Page 1
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
92
August 31, 1994 853-0887 13721
DESCRIPTION
The NE5517 contains two current-controlled transconductance
amplifiers, each with a differential input and push-pull output. The
NE5517 offers significant design and performance advantages over
similar devices for all types of programmable gain applications.
Circuit performance is enhanced through the use of linearizing
diodes at the inputs which enable a 10dB signal-to-noise
improvement referenced to 0.5% THD. The NE5517 is suited for a
wide variety of industrial and consumer applications and is
recommended as the preferred circuit in the Dolby* HX (Headroom
Extension) system.
Constant impedance buffers on the chip allow general use of the
NE5517. These buffers are made of Darlington transistor and a
biasing network which changes bias current in dependence of I
ABC
.
Therefore, changes of output offset voltages are almost eliminated.
This is an advantage of the NE5517 compared to LM13600. With
the LM13600, a burst in the bias current I
ABC
guides to an audible
offset voltage change at the output. With the constant impedance
buffers of the NE5517 this effect can be avoided and makes this
circuit preferable for high quality audio applications.
FEATURES
•Constant impedance buffers
•∆VBE of buffer is constant with amplifier IBIAS change
•Pin compatible with LM13600
•Excellent matching between amplifiers
•Linearizing diodes
•High output signal-to-noise ratio
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
I
ABCa
D
a
+IN
a
-IN
a
VO
a
V-
INBUFFER
a
VO
BUFFERa
I
ABCb
D
b
+IN
b
-IN
b
VO
b
V+
IN
BUFFERb
VO
BUFFERb
N, D Packages
Top View
APPLICATIONS
•Multiplexers
•Timers
•Electronic music synthesizers
•Dolby HX Systems
•Current-controlled amplifiers, filters
•Current-controlled oscillators, impedances
Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.
PIN DESIGNATION
PIN NO. SYMBOL NAME AND FUNCTION
1 I
ABC
Amplifier bias input A
2 D Diode bias A
3 +IN Non-inverting input A
4 -IN Inverting input A
5 V
O
Output A
6 V- Negative supply
7 IN
BUFFER
Buffer input A
8 VO
BUFFER
Buffer output A
9 VO
BUFFER
Buffer output B
10 IN
BUFFER
Buffer input B
11 V+ Positive supply
12 V
O
Output B
13 -IN Inverting input B
14 +IN Non-inverting input B
15 D Diode bias B
16 I
ABC
Amplifier bias input B
Page 2
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
93
CIRCUIT SCHEMATIC
V+
11
D4
Q6
Q7
2,15
D2
Q4
Q5
D3
–INPUT
4,13
+INPUT
3,14
AMP BIAS
INPUT
1,16
Q2
Q1
D1
V–
6
Q10
D6
Q11
V
OUTPUT
5,12
Q9
Q8
D5
Q14
Q15 Q16
R1
D7
D8
Q3
7,10
Q12
Q13
8,9
CONNECTION DIAGRAM
NOTE:
1. V+ of output buffers and amplifiers are internally connected.
B
AMP
BIAS
INPUT
B
DIODE
BIAS
B
INPUT
(+)
B
INPUT
(–)
B
OUTPUT
V+ (1)
B
BUFFER
INPUT
B
BUFFER
OUTPUT
AMP
BIAS
INPUT
DIODE
BIAS
INPUT
(+)
INPUT
(–)
OUTPUT
V–
BUFFER
INPUT
BUFFER
OUTPUT
A
A A
A
A
A
A
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
–
+
B
+
–
A
Page 3
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
94
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
16-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5517N 0406C
16-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5517AN 0406C
16-Pin Small Outline (SO) Package 0 to +70°C NE5517D 0005D
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
V
S
Supply voltage
1
NE5517 36 VDC or ±18 V
NE5517A 44 VDC or ±22 V
P
D
Power dissipation,
T
A
=25°C (still air)
2
NE5517N, NE5517AN 1500 mW
NE5517D 1125 mW
V
IN
Differential input voltage ±5 V
I
D
Diode bias current 2 mA
I
ABC
Amplifier bias current 2 mA
I
SC
Output short-circuit duration Indefinite
I
OUT
Buffer output current
3
20 mA
T
A
Operating temperature range
NE5517N, NE5517AN 0°C to +70 °C
V
DC
DC input voltage +VS to -V
S
T
STG
Storage temperature range -65°C to +150°C °C
T
SOLD
Lead soldering temperature (10sec max) 300 °C
NOTES:
