Datasheet NDS9948 Datasheet (Fairchild)

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Page 1

NDS9948

January 2010

NDS9948

Dual 60V P-Channel PowerTrench

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been opt imized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).

Applications

• Power management

• Load switch

• Battery protection

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

Drain-Source Voltage –60 V

DSS

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –2.3 A – Pulsed –10 PD

TJ, T

STG

Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b)

Operating and Storage Junction Temperature Range –55 to +175



MOSFET

=25

C unless otherwise noted

Features

• –2.3 A, –60 V R R

• Low gate charge (9nC typical)

• Fast switching speed

• High performance trench technology for extremely

DS(ON)

5 6 7 8

low R

• High power and current handling capability

= 250 mΩ @ VGS = –10 V

DS(ON)

= 500 mΩ @ VGS = –4.5 V

DS(ON)

3 2 1

±20

1.0

(Note 1c)

0.9

°C

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1c) (Note 1) 40

135

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

NDS9948 NDS9948 13’’ 12mm 2500 units

2010 Fairchild Semiconductor Corporation

°C/W °C/W °C/W

NDS9948 Rev B1(W)

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NDS9948

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2)

Drain-Source Avalanche Energy Si ngle Pulse, VDD=–54 V 15 mJ

DSS

IAR Drain-Source Avalanche Current

–10

Off Characteristics

Drain–Source Breakdown Voltage

DSS

∆BVDSS ∆T

DSS

GSSF

GSSR

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

= 0 V, ID = –250 µA

= –250 µA, Referenced to25°C

= –40 V, VGS = 0 V

= –40 V,VGS = 0 V TJ =–55°C

–60 V

–52

–2

–25

mV/°C

µA

On Characteristics (Note 2)

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

On–State Drain Current VGS = –10 V, VDS = –5 V –10 A

D(on)

= VGS, ID = –250 µA

= –250 µA, Referenced to25°C

VGS = –10 V, ID = –2.3 A

= –4.5 V, ID = –1.6 A

= –10 V,ID = –2.3A, TJ =125°C

gFS Forward Transconductance VDS = –10 V, ID = –2.3 A 5 S

–1 –1.5 –3 V

138 175 225

250 500 433

mV/°C

mΩ

Dynamic Characteristics

Input Capacitance 394 pF

iss

Output Capacitance 53 pF

oss

Reverse Transfer Capacitance

rss

= –30 V, V

f = 1.0 MHz

= 0 V,

23 pF

Switching Characteristics (Note 2)

Turn–On Delay Time 6 12 ns

d(on)

tr Turn–On Rise Time 9 18 ns t

Turn–Off Delay Time 16 29 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 9 13 nC Qgs Gate–Source Charge 1.4 nC Qgd Gate–Drain Charge

= –30 V, ID = –1 A,

= –10 V, R

= –30 V, ID = –2.3 A,

= –10 V

GEN

= 6 Ω

3 6 ns

1.7 nC

NDS9948 Rev B1(W)

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NDS9948

Electrical Characteristics (cont.) T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Di ode Forward Current –1.7 A V

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Drain–Source Diode Forward Voltage

Reverse Recovery Time

is guaranteed by design while R

θJC

a) 78°C/W when

θCA

mounted on a

0.5in2 pad of 2 oz copper

is determined by the user's board design. `

= 0 V, IS = –1.7 A(Note 2)

= 0 V, IF = –2.3A,

/dt = 100A/µs

b) 125°C/W when

mounted on a

0.02 in2 pad of 2 oz copper

–0.8 –1.2 V

c) 135°C/W when

mounted on a minimum pad.

NDS9948 Rev B1(W)

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Typical Characteristics

NDS9948

VGS = -10V

-6.0V

, DRAIN CURRENT (A)

-I

0123456

-4.5V

-4.0V

-3.5V

-V

, DRAIN TO SOURCE VOLTAGE (V)

-3.0V

1.8

VGS=-3.5V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

DRAIN-SOURCE ON-RESISTANCE

0.8 0246810

-4.0V

-4.5V

, DRAIN CURRENT (A)

-I

-6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

ID = -2.3A

1.8

= -10V

1.6

1.4

1.2

, NORMALIZED

DS(ON)

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

0.5

0.45

0.4

0.35

0.3

0.25

, ON-RESISTANCE (OHM)

0.2

TA = 25oC

DS(ON)

0.15

0.1 246810

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

-V

-10V

ID = -1A

Figure 3. On-Resistance Variation

withTemperature.

VDS = -5V

, DRAIN CURRENT (A)

-I

11.522.533.54

-V

, GATE TO SOURCE VOLTAGE (V)

TA = -55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS =0V

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

BODY DIODE FORWARD VOLTAGE (V)

-V

SD,

-55oC

with Source Current and Temperature.

NDS9948 Rev B1(W)

Page 5

Typical Characteristics

NDS9948

ID = -2.3A

, GATE-SOURCE VOLTAGE (V)

-V

0246810

, GATE CHARGE (nC)

VDS = -20V

-30V

-40V

600

500

400

300

200

CAPACITANCE (pF)

100

0 102030405060

OSS

RSS

-V

ISS

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

LIMIT

DS(ON)

VGS = -10V

SINGLE PULSE

, DRAIN CURRENT (A)

0.1

-I

= 135oC/W

= 25oC

0.01

0.1 1 10 100

, DRAIN-SOURCE VOLTAGE (V)

-V

10ms

100ms

10s

1ms

100

P(pk), PEAK TRANSIENT POWER (W)

0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

f = 1 MHz V

= 0 V

SINGLE PULSE

= 135°C/W

= 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

r(t), NORMALIZED EFFECTIV E TRANSIENT

THERMAL RESISTANCE

0.001

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

θJA

P(pk)

- TA = P * R

Duty Cycle, D = t

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending o n the circuit board design.

(t) = r(t) * R

= 135oC/W

θJA

(t)

θJA

/ t

NDS9948 Rev B1(W)

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TRADEMARKS

The following includes registered and unregistered trademarks and ser vice marks, owned by Fairchild Semiconductor and/or its global subsidia ries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™

® ®

FlashWriter FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

FETBench™

PDP SPM™ Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used herein:

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I46