Datasheet KGF1531 Datasheet (OKI)

E2Q0020-38-71

This version: Jul. 1998

Previous version: Jan. 1998

KGF1531¡ electronic components

¡ electronic components

KGF1531

Small-Signal Amplifier

GENERAL DESCRIPTION

The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L-band frequencies that features low voltage operation, low current operation, high conversion gain, and low distortion. The KGF1531 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external impedance-matching circuits are also required. Because of the high 3rd-order intercept point, the KGF1531 is ideal as a small-signal receiving mixer for L-band personal handy phones, such as digital keying cordless phones that require low intermodulation properties.

FEATURES

• Low voltage and low current operation: 3 V, 8 mA (max.)

• Specifications guaranteed as the mixer operation to a fixed matching circuits for 3 V, 1.9 GHz

• High conversion gain: 12 dB (typ.) at 1.9 GHz

• Low distortion: 3rd-order intercept point = 12.5 dBm (typ.) at 1.9 GHz

• Self-bias circuit configuration with built-in source capacitor

• Package: 4PSOP

PACKAGE DIMENSIONS

1.8±0.1

0.85±0.05

+0.1

0.6

–0.05

3.0±0.2

1.5±0.15

1.9±0.1

2.8±0.15

0.4

+0.1 –0.05

1.1±0.15

0.36 0.74

+0.03

0.125

–0

(Unit: mm)

0.3 MIN

0 to 0.15

Package material

Lead frame material

Pin treatment

Solder plate thickness

Epoxy resin

42 alloy

Solder plating

5 mm or more

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MARKING

(4) (3)

X

XL

KGF1531¡ electronic components

CIRCUIT

(1)

G2(2)

G1(1)

(2)

NUMERICAL

PRODUCT TYPE

D(3)

GND(4)

LOT NUMBER

(1) Gate1 (2) Gate2 (3) Drain (4) GND

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ABSOLUTE MAXIMUM RATINGS

KGF1531¡ electronic components

Item

Drain-source voltage

Gate-source voltage

Drain current I

Total power dissipation

Channel temperature

Storage temperature T

Symbol Condition Max.Unit

V

DS

V

GS

DS

P

tot

T

ch

stg

Ta = 25°C

V

Ta = 25°C 50mA —

Ta = 25°C

—

mW

°C

— 125°C

Min.

—

–3.0

—

–45

4.0

0.4

200

150

ELECTRICAL CHARACTERISTICS

(Ta = 25°C)

Item

Gate-source leakage current 30mA—VGS = –3 V —

Gate-drain leakage current 30mA—V

Drain-source leakage current 30mA—VDS = 3 V, V

Drain current —mA 15VDS = 3 V, VGS = 0 V 25

Operating current 8.0mA —(*1), P

Gate-source cut-off voltage –0.6V –1.4VDS = 3 V, IDS = 100 mA—

Transconductance —mS 23VDS = 3 V, IDS = 6 mA 30

Conversion gain G

Output power —dBm

L-I

Third-order intercept point IP

Symbol Condition Max.Unit

I

GSS

I

GDO

I

DS(off)

I

DSS

I

D

V

GS(off)

g

m

C

P

O1

ISOPort to port Isolation —dB —(*1), P

3

= –6 V —

GD(1,2)

= –2 V —

GS(1,2)

= –20 dBm 6.0

IN

= –20 dBm

RF

dB

(*1)

= –20 dBm 22R-I

RF

dBm —— 12.5(*2), f2 = 1.901 GHz

Min.

—

0

Typ.

5.0Noise figure F (*1) dB

1.0

15L-R

28

—

—10 12(*1), P

*1 Self-bias condition: V

= 3 V ± 0.3 V, V

DD

G(1,2)

= 0 V, f

= 1.9 GHz, f

RF

= 1.65 GHz, P

LO

= 0 dBm

LO

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RF CHARACTERISTICS

KGF1531¡ electronic components

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KGF1531¡ electronic components

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Typical S Parameters

V

= 3 V, V

DD

Freq(MHz)

MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)

