Datasheet IRF3415S, IRF3415L Datasheet (International Rectifier)

PD - 91509C

IRF3415S/L

HEXFET® Power MOSFET

l Advanced Process Technology
l Surface Mount (IRF3415S)
l Low-profile through-hole (IRF3415L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

G

D

V

R

DS(on)

= 150V

DSS

= 0.042Ω

ID = 43A

S

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.

2

Pak is a surface mount power package capable of

The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-

2

D Pak

TO-262

resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low­profile applications.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
I

DM

PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

T

STG

Pulsed Drain Current  150

Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 590 mJ
Avalanche Current 22 A
Repetitive Avalanche Energy 20 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θJA

Junction-to-Case ––– 0.75
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40

°C/W

°C

5/13/98

IRF3415S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.042 Ω VGS = 10V, ID = 22A 
Gate Threshold Voltage 2 .0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 19 ––– ––– S VDS = 50V, ID = 22A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 150V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 200 ID = 22A
Gate-to-Source Charge ––– ––– 17 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– ––– 98 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 12 ––– VDD = 75V
Rise Time ––– 55 ––– ID = 22A
Turn-Off Delay Time ––– 71 –– – RG = 2.5Ω

ns

Fall Time ––– 69 ––– RD = 3.3Ω, See Fig. 10 
Internal Source Inductance

––– –––

7.5

Between lead,

nH

and center of die contact
Input Capacitance ––– 2400 ––– VGS = 0V
Output Capacitance ––– 640 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

43

150

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V 
Reverse Recovery Time ––– 260 390 ns TJ = 25°C, IF = 22A
Reverse Recovery Charge ––– 2.2 3.3 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25°C, L = 2.4mH

J

= 22A. (See Figure 12)

AS

≤ 22A, di/dt ≤ 820A/µs, V

DD

≤ V

(BR)DSS

 Uses IRF3415 data and test conditions

,

showing the

A

p-n junction diode.



D

G

S

IRF3415S/L

1000

100

D

I , Drain-to-Source Current (A)

10

1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.5V

4.5V

5.0V

BOTTOM

4.5V

20us PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

o

Fig 1. Typical Output Characteristics

1000

1000

100

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.5V

4.5V

5.0V

4.5V

D

I , Drain-to-Source Current (A)

20us PULSE WIDTH

10

1 10 100

V , Drain-to-Source Voltage (V)

DS

T = 175 C

o

J

Fig 2. Typical Output Characteristics

3.0

I =

D

37A

°

T = 25 C

J

100

D

I , Drain-to-Source Current (A)

10

4 5 6 7 8 9 10

V , Gate-to-Source Voltage (V)

GS

T = 175 C

J

V = 50V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.5

2.0

°

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

V =

GS

o

10V

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF3415S/L

6000

5000

4000

3000

2000

C, Capacitance (pF)

1000

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C

C SHORTED
C
C

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

20

I =

22A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

V = 120V

DS

V = 75V

DS

V = 30V

DS

FOR TEST CIRCUIT

0

0 40 80 120 160 200

Q , Total Gate Charge (nC)

G

SEE FIGURE

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

100

o

T = 175 C

J

10

o

T = 25 C

J

1

SD

I , Reverse Drain Current (A)

V = 0 V

0.1

0.2 0.6 1.0 1.4 1.8

V ,Source-to-Drain Voltage (V)

SD

GS

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

10

D

I , Drain Current (A)I , Drain Current (A)

o

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100 1000

o

J

V , Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

Fig 8. Maximum Safe Operating Area

IRF3415S/L

R

D.U.T.

D

+

V

DD

-

50

40

V

DS

V

GS

R

G

30

20

D

I , Drain Current (A)

10

Fig 10a. Switching Time Test Circuit

V

DS

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

90%

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

Fig 9. Maximum Drain Current Vs.

°

10%
V

GS

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

1

D = 0.50

thJC

0.20

0.1

0.10
P

1 2

DM

t

1

t

2

0.05

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF3415S/L

A

15V

DRIVER

+

-

R

20V

V

DS

G

t

L

D.U.T

I

AS

Ω

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

1400

1200

TOP
BOTTOM

1000

800

V

DD

600

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

o

I

D

9.0A
16A
22A

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

D

Fig 13b. Gate Charge Test Circuit

V

DS

-

IRF3415S/L

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-

-

• dv/dt controlled by R

• Driver same type as D.U.T.

G

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =



P.W.

Period

+

+

V

DD

-

VGS=10V

*

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-Channel HEXFETS

Current

di/dt

Diode Recovery

dv/dt

V

DD

I

SD

IRF3415S/L

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055)
MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTE S:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.2 5 ( .0 10) M B A M

Part Marking Information

D2Pak

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

LEAD ASSIGNMENTS
1 - G ATE
2 - D RAIN
3 - S OU R CE

10.16 (.400)
REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

INTERNATIONAL
RE CTIFIER
LO G O

A S SEMBLY
LO T CO D E

F530S

9246

9 B 1 M

PART NUM B ER

DATE CODE
(YYW W )
YY = YEAR
WW = WEEK

Package Outline

TO-262 Outline

IRF3415S/L

Part Marking Information

TO-262

IRF3415S/L

Tape & Reel Information

D2Pak

TRR

1.60 (.063)

1.50 (.059)

4.10 (.16 1)

3.90 (.15 3)

1.60 (.063)

1.50 (.059)

0.368 (.0145)

0.342 (.0135)

FEED D IRECTION

1.85 (.07 3)

1.65 (.06 5)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. COM FO R M S TO E IA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HU B.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

1.75 (.069)

1.25 (.049)

16.10 (.634)

15.90 (.626)

15.42 (.609)

15.22 (.601)

27.40 (1.079)

23.90 (.941)

4

26.4 0 (1.039)

24.40 (.961 )

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362)
MIN.

30.40 (1.197)
MAX .

4

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http://www.irf.com/ Data and specifications subject to change without notice. 5/98