Datasheet SSM3J14T Datasheet (TOSHIBA)

查询SSM3J14T供应商

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

SSM3J14T

SSM3J14T

Power Management Switch

DC-DC Converters

· Suitable for high-density mounting due to compact package

· Low on Resistance : R

: R

· High-speed switching

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-Source voltage V

Gate-Source voltage V

Drain current

Drain power dissipation

Channel temperature T

Storage temperature range T

= 145 mΩ (max) (@VGS = −4.5 V)

on

= 85 mΩ (max) (@VGS = −10 V)

on

(Ta ==== 25°C)

DC I

Pulse

DS

GSS

D

I

DP

(Note 2)

PD t = 10 s 1.25

(Note 1) 0.7

ch

stg

-55 to 150 °C

-30

±20

-2.7

-5.4

150 °C

V

V

A

W

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3S1A

Note 1: Mounted on FR4 board

(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm

Note 2: The pulse width limited by maximum channel temperature.

2

)

Weight: 10 mg (typ.)

Marking Equivalent Circuit

3

KDL

1 2

3

12

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account

th (ch-a)

and the drain power dissipation PD vary according to the

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SSM3J14T

V

Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-source breakdown voltage

Drain cut-off current I

Gate threshold voltage Vth VDS = -5 V, ID = -0.1 mA -0.8 ¾ -2.0 V

Forward transfer admittance |Yfs| VDS = -5 V, ID = -1.35 A (Note 3) 2.0

Drain-source on resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time ton ¾ 29 ¾

Turn-off time t

(Ta ==== 25°C)

V

V

VGS = ±16 V, VDS = 0 ¾ ¾ ±1 mA

GSS

(BR) DSSID

(BR) DSXID

DSS

DS (ON)

VDS = -15 V, VGS = 0, f = 1 MHz ¾ 413 ¾ pF

iss

VDS = -15 V, VGS = 0, f = 1 MHz ¾ 77 ¾ pF

rss

oss

off

= -1 mA, VGS = 0 -30 ¾ ¾ V

= -1 mA, VGS = 20 V -15 ¾ ¾ V

VDS = -30 V, VGS = 0 ¾ ¾ -1 mA

¾

ID = -1.35 A, VGS = -10 V (Note 3) ¾ 63 85

ID = -1.35 A, VGS = -4.5 V (Note 3) ¾ 106 145

I

= -1.35 A, VGS = -4.0 V (Note 3) ¾ 120 170

D

VDS = -15 V, VGS = 0, f = 1 MHz ¾ 113 ¾ pF

= -15 V, ID = -1 A

V

DD

= 0~-4 V, RG = 10 W

V

GS

¾ 29 ¾

¾ S

Note 3: Pulse test

mW

ns

Switching Time Test Circuit

(a) Test circuit

0

-4

10 ms

IN

VDD = -10 V

OUT

R

= 4.7 W

G

D.U.<1%
V

IN

Common source
Ta = 25°C

G

R

V

DD

: tr, tf < 5 ns

(b) VIN

(c) V

OUT

0 V

-4 V

V

DS (ON)

V

DD

10%

90%

10%

tr t

ton t

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA
for this product. For normal switching operation, V
requires lower voltage than V

(relationship can be established as follows: V

th

.

GS (off)

Please take this into consideration for using the device.

V

recommended voltage of -4 V or higher to turn on this product.

