Page 1
INTEGRATED CIRCUITS
NE/SA5204A
Wide-band high-frequency amplifier
Product specification 1992 Feb 25
RF Communications Handbook
Philips Semiconductors
Page 2
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
DESCRIPTION
The NE/SA5204A family of wideband amplifiers replaces the
NE/SA5204 family . The ‘A’ parts are fabricated on a rugged 2µm
bipolar process featuring excellent statistical process control.
Electrical performance is nomically identical to the original parts.
The NE/SA5204A is a high-frequency amplifier with a fixed insertion
gain of 20dB. The gain is flat to ±0.5dB from DC to 200MHz. The
-3dB bandwidth is greater than 350MHz. This performance makes
the amplifier ideal for cable TV applications. The NE/SA5204A
operates with a single supply of 6V, and only draws 25mA of supply
current, which is much less than comparable hybrid parts. The noise
figure is 4.8dB in a 75Ω system and 6dB in a 50Ω system.
The NE/SA5204A is a relaxed version of the NE5205. Minimum
guaranteed bandwidth is relaxed to 350MHz and the “S” parameter
Min/Max limits are specified as typicals only.
Until now, most RF or high-frequency designers had to settle for
discrete or hybrid solutions to their amplification problems. Most of
these solutions required trade-offs that the designer had to accept in
order to use high-frequency gain stages. These include high power
consumption, large component count, transformers, large packages
with heat sinks, and high part cost. The NE/SA5204A solves these
problems by incorporating a wideband amplifier on a single
monolithic chip.
The part is well matched to 50 or 75Ω input and output impedances.
The standing wave ratios in 50 and 75Ω systems do not exceed 1.5
on either the input or output over the entire DC to 350MHz operating
range.
Since the part is a small, monolithic IC die, problems such as stray
capacitance are minimized. The die size is small enough to fit into a
very cost-effective 8-pin small-outline (SO) package to further
reduce parasitic effects.
No external components are needed other than AC-coupling
capacitors because the NE/SA5204A is internally compensated and
matched to 50 and 75Ω. The amplifier has very good distortion
specifications, with second and third-order intermodulation
intercepts of +24dBm and +17dBm, respectively, at 100MHz.
The part is well matched for 50Ω test equipment such as signal
generators, oscilloscopes, frequency counters, and all kinds of
signal analyzers. Other applications at 50Ω include mobile radio, CB
radio, and data/video transmission in fiber optics, as well as
broadband LANs and telecom systems. A gain greater than 20dB
can be achieved by cascading additional NE/SA5204As in series as
required, without any degradation in amplifier stability.
PIN CONFIGURA TION
N, D Packages
1
V
CC
2
V
IN
3
GND
GND
TOP VIEW
Figure 1. Pin Configuration
20dB
8
V
CC
7
V
OUT
6
GND
54
GND
FEATURES
•Bandwidth (min.)
200 MHz, ±0.5dB
350 MHz, -3dB
•20dB insertion gain
•4.8dB (6dB) noise figure Z
=75Ω (ZO=50Ω)
O
•No external components required
•Input and output impedances matched to 50/75Ω systems
•Surface-mount package available
•Cascadable
•2000V ESD protection
APPLICATIONS
•Antenna amplifiers
•Amplified splitters
•Signal generators
•Frequency counters
•Oscilloscopes
•Signal analyzers
•Broadband LANs
•Networks
•Modems
•Mobile radio
•Security systems
•Telecommunications
SR00193
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5204AN SOT97-1
8-Pin Plastic Small Outline (SO) package 0 to +70°C NE5204AD SOT96-1
8-Pin Plastic Dual In-Line Package (DIP) –40 to +85°C SA5204AN SOT97-1
8-Pin Plastic Small Outline (SO) package –40 to +85°C SA5204AD SOT96-1
1992 Feb 25 853-1599 05790
2
Page 3
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
V
CC
V
IN
T
A
P
DMAX
T
J
T
STG
T
SOLD
NOTES:
