Page 1
KSC5321F
High Voltage and High Reliability
• High speed Switching
• Wide Safe Operating Area
KSC5321F
1
1.Base 2.Collector 3.Emitter
TO-220F
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
Collector-Base Voltage 800 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 7 V
Collector Current (DC) 5 A
*Collector Current (Pulse) 10 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Power Dissipation(Tc=25) 40 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Thermal Characteristics
Symbol Characteristics Rating Unit
R
θjc
R
θja
Thermal Resistance Junction to Case 3.1 °C/W
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
Junction to Ambient 62.5
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
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KSC5321F
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.0 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.5 V
V
BE
f
T
C
ob
C
ib
t
ON
t
STG
t
F
t
ON
t
STG
t
F
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 - - V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 - - V
Emitter-Base Breakdown Voltage IC =1mA, IC = 0 7 - - V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
= 800V, IE = 0 - - 10 µA
CB
= 7V, IC = 0 - - 10 µA
EB
= 5V, IC = 0.6A
CE
= 5V, IC = 3A
V
CE
15
8
-
-
40
-
Current Gain Bandwidth Product VCE= 10V, IC = 0.6A 14 - MHz
Output Capacitance V
Input Capacitance V
Turn On Time V
Storage Time - 6.5 µs
Fall Time - - 0.3 µs
Turn On Time V
Storage Time - - 3.0 µs
Fall Time - - 0.3 µs
= 10V, IE = 0, f = 1M Hz - 65 100 pF
CB
= 7V , IC = 0 , f = 1 M H z - 1400 2000 pF
EB
= 250V, IC = 1A
CC
I
= -IB2 = 0.2A
B1
= 250Ω
R
L
= 250V, IC = 4A
CC
I
= 0.8A, IB2 = -1.6A
B1
= 125Ω
R
L
-- 0.5µs
-- 0.5µs
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Page 3
Typical Characteristics
KSC5321F
5
= 700mA
I
4
3
2
[A], COLLECTOR CURRENT
C
1
I
0
B
0246810
VCE[V], COLLECTOR-EMITTER V OLTAG E
= 600mA
I
B
= 500mA
I
B
I
= 400mA
B
= 300mA
I
B
= 200mA
I
B
= 100mA
I
B
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
VBE(sat)
IC = 5 I
B
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
VCE(sat)
[pF], CAPACITANCE
C
1000
100
10
ob
VCE = 5V
f = 1MHz
= 0
I
E
(sat), V
BE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
1
s], TIME
µ
[
F
, t
STG
, t
0.1
ON
t
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
t
STG
t
ON
t
F
Figure 5. Switching Time Figure 6. Safe Operating Area
1
1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAG E
Figure 4. Collector Output Capacitance
Pulse
DC
50µs
100
µ
s
1ms
10ms
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
Page 4
Typical Characteristics
(Continued)
KSC5321F
100
10
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
10 100 1000 10000
V
[V], COLLECTOR-EMITTER VOLTAGE
CE
IB2 = -1A
L = 200
80
µ
H
60
40
20
[W], POWER DISSIPATION
C
P
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
Page 5
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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