Datasheet IRF3710ZPbF, IRF3710ZSPbF, IRF3710ZLPbF Datasheet

g

PD - 95466

AUTOMOTIVE MOSFET

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

G

TO-220AB

IRF3710Z

IRF3710ZPbF

IRF3710ZSPbF

IRF3710ZLPbF

HEXFET® Power MOSFET

D

S

IRF3710ZS

D2Pak

V

R

DS(on)

DSS

= 100V

= 18mΩ

ID = 59A

TO-262

IRF3710ZL

Absolute Maximum Ratings

ID @ TC = 25°C

I

@ TC = 100°C

D

I

DM

PD @TC = 25°C

V

GS

E

AS

E

(tested)

AS

I

AR

E

AR

T

J

T

STG

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation W

Linear Derating Factor W/°C Gate-to-Source Voltage V

Single Pulse Avalanche Energy (Thermally Limited)

le Pulse Avalanche Energy Tested Value

Sin

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and °C

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Thermal Resistance

R

JC

θ

R

CS

θ

R

JA

θ

R

JA

θ

Junct ion-to-Case ––– 0.92 °C/W Case-to-Sink, Flat, Greased Surface

Junct ion-to-Ambient ––– 62

Junct ion-to-Ambient (PCB Mount, steady state)

Parameter Units

@ 10V (Silicon Limited)

GS

@ 10V (See Fig. 9)

GS

c

d

i

c

h

See Fig.12a,12b,15,16

300 (1.6mm from case )

Max.

59

42

240

160

1.1

± 20

170

200

-55 to + 175

10 lbf•in (1.1N•m)

Parameter Typ. Max. Units

0.50 –––

j

––– 40

A

mJ

A

mJ

HEXFET® is a registered trademark of International Rectifier.

www.irf.com 1

6/30/04

IRF3710Z/S/LPbF

/

g

Static @ TJ = 25°C (unless otherwise specified)

V

(BR)DSS

∆ΒV R

DS(on)

V

GS(th)

DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V

∆T

Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 14 18 Gate Threshold Voltage 2.0 ––– 4.0 V

fs Forward Transconductance 35 ––– ––– S

I

DSS

GSS

Drain-to-Source Leakage Current ––– ––– 20 µA

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leaka Q Q Q t t t t L

L

C C C C C C

g

gs

gd

d(on)

r

d(off)

f

D

S

iss

oss

rss

oss

eff.

Total Gate Charge ––– 82 120 nC

Gate-to-Source Charge ––– 19 28

Gate-to-Drain ("Miller") Charge ––– 27 40

Turn-On Delay Time ––– 17 ––– ns

Rise Time ––– 77 –––

Turn-Off Delay Time ––– 41 –––

Fall Time ––– 56 –––

Internal Drain Inductance ––– 4.5 ––– nH Between lead,

Internal Source Inductance ––– 7.5 ––– from package

Input Capacitance ––– 2900 ––– pF

Output Capacitance ––– 290 –––

Reverse Transfer Capacitance ––– 150 –––

Output Capacitance ––– 1130 –––

Output Capacitance ––– 170 –––

Effective Output Capacitance ––– 280 –––

Parameter Min. Typ. Max. Units

––– ––– 250

e ––– ––– -200

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I V

= 10V, ID = 35A

Ω

m

GS

VDS = VGS, ID = 250µA V

= 50V, ID = 35A

DS

V

= 100V, VGS = 0V

DS

V

= 100V, VGS = 0V, TJ = 125°C

DS

V

= 20V

GS

V

= -20V

GS

I

= 35A

D

= 80V

V

DS

V

= 10V

GS

V

DD

I

= 35A

D

R

G

V

GS

6mm (0.25in.)

and center of die contact V

GS

V

DS

ƒ = 1.0MHz, See Fig. 5 V

GS

V

GS

VGS = 0V, VDS = 0V to 80V

f

= 50V

= 6.8Ω

= 10V

f

= 0V

= 25V

= 0V, VDS = 1.0V, ƒ = 1.0MHz = 0V, VDS = 80V, ƒ = 1.0MHz

= 1mA

D

f

D

G

S

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Continuous Source Current ––– ––– 59

(Body Diode) A

Pulsed Source Current ––– ––– 240

(Body Diode)

c

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge ––– 100 160 nC

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Repetitive rating; pulse width limited by

Parameter Min. Typ. Max. Units

max. junction temperature. (See fig. 11).