1. Derate above 25°C, at the following rates
N package at 9.3mW/°C
D package at 6.2mW/°C
2. See “Power Dissipation Considerations” section.
Supply voltage 9 V
AC input voltage 5 V
P–P
Operating ambient temperature range
NE grade 0 to +70 °C
SA grade –40 to +85 °C
Maximum power dissipation
1, 2
TA=25°C(still–air)
N package 1160 mW
D package 780 mW
Junction temperature 150 °C
Storage temperature range –55 to +150 °C
Lead temperature
(soldering 60s)
300 °C
EQUIVALENT SCHEMATIC
V
IN
V
CC
R
1
Q
3
Q
1
R
E1
Q
4
R
F1
R
F2
Figure 2. Equivalent Schematic
R
2
R
0
Q
6
Q
2
R
3
R
E2
Q
5
V
OUT
SR00194
1992 Feb 25
3
Page 4
Philips Semiconductors Product specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
S11
I
dB
S22
Output
dB
S12
Isolati
dB
NE/SA5204AWide-band high-frequency amplifier
DC ELECTRICAL CHARACTERISTICS
VCC=6V, ZS=ZL=ZO=50Ω and TA=25°C, in all packages, unless otherwise specified.
LIMITS
Min Typ Max
V
CC
I
CC
S21 Insertion gain f=100MHz, over temperature 16 19 22 dB
BW Bandwidth ±0.5dB 200 350 MHz
BW Bandwidth –3dB 350 550 MHz
t
R
t
P
Operating supply voltage range Over temperature 5 8 V
Supply current Over temperature 19 25 33 mA
nput return loss
return loss
on
f=100MHz 25
DC –550MHz 12
f=100MHz 27
DC –550MHz 12
f=100MHz –25
DC –550MHz –18
Noise figure (75Ω) f=100MHz 4.8 dB
Noise figure (50Ω) f=100MHz 6.0 dB
Saturated output power f=100MHz +7.0 dBm
1dB gain compression f=100MHz +4.0 dBm
Third–order intermodulation inter-
cept (output)
Second–order intermodulation inter-
cept (output)
f=100MHz +17 dBm
f=100MHz +24 dBm
Rise time 500 ps
Propagation delay 500 ps
35
34
32
30
28
26
24
22
20
SUPPLY CURRENT—mA
18
16
TA = 25oC
5 5.5 6 6.5 7 7.5 8
SUPPLY VOLTAGE—V
Figure 3. Supply Current vs Supply Voltage
SR00195
9
8
7
NOISE FIGURE—dBm
6
5
10
vcc = 8v
vcc = 7v
vcc = 6v
vcc = 5v
12 468 2 468
ZO = 50Ω
= 25oC
T
A
2
10
FREQUENCY—MHz
Figure 4. Noise Figure vs Frequency
3
10
SR00196
1992 Feb 25
4
Page 5
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
25
vcc = 8v
v
= 7v
20
15
ZO = 50Ω
INSERTION GAIN—dB
= 25oC
T
A
10
12 468 2 468
10
10
FREQUENCY—MHz
cc
vcc = 6v
vcc = 5v
2
Figure 5. Insertion Gain vs Frequency (S21)
25
TA = 55oC
TA = 85oC
TA =
125oC
2
10
TA = 25oC
20
15
INSERTION GAIN—dB
VCC = 8V
= 50Ω
Z
O
10
12 468 2 468
10
FREQUENCY—MHz
Figure 6. Insertion Gain vs Frequency (S21)
3
10
SR00197
3
10
SR00199
10
9
8
7
6
V
6V
CC =
5
4
3
V
CC =
2
1
0
–1
–2
OUTPUT LEVEL—dBm
–3
–4
–5
–6
ZO = 50Ω
T
A
12 468 2 468
10
5V
= 25oC
V
7V
CC =
2
10
FREQUENCY—MHz
V
CC =
8V
3
10
SR00198
Figure 8. 1dB Gain Compression vs Frequency
40
35
30
25
20
15
SECOND–ORDER INTERCEPT—dBm
10
45678910
POWER SUPPLY VOLTAGE—V
ZO = 50Ω
= 25oC
T
A
SR00200
Figure 9. Second-Order Output Intercept vs Supply Voltage
11
10
9
8
7
6
5
4
VCC = 7V
3
2
VCC = 6V
1
VCC = 5V
0
–1
–2
–3
OUTPUT LEVEL—dBm
ZO = 50Ω
–4
–5
–6
= 25oC
T
A
12 468 2 468
10
VCC = 8V
2
FREQUENCY—MHz
10
Figure 7. Saturated Output Power vs Frequency
1992 Feb 25
3
10
SR00201
30
25
20
15
10
THIRD–ORDER INTERCEPT—dBm
5
45678910
POWER SUPPLY VOLTAGE—V
ZO = 50Ω
= 25oC
T
A
SR00202
Figure 10. Third-Order Intercept vs Supply Voltage
5
Page 6
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
2.0
1.9
1.8
1.7
1.6
1.5
1.4
INPUT VSWR
1.3
1.2
1.1
1.0
TA = 25oC
= 6V
V
CC
.
