Datasheet IRF3315S, IRF3315L Datasheet (International Rectifier)

PD - 9.1617A

PRELIMINARY

IRF3315S/L

HEXFET® Power MOSFET

l Advanced Process Technology
l Surface Mount (IRF3315S)
l Low-profile through-hole (IRF3315L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

G

Description

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.

2

Pak is a surface mount power package capable of

The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on­resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3315L) is available for low­profile applications.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 21
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 15 A
I

DM

PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 94 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  2.5 V/ns
T

J

T

STG

Pulsed Drain Current  84

Linear Derating Factor 0.63 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 350 mJ
Avalanche Current 12 A
Repetitive Avalanche Energy 9.4 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

D

S

2

D Pak

V

R

DS(on)

TO-262

= 150V

DSS

= 0.082Ω

ID = 21A

°C

Thermal Resistance

R

θJC

R

θJA

Junction-to-Case ––– 1.6
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40

Parameter Typ. Max. Units

°C/W

11/7/97

IRF3315S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.082 Ω VGS = 10V, ID = 12A 
Gate Threshold Voltage 2. 0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 12A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 150V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge ––– ––– 95 ID = 12A
Gate-to-Source Charge ––– ––– 11 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– ––– 47 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 9.6 ––– VDD = 75V
Rise Time ––– 32 ––– ID = 12A
Turn-Off Delay Time ––– 49 ––– RG = 5.1Ω

ns

Fall Time ––– 38 ––– RD = 5.9Ω, See Fig. 10 
Internal Source Inductance

––– –––

7.5

Between lead,

nH

and center of die contact
Input Capacitance ––– 1300 ––– VGS = 0V
Output Capacitance ––– 300 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 V

DD

RG = 25Ω, I

 I

SD

TJ ≤ 175°C

** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

21

84

showing the

A

p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V 
Reverse Recovery Time ––– 174 260 n s TJ = 25°C, IF = 43A
Reverse Recovery Charge ––– 1.2 1.7 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

= 25V, starting TJ = 25°C, L = 4.9 mH

= 12A. (See Figure 12)

AS

≤ 12A, di/dt ≤ 140A/µs, V

DD

≤ V

(BR)DSS

 Uses IRF3315 data and test conditions

,



D

G

S

IRF3315S/L

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

4.5V

20µs PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100

°

T = 25 C

J

°

T = 175 C

J

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM

4.5V

20µs PULSE WIDTH
T = 175 C

J

V , Drain-to-Source Voltage (V)

DS

4.5V

°

Fig 2. Typical Output Characteristics

3.0

2.5

I =

D

21A

10

D

I , Drain-to-Source Current (A)

V = 50V

DS

1

4 5 6 7 8 9 10

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

2.0

1.5

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

Vs. Temperature

V =

GS

°

10V

IRF3315S/L

3000

2500

2000

1500

1000

C, Capacitance (pF)

500

0

1 10 100

V

=

0V,

GS

C

=

iss gs gd , ds

C

=

rss gd

C

=

oss ds gd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

I =

12

A

D

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

0 20 40 60 80 100

V = 120V

DS

V = 75V

DS

V = 30V

DS

FOR TEST CIRCUIT

SEE FIGURE

Q , Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

°

T = 25 C

10

°

T = 175 C

J

1

SD

I , Reverse Drain Current (A)

0.1

0.2 0.5 0.8 1.1 1.4

V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

10us

100us

10

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

1ms

10ms

Fig 8. Maximum Safe Operating Area

IRF3315S/L

R

D.U.T.

