voltage is established an
internal power-up initialization pulse is generated to
preconfigure the circuit state. Production testing does not
verify that all bits are preconfigured correctly.

Power-down mode

The RF and IF synthesizers are on when respectively the
input signal ON

A

and ONB are HIGH. When turned on, the
dividers and phase detector are synchronized to avoid
random phase errors. When turnedoff, the phase detector
is synchronized to avoid interrupting charge pump pulses.
The UMA1022M has a very low current consumption in the
power-down mode.

Table 1 Bit allocation; note 1

Notes

1. X = don’t care.

2. The test bits (at address 011) should not be programmed with any other value except all zeros for normal operation.

3. Bit XON = power-on of crystal oscillator low-noise amplifier; logic 1 turns on circuit block.

4. Bit P/A = 1 selects the output of the reference subdivider to the RF synthesizer and the output of the common
reference divider to the IF synthesizer.

5. The coefficient REFDIV2 (4 bits) selects the phase comparison ratio (1 to 16) between IF and RF synthesizers
(see Table 2).

6. P0 is the LSB of the RF main divider coefficient; R0 is the LSB of the reference divider coefficient; A0 is the LSB of
the IF main divider.

FIRST IN REGISTER BIT ALLOCATION LAST IN

DATA FIELD ADDRESS

dt15 dt14 dt13 dt12 dt11 dt10 dt9 dt8 dt7 dt6 dt5 dt4 dt3 dt2 dt1 dt0 ad2 ad1 ad0

Test bits

(2)

CPI S/D XON

(3)

XXXXP/A

(4)

REFDIV2

(5)

011

P0

(6)

RF synthesizer main divider coefficient P15 0 0 0

XXXXXXR0

(6)

reference divider coefficient R9 0 0 1

XXA0

(6)

IF synthesizer main divider coefficient A13 0 1 0

1998 Dec 09 7

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

Table 2 Programming the coefficient REFDIV2 for reference subdivider

Table 3 RF and IF synthesizer nominal charge pump currents (gain)

dt3 (LSB) dt2 dt1 dt0 (MSB) REFDIV2

0000 1
1000 2
0100 3
1100 4
0010 5
1010 6
0110 7
1110 8
0001 9
1001 10
0101 11
1101 12
0011 13
1011 14
0111 15
1111 16

CPI SINGLE/DOUBLE I

CPA

(µA) I

CPB

(µA)

0 0 470 470
0 1 840 840
1 0 1410 470
1 1 2480 840

1998 Dec 09 8

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

HANDLING

All pins withstand class 1 ESD test in accordance with

“EIA/JESD22-A114-A”

electrostatic discharge (ESD) sensitivity

testing Human Body Model (HBM).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MIN. MAX. UNIT

V

DD

, V

DDX

digital and crystal reference supply voltages −0.3 +5.5 V

V

CCA

, V

CCB

analog charge pump supply voltages −0.3 +5.5 V

V

C

− V

D

difference in voltage between analog and digital supplies −0.3 +5.5 V

V

n

voltage

at pins 7, 9, 10, 11 and 13 −0.3 V

DD

+ 0.3 V

at pins 1, 3, and 20 −0.3 V

DDX

+ 0.3 V

at pins 4 and 6 −0.3 V

CCB

+ 0.3 V

at pins 15 and 17 −0.3 V

CCA

+ 0.3 V

∆V

GND

difference in voltage between any of DGND, AGND and
XGND (these pins should be connected together)

−0.3 +0.3 V

P

tot

total power dissipation − 120 mW

T

stg

IC storage temperature −55 +125 °C

T

amb

operating ambient temperature −30 +85 °C

T

j(max)

maximum junction temperature − 150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 120 K/W

1998 Dec 09 9

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

CHARACTERISTICS

All values refer to the typical measurement circuit; T

amb

=25°C; VDD=V

DDX

= 2.7 to 5.5 V; V

CCA=VCCB

= 2.7 to 5.5 V;

V

CCA=VCCB

≥ VDD; unless otherwise specified. Characteristics for which only a typical value is given are not tested.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies; pins 5, 12, 16 and 19