ZO = 75Ω
ZO = 50Ω
12 468 2 468
10
FREQUENCY—MHz
2
10
Figure 11. Input VSWR vs Frequency
2.0
1.9
1.8
1.7
1.6
1.5
1.4
INPUT VSWR
1.3
1.2
1.1
1.0
T
= 25oC
amb
= 6V
V
CC
ZO = 75Ω
ZO = 50Ω
12 468 2 468
10
2
10
FREQUENCY—MHz
Figure 12. Output VSWR vs Frequency
3
10
SR00203
3
10
SR00205
10
–15
–20
ISOLATION—dB
–25
–30
12 468 2 468
10
ZO = 50Ω
= 25oC
T
A
V
= 6V
CC
2
10
FREQUENCY—MHz
Figure 14. Isolation vs Frequency (S12)
25
20
vcc = 6v
2
10
vcc = 5v
15
ISOLATION GAIN—dB
ZO = 75Ω
= 25oC
T
A
10
12 468 2 468
10
FREQUENCY—MHz
vcc = 8v
vcc = 7v
Figure 15. Insertion Gain vs Frequency (S21)
3
10
SR00204
3
10
SR00206
40
35
30
INPUT
2
10
OUTPUT
25
VCC = 6V
20
INPUT RETURN LOSS—dB
15
OUTPUT RETURN LOSS—dB
10
= 50Ω
Z
O
T
= 25oC
A
12 468 2 468
10
FREQUENCY—MHz
Figure 13. Input (S11) and Output (S22) Return Loss
vs Frequency
1992 Feb 25
3
10
SR00207
25
TA = –55oC
TA = 25oC
20
TA = 85oC
TA =
15
INSERTION GAIN—dB
10
10
ZO = 75Ω
= 6V
V
CC
12 468 2 468
125oC
2
10
FREQUENCY—MHz
3
10
SR00208
Figure 16. Insertion Gain vs Frequency (S21)
6
Page 7
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
THEORY OF OPERATION
The design is based on the use of multiple feedback loops to
provide wide-band gain together with good noise figure and terminal
impedance matches. Referring to the circuit schematic in Figure 17,
the gain is set primarily by the equation:
V
OUT
(RF1 RE1) R
V
IN
which is series-shunt feedback. There is also shunt-series feedback
due to R
impedances without the need for low value input shunting resistors
that would degrade the noise figure. For optimum noise
performance, R
possible, while R
The noise figure is given by the following equation:
and RE2 which aids in producing wide-band terminal
F2
and the base resistance of Q1 are kept as low as
E1
is maximized.
F2
NF 10Log
1
where I
R
The DC input voltage level VIN can be determined by the equation:
where R
at V
Under the above conditions, V
Level shifting is achieved by emitter-follower Q
which provide shunt feedback to the emitter of Q
of an emitter-follower buffer in this feedback loop essentially
=5.5mA, RE1=12Ω, rb=130Ω, KT/q=26mV at 25°C and
C1
=50 for a 50Ω system and 75 for a 75Ω system.
0
V
+(IC1+IC3) RE1(3)
IN=VBE1
=12Ω, VBE=0.8V, IC1=5mA and IC3=7mA (currents rated
E1
=6V).
CC
rb R
E1
KT
E1
2ql
C1
dB
R
O
is approximately equal to 1V .
IN
and diode Q4,
3
via RF1. The use
1
(1)
(2)
eliminates problems of shunt-feedback loading on the output. The
value of R
DC output voltage V
V
OUT=VCC
where VCC=6V, R2=225Ω, IC2=8mA and IC6=5mA.
From here, it can be seen that the output voltage is approximately
3.1V to give relatively equal positive and negative output swings.
Diode Q
R
to the base of Q1. The dual feedback loops stabilize the DC
F2
operating point of the amplifier.
