Datasheet HT23C010 Datasheet (Holtek Semiconductor Inc)

Page 1

Features

Operating voltage: 2.7V ~5.5V
Low power consumption
Operation: 25mA Max. (VCC=5V) 10mA Max. (V
Standby: 30µA Max. (VCC=5V) 10
Access time:150ns Max. (VCC=5V)
µA Max. (V
250ns Max. (V
CC
CC
=3V)
CC
=3V)
=3V)

General Description

The HT23C010 is a read-only memory with high performance CMOS storage device whose 1024K of memory is arranged into 131072 words by 8 bits.
For applica tion flexibility, the chip enable and output enabl e control pins can be selected a s active high or active low. This flexibility not only allows easy interface with most microproc­essors, but also eliminates bus contention in
HT23C010
CMOS 128K×8-Bit Mask ROM
131072×8 bits of mask ROM
Mask options: chip enable CE/CE/OE1/ OE1B and output enable OE/
TTL compatible inputs and outputs
Tristate outputs
Fully static operation
Package type: 28-pin DIP/SOP 32-pin DIP/SOP/PLCC
multiple bus mi cropro cessor syste ms. An add i­tional feature of the HT23C010 is its ability to enter the standb y mode wh enever the chip en­able (CE/ consumption to below 30
CE) is inactive, thus reducing current
µA. The combination of
these functions makes the chip suitable for high density low power memory applications.
OE/NC

Block Diagram

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Page 2

Pin Assignment

Pin Description

Pin Name I/O Description
HT23C010
A0~A16 I Address input s D0~D7 O Data outputs CE/
CE/OE1/OE1 I Chip enable output enable input VSS I Negative power supply VCC I Positive power supply OE/
OE/NC I Output enable input NC No connection

Operation Truth Table

Mode CE/CE OE/OE A0~A16 D0~D7
Read H/L H/L Valid Data Out Deselect H/L L/H X High Z Standby L/H X X High Z
Note: H=V
, L=VIL, X=VIH or V
IH
IL
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HT23C010

Absolu te Maxim um Ratings *

Supply Voltage.................................–0.3V to 6V Storage Temperature.................–50°C to 125°C
Input Voltage........................–0.3V to V
*Note: These are stress ra tings on ly. Stresses exceeding the range specified under “Abso lute Maxi -
mum Ratings” ma y cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme condition s may affect device reliability.

D.C. Characteristics

Supply voltage: 2.7V~3.6V Ta=–40°C to 85°C
+0.3V Operating Temperature...............–40°C to 85°C
CC
Symbol Pa ra meter
V
CC
I
CC
V
IL
V
IH
V
OL
V
OH
I
LI
I
LO
I
STB1
I
STB2
C
IN
C
OUT
Operating Voltage 2.7 3.6 V Operating Current 3V Input Low Voltage 3V V
Input High Voltage 3V 2.0 V Output Low Voltage 3V IOL=2.1mA 0.4 V Output High Voltage 3V IOH=–0.4mA 2.4 V Input Leakage Current 3V VIN=0 to V Output Leakage Current 3V V
Standby Current 3V
Standby Current 3V Input Capacitance (See note) f=1MHz 10 pF
Output Capacitance (See note) f=1MHz 10 pF
Test Conditions
V
CC
Conditions
O/P Unload, f=5MHz
=0 to V
OUT
CE=V CE=V
0.2V
CE CEVCC-0.2V
IL IH
CC
Min. Typ. Max. Unit
——10mA
0.4 V
SS
——10µA
CC
——10µA ——500µA
——10
CC
CC
V
V
µA
Note: These parameters are periodically sampled but not 100% tested.
Supply voltage: 4.5V~5.5V Ta=–40°C to 85°C
Symbol Pa ra meter
V
CC
I
CC
Operating Voltage 4.5 5.5 V Operating Current 5V
Test Conditions
V
CC
Conditions
O/P Unload, f=5MHz
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Min. Typ. Max. Unit
——25mA
Page 4
HT23C010
Symbol Parameter
V
IL
V
IH
V
OL
V
OH
I
LI
I
LO
I
STB1
I
STB2
C
IN
C
OUT
Input Low Voltage 5V V Input High Voltage 5V 2.2 V Output Low Voltage 5V IOL=3.2mA 0.4 V Output High Voltage 5V IOH=–1mA 2.4 V Input Leakage Current 5V VIN=0 to V Output Leakage Current 5V V
Standby Current 5V
Standby Current 5V Input Capacitance (See note) f=1MHz 10 pF
Output Capacitance (See note) f=1MHz 10 pF
Test Conditions
V
CC
Conditions
=0 to V
OUT
CE=V CE=V
0.2V
CE CEVCC-0.2V
IL IH
CC
Min. Typ. Max. Unit
0.8 V
SS
——10µA
CC
——10µA 1.5 mA
——30
CC
CC
V
V
µA
Note: These parameters are periodically sampled but not 100% tested.