V

DD

, V

DDX

digital and crystal reference supply
voltages

VDD=V

DDX

;

V

CCA

= V

CCB

≥ V

DD

2.7 3.0 5.5 V

V

CCA

, V

CCB

charge pump supply voltages V

CCA

= V

CCB

≥ V

DD

2.7 3.0 5.5 V

I

DD

synthesizer digital supply current VDD=3V;E=1;

ONA and ONB=1

− 1.5 2.1 mA

I

DDX1

reference block supply current V

DDX

= 3 V; XON = 0 − 0.25 0.4 mA

I

DDX2

crystal oscillator and buffer currents V

DDX

= 3 V; XON = 1 − 1.5 1.8 mA

I

CCA

RF synthesizer charge pump and
prescaler supply currents

V

CCA

=3V;

ONA and ONB=1

− 8.1 9.8 mA

I

CCB

IF synthesizer charge pump and
prescaler supply currents

V

CCB

=3V;

ONA and ONB=1

− 4.8 5.7 mA

I

tot(pd)

total supply currents
(I

CCA(pd)+IDD(pd)+ICCB(pd)+IDDX(pd)

)

in power-down mode

E=VDD; CLK and
DATA = 0 V or VDD;
ONA and ONB=0;
XON = 0

− 40 80 µA

RF main divider input; pin 15

f

RF

RF input frequency 300 − 2100 MHz

V

RF(rms)

AC-coupled input signal level (RMS
value)

fRF= 600 to 2100 MHz 35 − 225 mV
f

RF

= 300 to 600 MHz 70 − 225 mV

R

m

main divider ratio 512 − 65535

Z

i

input impedance (real part) fRF= 2 GHz − 60 −Ω

C

i

pin input capacitance − 2 − pF

IF main divider input; pin 6

f

IF

IF input frequency V

CCA

= V

CCB

≤ 4.0 V 50 − 550 MHz

50 − 400 MHz

V

IF(rms)

AC-coupled input signal level
(RMS value)

fIF= 150 to 550 MHz 35 − 225 mV
f

IF

= 100 to 150 MHz 50 − 225 mV

f

IF

= 50 to 100 MHz 100 − 225 mV

R

m

main divider ratio 128 − 16383

Z

i

input impedance (real part) fIF= 400 MHz − 60 −Ω

C

i

pin input capacitance − 2 − pF

1998 Dec 09 10

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

Synthesizers reference divider input; pins 1 and 20

f

xtal

crystal reference oscillator frequency 3 − 20 MHz

V

xtal(rms)

sinusoidal input signal level between
pins 1 and 20 (RMS value)

single-ended;

f

xtal

= 6 to 20 MHz 35 − 250 mV

f

xtal

= 3 to 6 MHz 70 − 250 mV

differential;

f

xtal

= 6 to 20 MHz 70 − 500 mV

f

xtal

= 3 to 6 MHz 140 − 500 mV

R

refc

common reference division ratio 8 − 1023

R

refa

reference subdivider division ratio 1 − 16

Z

i

input impedance (real part) per pin f

xtal

= 10 MHz; XON = 1 − 4 − kΩ

C

i

typical pin input capacitance − 2 − pF

NF small signal differential input noise

figure

matched to a 4 kΩ
source; XON = 1

− 4.5 − dB

Phase detectors

f

PCmax

maximum loop comparison
frequency

− 2000 − kHz

Charge pump outputs; pins 4 and 17

V

CPA

output voltage compliance range;
RF synthesizer

0.4 − V

CCA

− 0.4 V

V

CPB

output voltage compliance range;
IF synthesizer

0.4 − V

CCB

− 0.4 V

I

ocp(err)

charge pump output current error note 1 −25 − +25 %

I

match

sink-to-source current matching −±5− %

I

Lcp

charge pump off leakage current V

CPA

=1⁄2V

CCA

;

V

CPB

=1⁄2V

CCB

−5 ±1+5 nA

Phase noise

N

900

RF synthesizer’s contribution to
close-in phase noise of 0.9 GHz VCO
signal inside closed-loop bandwidth

f

xtal

= 13 MHz;