 Limited by T

RG = 25Ω, I

, starting TJ = 25°C, L = 0.27mH,

Jmax

= 35A, VGS =10V. Part not

AS

recommended for use above this value.

 I

≤ 35A, di/dt ≤ 380A/µs, V

SD

DD

≤ V

(BR)DSS

TJ ≤ 175°C.

 Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

MOSFET symbol

showing the integral reverse

p-n junction diode. ––– ––– 1.3 V –––5075ns

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C

while V

oss

 Limited by T

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

TJ = 25°C, IS = 35A, VGS = 0V

T

= 25°C, IF = 35A, VDD = 25V

J

di/dt = 100A/µs

avalanche performance.

 This value determined from sample failure population. 100%

,

tested to this value in production.

 This is applied to D

2

Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

Conditions

f

.

DSS

G

2 www.irf.com

D

S

f

IRF3710Z/S/LPbF

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

D

1000

100

10

1

0.1

TOP 15V

BOTTOM 4.5V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

20µs PULSE WIDTH Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

) A

( t n e

r

r u

C e

c

r u o S

o

t

n

i a

r D

, I

1000

TOP 15V

100

BOTTOM 4.5V

10

D

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

20µs PULSE WIDTH Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

)

Α

(

t

100

n e

r

r u

C e

c

r

10

u o S

o

t

n

i a

r

1

D ,

D

I

TJ = 25°C

V

0

2 4 6 8 10

20µs PULSE WIDTH

DS

TJ = 175°C

= 25V

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

120

) S

(

100

e c n a

t c

80

u d n o c s n

60

a

r T

d

r a

40

w

r o F ,

S

20

F

G

0

0 10 20 30 40 50 60 70

VDS = 15V 20µs PULSE WIDTH

TJ = 25°C

TJ = 175°C

ID, Drain-to-Source Current (A)

Fig 4. Typical Forward Transconductance

vs. Drain Current

www.irf.com 3

IRF3710Z/S/LPbF

100000

10000

) F p

( e c n a

t

i

1000

c a p a

C ,

C

100

10

1 10 100

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

gs

gd

ds

C

+ Cgd, C

+ C

Ciss

Coss

gd

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

SHORTED

ds

12.0 ID= 35A

)

10.0

V

( e

g a

t

l

8.0

o V

e c

r u

6.0

o S

o

t

e

t

4.0

a G

,

S G

2.0

V

VDS= 80V

VDS= 50V

VDS= 20V

0.0 0 20406080100

Q

Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage

1000.00

1000

OPERATION IN THIS AREA LIMITED BY RDS(on)

) A

(

100.00

t n e

r

r u

C n

i a

r D e

s

r e v e

R ,

D S

I

10.00

1.00

TJ = 175°C

TJ = 25°C

0.10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

V

= 0V

GS

) A

( t

100

n e

r

r u

C e

c

r u o S

o

t

n

i a

r D ,

D

I

10

1

Tc = 25°C Tj = 175°C

100µsec

1msec

10msec

Single Pulse

0.1 1 10 100 1000

V

, Drain-toSource Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com

IRF3710Z/S/LPbF

60

50

) A

(

40

t n e

r

r u

30

C n

i a

r D

20

,

D

I

10

0

25 50 75 100 125 150 175

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

3.0

e c n a

t s

i s e

R n O e

c

r u o S

o

t

n

i a

r D

,

) n o

( S D

R

ID = 59A

V

= 10V

GS

2.5

2.0

) d e z

i

l

1.5

a m

r o

N

(

1.0

0.5

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 10. Normalized On-Resistance

vs. Temperature

10

)