The output stage is a Darlington pair (Q
the DC bias voltage on the input stage (Q
value, and also increases the feedback loop gain. Resistor R
optimizes the output VSWR (Voltage Standing Wave Ratio).
Inductors L
roughly 3nH. These improve the high-frequency impedance
matches at input and output by partially resonating with 0.5pF of pad
and package capacitance.
=140Ω is chosen to give the desired nominal gain. The
F1
–(IC2+IC6)R2,(4)
is included for bias purposes to allow direct coupling of
5
and L2 are bondwire and lead inductances which are
1
can be determined by:
OUT
and Q2) which increases
6
) to a more desirable
1
0
POWER DISSIPATION CONSIDERATIONS
When using the part at elevated temperature, the engineer should
consider the power dissipation capabilities of each package.
At the nominal supply voltage of 6V , the typical supply current is
25mA (32mA max). For operation at supply voltages other than 6V ,
see Figure 3 for I
inversely proportional to temperature and varies no more than 1mA
between 25°C and either temperature extreme. The change is 0.1%
per °C over the range.
The recommended operating temperature ranges are air-mount
specifications. Better heat-sinking benefits can be realized by
mounting the SO and N package bodies against the PC board
plane.
versus VCC curves. The supply current is
CC
1992 Feb 25
V
CC
Q6
R2
225
R3
140
R0
10 3nH
Q2
RE2
12
Q5
L2
V
OUT
SR00209
R1
650
Q3
L1
V
IN
3nH
Q1
RE1
12
Figure 17. Schematic Diagram
Q4
RF1
140
RF2
200
7
Page 8
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
PC BOARD MOUNTING
In order to realize satisfactory mounting of the NE5204A to a PC
board, certain techniques need to be utilized. The board must be
double-sided with copper and all pins must be soldered to their
respective areas (i.e., all GND and V
pins on the package). The
CC
power supply should be decoupled with a capacitor as close to the
V
pins as possible, and an RF choke should be inserted between
CC
the supply and the device. Caution should be exercised in the
connection of input and output pins. Standard microstrip should be
observed wherever possible. There should be no solder bumps or
burrs or any obstructions in the signal path to cause launching
problems. The path should be as straight as possible and lead
lengths as short as possible from the part to the cable connection.
Another important consideration is that the input and output should
be AC-coupled. This is because at V
=6V, the input is
CC
approximately at 1V while the output is at 3.1V . The output must be
decoupled into a low-impedance system, or the DC bias on the
output of the amplifier will be loaded down, causing loss of output
power. The easiest way to decouple the entire amplifier is by
soldering a high-frequency chip capacitor directly to the input and
output pins of the device. This circuit is shown in Figure 18. Follow
these recommendations to get the best frequency response and
noise immunity . The board design is as important as the integrated
circuit design itself.
SCATTERING PARAMETERS
The primary specifications for the NE5204A are listed as
S-parameters. S-parameters are measurements of incident and
reflected currents and voltages between the source, amplifier, and
load as well as transmission losses. The parameters for a two-port
network are defined in Figure 19.
V
CC
RF CHOKE
DECOUPLING
CAPACITOR
V
IN
AC
COUPLING
CAPACITOR
Figure 18. Circuit Schematic for
Coupling and Power Supply Decoupling
NE5204A
AC
COUPLING
CAPACITOR
V
OUT
SR00210
Actual S-parameter measurements using an HP network analyzer
(model 8505A) and an HP S-parameter tester (models 8503A/B) are
shown in Figure 20.
Values for the figures below are measured and specified in the data
sheet to ease adaptation and comparison of the NE/SA/SE5204A to
other high-frequency amplifiers.
The most important parameter is S
. It is defined as the square root
21
of the power gain, and, in decibels, is equal to voltage gain as
shown below:
Z
D=ZIN=ZOUT
P
IN
P
OUT
P
PI=V
for the NE/SA/SE5204A
2
V
IN
2
I
NE5204A
IN
Z
D
2
V
OUT
Z
D
2
V
IN
Z
D
2
V
P
Z
D
OUT
2
V
OUT
P
2
V
IN
OUT
Z
D
I
PI=Insertion Power Gain
VI=Insertion Voltage Gain
Measured value for the
NE/SA/SE5204A = |S
P
P
andV
OUT
I
I
|S21|2 100
P
IN
V
OUT
V
IN
21
P
2
|
= 100
S21 10
I
In decibels:
21
= S
2
= 20dB
= 20dB
21(dB)
= 20dB
P
=10 Log | S21|
I(dB)
V
= 20 Log S
I(dB)
∴ P
I(dB)
= V
I(dB)
Also measured on the same system are the respective voltage
standing wave ratios. These are shown in Figure 21. The VSWR
can be seen to be below 1.5 across the entire operational frequency
range.
