Datasheet TEA5570 Specification

INTEGRATED CIRCUITS

DATA SH EET

TEA5570

RF/IF circuit for AM/FM radio

Product specification
File under Integrated Circuits, IC01

September 1987

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

GENERAL DESCRIPTION

The TEA5570 is a monolithic integrated radio circuit for use in portable receivers and clock radios. The IC is also
applicable to mains-fed AM and AM/FM receivers and car radio-receivers. Apart from the AM/FM switch function the IC
incorporates for AM a double balanced mixer, 'one-pin' oscillator, i.f. amplifier with a.g.c. and detector, and a level
detector for tuning indication. The FM circuitry comprises i.f. stages with a symmetrical limiter for a ratio detector. A level
detector for mono/stereo switch information and/or indication complete the FM part.

Features

• Simple d.c. switching for AM to FM by only one d.c. contact to ground (no switch contacts in the i.f. channel, a.f. or
level detector outputs)

• AM and FM gain control

• Low current consumption (I

• Low voltage operation (VP = 2,7 to 9 V)

• Ability to handle large AM signals; good i.f. suppression

• Applicable for inductive, capacitive and diode tuning

• Double smoothing of a.g.c. line

• Short-wave range up to 30 MHz

• Lumped or distributed i.f. selectivity with coil and/or ceramic filters

• AM and a.g.c. output voltage control

• Distribution of PCB wiring provides good frequency stability

• Economic design for 'AM only' receivers.

= 6 mA)

tot

QUICK REFERENCE DATA (at T

amb

= 25 °C)

Supply voltage V
Supply current I
AM performance (pin 2) for m = 0,3
Sensitivity

at V

= 10 mV V

o

at S/N = 26 dB V
A.F. output voltage at V
Total harmonic distortion at V

= 1 mV V

i

= 1 mV THD typ. 0,5 %

i

FM performance (pin 1) for ∆f = ± 22,5 kHz

limiting sensitivity, −3 dB V
Signal-to-noise ratio for V
A.F. output voltage at V
Total harmonic distortion at V
AM suppression at V

= 1 mV S/N typ. 65 dB

i

= 1 mV V

i

= 1 mV THD typ. 0,3 %

i

= 10 mV AMS typ. 50 dB

i

PACKAGE OUTLINE

16-lead DIL; plastic (SOT38); SOT38-1; 1996 July 25.

= V

P

7-16

7

i
i
o

i

o

typ. 5,4 V
typ. 6,2 mA

typ. 1,7 µV
typ. 16 µV
typ. 100 mV

typ. 110 µV

typ. 100 mV

September 1987 2

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September 1987 3

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

Fig.1 Block diagram.

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage (pin 7) V

Voltage at pins 4, 5, 9 and 10 to pin 16 (ground) V
Voltage range at pin 8 V
Current into pin 5 I
Total power dissipation P
Storage temperature range T
Operating ambient temperature range T

5

= V

P
n-16
8-16

tot
stg
amb

7-16

max. 12 V
max. 12 V

VP± 0,5 V
max. 3 mA
see Fig.2

−55 to + 150 °C

−30 to + 85 °C

Fig.2 Power derating curve.

September 1987 4

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

D.C. CHARACTERISTICS

V

= 6 V; T

P

Supply (pin 7)
Supply voltage (note 1) V

Voltages

at pin 1 (FM) V
at pin 1; −I
at pins 2 and 3 (AM) V
at pin 6 V
at pin 11 V
at pin 13 V
at pin 14 V

Currents

Supply current I
Current supplied from pin 1 (FM) −I
Current supplied from pin 12 −I
Current supplied from pin 15 −I
Current into pin 4 (AM) I
Current into pin 5 (FM) (note 4) I
Current into pin 8 (AM) I
Current into pins 9, 10 (FM) I
Current into pin 14 I

Power consumption

= 25 °C; measured in Fig.10; unless otherwise specified

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

P

1-16

= 50 µA (FM) V

1

1-16
2,3-16
6-16
11-16
13-16
14-16

7

1
12

15
4
5
8
9,10
14

P − 40 − mW

= V

7-16

2,4 5,4 9,0 V

− 1,42 − V

− 1,28 − V

− 1,42 − V

− 0,7 − V

− 1,4 − V

− 0,7 − V

− 4,3 − V

4,2 6,2 8,2 mA

−−50 µA

−−20 µA

− 30 −µA

− 0,6 − mA

− 0,35 − mA

− 0,3 − mA

− 0,65 − mA

− 0,4 − mA

September 1987 5

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

A.C. CHARACTERISTICS
AM performance

= 6 V; T

V

P

|Z

| = v6/I4 = 2,7 kΩ; measured in Fig.10; unless otherwise specified

tr

R.F. sensitivity (pin 2)

at V

o

at S + N/N = 6 dB V
at S + N/N = 26 dB V

at S + N/N = 50 dB V
Signal handling (THD ≤ 10% at m = 0,8) V
A.F. output voltage at V
Total harmonic distortion

at Vi = 100 µV to 100 mV (m = 0,3) THD − 0,5 − %

at V

i

at V

i

I.F. suppression at V
Oscillator voltage (pin 8; note 3)

at f

osc

Indicator current (pin 12) at V

= 25 °C; r.f. condition: fi = 1 MHz, m = 0,3, fm = 1 kHz; transfer impedance of the i.f. filter