1. For selections to a supply voltage above ±22V, contact factory
2. The following derating factors should be applied above 25°C
N package at 12.0mW/°C
D package at 9.0mW/°C
3. Buffer output current should be limited so as to not exceed package dissipation.
DC ELECTRICAL CHARACTERISTICS
1
NE5517 NE5517A
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max Min Typ Max
UNIT
0.4 5 0.4 2 mV
V
OS
Input offset voltage Over temperature range 5 mV
I
ABC
5µA 0.3 5 0.3 2 mV
∆VOS/∆T Avg. TC of input offset voltage 7 7 µV/°C
VOS including diodes Diode bias current (ID)=500µA 0.5 5 0.5 2 mV
V
OS
Input offset change 5µA ≤ I
ABC
≤ 500µA 0.1 0.1 3 mV
I
OS
Input offset current 0.1 0.6 0.1 0.6 µA
∆IOS/∆T Avg. TC of input offset current 0.001 0.001 µA/°C
I
BIAS
Input bias current
Over temperature range
0.4
1
5
8
0.4
1
5
7
µA
µA
∆IB/∆T Avg. TC of input current 0.01 0.01 µA/°C
g
M
Forward transconductance
Over temperature range
6700
5400
9600 13000 7700
4000
9600 12000 µmho
µmho
gM tracking 0.3 0.3 dB
I
OUT
Peak output current
RL=0, I
ABC
=5µA
R
L
=0, I
ABC
=500µA
R
L
=0,
350
300
5
500
650
3
350
300
5
5007650
µA
µA
µA
Page 4
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
95
DC ELECTRICAL CHARACTERISTICS1 (continued)
NE5517 NE5517A
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max Min Typ Max
UNIT
V
OUT
Peak output voltage
Positive RL=∞, 5µA≤I
ABC
≤500µA +12 +14.2 +12 +14.2 V
Negative RL=∞, 5µA≤I
ABC
≤500µA -12 -14.4 -12 -14.4 V
I
CC
Supply current I
ABC
=500µA, both channels 2.6 4 2.6 4 mA
VOS sensitivity
Positive ∆ VOS/∆ V+ 20 150 20 150 µV/V
Negative ∆ VOS/∆ V- 20 150 20 150 µV/V
CMRR
Common-mode rejection
ration
80 110 80 110 dB
Common-mode range ±12 ±13.5 ±12 ±13.5 V
Crosstalk
Referred to input2
20Hz<f<20kHz
100 100 dB
I
IN
Differential input current I
ABC
=0, input=±4V 0.02 100 0.02 10 nA
Leakage current I
ABC
=0 (Refer to test circuit) 0.2 100 0.2 5 nA
R
IN
Input resistance 10 26 10 26 kΩ
B
W
Open-loop bandwidth 2 2 MHz
SR Slew rate Unity gain compensated 50 50 V/µs
IN
BUFFER
Buff. input current 5 0.4 5 0.4 5 µA
VO-
BUFFER
Peak buffer output voltage 5 10 10 V
∆VBE of buffer
Refer to Buffer VBE test3
circuit
0.5 5 0.5 5 mV
NOTES:
1. These specifications apply for VS=±15V, TA=25°C, amplifier bias current (I
ABC
)=500µA, Pins 2 and 15 open unless otherwise specified. The
inputs to the buffers are grounded and outputs are open.
2. These specifications apply for V
S
=±15V, I
ABC
=500µA, R
OUT
=5kΩ connected from the buffer output to -VS and the input of the buffer is
connected to the transconductance amplifier output.
3. V
S
=±15, R
OUT
=5kΩ connected from Buffer output to -VS and 5µA ≤I
ABC
≤500µA.