Relationships exist between the input and output return losses and
the voltage standing wave ratios. These relationships are as follows:
1992 Feb 25
8
Page 9
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
POWER REFLECTED
S
21
S
11
S
12
S
22
S11 — INPUT RETURN LOSS
S12 — REVERSE TRANSMISSION LOSS
OSOLATION
S21 — FORWARD TRANSMISSION LOSS
OR INSERTION GAIN
S
— OUTPUT RETURN LOSS
22
S11 =
S
12
S
21
S
22
FROM INPUT PORT
POWER AVAILABLE FROM
GENERATOR AT INPUT PORT
REVERSE TRANSDUCER
=
= TRANSDUCER POWER GAIN
=
POWER GAIN
POWER REFLECTED
FROM OUTPUT PORT
POWER AVAILABLE FROM
GENERATOR AT OUTPUT PORT
a. Two-Port Network Defined b.
Figure 19.
SR00211
1992 Feb 25
9
Page 10
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
25
20
15
INSERTION GAIN—dB
ZO = 50Ω
= 25oC
T
10
A
12 468 2 468
10
FREQUENCY—MHz
a. Insertion Gain vs Frequency (S
10
–15
–20
ISOLATION—dB
–25
–30
12468 2 468
10
c. Isolation vs Frequency (S
40
35
30
25
VCC = 6V
20
INPUT RETURN LOSS—dB
15
OUTPUT RETURN LOSS—dB
10
e. Input (S
INPUT RETURN LOSS=S
S
dB=20 Log | S11|
11
= 50Ω
Z
O
T
= 25oC
A
12468 2 468
10
) and Output (S22) Return Loss
11
dB
11
OUTPUT RETURN LOSS=S22dB
S
dB=20 Log | S22|
22
INPUT VSWR=≤1.5
OUTPUT VSWR=≤1.5
50Ω System 75Ω System
vcc = 8v
vcc = 7v
vcc = 6v
vcc = 5v
2
10
ZO = 50Ω
= 25oC
T
A
VCC = 6V
2
10
FREQUENCY—MHz
OUTPUT
INPUT
2
10
FREQUENCY—MHz
) d. S12 Isolation vs Frequency
12
3
10
) b. Insertion Gain vs Frequency (S21)
21
3
10
3
10
25
20
vcc = 6v
15
ISOLATION GAIN—dB
ISOLATION—dB
INPUT RETURN LOSS—dB
ZO = 75Ω
= 25oC
T
A
10
12 468 2 468
10
FREQUENCY—MHz
10
–15
–20
–25
–30
12468 2 468
10
FREQUENCY—MHz
40
35
30
25
20
OUTPUT RETURN LOSS—dB
15
10
10
OUTPUT
INPUT
12468 2 468
FREQUENCY—MHz
vcc = 5v
2
10
ZO = 75Ω
= 25oC
T
A
VCC = 6V
2
10
VCC = 6V
Z
O
T
= 25oC
A
2
10
f. Input (S11) and Output (S22) Return Loss
vs Frequency
vs Frequency
Figure 20.
1dB from its low power value. The decrease is due to nonlinearities
in the amplifier, an indication of the point of transition between
small-signal operation and the large signal mode.
The saturated output power is a measure of the amplifier’s ability to
deliver power into an external load. It is the value of the amplifier’s
output power when the input is heavily overdriven. This includes the
sum of the power in all harmonics.
vcc = 7v
= 75Ω
vcc = 8v
3
10
3
10
3
10
SR00212
1DB GAIN COMPRESSION AND SA TURATED
OUTPUT POWER
The 1dB gain compression is a measurement of the output power
level where the small-signal insertion gain magnitude decreases
1992 Feb 25
INTERMODULATION INTERCEPT TESTS
The intermodulation intercept is an expression of the low level
linearity of the amplifier. The intermodulation ratio is the difference in
dB between the fundamental output signal level and the generated
distortion product level. The relationship between intercept and
10
Page 11
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
intermodulation ratio is illustrated in Figure 22, which shows product
output levels plotted versus the level of the fundamental output for
two equal strength output signals at different frequencies. The upper
line shows the fundamental output plotted against itself with a 1dB to
1dB slope. The second and third order products lie below the
fundamentals and exhibit a 2:1 and 3:1 slope, respectively.
