Datasheet IRF3315 Datasheet (International Rectifier)

APPROVED

HEXFET® Power MOSFET

PD -91623A

IRF3315

l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

G

D

V

= 150V

DSS

R

S

DS(on)

ID = 27A

= 0.07Ω

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO­220 contribute to its wide acceptance throughout the

TO-220AB

industry.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 27
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 19 A
I

DM

PD @TC = 25°C Power Dissipation 136 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt  2.5 V/ns
T

J

T

STG

Pulsed Drain Current  108

Linear Derating Factor 0.91 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 350 mJ
Avalanche Current 12 A
Repetitive Avalanche Energy 13.6 mJ

Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 1.1
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

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12/09/98

IRF3315

APPROVED

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– ––– 0.07 Ω VGS = 10V, ID = 12A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 11.4 ––– ––– S VDS = 50V, ID = 12A

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

VDS = 150V, VGS = 0V

µA

nA

VGS = -20V
Total Gate Charge –– – ––– 95 ID = 12A
Gate-to-Source Charge ––– ––– 11 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– ––– 47 VGS = 10V, See Fig. 6 and 13 
Turn-On Delay Time ––– 9.6 ––– VDD = 75V
Rise Time ––– 32 ––– ID = 12A
Turn-Off Delay Time ––– 49 ––– RG = 5.1Ω

ns

Fall Time ––– 38 ––– RD = 5.9Ω, See Fig. 10 

4.5

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

7.5

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 1300 ––– VGS = 0V
Output Capacitance ––– 300 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

27

108

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 12A, VGS = 0V 
Reverse Recovery Time ––– 174 260 ns TJ = 25°C, IF = 12A
Reverse Recovery Charge ––– 1.2 1.7 µC di/dt = 100A/µs



Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 Starting T

RG = 25 Ω, I

= 25°C, L = 4.9mH

J

= 12A. (See Figure 12)

AS

 I

≤ 12A, di/dt ≤ 140A/µs, V

SD

DD

≤ V

(BR)DSS

TJ ≤ 175°C

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

,

2 www.irf.com

D

S

APPROVED

IRF3315

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

BOTTOM

7.0V

6.0V

5.5V

5.0V

4.5V

INPUT NEW DATA

4.5V

20µs PULSE WIDTH
T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

1000

INPUT NEW DATA

°

T = 25 C

100

J

T = 175 C

J

1000

100

10

D

I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

15V
10V

8.0V

7.0V

6.0V

INPUT NEW DATA

5.5V

5.0V

BOTTOM

4.5V

20µs PULSE WIDTH
T = 175 C

J

V , Drain-to-Source Voltage (V)

DS

4.5V

°

Fig 2. Typical Output Characteristics

3.0

2.5

2.0

°

1.5

I =

D

27A

INPUT NEW DATA

10

D

I , Drain-to-Source Current (A)

V = 50V

DS

1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

(Normalized)

1.0

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

10V

Vs. Temperature

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IRF3315

APPROVED

3000

2500

2000

1500

1000

C, Capacitance (pF)

500

0

1 10 100

V

=

0V,

GS

C

=

issgsgd , ds

C

=

rssgd

C

=

oss dsgd

C

iss

C

oss

C

rss

V , Drain-to-Source Voltage (V)

DS

f = 1MHz

C

+ C
C
C

C SHORTED

+ C

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20

16

12

8

4

GS

V , Gate-to-Source Voltage (V)

0

A

I =

12

D

0 20 40 60 80 100

V = 120V

DS

V = 75V

DS

V = 30V

DS

FOR TEST CIRCUIT

SEE FIGURE

Q , Total Gate Charge (nC)

G

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

13

INPUT NEW DATA

10

°

T = 175 C

J

100

10us

INPUT NEW DATA

100us

1

°

T = 25 C

SD

I , Reverse Drain Current (A)

