Datasheet IRF7501 Datasheet (International Rectifier)

PD - 91265H

PRELIMINARY

HEXFET® Power MOSFET

l Generation V Technology
l Ulrtra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.

The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.

S1

G1

S2

G2

1

2

3

4

Top View

IRF7501

8

D1

7

D1

6

D2

5

D2

R

DS(on)

V

DSS

= 0.135Ω

Micro8

=20V

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.4
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.9 A
I

DM

PD @TA = 25°C Maximum Power Dissipation 1.25 W
PD @TA = 70°C Maximum Power Dissipation  0.8 W

V

GSM

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
TJ , TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C

Drain-Source Voltage 20 V

Pulsed Drain Current  19

Linear Derating Factor 0.01 W/°C
Gate-to-Source Voltage Single Pulse tp<10µs 16 V
Gate-to-Source Voltage ± 12 V

Soldering Temperature, for 10 seconds 240 (1.6mm from case)

Thermal Resistance

Parameter Max. Units

R

θJA

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

Maximum Junction-to-Ambient  100 °C/W

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4/30/98

IRF7501

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– –– – V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance

––– 0.085 0.135 VGS = 4.5V, ID = 1.7A 
––– 0.120 0.20 VGS = 2.7V, ID = 0.85A 

Ω

Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 2.6 ––– ––– S VDS = 10V, ID = 0.85A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V

––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C

µA

nA

Total Gate Charge ––– 5.3 8.0 ID = 1.7A
Gate-to-Source Charge ––– 0.84 1.3 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 2.2 3.3 VGS = 4.5V, See Fig. 9 
Turn-On Delay Time ––– 5.7 ––– VDD = 10V
Rise Time ––– 24 ––– ID = 1.7A
Turn-Off Delay Time ––– 15 ––– RG = 6.0Ω

ns

Fall Time ––– 16 ––– RD = 5.7Ω 
Input Capacitance ––– 260 ––– VGS = 0V
Output Capacitance ––– 130 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 8

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

1.25

––– ––– 19

A

G

Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V 
Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 1.7A
Reverse Recovery Charge ––– 37 56 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Pulse width ≤ 300µs; duty cycle ≤ 2%

max. junction temperature. ( See fig. 10 )

 I

≤ 1.7A, di/dt ≤ 66A/µs, V

SD

DD

≤ V

(BR)DSS

,

 Surface mounted on FR-4 board, t ≤10sec

TJ ≤ 150°C

2 www.irf.com

D

S

IRF7501

A

A

)

A

A

100

V G S
TOP 7.5V
5 .0V
4 .0V
3 .5V
3 .0V
2 .5V
2 .0V

10

BOTTOM 1.5V

1

0.1

D

I , Drain-to -So urc e C u rren t (A)

1.5V

20µs PULS E W IDTH
T = 25°C

0.01

0.1 1 10

V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

100

100

VGS
TOP 7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V

10

BOTTOM 1.5V

1

1.5V

0.1

D

I , D ra in-to -S o u rc e C u rre n t (A )

20µs PULS E WIDTH
T = 150°C

0.01

0.1 1 10

V , D rain-to-Source V oltage (V)

DS

J

Fig 2. Typical Output Characteristics

100

10

T = 150°C

J

T = 25°C

1

D

I , D rain-to-Source Current (A)

0.1

1.5 2.0 2.5 3.0 3.5 4.0

J

V = 10V

DS

20µs PULSE W IDTH

V , Gate - to -Sou rc e Voltage (V

GS

Fig 3. Typical Transfer Characteristics

10

T = 150°C

J

SD

T = 25°C

J

V = 0V

1

SD

I , Reverse Drain Current (A)

0.1

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

V , So urce-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

GS

Forward Voltage

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IRF7501

A

A

)

A

2.0

I = 1.7 A

D

1.5

1.0

(N o rmaliz ed )

0.5

DS(on)

R , D ra in -to -S o u rc e O n R e s is tan c e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Tem pe rature (°C)

J

Fig 5. Normalized On-Resistance

Vs. Temperature

(Ω

0.13

V = 4.5 V

GS

0.8

( Ω )

0.6

0.4

V = 2 .5 V

0.2

GS

, Drain-to-Source On Resistance

DS(on)

R

V = 5.0V

GS

0.0
0246

I , Drain Current (A

D

Fig 6. Typical On-Resistance Vs. Drain

Current

( Ω )

0.11

0.09

0.07

0.05

DS(on)

2345678

R , Dra in-to - S o ur c e On Res is tan c e

V , Ga te -to-S o urc e V oltage (V)

GS

I = 2.4 A

D

Fig 7. Typical On-Resistance Vs. Gate

Voltage

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IRF7501

A

A

500

400

300

200

C, Capacitance (pF)

100

0

1 10 100

V = 0V, f = 1 M Hz

GS

C = C + C , C S H O RTE D

iss g s gd d s

C = C

rss g d

C = C + C

oss d s g d

C

iss

C

oss

C

rss

V , D rain-to-Source V oltage (V)

DS

Fig 8. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

10

I = 1 . 7 A

D

V = 16 V

DS

8

6

4

2

GS

-V , Ga te -to -So u rc e Voltag e (V )

FOR TEST CIRCUIT

0

0246810

Q , To ta l Ga te Ch a rg e (n C)

G

SEE FIGURE 9

Fig 9. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

thJA

D = 0.50

0.20

0.10

10

0.05

0.02

0.01

1

Thermal Response (Z )

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

1 2

P

DM

t

1

t

2

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7501

Micro8 Package Outline

D

3

- B -

3

- C ­B 8X

NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.

Part Marking Information

IRF7501 example

8 7 6 5

E

- A ­1 2 3 4

e

6X

0.08 (.0 0 3 ) M C A S B S

e 1

A 1

H

0.2 5 (.01 0 ) M A M

A

0.10 (.004)

LEAD AS SIGNM ENTS

D D D D D1 D1 D2 D2

8 7 6 5 8 7 6 5

SINGLE

1 2 3 4 1 2 3 4

8X

L

S1 G1 S2 G2

S S S G

θ

DUAL

IN CH ES M IL L IM ETERS

DIM

MIN M A X M IN M A X

A .03 6 .04 4 0.9 1 1 .11
A1 .00 4 .00 8 0.1 0 0 .20
B .01 0 .01 4 0.2 5 0 .36
C .0 05 .0 07 0 .13 0 .1 8
D .1 16 .1 20 2 .95 3 .0 5
e .0256 BASIC 0.65 BASIC
e1 .0128 BASIC 0.33 BASIC
E .11 6 .12 0 2.9 5 3 .05
H .1 88 .1 98 4 .78 5 .0 3
L .016 .026 0.41 0.66

0° 6° 0° 6°

θ

RECOMMENDED FOOTPRINT

1.04
( .041 )
8X

C

8X

3.20
( .126 )

0.38
( .015 )

4.24
( .167 )

0 . 6 5
( .0256 )

6X

8X

5.28
( .20 8 )

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Tape & Reel

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( . 4 84 )

11.7 ( . 4 61 )

IRF7501

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. OUTLINE CONFOR M S TO EIA-481 & EIA-541.

2. CONTROLLING DIMENSION : MILLIMETER.

330.00
(12.992)
MAX.

NOTES :

1. CO NTROLLING DIMENSIO N : MILLIMETER.

2. OUTL INE C O N FOR M S T O E IA-481 & E IA-541.

FEED DIRECTION

14.40 ( .566 )

12.40 ( .488 )

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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 4/98

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