The intercept point for either product is the intersection of the
extensions of the product curve with the fundamental output.
The intercept point is determined by measuring the intermodulation
ratio at a single output level and projecting along the appropriate
product slope to the point of intersection with the fundamental.
When the intercept point is known, the intermodulation ratio can be
determined by the reverse process. The second order IMR is equal
to the difference between the second order intercept and the
fundamental output level. The third order IMR is equal to twice the
difference between the third order intercept and the fundamental
output level. These are expressed as:
IP
IP3=P
where P
level fundamental output signals, IP
third order output intercepts in dBm, and IMR
+IMR
2=POUT
OUT
OUT
2
+IMR3/2
is the power level in dBm of each of a pair of equal
and IP3 are the second and
2
2
2.0
1.9
TA = 25oC
1.8
1.7
1.6
1.5
1.4
INPUT VSWR
1.3
1.2
1.1
1.0
12 468 2 468
10
V
CC
ZO = 75Ω
ZO = 50Ω
= 6V
.
10
FREQUENCY—MHz
2
and IMR3 are the
3
10
a. Input VSWR vs Frequency b. Output VSWR vs Frequency
Figure 21. Input/Output VSWR vs Frequency
second and third order intermodulation ratios in dB. The
intermodulation intercept is an indicator of intermodulation
performance only in the small signal operating range of the amplifier.
Above some output level which is below the 1dB compression point,
the active device moves into large-signal operation. At this point the
intermodulation products no longer follow the straight line output
slopes, and the intercept description is no longer valid. It is therefore
important to measure IP
and IP3 at output levels well below 1dB
2
compression. One must be careful, however, not to select too low
levels because the test equipment may not be able to recover the
signal from the noise. For the NE/SA5204A we have chosen an
output level of –10.5dBm with fundamental frequencies of 100.000
and 100.01MHz, respectively.
ADDITIONAL READING ON SCATTERING
PARAMETERS
For more information regarding S-parameters, please refer to
High-Frequency Amplifiers by Ralph S. Carson of the University of
Missouri, Rolla, Copyright 1985; published by John Wiley & Sons,
Inc.
“S-Parameter T echniques for Faster , More Accurate Network Design”,
HP App Note 95-1, Richard W. Anderson, 1967, HP Journal.
“S-Parameter Design”, HP App Note 154, 1972.
2.0
1.9
1.8
T
= 25oC
1.7
1.6
1.5
1.4
INPUT VSWR
1.3
1.2
1.1
1.0
amb
= 6V
V
CC
ZO = 75Ω
ZO = 50Ω
12 468 2 468
10
2
10
FREQUENCY—MHz
3
10
SR00213
1992 Feb 25
+30
THIRD ORDER
INTERCEPT POINT
+20
1dB
COMPRESSION POINT
+10
FUNDAMENTAL
0
dBm
-10
OUTPUT LEVEL
-20
-30
-40
RESPONSE
-60 -50 -40 -30 -20 -10 0 +10 +20 +30 +40
INPUT LEVEL dBm
2ND ORDER
INTERCEPT
2ND ORDER
RESPONSE
3RD ORDER
Figure 22.
11
POINT
RESPONSE
SR00214
Page 12
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
SO8: plastic small outline package; 8 leads; body width 3.9mm SOT96-1
1992 Feb 25
12
Page 13
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1
1992 Feb 25
13
Page 14
Philips Semiconductors Product specification
NE/SA5204AWide-band high-frequency amplifier
DEFINITIONS
Data Sheet Identification Product Status Definition
Objective Specification
Preliminary Specification
Product Specification
Formative or in Design
Preproduction Product
Full Production
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICA TIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation
register eligible circuits under the Semiconductor Chip Protection Act.
Copyright Philips Electronics North America Corporation 1993
All rights reserved. Printed in U.S.A.
1992 Feb 25
14
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