The HT23C010 is a read-only memory with
high performance CMOS storage device whose
1024K of memory is arranged into 131072
words by 8 bits.
For applica tion flexibility, the chip enable and
output enabl e control pins can be selected a s
active high or active low. This flexibility not
only allows easy interface with most microprocessors, but also eliminates bus contention in
HT23C010
CMOS 128K×8-Bit Mask ROM
•
131072×8 bits of mask ROM
•
Mask options: chip enable CE/CE/OE1/
OE1B and output enable OE/
•
TTL compatible inputs and outputs
•
Tristate outputs
•
Fully static operation
•
Package type: 28-pin DIP/SOP
32-pin DIP/SOP/PLCC
multiple bus mi cropro cessor syste ms. An add itional feature of the HT23C010 is its ability to
enter the standb y mode wh enever the chip enable (CE/
consumption to below 30
CE) is inactive, thus reducing current
µA. The combination of
these functions makes the chip suitable for high
density low power memory applications.
OE/NC
Block Diagram
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Pin Assignment
Pin Description
Pin NameI/ODescription
HT23C010
A0~A16IAddress input s
D0~D7OData outputs
CE/
CE/OE1/OE1IChip enable output enable input
VSSINegative power supply
VCCIPositive power supply
OE/
OE/NCIOutput enable input
NC—No connection
Operation Truth Table
ModeCE/CEOE/OEA0~A16D0~D7
ReadH/LH/LValidData Out
DeselectH/LL/HXHigh Z
StandbyL/HXXHigh Z
Note: H=V
, L=VIL, X=VIH or V
IH
IL
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HT23C010
Absolu te Maxim um Ratings *
Supply Voltage.................................–0.3V to 6VStorage Temperature.................–50°C to 125°C
Input Voltage........................–0.3V to V
*Note: These are stress ra tings on ly. Stresses exceeding the range specified under “Abso lute Maxi -
mum Ratings” ma y cause substantial damage to the device. Functional operation of this
device at other conditions beyond those listed in the specification is not implied and prolonged
exposure to extreme condition s may affect device reliability.
D.C. Characteristics
Supply voltage: 2.7V~3.6VTa=–40°C to 85°C
+0.3VOperating Temperature...............–40°C to 85°C
Input High Voltage3V—2.0—V
Output Low Voltage3VIOL=2.1mA——0.4V
Output High Voltage3VIOH=–0.4mA2.4—V
Input Leakage Current3VVIN=0 to V
Output Leakage Current3VV
Standby Current3V
Standby Current3V
Input Capacitance (See note)—f=1MHz——10pF
Output Capacitance (See note)—f=1MHz——10pF
Test Conditions
V
CC
Conditions
O/P Unload,
f=5MHz
=0 to V
OUT
CE=V
CE=V
≤0.2V
CE
CE≥VCC-0.2V
IL
IH
CC
Min.Typ.Max. Unit
——10mA
—0.4V
SS
——10µA
CC
——10µA
——500µA
——10
CC
CC
V
V
µA
Note: These parameters are periodically sampled but not 100% tested.
Supply voltage: 4.5V~5.5VTa=–40°C to 85°C
SymbolPa ra meter
V
CC
I
CC
Operating Voltage——4.5—5.5V
Operating Current5V
Test Conditions
V
CC
Conditions
O/P Unload,
f=5MHz
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Min.Typ.Max. Unit
——25mA
Page 4
HT23C010
SymbolParameter
V
IL
V
IH
V
OL
V
OH
I
LI
I
LO
I
STB1
I
STB2
C
IN
C
OUT
Input Low Voltage5V—V
Input High Voltage5V—2.2—V
Output Low Voltage5VIOL=3.2mA——0.4V
Output High Voltage5VIOH=–1mA2.4—V
Input Leakage Current5VVIN=0 to V
Output Leakage Current5VV
Standby Current5V
Standby Current5V
Input Capacitance (See note)—f=1MHz——10pF
Output Capacitance (See note)—f=1MHz——10pF
Test Conditions
V
CC
Conditions
=0 to V
OUT
CE=V
CE=V
≤0.2V
CE
CE≥VCC-0.2V
IL
IH
CC
Min.Typ.Max. Unit
—0.8V
SS
——10µA
CC
——10µA
——1.5mA
——30
CC
CC
V
V
µA
Note: These parameters are periodically sampled but not 100% tested.
A.C. CharacteristicsTa=–40°C to 85°C
V
=2.7V~3.6VVCC=4.5V~5.5V
SymbolParameter
t
CYC
t
AA
t
ACE
t
AOE
t
OH
t
OD
t
OE
Cycle Time250—150—ns
Address Access Time—250—150ns
Chip Enable Access Time—250—150ns
Output Enable Access Time—150—80ns
Output Hold Time——10—ns
Output Disable Time (See Note)———70ns
Output Enable Time (See Note)——10—ns
CC
Min.Max.Min.Max.
Unit
Note: These parameters are periodically sampled but not 100% tested.
A.C. test conditions
Output load: see figure right
Input rise and fall time: 10ns
Input pulse levels : 0.4V to 2.4V (V
CC
=5V)
Input and output timing reference levels:
0.8V and 2.0V (V
1.5V (V
CC
=3V)
CC
=5V)
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Output load circuit
Page 5
Functional Description
The HT23C010 has two modes, namely data
read mode and standby mode, controlled by
CE/
CE/OE1/OE1 and OE/OE/NC inputs.
•
Standby mode
The HT23C010 offers lower current consump-
tion, controlled by the chip enable input
(CE/
CE). When a low/high level is applied to the
CE/CEB input regardless of the output enable
(OE/
OE/NC) states the chip will enter the
standby mode.
•
Data read mode
When both the chip enable (CE/
and the output enable (OE/
the chip is in data read mode. Otherwise,
active CE/
in deselect mode. The output will remain i n
Hi-Z state.
CE and inactive OE/OE/N C result
Timing Diagrams
•
Propagation delay due to address (CE/CE/OE1/OE1 and OE/OE are active)
HT23C010
CE/OE1/OE1)
OE/NC) are active,
•
Propagation delay due to chip and output enable (address valid)
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Characteristic Curves
HT23C010
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HT23C010
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HT23C010 MASK ROM ORDERING SHEET
Custom:
Input Medium:
EPROM DISK File (Mail Address: romfile@holtek.com.tw) OTHER
HT23C010
User No.Type/Ref. NameQ’tyCheck Sum
Control Pin and Package Form Option:
(a) I . 28 Pin Type Pin 20:
II. 32 Pin Type Pin 22:
Pin 24:
(b) Package For m:
(6) 32 PLCC
Companion User No.
Package Marking :
Delivery Date : Q’ty:
CUSTOM CONFIRMED BY :
(1) CE (2) CE (3) OE (4) OE
(1) CE (2) CE (3) OE1 (4) OE1
(1) OE (2) OE (3) NC