V

xtal

= 0 dBm;

fPC= 200 kHz

−−86 −

dBc/Hz

N

1800

RF synthesizer’s contribution to
close-in phase noise of 1.8 GHz VCO
signal inside closed-loop bandwidth

f

xtal

= 13 MHz;

V

xtal

= 0 dBm;

fPC= 200 kHz

−−80 −

dBc/Hz

N

180

IF synthesizer’s contribution
180 MHz VCO signal inside
closed-loop bandwidth

f

xtal

= 13 MHz;

V

xtal

= 0 dBm;

fPC= 1000 kHz

−−104 −

dBc/Hz

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1998 Dec 09 11

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

Notes

1. Conditions: 0.4 < V

CPA

<(V

CCA

− 0.4) and 0.4 < V

CPB

<(V

CCB

− 0.4).

2. This value is directly dependent on the external resonator quality factor. Only guaranteed for the application circuit

which is given in Fig.5.

3. Only guaranteed on the Philips application board.

Interface logic input signal levels; pins 7, 9, 10, 11 and 13

V

IH

HIGH-level input voltage 0.7V

DD

− VDD+ 0.3 V

V

IL

LOW-level input voltage −0.3 − 0.3V

DD

V

I

bias

input bias current logic 1 or logic 0 −5 − +5 µA

C

i

input capacitance − 2 − pF

Low noise crystal oscillator amplifier output signals; pins 3 and 18

Z

o

differential output impedance
(real part)

f

xtal

=10MHz − 2 − kΩ

V

XOUT

,

V

XOUTN

DC output voltage − 2.29 − V

G

v(diff)

small signal differential voltage gain XON = 1; f

xtal

= 10 MHz 18 20 22 dB

V

o(p-p)

limiting differential output voltage
swing (peak-to-peak value)

XON = 1 − 2 − V

∆f/f(V

DDX

) frequency stability as a function of

supply voltage change (referenced to
initial frequency)

V

DDX

=3V±5%; note 2 −±0.25 − ppm

System specification

FTRF

IF

RF frequency and close harmonics
feedthrough to IF frequency

note 3 − 70 − dBc

FTIF

RF

IF frequency and close harmonics
feedthrough to RF frequency

note 3 − 50 − dBc

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1998 Dec 09 12

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

SERIAL BUS TIMING CHARACTERISTICS

V

DD=VDDX=VCCA=VCCB

=3V; T

amb

=25°C; unless otherwise specified.

Note

1. The minimum pulse width (t

W(min)

) can be smaller than 1.5 µs when the following conditions are fulfilled:

a) Main divider input frequency

b) Reference divider input frequency

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

Serial programming clock; CLK

t

r

input rise time − 10 40 ns

t

f

input fall time − 10 40 ns

T

cy

clock period 100 −−ns

Enable programming;

E

t

START

delay to rising clock edge 100 −−ns

t

END

delay from last falling clock edge 20 −−ns

t

W(min)

minimum inactive pulse width 1500

(1)

−−ns

t

SU;E

enable set-up time to next clock edge 20 −−ns

Register serial input data; DATA

t

SU;DAT

input data to clock set-up time 20 −−ns

t

HD;DAT

input data to clock hold time 20 −−ns

f

RF

383

t

W(min)

----------------

>

f

xtal

3

t

W(min)

----------------

>

Fig.3 Serial bus timing diagram.

handbook, full pagewidth

MGE628

LSB MSB ADDRESS

t

START

t

SU;DAT

t

HD;DAT

T

cy

t

r

t

f

t

W(min)

t

ENDtSU;E

CLK

DATA

E

1998 Dec 09 13

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

AC TIMING CHARACTERISTICS

V

DD=VDDX=VCCA=VCCB

=3V; T

amb

=25°C; unless otherwise specified.

