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N - CHANNEL 100V - 0.07Ω - 24A TO-263
LOW GATE CHARGE STripFET POWER MOSFET
TYPE V
DSS
ST B24NF10 100 V < 0.0 77 Ω 24 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ SURFACE-MOUNTINGD
DS(on)
= 0.07 Ω
POWERPACKAGEIN TAPE & REEL
(SUFFIX”T4”)
DESCRIPTION
This MOSFET series realized with
STMicroelectronicsunique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applicationswith low gate drive requirements.
R
DS(on)
2
PAK(TO-263)
I
D
STB24NF10
PRELIMINARY DATA
3
1
D2PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCYDC-DC CONVERTERS
■ UPSAND MOTORCONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/ dt (
E
AS
T
(•) Pulse width limitedby safe operating area (2) starting Tj
April 2000
Dra in- sour c e Vol ta ge (VGS= 0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ) 100 V
DGR
Gate-s ource Voltage ± 20 V
GS
Dra in Current ( cont inuous) at Tc=25oC24A
I
D
Dra in Current ( cont inuous) at Tc= 100oC15A
I
D
(•) Dra in Current ( pulsed) 96 A
Tot al Dissipatio n a t Tc=25oC80W
tot
Der ati ng Fact or 0.53 W/
1 ) Peak Diode Reco ve ry volta ge slope 9 V/ns
(2) Single Pu lse Avalanche Energy 75 m J
St orage T e m pe ra tur e -65 to 175
stg
Max. Operat ing Junct ion Temperat ur e 175
T
j
=25oC, ID=24A, VDD= 50V (1) ISD≤ 24 A, di/dt ≤ 300A/µs, VDD≤ V
(BR)DSS,Tj≤TJMA
o
C
o
C
o
C
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STB24NF10
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Temperat ur e For So lder ing Purp ose
l
1.87
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current ( V
GS
Gat e- bod y L eak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A 234V
Sta t ic Drain-sourc e On
VGS=10V ID= 12 A 0.07 0. 07 7 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
24 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input C apacitance
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=12 A 20 S
VDS=25V f=1MHz VGS= 0 870
125
52
µA
µ
pF
pF
pF
A
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Page 3
STB24NF10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Tur n-on Delay Tim e
Rise Ti m e
t
r
VDD=50V ID=12A
R
=4.7
G
Ω
VGS=10V
58
45
(Resis t iv e Loa d, see fig. 3 )
Q
Q
Q
Tot al G at e Charge
g
Gat e- Source Charg e
gs
Gate-Drain Charge
gd
VDD=80V ID=24A VGS=10V 30
6
10
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Tur n-of f D elay Time
t
Fall T ime
f
VDD=27V ID=12A
=4.7 Ω VGS=10V
R
G
49
17
(Resis t iv e Loa d, see fig. 3 )
t
d(off)
Off-voltage Ris e Time
t
Fall T ime
f
t
Cross-over T ime
c
Vclamp = 80 V ID=24A
=4.7 Ω VGS=10V
R
G
(Indu ct iv e Load, see fig . 5)
43
36
39
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗)Pulsed:Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
24
96
(pulsed)
(∗)ForwardOnVoltage ISD=24A VGS=0 1.5 V
Reverse Recover y
rr
Time
Reverse Recover y
rr
ISD= 24 A di/dt = 100 A/µs
=50V Tj=150oC
V
DD
(see test circuit, fig. 5)
100
375
Charge
Reverse Recover y
7.5
Current
ns
ns
nC
nC
nC
ns
ns
ns
ns
ns
A
A
ns
nC
A
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STB24NF10
Fig. 1
: UnclampedInductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
ResistiveLoad
Fig. 2
: UnclampedInductiveWaveform
Fig. 4: Gate Charge test Circuit
Fig. 5
: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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Page 5
TO-263 (D2PAK) MECHANICAL DATA
STB24NF10
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368
E 10 10.4 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm inch
D
A
C2
DETAIL”A”
C
A2
DETAIL”A”
A1
B2
E
L2
L
L3
B
G
P011P6/E
5/6
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STB24NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademarkof STMicroelectronics
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