Datasheet IRF7401 Datasheet (International Rectifier)

PD - 9.1244C

A

IRF7401

HEXFET® Power MOSFET

l Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.

The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.

S

S

S

1

2

3

4

Top View

A

8

D

7

D

6

D

5

DG

R

DS(on)

V

DSS

= 20V

= 0.022Ω

SO-8

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 4.5V 10
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 8.7
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.0
I

DM

PD @TA = 25°C Power Dissipation 2.5 W

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J, TSTG

Pulsed Drain Current  35

Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 12 V

Junction and Storage Temperature Range -55 to + 150 °C

A

Thermal Resistance Ratings

Parameter Typ. Max. Units

R

θJA

Maximum Junction-to-Ambient ––– 50

°C/W

02/13/01

IRF7401

Electrical Characteristics @ T

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(ON)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance
Gate Threshold Voltage 0.70 ––– ––– VVDS = VGS, ID = 250µA

Forward Transconductance 11 ––– ––– SVDS = 15V, ID = 4.1A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
Total Gate Charge ––– ––– 48 ID = 4.1A
Gate-to-Source Charge ––– ––– 5.1 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 4.5V, See Fig. 6 and 12 
Turn-On Delay Time ––– 13 ––– VDD = 10V
Rise Time ––– 72 ––– ID = 4.1A
Turn-Off Delay Time ––– 65 ––– RG = 6.0Ω
Fall Time ––– 92 ––– RD = 2.4Ω, See Fig. 10 

Internal Drain Inductance ––– 2.5 –––

Internal Source Inductance ––– 4.0 –––

Input Capacitance ––– 1600 ––– VGS = 0V
Output Capacitance ––– 690 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz, See Fig. 5

= 25°C (unless otherwise specified)

J

––– ––– 0.022 VGS = 4.5V, ID = 4.1A 
––– ––– 0.030 VGS = 2.7V, ID = 3.5A 

––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125 °C

Ω

µA

nA

ns

Between lead tip

nH

and center of die contact

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 I

SD

TJ ≤ 150°C

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– ––– 3.1

––– ––– 35

Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V 
Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 4.1A
Reverse RecoveryCharge ––– 42 63 nC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

≤ 4.1A, di/dt ≤ 100A/µs, V

DD

≤ V

(BR)DSS

 Surface mounted on FR-4 board, t ≤ 10sec.

,

D

A

G

S



IRF7401

)

A

)

A

A

)

A

1000

V G S
TO P 7. 5V

5.0 V

4.0 V

3.5 V

3.0 V

2.5 V

2.0 V
BOT TOM 1.5V

100

10

D

I , D rain-to-Source C urrent (A)

1

0.1 1 10 100

V , Drain -to - S o ur c e Voltage (V

DS

1.5V
20µs PULSE WIDTH

T = 25 °C

A

Fig 1. Typical Output Characteristics

1000

1000

V G S
TO P 7 .5V

5.0 V

4.0 V

3.5 V

3.0 V

2.5 V

2.0 V
BOT TOM 1.5V

100

10

1.5V

D

I , D ra in -to- S o u rc e Cu rre n t (A )

20µs PULSE WIDTH
T = 150 °C

1

0.1 1 10 10 0

V , Drain -to - S o ur c e Voltage (V

DS

J

Fig 2. Typical Output Characteristics

2.0

I = 6.9 A

D

T = 25°C

100

10

D

I , D rain- to-S o urce Curre nt (A )

1

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V , G a te - to -Source Voltage (V)

GS

J

T = 150°C

J

V = 15V

DS

20µs PULSE W IDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , D r ain -to- S ou rc e On R es is ta nce

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V = 4.5V

GS

IRF7401

)

A

g

g

g

)

A

)

A

)

3000

2500

2000

1500

1000

C, C apa citance (p F)

500

0

1 10 100

V = 0 V , f = 1MH z

GS

C = C + C , C S HOR TE D

iss

C = C
C = C + C

C

iss

C

oss

C

rss

V , Drain -to -S o u rc e Voltage (V

DS

s gd ds

rss

d

oss ds

d

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

T = 25°C

J

T = 150°C

10

J

10

I = 4.1 A

D

V = 16 V

DS

8

6

4

2

GS

V , Gate -to-Sou rc e V o lta ge (V)