Page 5
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
96
TYPICAL PERFORMANCE CHARACTERISTICS
V
OUT
V
CMR
V
OUT
µ
10
10
10
10
1
PEAK OUTPUT CURRENT ( A)
.1µA 1µA 10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (I
ABC
)
VS = ±15V
+125°C
4
3
2
+25°C
-55°C
Peak Output Current
10
10
10
10
10
4
3
2
5
-50°C -25°C 0°C 25°C 50°C 75°C100°C125°C
Leakage Current
0V
(+)VIN = (–)VIN = V
OUT
= 36V
LEAKAGE CURRENT (pA)
AMBIENT TEMPERATURE (TA)
µ
10
10
10
10
10
TRANSCONDUCTANCE (gM) — ( ohm)
4
3
2
.1µA 1µA 10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (I
ABC
)
VS = ±15V
+125°C
+25°C
-55°C
Transconductance
5
gM
mq
m
M
PINS 2, 15
OPEN
Ω
10
10
1
.1
.01
INPUT RESISTANCE (MEG )
1
2
.1µA 1µA 10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (I
ABC
)
Input Resistance
PINS 2, 15
OPEN
10
10
10
10
1
INPUT LEAKAGE CURRENT (pA)
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125°C
+25°C
Input Leakage
0 1 2 3 4 5 6 7
10
10
10
10
1
INPUT BIAS CURRENT (nA)
3
4
.1µA 1µA 10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (I
ABC
)
Input Bias Current
VS = ±15V
+125°C
+25°C
-55°C
2
10
10
10
1
0.1
INPUT OFFSET CURRENT (nA)
2
3
.1µA 1µA 10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (I
ABC
)
Input Bias Current
VS = ±15V
+125°C
+25°C
-55°C
5
INPUT OFFSET VOLTAGE (mV)
.1µA 1µA 10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (I
ABC
)
Input Offset Voltage
VS = ±15V
+125°C
+25°C
-55°C
+125°C
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
5
PEAK OUTPUT VOLTAGE AND
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
.1µA 1µA 10µA 100µA 1000µA
AMPLIFIER BIAS CURRENT (I
ABC
)
Peak Output Voltage and
Common-Mode Range
VS = ±15V
TA = 25°C
V
CMR
RLOAD = ∞
COMMON-MODE RANGE (V)
Page 6
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
97
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1 VOLT RMS (dB)
20
0
-20
-40
-60
-80
-100
OUTPUT VOLTAGE RELATIVE TO
.1µA 1µA 10µA 100µA 1000µA
I
ABC
AMPLIFIER BIAS CURRENT (µA)
VS = ±15V
RL = 10kΩ
OUTPUT NOISE
20kHz BW
VIN = 40mV
P-P
VIN = 80mV
P-P
VS = ±15V
TA = +25°C
C
IN
C
OUT
7
6
5
4
3
2
1
0
.1µA 1µA 10µA 100µA 1000µA
CAPACITANCE (pF)
AMPLIFIER BIAS CURRENT (I
ABC
)
.1µA 1µA 10µA 100µA 1000µA
2000
1800
1600
1400
1200
1000
800
600
400
200
0
AMPLIFIER BIAS VOLTAGE (mV)
AMPLIFIER BIAS CURRENT (I
ABC
)
-55°C
+25°C
+125°C
OUTPUT DISTORTION (%)
100
10
1
0.1
0.01
1 10 100 1000
DIFFERENTIAL INPUT VOLTAGE (mV
P-P
)
600
500
400
300
200
100
0
10 100 1k 10k 100k
OUTPUT NOISE CURRENT (pA/Hz)
FREQUENCY (Hz)
I
ABC
= 1mA
I
ABC
= 100µA
Amplifier Bias Voltage vs
Amplifier Bias Current
Input and Output Capacitance
Distortion vs Differential
Input Voltage
Voltage vs Amplifier Bias Current Noise vs Frequency
I
ABC
= 1mA
RL = 10kΩ
Page 7
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
98
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Leakage Current Test Circuit Differential Input Current Test Circuit
Buffer V
BE
Test Circuit
4, 13
2, 15
3, 14
–
+
NE5517
11
6
1, 15
5, 12
7, 10
8, 9
A
+36V
4, 13
2, 15
3, 14
–
+
NE5517
11
6
1, 10
5, 12
A
+15V
–15V
4V
V
V+
50kΩ
V–
APPLICATIONS
4, 13
2, 15
3, 14
–
+
NE5517
11
6
5, 12
1, 16
+15V
–15V
7, 10
8, 9
INPUT
OUTPUT
5k
390pF
10k
1.3k
10k
62k
–15V
51Ω
0.01µF
0.001µF
0.01µF
Unity Gain Follower
CIRCUIT DESCRIPTION
The circuit schematic diagram of one-half of the NE5517, a dual
operational transconductance amplifier with linearizing diodes and
impedance buffers, is shown in Figure 1.
