Datasheet RMLA3565-53 Datasheet (Raytheon)

Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised September 24, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRELIMINARY INFORMATION
Description
Absolute
Maximum
Ratings
Electrical
Characteristics
1
18.0 dB Gain1.35 dB Noise FigureSingle Positive BiasSmall Outline Metal Base Quad Plastic Package
Features
Notes:
1. Operated at 25 °C and Vdd=4.0V, 50 system
2. Pin = -20 dBm, Freq 2.5 - 6.5 GHz
3. Data de-embedded from fixture loss
Parameter Symbol Value Unit
Positive Drain DC Voltage V
dd
6.5 V
RF Input Power (from 50W source) P
IN
(CW) 0 dBm
Drain Current I
dd
110 mA
Case Operating Temperature T
case
-40 to 100 °C
Storage Temperature Range T
storage
-40 to 110 °C
Soldering Temperature T
solder
220 °C
Thermal Resistance 77.5 °C/W
RMLA3565-58
Wideband Low Noise MMIC Amplifier
Parameter Min Typ Max Unit
Frequency Range 3.5 6.5 GHz Gain (Small Signal)
2
17.0 18.0 dB Gain Variation vs Temp -0.013 dB/°C Noise Figure
3
3.5 - 5 GHz 1.7 1.9 dB 5 - 6.5 GHz 1.3 1.4 dB
Parameter Min Typ Max Unit
Input/Output Return Loss -10.0 -5.0 dB Power Out, P-1dB 8.0 9.0 dBm IP3 @ 5.5GHz,-8dBm Out 21.0 dBm Idd 70.0 90.0 mA Vdd 3.0 4.0 6.0 V
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised September 24, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRELIMINARY INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier packaged in a surface mount package. It may be noted that the chip is a fully monolithic single ended two stage amplifier for
3.5 to 6.5 GHz applications. Figure 1 shows the functional block diagram of the packaged product.
Test Fixture
Figure 2 shows the outline and pin-out descriptions for the packaged device. A typical test fixture schematic showing external bias components is shown in figure 3. Figure 4 shows typical layout of an evaluation board corresponding to the schematic diagram. A typical performance obtained from the test fixture is shown in figure
5. The following should be noted: (1) Package pin designations are as shown in figure 2. (2) Vd is the Drain Voltage (positive) applied at the pins of the package (3) Vdd is the positive supply voltage at the evaluation board terminal
Application
Information
Figure 1
Functional Block
Diagram
RF IN Pin# 8
RF OUT Pin# 2
Ground Pin# 1,3,4,6,9,10,11,13
Vd Pin# 12
Ground Pin# 7
Ground Pin# 5
RMLA3565-58
Wideband Low Noise MMIC Amplifier
Figure 2
Outline
Dimensions
Dimensions in inches
Pin# Description
1GND
2 RF Out
3 GND
4 GND 5 GND 6 GND
7 GND 8 RF In 9 GND 10 GND 11 GND 12 Vd 13 GND
(Package Base)
PLASTIC LID
SIDE SECTION
0.069 MAX.
0.010
0.230
0.246
0.282
1
2
3
546
7
9
8
10
12
11
0.041
1
2
3
0.015
0.200 SQ.
TOP VIEWTOP VIEW
BOTTOM VIEW
54
6
7
9
8
10 12
11
0.030
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised September 24, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRELIMINARY INFORMATION
Figure 4
Layout and Assembly of
Test Evaluation Board
(RMLA3565-58-TB)
RMLA3565-58
Wideband Low Noise MMIC Amplifier
Figure 3
Schematic for a Typical
Test Evaluation Board
(RMLA3565-58-TB)
C1
C2 (OPT)
C3
Vdd P1
RF in J1
RF out J2
GRND P2
The following sequence of procedure must be followed to properly test the power amplifier:
Test Procedure
for the evaluation board
(RMLA3565-58-TB)
Step 1: Turn off RF input power. Step 2: Use GND terminal of the evaluation board for
DC supplies.
Step 3: Apply drain supply voltages of +4.0 V to
evaluation board terminal Vdd.
Step 4: After the bias condition is established, RF input
signal may now be applied.
Step 5: Follow turn-off sequence of:
(i) Turn off RF Input Power (ii) Turn down and off Vdd
Parts List
for Test Evaluation Board
(RMLA3565-58-TB)
Part Value EIA Size Vendor(s)
C1 330 pF .04” x .02” AVX, Murata, Novacap, C2 1000 pF .04” x .02” AVX, Murata, Novacap C3 4.75 uF .14”x .11” Sprague, ATC, AVX, Murata, U1 RMLA3565-58 .28” x .28” x .07 Raytheon P1, P2 Terminal Samtec J1, J2 SMA Connectors E.F. Johnson Board RO4003(Rogers) 1.99x1.50x.032 Raytheon
-58
RF Out J2
U1
RF In J1
C1 & C2
(OPT)
C3
Ground (GND) P2
Vdd P1
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised September 24, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRELIMINARY INFORMATION
Performance
Data
Gain, Power, and Noise Figure
Vdd=4.0V, Idd=65.5mA
Input Return Loss
Vdd=4.0V, Idd=65.5mA
Output Return Loss
Vdd=4.0V, Idd=65.5mA
Noise Figure, Gain, & Idd vs. Vdd
Frequency = 5.0GHz
B
B
B
B
B
B
B
B
B
B
B
25
20
15
10
5
0
3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
Frequency(GHz)
B
B
B
B
B
B
B
B
B
B
B
B
25
20
15
10
5
0
3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
Frequency(GHz)
B
B
B
B
B
J
J
J
J
J
H
H
H
H
H
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
10
12
14
16
18
20
22
24
26
28
30
23456
Vds(V)
NF
Ids
Gain
B
B
B
B
B
BB
B
B
B
B
J
J
J
J
J
J
J
J
J
J
H
H
H
H
H
H
H
H
H
4
6
8
10
12
14
16
18
20
22
24
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
Frequency(GHz)
Gain
NF
P-1dB
RMLA3565-58
Wideband Low Noise MMIC Amplifier
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised September 24, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRELIMINARY INFORMATION
D&L Technical Sales
6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. dlarizona@aol.com
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North
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Sirces srl
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Sea Union
9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su murphy@seaunionweb.com.tw
Globes Elektronik & Co.
Klarastrabe 12 74072 Heilbronn Germany 49-7131-7810-0 fax: 49-7131-7810-20 Ulrich Blievernicht hfwelt@globes.de
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United States
(East Coast)
Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com
Sales Office
Headquarters
978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com
Customer
Support
Europe
Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com
Asia
Raytheon Room 601, Gook Je Ctr. Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com
United States
(West Coast)
Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com
United Kingdom
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France
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Europe
Asia
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Worldwide
Distribution
Worldwide Sales Representatives
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