Page 1
MDB6S / MDB8S / MDB10S
1A, MicroDIP, Single-Phase Bridge Rectifiers
Features
• Low Package Profile: 1.45 mm (max)
• Requires Only 35 mm
• High Surge Current Capability: 30A (max)
• Glass Passivated Junction Rectifiers
• UL Certification : E352360
2
of Board Space
+ -
MDB6S / MDB8S / MDB10S — 1A, MicroDIP, Single-Phase Bridge Rectifiers
January 2012
Micro DIP
Absolute Maximum Ratings T
Symbol Parameter
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
2
I
t
T
J
T
STG
* 60Hz sine wave, R-load, T
** 60Hz sine wave, Non-repetitive 1 cycle peak value, T
Maximum Repetitive Peak Reverse Voltage 600 800 1000 V
Maximum RMS Voltage 420 560 700 V
Maximum DC Blocking Voltage 600 800 1000 V
Average Rectified Forwa r d C urr en t * 1.0 A
Peak Forward Surge Current ** 30 A
2
I
t Rating for fusing (t<8.3ms)
Operating Junction Temperature Range -55 to +15 0 °C
Storage Temperature Range -55 to +150 °C
= 25°C on FR-4 PCB.
A
= 25°C unless otherwise noted
A
MDB6S MDB8S MDB10S
= 25°C.
J
Value
3.735 A
Thermal Characteristics*
Symbol Parameter Typ. Units
R
θJA
ψ
JL
* Device mounted on FR-4 PCB with board size = 76.2mm x 114.3mm (JESD51-3 standards)
Thermal Resistance, Junction-Ambient
- Measurement with Dual Dice
- Measurement with Single Die
Thermal Characterization, Junction to Lead
- Measured at Anode pin
- Measured at Cathode pin
250
150
57
15
Units
2
S
°C/W
°C/W
°C/W
°C/W
Electrical Characteristics T
= 25°C unless otherwise specified
A
Symbol Parameter Test condition Value Units
V
F
I
R
C
J
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MDB6S / MDB8S / MDB10S Rev. A1 1
Maximum Forward Voltage IF = 1A,
1.1 V
Pulse measurement, Per diode
Maximum Reverse Current @ V
RRM
,
10 μA
Pulse measurement, Per diode
Typical Junction Capacitance VR = 4V, f = 1MHz 10 pF
Page 2
Typical Performance Characteristics
MDB6S / MDB8S / MDB10S — 1A, MicroDIP, Single-Phase Bridge Rectifiers
1.4
1.2
TA=-55oC
1.0
[V]
F
0.8
0.6
TA=85oC
0.4
Forward Voltage, V
0.2
0.0
0.1 1 10
TA=25oC
TA=125oC
TA=150oC
Forward Current, IF [A]
Figure 1. Forward Voltage vs Forward Current
(Per diode)
100
90
80
[pF]
T
70
60
50
40
Total Capacita nc e, C
30
20
01234567
Reverse Voltage, VR [V]
f = 1M Hz
100000
TA=150oC
10000
1000
[nA]
R
100
10
Reverse Current, I
1
0.1
0 200 400 600 800 1000 1200
TA=125oC
TA=85oC
TA=25oC
TA=-55oC
Reverse Voltage, VR [V]
Figure 2. Reverse Current vs Reverse Voltage
(Per diode)
Figure 3. Total Capacitance
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MDB6S / MDB8S / MDB10S Rev. A1 2
Page 3
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Rev. I61
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