1. Transconductance Amplifier
The transistor pair, Q4 and Q5, forms a transconductance stage. The
ratio of their collector currents (I
4
and I5, respectively) is defined by
the differential input voltage, V
IN
, which is shown in equation 1.
V
IN
KT
q
In
I
5
I
4
(1)
Where V
IN
is the difference of the two input voltages
KT ≅ 26mV at room temperature (300°k).
Transistors Q
1
, Q2 and diode D1 form a current mirror which focuses
the sum of current I
4
and I5 to be equal to amplifier bias current IB:
I
4
+ I
5
= I
B
(2)
If V
IN
is small, the ratio of I5 and I4 will approach unity and the Taylor
series of In function can be approximated as
KT
q
In
I
5
I
4
KT
q
I5 I
4
I
4
(3)
Page 8
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
99
and I
4
≅ I5 ≅ I
B
KT
q
In
I
5
I
4
[
KT
q
I5* I
4
1ń 2I
B
+
2KT
q
I5* I
4
I
B
+ V
IN
(4)
I
5
* I4+ V
IN
ǒ
I
B
q
Ǔ
2KT
The remaining transistors (Q6 to Q11) and diodes (D4 to D6) form
three current mirrors that produce an output current equal to I
5
mi-
nus I
4
. Thus:
V
IN
ǒ
I
B
q
2KT
Ǔ
+ I
O
(5)
The term
ǒ
I
B
q
Ǔ
2KT
is then the transconductance
of the amplifier and is proportional to I
B
.
2. Linearizing Diodes
For VIN greater than a few millivolts, equation 3 becomes invalid and
the transconductance increases non-linearly. Figure 2 shows how
the internal diodes can linearize the transfer function of the operational amplifier. Assume D
2
and D3 are biased with current sources
and the input signal current is I
S
. Since
I
4
+ I
5
= IB and I
5
- I
4
= I0, that is:
I
4
= (I
B
- I0), I
5
= (I
B
+ I0)
For the diodes and the input transistors that have identical geometries and are subject to similar voltages and temperatures, the following equation is true:
T
q
In
I
D
2
) I
S
I
D
2
* I
S
+
KT
q
In
1ń 2(I
B
) IO)
1ń 2(I
B
* IO)
(6)
IO+ I
S
2IB
I
D
for |IS| t
I
D
2
The only limitation is that the signal current should not exceed ID.
3. Impedance Buffer
The upper limit of transconductance is defined by the maximum
value of I
B
(2mA). The lowest value of IB for which the amplifier will
function therefore determines the overall dynamic range. At low
values of I
B
, a buffer with very low input bias current is desired. A
Darlington amplifier with constant-current source (Q
14
, Q15, Q16, D7,
D
8
, and R1) suits the need.
APPLICATIONS
Voltage-Controlled Amplifier
In Figure 3, the voltage divider R2, R3 divides the input-voltage into
small values (mV range) so the amplifier operates in a linear manner.
It is:
I
OUT
+ * V
IN
@
R
3
R2) R
3
@ gM;
V
OUT
+ I
OUT
@ RL;
A +
V
OUT
V
IN
+
R
3
R2) R
3
@ gM @ R
L
(3) g
M
= 19.2 I
ABC
(gM in µmhos for I
ABC
in mA)
Since g
M
is directly proportional to I
ABC
, the amplification is con-
trolled by the voltage V
C
in a simple way.
When V
C
is taken relative to -VCC the following formula is valid:
I
ABC
+
(V
C
* 1.2V)
R
1
The 1.2V is the voltage across two base-emitter baths in the current
mirrors. This circuit is the base for many applications of the NE5517.