100.0 1.002 –2.06 0.485 –156.45 0.001 134.30 0.973 –1.54

200.0 1.006 –4.21 0.660 –163.21 0.001 89.30 0.963 –2.43

300.0 1.003 –6.32 0.735 –171.52 0.002 49.34 0.959 –3.20

400.0 1.003 –8.72 0.777 –178.89 0.004 67.00 0.954 –4.02

500.0

600.0

700.0

800.0

900.0

1000.0

1100.0

1200.0

1300.0

1400.0

1500.0

1600.0

1700.0

1800.0

1900.0

2000.0

2100.0

2200.0

2300.0

2400.0

2500.0

2600.0

2700.0

2800.0

2900.0

3000.0

1.005

0.999

0.996

0.995

0.992

0.987

0.983

0.979

0.977

0.972

0.970

0.963

0.959

0.953

0.947

0.940

0.922

0.927

0.925

0.913

0.900

0.891

0.880

0.874

0.863

0.851

–10.85

–13.27

–15.36

–17.66

–19.96

–22.12

–24.16

–26.53

–28.56

–31.19

–33.26

–35.49

–37.73

–40.11

–42.58

–44.82

–47.03

–49.42

–51.84

–54.35

–57.14

–59.49

–62.22

–64.94

–66.98

–70.00

0.804

0.821

0.824

0.838

0.854

0.858

0.868

0.882

0.894

0.906

0.921

0.933

0.945

0.967

0.981

0.999

1.017

1.029

1.064

1.081

1.091

1.121

1.152

1.196

1.227

1.277

175.03

170.22

164.84

160.75

156.05

152.38

148.70

144.57

141.09

137.65

133.84

130.62

127.43

123.66

120.52

116.72

112.95

110.02

106.74

103.70

99.12

96.98

93.75

90.37

87.35

83.46

0.004

0.003

0.005

0.004

0.005

0.006

0.004

0.003

0.007

0.004

0.006

0.005

0.006

0.009

0.012

0.013

0.015

0.021

76.91

77.54

61.41

76.89

59.09

62.64

62.28

67.53

71.94

88.94

107.44

76.87

74.93

106.06

104.31

128.87

106.36

115.80

153.54

152.18

137.58

146.84

150.18

151.42

158.84

149.86

= 0 V, ID = 6.13 mA

G2

0.952

0.953

0.950

0.947

0.950

0.947

0.949

0.948

0.951

0.950

0.948

0.947

0.948

0.949

0.948

0.949

0.952

0.957

0.950

0.957

0.955

KGF1531¡ electronic components

–4.71

–5.26

–6.06

–6.90

–7.42

–8.21

–8.92

–9.94

–10.48

–11.45

–12.14

–13.12

–13.80

–14.62

–15.36

–16.33

–17.37

–17.95

–18.82

–19.59

–20.37

–21.07

–22.18

–22.78

–24.27

–24.83

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Typical S Parameters

V

DD

= 3 V, V

= 0 V, ID = 6.13 mA

G2

Frequency : 0.5 to 3.0 GHz

Z0 = 50 W

KGF1531¡ electronic components

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Test Circuit and Bias Configuration for KGF1531

KGF1531¡ electronic components

C

2

T

7

R

C

LO

G2

C

T

5

T

6

(2)

KGF1531

(3)

T

RF

(1)

2

T

3

T

4

C

1

(4)

T

11

T5: Z0 = 75 W, E = 24 deg T

: Z0 = 100 W, E = 72 deg

6

T

: Z0 = 100 W, E = 5 deg

11

= 1000 pF, C

F(Feed through)

C

3

T

C

1

R

G1

T1: Z0 = 75 W, E = 25 deg T

: Z0 = 100 W, E = 2 deg

2

T

: Z0 = 100 W, E = 68 deg

3

T

= T7: Z0 = 100 W, E = 10 deg

4

L

= 60 nH, C1 = 1.15 pF, C2 = 1.30 pF, C3 = 2.50 pF, C4 = 18.0 pF

1

C

C(DC Block)

RFC = 60 nH, R

= 1000 pF, C

= RG2 = 1000 W

G1

B(By-pass)

L

8

1

= 1000 pF

C

B

T

12

C

T

9

C

4

RFC

C

B

C

10

C

F

f = 1.9GHz

T8: Z0 = 100 W, E = 5 deg T

: Z0 = 100 W, E = 65 deg

9

T

: Z0 = 75 W, E = 21 deg

10

T

: Z0 = 75 W, E = 40 deg

12

IF

V

DD

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