0.1

0.3 0.6 0.9 1.2 1.5

V ,Source-to-Drain Voltage (V)

SD

J

V = 0 V

GS

Fig 7. Typical Source-Drain Diode

10

D

I , Drain Current (A)I , Drain Current (A)

1ms

°

= 25 C

C

T T= 175 C
Single Pulse

1

1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

10ms

Fig 8. Maximum Safe Operating Area

Forward Voltage

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30

25

20

15

INPUT NEW DATA

10

D

I , Drain Current (A)

5

0

25 50 75 100 125 150 175

T , Case Temperature ( C)

C

°

Fig 9. Maximum Drain Current Vs.

Case Temperature

APPROVED

V

GS

R

G

10V

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 10b. Switching Time Waveforms

IRF3315

R

D.U.T.

t

d(off)tf

D

+

V

DD

-

V

DS

10

INPUT NEW DATA

thJC

1

D = 0.50

0.20
P

1 2

DM

t

1

t

2

0.10

0.1

0.05

Thermal Response (Z )

0.01

0.02

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF3315

A

APPROVED

15V

DRIVER

+

-

R

20V

V

DS

G

t

L

D.U.T

I

AS

Ω

0.01

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)DSS

t

p

1000

TOP

800

600

V

DD

400

200

AS

E , Single Pulse Avalanche Energy (mJ)

0

25 50 75 100 125 150 175

Starting T , Junction Temperature ( C)

J

BOTTOM

I

D

4.9A

8.5A
12A

°

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

I

AS

Fig 12b. Unclamped Inductive Waveforms

Q

G

10 V

Q

GS

V

G

Q

GD

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

V

GS

.3µF

D.U.T.

3mA

I

G

Current Sampling Resistors

I

+

-

D

Fig 13b. Gate Charge Test Circuit

V

DS

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APPROVED

IRF3315

Peak Diode Recovery dv/dt Test Circuit





D.U.T

+

-

R

G

Driver Gate Drive

P.W.

+



-

Period

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer

-

• dv/dt controlled by R

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D =

G

Period



P.W.

+

+

V

DD

-

VGS=10V

*

D.U.T. ISDWaveform

Reverse
Recovery
Current

Re-Applied
Voltage

D.U.T. VDSWaveform

Inductor Curent

* V

= 5V for Logic Level Devices

GS

Body Diode Forward

Current

di/dt

Diode Recovery

dv/dt

Body Diode Forward Drop

Ripple ≤ 5%

V

DD

I

SD

Fig 14. For N-Channel HEXFETS

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IRF3315

A

APPROVED

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

10.29 (.405)

1 2 3

6.47 (.255)

6.10 (.240)

4

1.15 (.045)
M IN

4.06 (.160)

3.55 (.140)

3.78 (.149)

3.54 (.139)

- A -

4.69 (.185)

4.20 (.165)

- B -

1.32 (.052)

1.22 (.048)

LEAD ASSIGNMENTS
1 - GA T E
2 - DR A IN
3 - SO U RCE
4 - DR A IN

1.40 (.055)

3X

1.15 (.045)

2.54 (.100)

NOTES:
1 DIM EN SIO N IN G & T O LE RA NC IN G PE R A NS I Y1 4 . 5 M , 19 82. 3 OU TL IN E C ON FO RM S T O J E DE C O U TL IN E T O -2 2 0 AB .
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

2X

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IRF1010
W IT H AS SE MB L Y
LO T CO DE 9B 1 M

0.93 (.037)

3X

0.69 (.027)

0.36 (.01 4) M B A M

INTERNATIONAL
RE CTI F IER
LO GO

ASSEMBLY
LO T C ODE

IRF1010

9246

9B 1 M

0.55 (.022)

3X

0.46 (.018)

2.92 (.115)

2.64 (.104)

PART NUMBER

DATE CODE
(YYW W)
YY = YEAR
WW = WEEK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 12/98

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