C

1

J h

t

Z (

e s n o p s e

R l a

m

r e h T

0.001

D = 0.50

0.20

0.1

0.01

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

0.10

0.05

0.02

0.01

SINGLE PULSE ( THERMAL RESPONSE )

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5

IRF3710Z/S/LPbF

A

15V

DRIVER

+

V

DD

-

R

V

20V

V

DS

G

GS

L

D.U.T

I

AS

Ω

0.01

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

Q

GD

300

) J

m

( y

250

g

r e n E

e

200

h c n a

l a

150

v A

e s

l u

100

P e

l g n

i S

50

,

S A

E

0

25 50 75 100 125 150 175

TOP 15A

BOTTOM35A

Starting TJ , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

5.0

I

D

25A

V

G

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

+

V

DS

-

I

D

Fig 13b. Gate Charge Test Circuit

) V

( e

g

4.0

a

t

l o V

d

l o h s

3.0

e

r h

t e

t a

G

) h

2.0

t

( S G

V

1.0

-75 -50 -25 0 25 50 75 100 125 150 175 200

ID = 250µA

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

6 www.irf.com

1000

IRF3710Z/S/LPbF

Duty Cycle = Single Pulse

100

) A

( t n e

r

r u

C

10

e h c n a

l a v A

1

0.1

1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

0.01

0.05

0.10

Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆Tj = 25°C due to avalanche losses

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

200

TOP Single Pulse BOTTOM 10% Duty Cycle

) J

150

m

( y

g

r e n E

e

100

h c n a

l a v A ,

50

R A

E

0

25 50 75 100 125 150 175

ID = 35A

Starting TJ , Junction Temperature (°C)

Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

. This is validated for

jmax

every part type.

2. Safe operation in Avalanche is allowed as long asT not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.

4. P

= Average power dissipation per single

D (ave)

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I

= Allowable avalanche current.

av

7. ∆T = Allowable rise in junction temperature, not to exceed

T

(assumed as 25°C in Figure 15, 16).

jmax

t

Average time in avalanche.

av =

D = Duty cycle in avalanche = t Z

(D, tav) = Transient thermal resistance, see figure 11)

thJC

av

·f

jmax

is

P

= 1/2 ( 1.3·BV·Iav) = DT/ Z

Fig 16. Maximum Avalanche Energy

D (ave)

I

2DT/ [1.3·BV·Zth]

av =

E

= P

AS (AR)

D (ave)·tav

thJC

vs. Temperature

www.irf.com 7

IRF3710Z/S/LPbF





D.U.T

+

-

R

G

+



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

-

• Low Leakage Inductance Current Transformer



-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

G

Reverse Recovery

+

-

Current

Re-Applied Voltage

+

V

DD

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

* V

GS

Period

P.W.

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

= 5V for Logic Level Devices

D =

P. W .

Period

VGS=10V

V

DD

I

SD

*

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

R

D.U.T.

D

+

V

DD

-

V

DS

V

GS

R

G

10V

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

V

DS

90%

10% V

GS

t

d(on)tr

t

d(off)tf

Fig 18b. Switching Time Waveforms

8 www.irf.com

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

IRF3710Z/S/LPbF

10.54 (.415)

2.87 (.1 13)

2.62 (.1 03)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

2 CONTROL LING DIMEN SION : INCH 4 HEATS INK & LEA D MEAS UREMEN TS D O NOT INCLUDE BURRS.

2X

10.29 (.405)

4

1 2 3

3.78 (.149)

3.54 (.139)

- A -

6.47 (.2 55)

6.10 (.2 40)

1.15 (. 045) MIN

4.06 (.160)

3.55 (.140)

0.93 (.037)

3X

0.69 (.027)

0.36 (.014) M B A M

4.69 (.1 85)

4.20 (.1 65)

- B -

1.32 (.052)

