Datasheet KSD794, KSD794A Datasheet (Fairchild Semiconductor)

KSD794/794A

Audio Frequency Power Amplifier

• Complement to KSB744/KSB744A

KSD794/794A

1

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

VEBO IC ICP IB PC

P

C

T

J

T

STG

* PW≤10ms, Duty Cycle≤50%

Collector- Base Voltage 70 V Collector-Emitter Voltage : KSD794

Emitter- Base Voltage 5 V Collector Current (DC) 3 A *Collector Current (Pulse) 5 A Base Current (DC) 0.6 A Collector Dissipation (Ta=25°C) 1 W Collector Dissipation (TC=25°C) 10 W Junction T emperature 150 °C Storage Temperature - 55 ~ 150 °C

Electrical Characteristics

Symbol Parameter Test Condition Min. Typ. Max. Units

I

CBO IEBO hFE1

h

FE2

(Sat) * Collector-Emitter Saturation Voltage IC =1.5A, IB = 0.15A 0.3 2 V

V

CE

(Sat) * Base-Em itter Saturation Voltage IC =1.5A, IB = 0.15A 0.8 2 V

V

BE

f

T

C

ob

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pu lsed

Collector Cut-off Current V Emitter Cut-off Current V * DC Current Gain V

Current Gain Bandwidth Product V Output Capacitance V

TC=25°C unless otherwise noted

: KSD794A

TC=25°C unless otherwise noted

= 45V, IE = 0 1 µA

CB

= 3V, IC = 0 1 µA

EB

= 5V, IC = 20mA

CE

= 5V, IC = 0.5A

V

CE

= 5V, IE = 0.1A 60 MHz

CE

= 10V, IE = 0, f = 1MHz 40 pF

CB

30 60

45 60

70

100 320

V V

hFE Classificntion

Classification R O Y

h

FE2

60 ~ 120 100 ~ 200 160 ~ 320

Typical Characteristics

KSD794/794A

2.0

IB = 20mA

1.6

IB = 18mA

IB = 16mA

1.2

IB = 14mA

IB = 12mA

IB = 10mA

0.8

IB = 8mA

IB = 6mA

[A], COLLECTOR CURRENT

0.4

C

I

0.0 0 1020304050

IB = 4mA

IB = 2mA

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

10

1

0.1

(sat)[V], SATURATION VOLTAGE

CE

(sat), V

BE

V

0.01 1E-3 0.01 0.1 1 10

VBE(sat)

VCE(sat)

IC[A], COLLECTOR CURRENT

IC = 10 I

1000

VCE = 5V

100

, DC CURRENT GAIN

FE

h

10

1E-3 0.01 0.1 1 10

IC[A], COLLECTOR CURRENT

1000

B

100

[pF], CAPACITANCE

ob

C

10

110100

IE=0 f=1MHz

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

100

10

1

0.01 0.1 1

(MHz), CURRENT GAIN BANDWIDTH PRODUCT

T

f

IC[A], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area

Figure 4. Collector Output Capacitance

10ms

PW=100us

1ms

DC

S/b Limited

D794

MAX.

CEO

V

D794A

Rev. A1, June 2001

VCE = 5V

10

IC(Pulse) MAX.

IC(DC) MAX.

1

Dissipation Limited

0.1

[A], COLLECTOR CURRENT

C

I

0.01 1 10 100

VCE[V], COLLECTOR-EMITTER VOLTAGE

KSD794/794A

Typical Characteristics

160

140

120

100

DERATING

C

80

60

dT(%), I

40

20

0

0 25 50 75 100 125 150 175 200

TC[oC], CASE TEMPERATURE

S/b Limited

Dissipation Limited

(Continued)

16

14

12

10

8

6

4

[W], POWER DISSIPATION

C

P

2

0

0 25 50 75 100 125 150 175

TC[oC], CASE TEMPERATURE

Figure 7. Derating Curve Of Safe Operating Areas Figure 8. Power Derating

Rev. A1, June 2001

Package Demensions

KSD794/794A

TO-126

±0.10

3.90

ø3.20

0.75

1.60

0.75

2.28TYP

[2.28±0.20]

±0.10

8.00

#1

±0.30

2.28TYP

[2.28±0.20]

14.20MAX

±0.30

13.06

±0.20

11.00

(1.00)

±0.20

16.10

0.50

3.25

(0.50)

1.75

+0.10 –0.05

±0.20

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

CEx™

A

Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

STAR*POWER is used under license

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™

®

OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™

STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™

®

UltraFET VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.