GS

requires higher voltage than Vth and V

GS (on)

< Vth < V

GS (on)

)

90%

f

off

GS (off)

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-6

-5 V -10 V

-4

(A)

D

-2

Drain current I

0

0 -0.5 -1 -1.5 -2

Drain-source voltage VDS (V)

300

Drain-Source on resistance

Common source

Ta = 25°C

250

200

(mW)

150

DS (ON)

100

R

50

0

0 -1 -2 -3 -4 -5 -6 -7

Drain current ID (A)

300

(mW)

DS (ON)

R

Common source

ID = -1.35 A

250

200

150

100

50

0

-25

0 25 15050 75 100 125

Ambient temperature Ta (°C)

Drain-Source on resistance

I

D

R

DS (ON)

R

DS (ON)

– VDS

-3.5 V -4 V

–ID

VGS = -4 V

– Ta

VGS = -4 V

Common source
Ta = 25°C

-3 V

VGS = -2.5V

-4.5 V

-10 V

-4.5 V

-10 V

– VGS

I

100°C

D

-25°C

Ta = 25°C

-3 -4 -2

-10000

Common source

VDS = -5 V

-1000

-100

(mA)

D

-10

-1

Drain current I

-0.1

-0.01

0

-1

Gate-source voltage VGS (V)

1000

R

(mW)

100

DS (ON)

R

Drain-Source on resistance

10

0 -5

Gate-source voltage VGS (V)

– VGS

DS (ON)

Common source

ID = -1.35 A

25°C

-10 -15 -20

Ta = 100°C

-25°C

|Y

| – ID

fs

10

3

1

| (S)

fs

0.3

|Y

0.1

Forward transfer admittance

0.03

-0.01

Drain current ID (A)

Common source

VDS = -5 V
Ta = 25°C

-10-1 -0.1

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-1.8

-1.6

-1.4

(V)

th

-1.2

-1.0

-0.8

-0.6

-0.4

Gate threshold voltage V

-0.2

0

-25 1500

25 50 75 100 125

Ambient temperature Ta (°C)

V

– Ta

th

Common source

VDS = -5 V

ID = -0.1 mA

1000

300

100

30

Switching time t (ns)

10

tf

ton

3

-0.01 -10-1 -0.1

Drain current ID (A)

t – I

D

Common source

VDD = -15 V

VGS = 0~-4 V

Ta = 25°C

RG = 10 W

t

off

tr

-10

-8

(V)

GS

-6

-4

Dynamic input characteristic

Common source

ID = -2.7 A

Ta = 25°C

-12 V

VDD = -24 V

-2

Gate-source voltage V

0

0 2 4 6 10 12 8

Total gate charge Qg (nC)

DS

Common source

VGS = 0

f = 1 MHz

Ta = 25°C

Capacitance C (pF)

700

600

500

400

300

200

100

C – V

0

0

-5 -15 -25

Drain-source voltage VDS (V)

– VDS

I

DR

D

(A)

DR

-3
Common source

VGS = 0

Ta = 25°C

-2

G

S

-1

Drain reverse current I

0

0 0.2 0.4 0.6 0.8 1

Drain-source voltage VDS (V)

– Ta

P

1.5

t = 10 s

(W)

D

1

DC

0.5

Drain power dissipation P

0

0 50 100 150 200

Ambient temperature Ta (°C)

D

Mounted on FR4 board

(25.4 mm ´ 25.4 mm ´ 1.6 t,

Cu Pad: 645 mm2）

Ciss

Coss

Crss

-35-10 -20 -30

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SSM3J14T

300

Single pulse

Mounted on FR4 board

100

(25.4 mm ´ 25.4 mm ´ 1.6 t,

Cu Pad: 645 mm2)

30

(°C /W)

10

th

r

3

Transient thermal impedance

1

Pulse width tw (s)

r

th

– tw

1000 0.001 0.01 0.1 1 100 10

-10

ID max (pulse)

ID max (continuous)

-3

Safe operating area

-1

(A)

D

Drain current I

DC operation

Ta = 25°C

-0.3

Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,

-0.1
Cu Pad: 645 mm2)

*: Single pulse

Ta = 25°C

-0.03
Curves must be derated

linearly with increase in
temperature.

-0.01

-0.1

-0.3 -1 -3 -10 -30 -100

Drain-source voltage VDS (V)

10 s*

10 ms*

1 ms*

V

DSS

max

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A

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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