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

= 30 mV V

= 1 mV V

i

i
i
i
i
i
o

3,5 5,0 7,0 µV

− 1,3 µV

− 16 20 µV

− 1 − mV

200 −−mV
80 100 125 mV

= 2 mV (m = 0,8) THD − 1,0 2,5 %
= 200 mV (m = 0,8) THD − 4,0 10 %

= 30 mV (note 2) α 26 35 − dB

o

= 1455 kHz V

= 1 mV I

i

8-16

12

120 160 200 mV

− 200 230 µV

FM performance

V

= 6 V; T

P

|Z

| = v6/i5= 275 Ω; measured in Fig.10; unless otherwise specified

tr

= 25 °C; i.f. condition: fi= 10,7 MHz, ∆f = ± 22,5 kHz, fm= 1 kHz; transfer impedance of the i.f. filter

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

I.F. part

I.F. sensitivity (adjustable; note 4)
Input voltage

at −3 dB before limiting V

at S + N/N = 26 dB V

at S + N/N = 65 dB V
A.F. output voltage at V
Total harmonic distortion at V

= 1 mV V

i

= 1 mV THD − 0,3 − %

i

i
i
i
o

90 110 130 µV

− 6 −µV

− 1 − mV

80 100 125 mV

AM suppression (note 5) AMS − 50 − dB

September 1987 6

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Indicator/level detector (pin 12)

Indicator current I

12

D.C. output voltage

at V

= 300 µVV

i

at V

= 2 mV V

i

12-16
12-16

AM to FM switch

Switching current at V

< 1 V −I

3-16

3

Notes to the characteristics

1. Oscillator operates at V

2. I.F. suppression is defined as the ratio α = 20 log where: V
input voltage at f = 1 MHz.

3. Oscillator voltage at pin 8 can be preset by R

7-16

> 2,25 V.

V

i1

------- ­V

i2

(see Fig.10).

osc

i1

4. Maximum current into pin 5 can be adjusted by R1 (see Fig.10); I5= − I3when V

5. AM suppression is measured with f

= 1 kHz, m = 0,3 for AM; fm= 400 Hz, ∆f = ± 22,5 kHz for FM.

m

− 250 325 µA

− 0,25 − V

− 1,0 − V

−−400 µA

is the input voltage at f = 455 kHz and Vi2is the

V

316–

--------------- ­R1

= 800 mv; I3= 400 µA.

3-16

Facility adaptation

Facility adaptation is achieved as follows (see Fig.10):

FACILITY COMPONENT

FM sensitivity

R1 fixes the current at pin 5 (I

(gain adjustable ± 10 dB; see note 4)
AM sensitivity R11 and coil tapping
AM oscillator biasing R

osc

AM output voltage R7, R11
AM a.g.c. setting R7

V

316–

= − 400 µA)

--------------- -

5

R1

September 1987 7

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

Typical graphs

reference level 0 dB = 100 mV

(1) A.G.C. range (figure of merit, FOM).

Fig.3 Signal, noise and distortion as a function of input voltage (Vi). Measured at fi = 1 MHz in test circuit Fig.10.

 sensitivity (Vi) at Vo = 30 mV; m = 0,3.

−− − output voltage (Vo) at Vi = 2 mV; m = 0,3.

Fig.4 Sensitivity (Vi), output voltage (Vo) as a function of temperature behaviour (T

in test circuit Fig.10.

September 1987 8

). Measured at fi = 1 MHz

amb

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

 sensitivity (Vi) at Vo = 30 V; m = 0,3: 6,0 V application.

− - − - − sensitivity (Vi) at Vo = 30 mV; m = 0,3: 4,5 V application.

−−−−− output voltage (Vo) at Vi = 0,2 mV; m = 0,3.

Fig.5 Sensitivity (Vi) and output voltage (Vo) as a function of supply voltage (VP). Measured at fi = 1 MHz in test

circuit Fig.10, for application VP = 6 V. Also shown is the sensitivity for VP = 4,5 V application (Fig.16).

Fig.6 Signal, noise and distortion as a function of input voltage (Vi). Measured at fi = 10,7 MHz

in test circuit Fig.10.

September 1987 9

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

 sensitivity at −3 dB limiting.

−−− output voltage (Vo) at Vi = 1 mV; ∆f = ± 22 kHz.