V+
11
D4
Q6
Q7
2,15
D2
Q4
Q5
D3
–INPUT
4,13
+INPUT
3,14
AMP BIAS
INPUT
1,16
Q2
Q1
D1
V–
6
Q10
D6
Q11
V
OUTPUT
5,12
Q9
Q8
D5
Q14
Q15 Q16
R1
D7
D8
Q3
7,10
Q12
Q13
8,9
Figure 1. Circuit Diagram of NE5517
Page 9
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
100
+V
S
I
D
I
B
I
5
Q
4
1/2I
D
I
S
I
S
1/2I
D
–V
S
I
4
I
5
D
3
D
2
I
D
2
* I
S
I
D
2
) I
S
I0+ I5* I
4
I0+ 2 I
S
ǒ
I
B
I
D
Ǔ
Figure 2. Linearizing Diode
Stereo Amplifier With Gain Control
Figure 4 shows a stereo amplifier with variable gain via a control
input. Excellent tracking of typical 0.3dB is easy to achieve. With the
potentiometer, R
P
, the offset can be adjusted. For AC-coupled ampli-
fiers, the potentiometer may be replaced with two 510Ω resistors.
Modulators
Because the transconductance of an OTA (Operational Transconductance Amplifier) is directly proportional to I
ABC
, the amplification
of a signal can be controlled easily. The output current is the product
from transconductance×input voltage. The circuit is effective up to
approximately 200kHz. Modulation of 99% is easy to achieve.
Voltage-Controlled Resistor (VCR)
Because an OTA is capable of producing an output current proportional to the input voltage, a voltage variable resistor can be made.
Figure 6 shows how this is done. A voltage presented at the R
X
terminals forces a voltage at the input. This voltage is multiplied by
g
M
and thereby forces a current through the RX terminals:
R
X
=
R ) R
A
gM ) R
A
where gM is approximately 19.21 µMHOs at room temperature. Figure 7 shows a Voltage Controlled Resistor using linearizing diodes.
This improves the noise performance of the resistor.
Voltage-Controlled Filters
Figure 8 shows a Voltage Controlled Low-Pass Filter. The circuit is a
unity gain buffer until X
C/gM
is equal to R/RA. Then, the frequency
response rolls off at a 6dB per octave with the -3dB point being defined by the given equations. Operating in the same manner, a Voltage Controlled High-Pass Filter is shown in Figure 9. Higher order
filters can be made using additional amplifiers as shown in Figures
10 and 11.
Voltage-Controlled Oscillators
Figure 12 shows a voltage-controlled triangle-square wave generator. With the indicated values a range from 2Hz to 200kHz is possible by varying I
ABC
from 1mA to 10µA.
The output amplitude is determined by
I
OUT
× R
OUT
.
Please notice the differential input voltage is not allowed to be above
5V.
With a slight modification of this circuit you can get the sawtooth
pulse generator, as shown in Figure 13.
APPLICATION HINTS
To hold the transconductance gM within the linear range, I
ABC
should be chosen not greater than 1mA. The current mirror ratio
should be as accurate as possible over the entire current range. A
current mirror with only two transistors is not recommended. A suitable current mirror can be built with a PNP transistor array which
causes excellent matching and thermal coupling among the transistors. The output current range of the DAC normally reaches from 0
to -2mA. In this application, however, the current range is set
through R
REF
(10kΩ) to 0 to -1mA.
I
DACMAX
+ 2 @
V
REF
R
REF
+ 2 @
5V
10k
+ 1mA
4
6
3
–
+
NE5517
5
11
1
7
8
V
IN
R4 = R2/ /R
3
+V
CC
V
C
R
2
R
3
R
1
R
L
R
S
+V
CC
INT
V
OUT
-V
CC
I
OUT
I
ABC
TYPICAL VALUES:
R
1
= 47k
R
2
= 10k
R
3
= 200Ω
R
4
= 200Ω
RL = 100k
R
S
= 47k
Figure 3.