1.22 (.048)

2.92 (.115)

2.64 (.104)

HEXFET

1- GATE 2- DRAIN 3- SOURCE 4- DRAIN

3X

LEAD ASSIGN MENTS

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN

0.55 (. 022)

0.46 (. 018)

TO-220AB Part Marking Information

IGBTs, CoPACK

1- GAT E 2- COLLECTOR 3- EMITTER 4- COLLECTOR

EXAMPLE:

T HIS IS AN IRF1010

LOT CODE 1789 ASS EMB LE D ON WW 19, 19 97 IN THE ASSEMBLY LINE "C"

Note: "P" in assembly line position indicates "Lead-Free"

INT E R NAT IONAL

RE CTIF IER

LOGO

ASSEMBLY LOT CODE

PART NUMBER

DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C

www.irf.com 9

IRF3710Z/S/LPbF

2

D

Pak Package Outline

Dimensions are shown in millimeters (inches)

D2Pak Part Marking Information (Lead-Free)

T H IS IS AN IR F 530S WIT H

LOT CODE 8024 ASS E MBL E D ON WW 02, 2000 IN THE ASSEMBLY LINE "L"

N ote: "P" in as sem bly line

po s i tio n i nd icate s "L ead-F ree"

INT E R N AT ION AL

RECTIFIER

LOGO

AS SE MB LY LOT CODE

F530S

PART NUMBER

DATE CODE YEAR 0 = 2000 WEEK 02 LINE L

OR

INT ER N AT ION AL

R E CT IF IER

LOGO

ASSEMBLY LOT CODE

F530 S

10 www.irf.com

PART NUMBE R

DATE CODE P = D E S IGNAT E S L E AD -F R E E

PRODUCT (OP TIONAL)

YEAR 0 = 2000 WE EK 02

A = AS S EM B LY S IT E CO D E

TO-262 Package Outline

IRF3710Z/S/LPbF

IGBT

1- GATE

2- COLLECTOR

3- EMITTER

TO-262 Part Marking Information

TH IS IS AN IRL3103L

E X AMPL E :

LOT CODE 1789 ASS EMBLE D ON WW 19, 1997 IN THE ASS EMBLY LINE "C"

Note: "P" in ass embly line pos iti on indicates "L ead-F ree"

INTE RNAT IONAL

RECTIFIER

LOGO

AS S E MB L Y LOT CODE

PART NUMBE R

DATE CODE YEAR 7 = 1997 WEEK 19 LINE C

OR

INTE RNATIONAL

RECT IFIE R

LOGO

ASSEMBLY LOT CODE

www.irf.com 11

PART NUMBER

DAT E CODE P = DES IGNATE S LE AD-F REE

PRODUCT (OPT IONAL )

YEAR 7 = 1997 WE EK 19

A = ASSEMBLY SITE CODE

IRF3710Z/S/LPbF

D2Pak Tape & Reel Infomation

Dimensions are shown in millimeters (inches)

TRR

4.10 (.161)

3.90 (.153)

FEED DIRECTION

TRL

FEED DIRECTION

1.85 (.073)

1.65 (.065)

10.90 (.429)

10.70 (.421)

1.60 (.063)

1.50 (.059)

11.60 (.457)

11.40 (.449)

16.10 (.634)

15.90 (.626)

1.60 (.063)

1.50 (.059)

1.75 (.069)

1.25 (.049)

15.42 (.609)

15.22 (.601)

0.368 (.0145)

0.342 (.0135)

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

13.50 (.532)

12.80 (.504)

330.00 (14.173) MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES F LANGE D ISTORTION @ O UTER EDGE.

27.40 (1.079)

23.90 (.941)

26.40 (1.039)

24.40 (.961)

TO-220AB package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

4

60.00 (2.362) MIN.

30.40 (1.197) MAX.

4

3

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/04

12 www.irf.com

Datasheet IRF3710ZPbF, IRF3710ZSPbF, IRF3710ZLPbF Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual