Page 1
STB80NE03L-06
N - CHANNEL 30V - 0.005Ω - 80A - D2PAK
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB80NE03L-06 30 V < 0.006 Ω 80 A
■ TYPICALR
■ EXCEPTIONALdv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE 100
■ APPLICATIONORIENTED
DS(on)
=0.005 Ω
o
C
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSIONCONTACT
SALESOFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a
remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG,LAMPDRIVERS, Etc. )
3
1
D2PAK
TO-263
(suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/ dt Peak Diode Recover y volt age slope 7 V/ns
T
(•) Pulsewidth limitedby safe operating area (1)ISD≤ 80 A,di/dt ≤ 300A/µs, VDD≤ V
July 1998
Drain-source Voltage (VGS=0) 30 V
DS
Drain- gate Voltage ( RGS=20kΩ)
DGR
Gat e- source Volt age ± 22 V
GS
I
Drain Current (cont inuous) at Tc=25oC80A
D
I
Drain Current (cont inuous) at Tc=100oC60A
D
30 V
(•) Drain Current (pulsed) 320 A
Tot al Dissipat i on at Tc=25oC150W
tot
Derat in g Factor 1 W/
Sto rage T em pe r ature -65 to 175
stg
T
Max. Operat in g Junct ion Te m peratu re 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
Page 2
STB80NE03L-06
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lue Uni t
I
AR
E
Ther mal Res ist ance J unctio n-c a s e Max
Ther mal Res ist ance J unctio n-ambient Max
Ther mal Res ist ance C ase-sink Ty p
Maximum Lead Te mpera t u re For S old eri ng Pur p os e
l
Avalanche Curre nt , Repet it i v e or Not -Repet it ive
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=15V)
j
max, δ <1%)
j
1
62.5
0.5
300
80 A
600 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
30 V
Breakdown Voltage
I
DSS
I
GSS
Zer o Gate Vo ltage
Drain Cur rent (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 15 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
11.72.5V
Voltage
R
DS(on)
I
D(on)
Stati c Drain-so urce On
Resistance
VGS=10V ID=40A
=5V ID=40A
V
GS
On State Drain Cur rent VDS>I
D(on)xRDS(on)max
0.005 0. 006
0.008ΩΩ
80 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capacit ance
iss
Out put Capa c itanc e
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=40 A 30 50 S
VDS=25V f=1MHz VGS= 0 6500
1500
500
8700
2000
700
µA
µA
pF
pF
pF
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STB80NE03L-06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=15V ID=40A
=4.7 Ω VGS=5V
R
G
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Charge
gs
Gate-Drain Charge
gd
VDD=24V ID=80A VGS=5V 95
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
Of f - voltag e Rise Time
t
Fall Time
f
Cross-ov er Tim e
c
VDD=24V ID=80A
=4.7 Ω VGS=5V
R
G
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward O n Voltage ISD=80A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
= 80 A di/dt = 100 A/µs
I
SD
=15V Tj=150oC
V
DD
(see test circuit, figure 5)
Charge
Reverse Recovery
Current
40
26055350
130 nC
30
44
70
165
250
95
220
340
80
320
75
0.14
4
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Areafor ThermalImpedance
3/8
Page 4
STB80NE03L-06
OutputCharacteristics
Transconductance
TransferCharacteristics
StaticDrain-sourceOn Resistance
GateCharge vs Gate-sourceVoltage
4/8
CapacitanceVariations
Page 5
STB80NE03L-06
Normalized GateThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
Normalized On Resistancevs Temperature
5/8
Page 6
STB80NE03L-06
Fig. 1: UnclampedInductiveLoad Test Circuit
Fig. 3: Switching Times Test CircuitsFor
ResistiveLoad
Fig. 2: UnclampedInductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode RecoveryTimes
6/8
Page 7
TO-263 (D2PAK) MECHANICAL DATA
STB80NE03L-06
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm inch
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
7/8
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STB80NE03L-06
Information furnished is believed to be accurate andreliable. However, STMicroelectronics assumes no responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication orotherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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8/8
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