INT
Page 10
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
101
4
3
–
+
NE5517/A
11
+V
CC
8
V
OUT1
-V
CC
13
6
14
–
+
NE5517/A
9
V
C
R
S
V
OUT2
-V
CC
V
IN1
V
IN2
30k
10k
10k
R
IN
R
IN
R
P
+V
CC
R
D
15k
1
16
12
10k
R
L
5.1k
+V
CC
INT
INT
+V
CC
10k
R
L
10
I
ABC
I
ABC
15
15k
R
P
+V
CC
R
D
1k
R
C
1k
Figure 4. Gain-Controlled Stereo Amplifier
-V
CC
4
6
3
–
+
NE5517/A
8
R
S
V
OUT
-V
CC
V
IN1
10k
1
11
+V
CC
10k
R
L
5
I
D
2
15k
R
C
V
IN2
1k
SIGNAL
30k
I
ABC
7
CARRIER
INT
INT
+V
CC
V
OS
Figure 5. Amplitude Modulator
-V
CC
4
3
–
+
NE5517/A
8
V
OUT
-V
CC
11
+V
CC
R
X
5
I
O
2
R
30k
7
INT
INT
C
200
200
+V
CC
100k
10k
V
C
R
X
+
R ) R
A
gM@ R
A
Figure 6. VCR
Page 11
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
102
-V
CC
4
3
NE5517/A
8
-V
CC
11
+V
CC
R
X
5
I
D
2
R
30k
7
INT
INT
C
+V
CC
100k
10k
V
C
+V
CC
V
OS
R
P
1k
1
6
Figure 7. VCR with Linearizing Diodes
f
O
RAg
M
g(R RA) 2C
NOTE:
-V
CC
4
3
–
+
NE5517/A
8
V
OUT
-V
CC
11
+V
CC
5
I
ABC
2
R
30k
7
INT
INT
C
200
+V
CC
100k
10k
V
C
R
A
1
150pF
6
200
100k
V
IN
Figure 8. Voltage-Controlled Low-Pass Filter
f
O
RAg
M
g(R RA) 2C
NOTE:
-V
CC
4
3
–
+
NE5517/A
8
V
OUT
-V
CC
11
+V
CC
5
I
ABC
2
R
30k
7
INT
INT
C
1k
+V
CC
100k
10k
V
C
R
A
1
6
1k
100k
V
OS
NULL
+V
CC
-V
CC
0.005µF
Figure 9. Voltage-Controlled High-Pass Filter
Page 12
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
103
NOTE:
f
O
RAg
M
(R RA) 2 C
+V
CC
–
+
NE5517/A
V
OUT
-V
CC
+V
CC
15k
INT
INT
10k
V
C
R
A
200
200pF
2C
–
+
NE5517/A
+V
CC
R
A
100k
200
R
100k
10k
C
-V
CC
100pF
100k
-V
CC
V
IN
200
R
A
200
Figure 10. Butterworth Filter – 2nd Order
+V
CC
–
+
NE5517/A
V
OUT
-V
CC
+V
CC
15k
INT
INT
5.1k
V
C
800pF
–
+
NE5517/A
+V
CC
20k
5.1k
-V
CC
800pF
-V
CC
10k
6
11
3
2
1k
1
5
7
20k
1k
13
15
14
12 10
16
LOW
PASS
9
20k
BANDPASS OUT
Figure 11. State Variable Filter
+V
CC
+
–
NE5517/A
V
OUT2
-V
CC
+V
CC
INT
INT
10k
+
–
NE5517/A
+V
CC
20k
-V
CC
-V
CC
6
11
4
3
5
7
14
13
12 10
V
OUT1
GAIN
CONTROL
1
16
47k
V
C
30k
C
0.1µF
8
INT
+V
CC
9
Figure 12. Triangle-Square Wave Generator (VCO)
Page 13
Philips Semiconductors Linear Products Product specification
NE5517/5517ADual operational transconductance amplifier
August 31, 1994
104
I
B
NOTE:
V
PK
+
(VC* 0.8) R
1
R1) R
2
T
H
+
2VPKx C
I
B
T
L
+
2VPKxC
I
C
f
OSC
I
C
2VPKxC
ICt t I
B
+V
CC
–
+
NE5517/A
V
OUT2
-V
CC
+V
CC
INT
INT
–
+
NE5517/A
+V
CC
20k
-V
CC
-V
CC
6
11
4
3
5
7
14
13
12 10
V
OUT1
1
16
47k
V
C
470k
C
0.1µF
8
INT
+V
CC
I
C
2
R
1
30k
30k
R
2
30k
Figure 13. Sawtooth Pulse VCO
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