Datasheet IRF 9540NSPbF Datasheet

PD - 96030

IRF9540NSPbF

IRF9540NLPbF

HEXFET® Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Some Parameters are Different from

G

IRF9540NS/L

l P-Channel
l Lead-Free

Description

D

Features of this design are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These fea­tures combine to make this design an extremely
efficient and reliable device for use in a wide
variety of other applications.

D2Pak

IRF9540NSPbF

GDS

Gate Drain Source

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C

I

@ TC = 100°C

D

I

DM

PD @TA = 25°C

P

@TC = 25°C

D

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt

T

J

T

STG

Continuous Drain Current, V

Continuous Drain Current, VGS @ -10V

Pulsed Drain Current

Maximum Power Dissipation W

Maximum Power Dissipation

Linear Derating Factor W/°C

Gate-to-Source Voltage V

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and °C

Storage Temperature Range

Soldering Temperature, for 10 seconds

c

c

@ -10V A

GS

d

c

e

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case –––

Junction-to-Ambient (PCB Mount, steady state)

g

www.irf.com 1

D

S

S

D

G

V

R

DS(on)

DSS

ID = -23A

D

IRF9540NLPbF

Max.

-23

-14

-92

3.1

110

0.9

± 20

84

-14

11

-13

-55 to + 150

300 (1.6mm from case )

1.1

––– 40

= -100V

= 117mΩ

S

D

G

TO-262

mJ

A

mJ

V/ns

°C/W

09/30/05

IRF9540NS/LPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

∆ΒV

DSS

R

DS(on)

V

GS(th)

gfs Forward Transconductance 5.6 ––– ––– S

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Drain-to-Source Breakdown Voltage -100 ––– ––– V

/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C

Static Drain-to-Source On-Resistance ––– ––– 117

Gate Threshold Voltage -2.0 ––– -4.0 V

Drain-to-Source Leakage Current ––– ––– -50 µA

––– ––– -250

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 73 110 nC

Gate-to-Source Charge ––– 13 20

Gate-to-Drain ("Miller") Charge ––– 38 57

Turn-On Delay Time ––– 13 ––– ns

Rise Time ––– 64 –––

Turn-Off Delay Time ––– 40 –––

Fall Time ––– 45 –––

VGS = 0V, ID = -250µA

Reference to 25°C, I

mΩ

V

= -10V, ID = -14A

GS

VDS = VGS, ID = -250µA

= -50V, ID = -14A

V

DS

= -100V, VGS = 0V

V

DS

V

= -80V, VGS = 0V, TJ = 125°C

DS

= -20V

V

GS

= 20V

V

GS

= -14A

I

D

= -80V

V

DS

= -10V

V

GS

V

= -50V

DD

= -14A

I

D

= 5.1Ω

R

G

V

= -10V

GS

Internal Drain Inductance ––– 4.5 ––– nH Between lead,

6mm (0.25in.)

Internal Source Inductance ––– 7.5 ––– from package

and center of die contact

Input Capacitance ––– 1450 ––– pF

Output Capacitance ––– 430 –––

Reverse Transfer Capacitance ––– 230 –––

= 0V

V

GS

= -25V

V

DS

ƒ = 1.0MHz, See Fig. 5

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– -23

(Body Diode) A

Pulsed Source Current ––– ––– -92

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

c

––– ––– -1.6 V

––– 140 210 ns

Reverse Recovery Charge ––– 890 1340 nC

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

MOSFET symbol

showing the

integral reverse

p-n junction diode.
TJ = 25°C, IS = -14A, VGS = 0V

TJ = 25°C, IF = -14A, VDD = -25V

di/dt = -100A/µs

Conditions

= -1mA

D

f

f

f

Conditions

f

f

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11)

 Starting T

RG = 25Ω, I

 I

SD

= 25°C, L = 0.88mH

J

= -14A. (See Figure 12)

AS

≤ -14A, di/dt ≤ -620A/µs, V

DD

≤ V

(BR)DSS

,

 Pulse width ≤ 300µs; duty cycle ≤ 2%.
 When mounted on 1" square PCB (FR-4or G-10

Material). For recommended footprint and soldering
techniques refer to application note #AN-994.

TJ ≤ 150°C.

2 www.irf.com

IRF9540NS/LPbF

1000

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

-

TOP -15V

100

BOTTOM -4.5V

10

1

VGS

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

-4.5V

≤60µs PULSE WIDTH

Tj = 25°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

100

TJ = 25°C

)
A

(

t
n
e

r

r

10

u
C
e

c

r
u
o
S

­o

t

­n

i

1

a

r
D

,

D

I

-

V

≤

TJ = 150°C

= -50V

DS

60µs PULSE WIDTH

0.1
2 4 6 8 10 12 14

-VGS, Gate-to-Source Voltage (V)

1000

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

-

TOP -15V

100

BOTTOM -4.5V

10

1

VGS

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

-4.5V

≤60µs PULSE WIDTH

Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

e
c
n
a

t
s

i
s
e

R
n
O
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

)
n
o

(
S
D

R

ID = -14A

V

= -10V

GS

1.5

)
d
e
z

i

l
a

m

r
o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

vs. Temperature

www.irf.com 3

IRF9540NS/LPbF

)
F
p

(
e
c
n
a

t

i
c
a
p
a

C
,

C

10000

1000

100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

= C

gs

gd

ds

C

C

1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

100

)
A

(
t
n
e

r

r
u

C
n

i
a

r
D
e

s

r
e
v
e

R
,

D
S

I

-

TJ = 150°C

10

TJ = 25°C

1

0.1

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

-VSD, Source-to-Drain Voltage (V)

