Datasheet L165 Datasheet (SGS Thomson Microelectronics)

L165

3A POWER OPERATIONAL AMPLIFIER

OUTPUT CURRENT UP TO 3A
LARGE COMMON-MODE AND DIFFERENTIAL

MODE RANGES
SOA PROTECTION
THERMAL PROTECTION
± 18V SUPPLY

Pentawatt

DESCRIPTION

The L165 is a monolithic integrated circuit in
Pentawatt® package, intended for use as power
operational amplifier in a wide range of applica­tions, including servo amplifiers and power sup­plies. The high gain and high output power
capability provide superiore performance wherever
an operational amplifier/power booster combina-

ORDERING NUMBER : L165V

tion is required.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

Supply voltage

s

V5 V4Upper power transistor V
V

V3Lower power transistor V

4

V

Input voltage V

i

V

Differential input voltage

j

Peak output current (internally limited) 3.5 A

I

o

P

Power dissipation at T

tot

, TjStorage and junction temperature -40 to 150

T

stg

case

CE
CE

= 90°C

± 18

36 V
36 V

s

± 15

20 W

®

°C

V

V

APPLIC ATION CIRCUIT S

October 1991

Figure 2. Unity gain configuration.Figure 1. Gain > 10.

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L165

PIN CON NECTION (top view)

SCHEMATIC DIAGRAM

THERMAL DATA

Symbol Parameter Value Unit

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R

th-j-case

Thermal resistance junction-case max 3

°C/W

ELECTRICAL CHARACT E RI STIC S (VS = ± 15 V, Tj = 25 °C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

L165

V

V

I

Supply Voltage

s

I

Quiescent Drain Current

d

I

Input Bias Current 0.2 1

b

Input Offset Voltage

os

Input Offset Current

os

SR Slew-rate G

V

Output Voltage Swing f = 1 kHz Ip = 0.3 A

o

R Input Resistance (pin 1)
G
e

Voltage Gain (open loop) 80 dB

v

Input Noise Voltage

N

Input Noise Current 100 pA

i

N

CMR Common-mode Rejection

SVR Supply Voltage Rejection

± 6

40 60 mA

V

= ± 18 V

s

± 2 ± 10

± 20 ± 200

= 10 8

v

G

= 1 (°)

v

f = 10 kHz I

f = 1 KHz

B = 10 to 10 000 Hz

R

≤ 10 KΩ

g

= 22 KΩ

R

g

V

= 0.5 V

f

ripple

ripple

= 100 Hz

rms

6

27

I

I

= 3 A

p

= 0.3 A

p

= 3 A

p

24
27

23

100 500

2

G

= 30 dB 70 dB

v

= 10 60 dB dB

G

v

dB Gv = 100 40 dB

± 18

V

µA

mV

nA

V/µs

V

V

pp

PP

KΩ

µV

Efficiency
I

T

Thermal Shut-down Case

sd

Temperature

f = 1 kHz
R

= 4 Ω

L

P

= 12 W 110

tot

= 6 W 130

P

tot

= 1.6 A; Po = 5W 70 %

I

p

= 3 A; Po = 18 W 60 %

p

°C

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L165

Figure 3. Open loop frequency response.

Figure 5. Large signal frequency
response.

Figure 4. Closed loop frequency respo nse
(circuit of figure 2).

Figure 6. Maximum output current vs.
voltage [VCE] across each output
transistor.

Figure 7. Safe operati ng area and collector
characteristics of the protected power
transistor.

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Figure 8. Maximum allowable power
dissipation vs. ambient temperature.

Figure 9. Bidirectional DC motor control with TTL/CMOS/µP compatible inputs.

Must be VS2 ≥ VS1 E1, E2 = logic inputs
V

= logic supply voltage

S1

L165

Figure 10. Motor current control circuit with external power transistors (I

D1 to D4 : VF ≤ 1.2 @ I = 4A
t

Note : The inputvolt age level is compatible with L291 (5-BI T D/ A c onverter ).
The transfer function is :

≤ 500 ns

rr

I

V

M

i

=

R4

Rx R3

motor

> 3.5A).

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L165

Figure 1 1. High current trackin g regulato r.

A : for ± 18 ≤ Vi ± 32
Note : V
2 V

B : for V

must be chosen in order to verify

z

≤ 36V

i-Vz

≤ ± 18V

i

Figure 12. Bidirectional speed control of DC
motor (Compensation networks not shown).

D1, D2 : VF ≤ 1.2V @ I = 2A
t

≤ 500 ns

rr

Figure 13. Split power supply.

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L165

Figure 14. Power sq uarewave oscillator with indepen dent adjustments for frequ ency and duty-cycle.

P1 : duty-cycle adjust
P2 : frequency adjust (f = 700 Hz with C1 = 10 nF, P2 = 100
KΩ, f = 25 Hz with C1 = 10 nF , P2 = 0)

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L165

PENTAWATT PACKAGE MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110

D1 1.2 1.35 0.047 0.053

E 0.35 0.55 0.014 0.022
F 0.8 1.05 0.031 0.041

F1 1 1.4 0.039 0.055

G 3.4 0.126 0.134 0.142
G1 6.8 0.260 0.268 0.276
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409

L 17.85 0.703

L1 15.75 0.620
L2 21.4 0.843
L3 22.5 0.886
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260

M 4.5 0.177

M1 4 0.157

Dia 3.65 3.85 0.144 0.152

mm inch

A

H3

L

E

L1

G

MM1

G1

C

D1

L5

D

L2
L3

Dia.

L7

F1

F

H2

L6

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L165

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement o f patents or other rights of third parties which may result from its use. No
license is granted by implicat ion o r otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificat ions mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectroni cs products are not authorized for use as critical c omponents in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.

© 1994 SGS-THOMSON Microelectronics - A ll Rights Reserved

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