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

t

PUP

delay for initial power-up − 400 −µs

t

PDWN

time for power-down from E = 0 (ONA/ONB=0) − 100 −µs

t

START

time to turn-on either the RF or IF synthesizer from
ONA/ON

B

− 50 −µs

t

END

time to turn-off either the RF or IF synthesizer from
ONA/ON

B

− 70 −µs

t

SEND

waiting time before sending data on the serial bus 15000 −−µs

Fig.4 AC timing characteristics.

handbook, full pagewidth

MGE631

VDD = V

CCA

= V

CCB

I

tot

ONA = '1'

or

ONB = '1'

E

t

SEND

t

PUP

t

START

t

END

t

PDWN

1998 Dec 09 14

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

APPLICATION INFORMATION

Fig.5 Typical test and application diagram.

(1) Loop filter values depend on the application.

handbook, full pagewidth

MGE630

18 Ω

18 Ω

18 Ω

12 Ω

56 Ω

100 nF

4.7 µF

(1)

(1)

(1)

IF

VCO

12 Ω

100 nF

18 Ω

12 Ω

18 Ω

18 Ω

56 Ω

100 nF

4.7 µF

(1)

(1)

(1)

RF

VCO

12 Ω

100 nF

56 pF

15 pF

56 pF

analog

supply

crystal

clock

analog
supply

13 MHz

15 pF

15 pF

100 nF

12 Ω

1 kΩ

1 kΩ1 kΩ1 kΩ

1 kΩ

12 Ω

100 nF

digital

supply

VCO supply

VCO supply

digital

supply

1

XIN

2

XGND

3

XOUT

4

CP

B

5

V

CCB

6

IF

B

7

ON

B

8

DGND

9

E

10

DATA

11

CLK

12

V

DD

13

ON

A

14

AGND

15

RF

A

16

V

CCA

17

CP

A

18

XOUT

19

V

DDX

20

XIN

3-wire bus

analog supply

UMA1022M

IF RF

1998 Dec 09 15

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

Fig.6 Application block diagram.

handbook, full pagewidth

MGE629

SPLITTER

VOLTAGE

CONTROLLED

OSCILLATOR

power

amplifier

low noise

amplifier

duplex
filter

transmit

data

transmit

mixer

to demodulation

first

mixer

second

mixer

OSCILLATOR

RF

MAIN DIVIDER

IF

MAIN DIVIDER

REFERENCE

DIVIDER

RF

PHASE

COMPARATOR

AND

CHARGE PUMP

IF

PHASE

COMPARATOR

AND

CHARGE PUMP

LOW-PASS

FILTER

SPLITTER

VOLTAGE

CONTROLLED

OSCILLATOR

LOW-PASS

FILTER

band-pass

filter

IF

filter

3-wire

bus

crystal

clock

RF PLL

IF PLL

UMA1022M

1998 Dec 09 16

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

PACKAGE OUTLINE

UNIT A

1

A2A

3

b

p

cD

(1)E(1)

(1)

eHELLpQZywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.1501.4

1.2

0.32

0.20

0.20

0.13

6.6

6.4

4.5

4.3

0.65 1.0 0.2

6.6

6.2

0.65

0.45

0.48

0.18

10

0

o

o

0.13 0.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

0.75

0.45

SOT266-1

90-04-05
95-02-25

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

X

(A )

3

A

y

0.25

110

20

11

pin 1 index

0 2.5 5 mm

scale

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

SOT266-1

A

max.

1.5

1998 Dec 09 17

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

SOLDERING
Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1998 Dec 09 18

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

Suitability of surface mount IC packages for wave and reflow soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

PACKAGE

SOLDERING METHOD

WAVE REFLOW

(1)

BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable

(2)

suitable

PLCC

(3)

, SO, SOJ suitable suitable

LQFP, QFP, TQFP not recommended

(3)(4)

suitable

SSOP, TSSOP, VSO not recommended

(5)

suitable

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1998 Dec 09 19

Philips Semiconductors Product specification

Low cost dual frequency synthesizer for
radio telephones

UMA1022M

NOTES

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1998 SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. [phone], Fax. [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone]

Printed in The Netherlands 435102/750/04/pp20 Date of release: 1998 Dec 09 Document order number: 9397 750 04825