A.C. Characteristics Ta=–40°C to 85°C

V
=2.7V~3.6V VCC=4.5V~5.5V
Symbol Parameter
t
CYC
t
AA
t
ACE
t
AOE
t
OH
t
OD
t
OE
Cycle Time 250 150 ns Address Access Time 250 150 ns Chip Enable Access Time 250 150 ns Output Enable Access Time 150 80 ns Output Hold Time 10 ns Output Disable Time (See Note) 70 ns Output Enable Time (See Note) 10 ns
CC
Min. Max. Min. Max.
Unit
Note: These parameters are periodically sampled but not 100% tested.
A.C. test conditions
Output load: see figure right Input rise and fall time: 10ns Input pulse levels : 0.4V to 2.4V (V
CC
=5V)
Input and output timing reference levels:
0.8V and 2.0V (V
1.5V (V
CC
=3V)
CC
=5V)
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Output load circuit
Page 5

Functional Description

The HT23C010 has two modes, namely data read mode and standby mode, controlled by CE/
CE/OE1/OE1 and OE/OE/NC inputs.
Standby mode The HT23C010 offers lower current consump-
tion, controlled by the chip enable input (CE/
CE). When a low/high level is applied to the
CE/CEB input regardless of the output enable (OE/
OE/NC) states the chip will enter the
standby mode.
Data read mode When both the chip enable (CE/
and the output enable (OE/ the chip is in data read mode. Otherwise, active CE/ in deselect mode. The output will remain i n Hi-Z state.
CE and inactive OE/OE/N C result

Timing Diagrams

Propagation delay due to address (CE/CE/OE1/OE1 and OE/OE are active)
HT23C010
CE/OE1/OE1)
OE/NC) are active,
Propagation delay due to chip and output enable (address valid)
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Page 6

Characteristic Curves

HT23C010
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Page 7
HT23C010
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Page 8

HT23C010 MASK ROM ORDERING SHEET

Custom:
Input Medium: EPROM DISK File (Mail Address: romfile@holtek.com.tw) OTHER
HT23C010
User No. Type/Ref. Name Q’ty Check Sum
Control Pin and Package Form Option: (a) I . 28 Pin Type Pin 20: II. 32 Pin Type Pin 22: Pin 24: (b) Package For m: (6) 32 PLCC
Companion User No. Package Marking : Delivery Date : Q’ty:
CUSTOM CONFIRMED BY :
(1) CE (2) CE (3) OE (4) OE
(1) CE (2) CE (3) OE1 (4) OE1 (1) OE (2) OE (3) NC
(1) Chip Form (2) 28 DIP (3) 28 SOP (4) 32 DIP (5) 32 SOP
Memory Address
Start End
(NAME, DATE, POSITION & CO. CHOP)
HOL TEK CONFI RMED BY:
(SALES) (SALES MANAGER)
8 24th Aug ’98
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