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MCT210
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
l UL recognised, File No. E91231
DESCRIPTION
The MCT210 optically coupled isolator
consists of an infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Isolation Voltage (5.3kV
l All electrical parameters 100% tested
l Custom electrical selections available
RMS
,7.5kV
PK
APPLICATIONS
l DC motor controllers
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
Dimensions in mm
1
2 5
3 4
7.8
7.4
0.3
9.6
8.4
0.5
1.54
8.8
8.4
2.54
6.4
6.2
4.3
4.1
0.5
3.3
)
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
6
OPTION SM
SURFACE MOUNT
1.2
0.6
10.2
9.5
1.4
0.9
OPTION G
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
5.08
max.
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-collector Voltage BV
Power Dissipation 160mW
CEO
CBO
ECO
30V
30V
6V
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91089-AAS/A2
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ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 40mA
Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V
Output Collector-emitter Breakdown (BV
( note 2 )
Collector-base Breakdown (BV
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 30 V IC = 1mA
CEO
) 30 V IC = 10µA
CBO
) 6 V IE = 100µA
ECO
) 50 nA VCE = 10V
CEO
Coupled Current Transfer Ratio (CTR) 50 % 3.2mA IF to 32mAI
0.4V V
CE
150 % 10mA IF , 5V V
Collector-emitter Saturation VoltageV
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
Rise Time t
Fall Time t
r
f
CE(SAT)
5300 V
ISO
7500 V
10
5x10
ISO
0.4 V 32mA IF , 16mA I
RMS
PK
Ω V
See note 1
See note 1
= 500V (note 1)
IO
4 µs VCC = 5V , fig 1
5 µs IC= 2mA, RL = 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
,
F
CE
C
RL = 100Ω
V
CC
Input
Output
Output
10%
90%
t
on
t
r
FIG 1
t
off
t
f
10%
90%
DB91089-AAS/A2
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Collector Power Dissipation vs. Ambient Temperature
200
(mW)
C
150
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
100
50
Collector power dissipation P
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
80
70
60
(mA)
F
50
40
30
20
Forward current I
10
1.6
1.2
0.8
Relative current transfer ratio
0.4
VCE = 0.4V
TA = 25°C
0
1 2 5 10 20 50
Forward current I
F
Current Transfer Ratio vs. Forward Current
320
280
VCE = 5V
TA = 25°C
240
200
160
120
80
Current transfer ratio CTR (%)
40
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
IF = 10mA
VCE = 5V
1.0
0.5
Relative current transfer ratio
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
0
1 2 5 10 20 50
Forward current IF (mA)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
(V)
0.56
CE(SAT)
0.48
0.40
IF = 32mA
IC = 16mA
0.32
0.24
0.16
0.08
0
Collector-emitter saturation voltage V
-30 0 25 50 75 100
Ambient temperature TA ( °C )
DB91089-AAS/A2
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