Page 1
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP112 is designed for use in general purpose amplifier and lowspeed switching applications.
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002.03.28
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperatu re........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 50 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 100 V
BVCEO Collector to Emitter Voltage.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current (Continue) ......................................................................................................... 4 A
IC Collector Current (Peak)................................................................................................................ 6 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA
BVCEO 100 - - V IC=30mA
ICBO - - 1 mA VCB=100V
ICEO - - 2 mA VCE=50V
IEBO - - 2 mA VEB=5V
*VCE(sat) - - 2.5 V IC=2A, IB=8mA
*VBE(on) - - 2.8 V IC=2A, VCE=4V
*hFE1 1 - - K IC=1A, VCE=4V
*hFE2 500 - - IC=2A, VCE=4V
Cob - - 200 pF VCB=10V, f=0.1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
C
B
R2R1
E
HTIP112 HSMC Product Specification
Page 2
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002.03.28
Page No. : 2/4
10000
Cur ren t Ga in & C ollector Cu rrent
1000
125oC
75oC
100
hFE
25oC
10
1
1 10 100 1000 10000
10000
Sat urati on Voltage & Col lector Current
CE(sat)
V
Collector Current - IC (mA)
@ IC=100I
B
hFE @ VCE=4V
10000
Cur ren t Ga in & C ollector Cu rrent
1000
125oC
100
hFE
25oC
10
1
1 10 100 1000 10000
10000
Sat ur ation Voltage & Collector C urrent
CE(sat)
V
Collector Current-IC (mA)
@ IC=250I
B
75oC
hFE @ VCE=3V
1000
Saturat ion Volta ge ( m V)
100
100 1000 10000
25oC
125oC
75oC
Collector Current - IC (mA)
Sat urati on Voltage & Col lector Current
10000
25oC
1000
Satur ation Voltag e (mV)
125oC
75oC
BE(sat)
V
@ IC=250I
1000
Saturat ion Volta ge ( m V)
100
100 1000 10000
25oC
125oC
75oC
Collector Current - IC (mA)
ON Voltage & Collcetor Current
10000
25oC
1000
ON Voltage ( m V)
B
125oC
75oC
BE(ON)
V
@ VCE=4V
100
100 1000 10000
Collector Current - IC (mA)
100
100 1000 10000
Collector Current - IC (mA)
HTIP112 HSMC Product Specification
Page 3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002.03.28
Page No. : 3/4
10000
ON Voltage & Collcetor Current
25oC
1000
ON Voltage ( m V)
100
100 1000 10000
100
125oC
Collector Current - IC (mA)
75oC
BE(ON)
V
@ VCE=3V
Capci tance & Reverse-Biased Vol tage
10
VCC=30V,IC=250IB1= -250I
1
Switching Times (us)..
0.1
110
10
PT=1S
(A)
1
C
B2
Tstg
Tf
Ton
Collector Current-IC (A)
Safe Operati ng Area
PT=1mS
Swi tch ing Time & Collector C urrent
Cob
Capacitance (pF)
10
0.1 1 10 100
Rev e r se Biased Voltage ( V)
PT=100mS
0.1
Collector Current-I
0.01
1 10 100
Forwar d Voltage ( V)
HTIP112 HSMC Product Specification
Page 4
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
A
D
B
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002.03.28
Page No. : 4/4
Marking:
E
C
H
TIP
1
12
Date Code
Control Code
H
Style: Pin 1.Base 2.Collector 3.Emitter
G
I
3
M
2
K
N
1
4
OP
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
DIM
Inches Millimeters Inches Millimeters
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
•
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-2563271 2, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP112 HSMC Product Specification
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