FOR TEST CIRCUIT

0

0 1020304050

Q , T ota l G a te C h a rge (nC

G

SEE FIGURE 12

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on

100us

1ms

10ms

1

SD

I , R ev er se D r a in C u rre n t (A )

0.1

0.0 1.0 2.0 3.0 4.0

V , Source-to-Drain Voltage (V

SD

V = 0V

Fig 7. Typical Source-Drain Diode

GS

10

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

A

T T= 150 C
Single Pulse

1

0.1 1 10 100

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

IRF7401

10.0

8.0

6.0

4.0

D

I , Drain Current (A)

2.0

0.0
25 50 75 100 125 150

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

100

R

V

DS

V

GS

R

G

D

D.U.T.

4.5V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

+

V

DD

-

D = 0.50

thJA

0.20

10

0.10

0.05

P

0.02

1

0.01

Thermal Response (Z )

0.1

0.0001 0.001 0.01 0.1 1 10 100

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJA A

DM

t



1 2

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7401

4.5V

Q

GS

V

G

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

Q

G

Q

GD

12V

V

GS

3mA

.3µF

D.U.T.

+

V

DS

-

I

D

Charge

I

G

Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit

IRF7401

Peak Diode Recovery dv/dt Test Circuit

D.U.T

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

-

+



-

**

• dv/dt controlled by R

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

VGS*



R

G

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

-

D =



G

P.W.

Period

+

VGS=10V

[ ] ***

+

*

V

DD

-

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

Current

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

*** V

= 5.0V for Logic Level and 3V Drive Devices

GS

di/dt

Diode Recovery

dv/dt

Fig 13. For N-Channel HEXFETS

V

DD

[ ]

I

[ ]

SD

IRF7401

)

)

)

)

)

(

(

Package Outline

SO-8 Outline

Dimensions are shown in millimeters (inches)

D

5

- B -

8 7 6 5

5

E

- A ­1 2 3 4

e

6X

- C -

0.25 (.010) M C A S B S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

5
MOLD PROTRUSIONS NOT TO EXCEED 0.25
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

6

B 8X

e1

A1

H

0.25 (.010) M A M

A

0.10 (.004

INCHES).

.006).

K x 45°

θ

6

L
8X

C
8X

INCHES MILLIMETERS

DIM

MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27

0° 8° 0° 8°

θ

RECOMMENDED FOOTPRINT

0.72 (.028
8X

6.46 ( .255

1.27 ( .050
3X

1.78 (.070
8X

Part Marking Information

SO-8

EXA M P LE : THIS IS AN IRF 7 10 1

312
IN TERNAT I ONAL
RE CT IFIE R
LO GO

F7101

TOP

DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
W W = W EEK

W AF E R

PART NUMBER

LOT CO D E
(LAST 4 DIGITS)

XXXX

BOTTOM

Tape & Reel Information

SO-8

Dimensions are shown in millimeters (inches)

IRF7401

330.00
(13.000)
MA X .

2.05 (.080)

1.95 (.077)

8.10 (.318)

7.90 (.311)

13.20 (.51 9)

12.80 (.50 4)

TERMINATION
NU M B E R 1

1

FEED DIRECTIO N

NOTES:
1 CO N FO RMS T O E IA -48 1- 1
2 INCLUDES FLANGE DISTORTION @ O UTER EDGE
3 DIMENSIONS MEASURED @ HUB
4 CONTROLLING DIMENSIO N : METRIC

4.10 (.161)

3.90 (.154)

1.60 (.062)

1.50 (.059)

6.50 (.255)

6.30 (.248)

1.85 (.072)

1.65 (.065)

5.55 (.218)

5.45 (.215)

2.60 (.102)

1.50 (.059)

15.40 (.607)

11.90 (.469)
2

14.40 (.566)

12.40 (.448)

3

5.30 (.208)

5.10 (.201)

18.40 (.724)
MAX

50.00
(1.96 9 )
MIN.

0.35 (.013)

0.25 (.010)

12.30 (.484)

11.70 (.461)

2.20 (.08 6)

2.00 (.07 9)

3

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97