D

+

V

DD

-

25

20

V

DS

V

GS

R

G

15

10

D

I , Drain Current (A)

5

Fig 10a. Switching Time Test Circuit

V

DS

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

90%

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

10%
V

GS

Fig 9. Maximum Drain Current Vs.

t

d(on)tr

t

d(off)tf

Case Temperature

Fig 10b. Switching Time Waveforms

10

thJC

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

Thermal Response (Z )

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

1 2

P

DM

t

1

t

2

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF3315S/L

A

15V

DRIVER

+

-

R

V

G

20V

DS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

I

AS

Fig 12b. Unclamped Inductive Waveforms

1000

TOP

800

600

V

DD

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature( C)

J

BOTTOM

I

D

4.9A

8.5A
12A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

Q

G

12V

10 V

Q

GS

V

G

Fig 13a. Basic Gate Charge Waveform

Q

GD

Charge

Fig 13b. Gate Charge Test Circuit

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

V

DS

-

D

IRF3315S/L

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+

Circuit Layout Considerations

• Low Stray Inductance



• Ground Plane

• Low Leakage Inductance
Current Transformer

-



-

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

Period

D =

Period

P.W.

+

+

V

DD

-

VGS=10V

*

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. ISDWaveform

Body Diode Forward

D.U.T. VDSWaveform

Body Diode Forward Drop

Inductor Curent

Ripple ≤ 5%

* V

= 5V for Logic Level Devices

GS

Fig 14. For N-Channel HEXFETS

Current

di/dt

Diode Recovery

dv/dt

V

DD

I

SD

IRF3315S/L

A

D2Pak Package Outline

10.54 (.415)

1.40 (.055)
MAX.

1.78 (.070)

1.27 (.050)

1.40 (.055)

3X

1.14 (.045)

5.08 (.200)

NOTES:
1 D IMENS IO NS AFTER S OLDER D IP .
2 DIMENS IONING & TOLE RA N C ING PER A N S I Y14.5M, 1982.
3 CONTROLLING DIMENSION : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.

10.29 (.405)

- A ­2

1 3

15.49 (.610)

14.73 (.580)

0.93 (.037)

3X

0.69 (.027)

0.25 (.010) M B A M

4.69 (.185)

4.20 (.165)

5.28 (.208)

4.78 (.188)

0.55 (.022)

0.46 (.018)

LEAD ASSIGNMENTS
1 - G ATE
2 - D RA IN
3 - S OU RCE

- B -

1.32 (.052)

1.22 (.048)

2.79 (.110)

2.29 (.090)

1.39 (.055)

1.14 (.045)

10.16 (.400)
REF.

6.47 (.255)

6.18 (.243)

2.61 (.103)

2.32 (.091)

8.89 (.350)
REF.

MINIMUM RECOMMENDED FOOTPRINT

11.43 (.450)

8.89 (.350)

17.78 (.700)

3.81 (.150)

2.08 (.082)
2X

2.54 (.100)
2X

Part Marking Information

D2Pak

INTERNATIONAL
R EC T IF IER
L O GO

A S SE MB LY
L O T COD E

F530S

9246

9 B 1 M

PART NUMB ER

DATE CODE
(YYWW)
YY = YEAR
WW = WEEK

Package Outline

TO-262 Outline

IRF3315S/L

Part Marking Information

TO-262

IRF3315S/L

Tape & Reel Information

D2Pak

TRR

1.60 (.063)

1.50 (.059)

4.10 (.16 1)

3.90 (.15 3)

1.60 (.06 3)

1.50 (.05 9)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

1.85 (.073)

1.65 (.065)

TRL

10.90 (.429)

10.70 (.421)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

330.00
(14.173)
MAX.

NOTES :

1. CO M F O R M S TO E IA - 4 18.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

11.60 (.457)

11.40 (.449)

1.75 (.069 )

1.25 (.049 )

16.10 (.634)

15.90 (.626)

15.42 (.609 )

15.22 (.601 )

27 .4 0 ( 1.07 9 )

23.90 (.941)
4

26.40 (1.039)

24.40 (.961)

3

24.30 (.957)

23.90 (.941)

4.72 (.136)

4.52 (.178)

60.00 (2.362)
M IN .

30.40 (1.197)
MAX .

4

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 11/97