+ Cgd, C

+ C

gd

C

iss

C

oss

C

rss

SHORTED

ds

V

GS

= 0V

20

ID= -14A

)
V

(

16

e
g
a

t

l
o
V

e

12

c

r
u
o
S

­o

t

-

8

e

t
a

G
,

S
G

4

V

-

0

0 20406080100120

QG, Total Gate Charge (nC)

VDS= -80V

VDS= -50V

VDS= -20V

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000

)
A

(
t
n

100

e

r

r
u

C
e

c

r
u
o

10

S

­o

t

­n

i
a

r
D

1

,

D

I

-

Tc = 25°C
Tj = 150°C
Single Pulse

0.1
1 10 100 1000

OPERATION IN THIS AREA
LIMITED BY RDS(on)

-V

, Drain-toSource Voltage (V)

DS

100µsec

1msec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

24

C

20

)
A

(
t

16

n
e

r

r
u

C

12

n

i
a

r
D

,

8

D

I

-

4

0

25 50 75 100 125 150

TC , Case Temperature (°C)

IRF9540NS/LPbF

R

D.U.T.

D

t

d(off)tf

-

+

V

DS

V

GS

R

G

-10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

t

d(on)tr

V

GS

10%

90%

V

DS

V

DD

Fig 9. Maximum Drain Current vs.

Fig 10b. Switching Time Waveforms

Case Temperature

10

)

1

C
J
h

t
Z
(

e
s
n
o
p
s
e

R
l
a

m

r
e
h
T

0.001

D = 0.50

0.20

R

R

0.1

0.01

0.10

0.05

0.02

0.01

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

1

R

1

SINGLE PULSE
( THERMAL RESPONSE )

1E-006 1E-005 0.0001 0.001 0.01 0.1

R

2

3

R

2

τ

2

τ

2

Ri (°C/W)

R

3

τ

0.1737838 0.0000610

τ

3

τ

0.4335992 0.0019590

3

0.4921007 0.0260060

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

τi (sec)

www.irf.com 5

IRF9540NS/LPbF

(BR)

A

L

D.U.T

I

AS

0.01

p

DRIVER

Ω

15V

V

DD

R

V

G

-20V

DS

t

Fig 12a. Unclamped Inductive Test Circuit

I

AS

t

p

V

DSS

350

)
J

m

(

300

y
g

r
e
n
E

250

e
h
c
n
a

200

l
a
v
A

e

150

s

l
u
P

e

l

100

g
n

i
S
,

50

S
A

E

TOP -6.7A

BOTTOM -14A

0

25 50 75 100 125 150

Starting TJ , Junction Temperature (°C)

Fig 13. Maximum Avalanche Energy

vs. Drain Current

I

D

-9.6A

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

Q

G

-10V

Q

GS

V

G

Q

GD

Charge

Fig 14a. Basic Gate Charge Waveform

12V

V

GS

Fig 14b. Gate Charge Test Circuit

50KΩ

.2µF

.3µF

-3mA

Current Sampling Resistors

­V

+

D.U.T.

I

G

I

D

6 www.irf.com

DS

IRF9540NS/LPbF

Peak Diode Recovery dv/dt Test Circuit

D.U.T*

+



-



R

G

V

GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-



-

• dv/dt controlled by R

+

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

P. W .

D =

Period

+

V

DD

-

VGS=10V

[ ] ***

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

[ ]

I

[ ]

SD

Fig 15. For P-Channel HEXFETS

www.irf.com 7

IRF9540NS/LPbF

2

D

Pak Package Outline

Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information

THIS IS AN IRF530S WIT H

LOT CODE 8024
AS S EMBLE D ON WW 02, 2000
IN THE ASSEMBLY LINE "L"

INTER NAT IONAL

RECTIFIER

LOGO

ASSEMBLY
LOT CODE

F530S

OR

INTERNAT IONAL

RECTIFIE R

LOGO

ASSEMBLY
LOT CODE

F530S

PART NUMBER

DATE CODE
P = DE S IGN AT ES L E AD - F R EE

PRODUCT (OPT IONAL)
YEAR 0 = 2000
WE E K 0 2
A = ASSEMBLY SITE CODE

8 www.irf.com

PART NUMBER

DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

IRF9540NS/LPbF

TO-262 Part Marking Information

EXAMPLE:

T HIS IS AN I RL 3103L
LOT CODE 1789
ASS EMBL ED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"

Note: "P" in ass embl y l ine
pos i ti on i ndi cates "L ead-F ree"

INTERNATIONAL

RECTIFIE R

LOGO

ASSEMBLY
LOT CODE

PART NUMBER

DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C

OR

INTE RNAT IONAL

RECTIFIER

LOGO

ASSEMBLY
LOT CODE

www.irf.com 9

PART NUMBER

DATE CODE
P = DESIGNATE S LEAD-F REE

PRODUCT (OPTIONAL)

YEAR 7 = 1997
WEEK 19

A = ASSEMBLY SITE CODE

IRF9540NS/LPbF

D2Pak Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

4.10 (.161)

3.90 (.153)

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

26.40 (1.039)

24.40 (.961)

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362)
MIN.

30.40 (1.197)
MAX.

4

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 09/05

10 www.irf.com

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/