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KSC5305D
KSC5305D
High Voltage High Speed Power Switch
Application
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time
spread even though corner spirit product
• Low base drive requirement
Equivalent Circuit
B
C
1
1.Base 2.Collector 3.Emitter
E
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
I
I
P
T
T
CBO
CEO
EBO
C
CP
B
BP
C
J
STG
Collector Base Voltage 800 V
Collector Emitter Voltage 400 V
Emitter Base Voltage 12 V
Collector Current (DC) 5 A
*Collector Current (Pulse) 10 A
Base Current (DC) 2 A
*Base Current (Pulse) 4 A
Power Dissipation(TC=25°C) 75 W
Junction T emperature 150 °C
Storage Temperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
TO-220
Thermal Characteristics
Symbol Characteristics Rating Unit
R
θjc
R
θja
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Thermal Resistance Junction to Case 1.65 °C/W
TC=25°C unless otherwise noted
Junction to Ambient 62.5
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KSC5305D
Electrical Characteristics T
=25°C unless otherwise noted
C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A
V
CE
V
(sat) Ba se-E mitter Sat uration Voltage IC=0.8A, IB=0.08A
BE
C
ob
t
ON
t
STG
t
F
t
STG
t
F
V
F
t
rr
*Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10%
Collector-Base Breakdown Voltage IC=1mA, IE=0 800 - - V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 - - V
Emitter Cut-off Cu rr en t IE=1mA, IC=0 12 - - V
Collector Cut-off Current VCB=500V, IE=0 - - 10 µA
Emitter Cut-off Cu rr en t V
DC Current Gain VCE=1V, IC=0.8A
= 9V , IC = 0 - - 10 µA
EB
=1V,IC=2A
V
CE
I
=2A, IB=0.4A
C
=2A, IB=0.4A
I
C
22
8
-
-
-
-
-
-
-
-
-
-
-
-
0.4
0.5
1.0
1.0
Output Capacitance VCB = 10V, f=1MHz - - 75 pF
Turn ON Time VCC=300V, IC =2A
= 0.4A, IB2=-1A
I
Storage Time - - 2 µs
Fall Time - - 0.2 µs
B1
R
= 150Ω
L
Storage Time VCC=15V,VZ=300V
= 2A,I
I
Fall Time - - 150 ns
C
I
= -0.4A, LC=200µH
B2
B1
= 0.4A
Diode Forward Voltage IF = 1A
= 2A
I
* Reverse recovery time
(di/dt = 10A/µs)
F
IF = 0.4A
= 1A
I
F
I
= 2A
F
- - 150 ns
- - 2.25 µs
-
-
-
-
-
800
1.4
1.9
-
1.5
-
1.6
-
-
-
V
V
V
V
V
V
ns
µs
µs
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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Typical Characteristics
KSC5305D
5
4
3
2
[A], COLLECTOR CURRENT
1
C
I
0
012345678910
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 500mA
IB = 450mA
IB = 400mA
IB = 350mA
IB = 300mA
IB = 250mA
IB = 200mA
IB = 150mA
IB = 100mA
IB = 50mA
IB = 0
100
Ta = 125oC
25oC
-25oC
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic Figure 2. DC current Gain
100
Ta = 125oC
25oC
-20oC
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.01 0.1 1 10
VBE(sat)
VCE(sat)
IC[A], COLLECTOR CURRENT
VCE = 1V
IC = 10 I
B
Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage
©2001 Fairchild Semiconductor Corporation
Ta = 125oC
-20oC
IC = 5I
25oC
Base-Emitter Saturation Voltage
B
10
1
-20oC
25oC
[V], SATURATION VOLTAGE
BE
V
0.1
0.01 0.1 1 10
Ta = 125oC
IC[A], COLLECTOR CURRENT
IC = 5I
B
Rev. A1, June 2001
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Typical Characteristics
(Continued)
KSC5305D
10
VCC = 300V
I
= 5IB1 = -2.5I
C
t
1
[µs], TIME
F
, t
STG
0.1
t
0.01
0.1 1 10
STG
t
F
IC[A], COLLECTOR CURRENT
Figure 7. Switching Time Figure 8. Collector Output Capacitance
1.6
1.4
1.2
1000
f = 1MHz
B2
100
10
[pF], CAPACITANCE
ob
C
1
110100
VCB[V], COLLECTOR-BASE VOLTAGE
10
1
1.0
[V], FORWARD DIODE VOLTAGE
F
trr[µs], REVERSE RECOVERY TIME
0.8
1.0 1.5 2.0
If[A], FORWARD CURRENT
V
0.1
0.01 0.1 1 10
IF[A], FORWARD DIODE CURRENT
Figure 9. Reverse Recovery Time Figure 10. Forward Diode Voltage
100
10
10µs
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
10 100 1000
DC
5ms
1ms
VCE[V], COLLECTOR-EMITTER VOLTAGE
1µs
100
80
60
40
20
[W], POWER DISSIPATION
C
P
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Figure 11. Safe Operating Area Figure 12. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Page 5
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
KSC5305D
±0.20
13.08
(1.00)
1.27
2.54TYP
±0.20
[2.54
±0.10
]
10.00
±0.20
1.52
±0.10
0.80
2.54TYP
[2.54
±0.10
±0.20
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
A
CEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
®
UltraFET
VCX™
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H3
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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