Fig.7 Sensitivity (Vi), output voltage (Vo) as a function of temperature behaviour (T

Measured at fi = 10,7 MHz in test circuit Fig.10.

amb

).

 sensitivity at −3 dB limiting: VP = 6,0 V application.

− - − - − - sensitivity at −3 dB limiting: VP = 4,5 V application.

−−−− output voltage (Vo) at Vi = 1 mV; ∆f = ± 22,5 kHz.

Fig.8 Sensitivity (Vi) and output voltage (Vo) as a function of supply voltage (VP).

Measured at fi = 10,7 MHz in test circuit Fig.10.

September 1987 10

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

Fig.9 Indicator output current (I12) and d.c. output voltage (V

of input voltage (Vi). Measured in Fig.10; VP = 6 V; R

): AM fi = 1 MHz; FM fi = 10,7 MHz as a function

12-16

= 5 kΩ.

12-16

September 1987 11

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September 1987 12

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

Fig.10 Test circuit.

Coil data
The transfer impedance of the i.f. filter is:
AM: |Ztr| = v6/i4 = 2,7 kΩ (SFZ 455A).
FM: |Ztr| = v6/i5 = 275 Ω (SFE 10,7 MS).
See also Figs 11, 12, 13 and 14.

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

COIL DATA
AM i.f. coils (Fig.10)

N1 = 73
N2 = 73
N3 = 9
C16 = 180 pF (internal)
Wire = 0,07 mm dia.

Fig.11 I.F. bandpass filter (L1). TOKO sample no. 7 MC-7 P.

N1 = 90
N2 = 7
Wire = 0,07 mm dia.

Fig.12 Oscillator coil (L2). TOKO sample no. 7 BR-7 P.

September 1987 13

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

FM i.f. coils (Fig.10)

N1 = 5
N2 = 5
N3 = 4
C19 = 82 pF (internal)
Wire = 0,1 mm dia.

Fig.13 Primary ratio detector coil (L3). TOKO sample no. 119 AN-7 P.

N1 = 2
N2 = 6
N3 = 6
C20 = 68 pF (internal)
Wire = 0,1 mm dia.

Fig.14 Secondary ratio detector coil (L4). TOKO sample no. 119 AN-7 P.

September 1987 14

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September 1987 15

APPLICATION INFORMATION

Figs 15 and 17 show the circuit diagrams for the application of 6 V AM MW/LW and 4,5 V AM/FM channels respectively, using the TEA5570. Fig.16
shows the circuitry of the TEA5570.

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

Coil data

L3 N1 = 73 L4 N1 = 146 L5 N1 = 90

N2 = 73 N2 = 9 N2 = 6
N3 = 9 C = 180 pF
C = 180 pF

Fig.15 Typical application circuit for 6 V AM MW/LW reception using the TEA5570.

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September 1987 16

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

Fig.16 TEA5570 circuit diagram.

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September 1987 17

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

Coil data

L2 N1 = 3 L3 N1 = 33 L4 N1 = 90 L5 N1 = 33 L6 N1 = 50

N2 = 8 N2 = 113 N2 = 6 N2 = 113 N2 = 50
N3 = 1 N3 = 9 N3 = 9 N3 = 4,5
C = 82 pF C = 180 pF N4 = 6,5

C = 82 pF

Fig.17 Typical application circuit for 4,5 V AM/FM reception using the TEA5570 with coils and single-tuned ratio

detector (with silicon diodes).

DETAILED APPLICATION INFORMATION WILL BE SUPPLIED ON REQUEST.

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

PACKAGE OUTLINE

DIP16: plastic dual in-line package; 16 leads (300 mil); long body

D

seating plane

L

Z

16

pin 1 index

e

b

b

1

9

A

w M

SOT38-1

M

E

A

2

A

1

c

(e )

1

M

H

E

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

A

max.

4.7 0.51 3.7

OUTLINE
VERSION

SOT38-1

min.

A

1 2

max.

0.15

IEC JEDEC EIAJ

050G09 MO-001AE

b

1.40

1.14

0.055

0.045

b

0.53

0.38

0.021

0.015

1

cEe M

0.32

0.23

0.013

0.009

REFERENCES

(1) (1)

D

21.8

21.4

0.86

0.84

September 1987 18

8

6.48

6.20

0.26

0.24

e

0.30

1

0.15

0.13

M

L

3.9

3.4

E

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

H

9.5

0.2542.54 7.62

8.3

0.37

0.010.100.0200.19

0.33

ISSUE DATE

w

92-10-02
95-01-19

Z

max.

2.2

0.087

(1)

Philips Semiconductors Product specification

RF/IF circuit for AM/FM radio TEA5570

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Soldering by dipping or by wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

DEFINITIONS

(order code 9398 652 90011).

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

stg max

). If the

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

September 1987 19