Datasheet HMC314 Datasheet (hittite)

查询HMC314供应商

MICROWAVE CORPORATION

Typical Applications

8

Ideal Broadband Gain Stage for:

• 2.2 - 2.7 GHz MMDS

• 3.5 GHz Wireless Local Loop

• Low Profi le Portable Wireless Devices

• WLAN Systems

Functional Diagram

AMPLIFIERS - SMT

v02.0802

HMC314

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 0.7 - 4.0 GHz

Features

P1dB Output Power: +18 dBm

Output IP3: +29 dBm

Gain: 12 dB

Single Supply: 5V

Ultra Small Package: SOT26

General Description

The HMC314 is a GaAs InGaP Heterojunction Bipo­lar Transistor (HBT) MMIC amplifi er that operates
from a single positive supply. This amplifi er also
incorporates a power down feature. When the “Vpd”
pin is held low, the amplifi er will shut down. The
surface mount SOT26 amplifi er can be used as a
broadband gain stage for wideband applications.
The amplifi er provides 12 dB of gain and +22 dBm
of saturated power while operating from a single
positive +5v supply. The HMC314 is packaged in
an ultra small SOT26 package at a height of only

1.45mm.

Electrical Specifi cations, T

Parameter

Frequency Range 0.7 - 4.0 GHz

Gain 71216dB

Gain Variation Over Temperature 0.015 0.025 dB/°C

Input Return Loss 612 dB

Output Return Loss 2 6 dB

Reverse Isolation 22 30 dB

Output Power for 1 dB Compression (P1dB) @ 1 GHz 15 18 dBm

Saturated Output Power (Psat) @ 1 GHz 19 22 dBm

Output Third Order Intercept (IP3) @ 1 GHz 26 29 dBm

Switching Speed On/Off 60 ns

Supply Current (Icc) 150 mA

Control Voltage (Vpd) 0/5 Volts

Control Current (Ipd) .001/12 mA

= +25° C

A

Vs = +5V, Rbias = 10 Ohm

Units

Min. Typ. Max.

8 - 74

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v02.0802

HMC314

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 0.7 - 4.0 GHz

Gain & Return Loss Gain vs. Temperature

20

15

10

5

0

-5

-10

RESPONSE (dB)

-15

-20

-25
01234567

FREQUENCY (GHz)

Input Return Loss vs. Temperature

0

+ 25 C

-5

+ 65 C

- 40 C

S11
S21
S22

20

15

10

GAIN (dB)

5

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

FREQUENCY (GHz)

Output Return Loss vs. Temperature

0

-4

+ 25 C
+ 65 C

- 40 C

8

AMPLIFIERS - SMT

-10

-15

RETURN LOSS (dB)

-20

-25

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

FREQUENCY (GHz)

Reverse Isolation vs. Temperature

0

-10

-20

-30

ISOLATION (dB)

-40

-50

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

+ 25 C
+ 65 C

- 40 C

FREQUENCY (GHz)

-8

-12

RETURN LOSS (dB)

-16

-20

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

FREQUENCY (GHz)

+ 25 C
+ 65 C

- 40 C

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 75

MICROWAVE CORPORATION

v02.0802

HMC314

GaAs InGaP HBT MMIC DRIVER

8

P1dB vs. Temperature Psat vs. Temperature

25

20

15

10

P1dB (dBm)

5

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

FREQUENCY (GHz)

Power Compression @ 1 GHz

AMPLIFIERS - SMT

25

20

15

Pout (dBm)
Gain (dB)
PAE (%)

+ 25 C
+ 65 C

- 40 C

AMPLIFIER, 0.7 - 4.0 GHz

25

20

15

10

Psat (dBm)

5

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

FREQUENCY (GHz)

Power Compression @ 3 GHz

25

20

15

+ 25 C
+ 65 C

- 40 C

10

5

0

Pout (dBm), Gain (dB), PAE (%)

-5

-8 -6 -4 -2 0 2 4 6 8 10 12 14 16
INPUT POWER (dBm)

40

35

30

25

20

IP3 (dBm)

15

10

5

0

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

10

5

0

Pout (dBm), Gain (dB), PAE (%)

-5

-8 -6 -4 -2 0 2 4 6 8 10 12 14 16

Output IP3 vs. Temperature

+ 25 C
+ 65 C

- 40 C

FREQUENCY (GHz)

INPUT POWER (dBm)

Pout (dBm)
Gain (dB)
PAE (%)

8 - 76

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v02.0802

HMC314

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 0.7 - 4.0 GHz

Absolute Maximum Ratings Truth Table

Collector Bias Voltage (Vcc) +5.0 Vdc

Control Voltage Range (Vpd) -0.2 to 3.5 Vdc

RF Input Power (RFin)(Vs = +5.0 Vdc) +20 dBm

Junction Temperature 150 °C

Continuous Pdiss (T = 65 °C)
(derate 6.57 mW/°C above 65 °C)

Thermal Resistance
(junction to lead)

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +65 °C

0.558 W

152 °C/W

Outline Drawing

Vs Vctl Is Ictl State

5V 5V 150 mA 12 mA On

5V 0V <1 µA <1 µA Power Down

8

AMPLIFIERS - SMT

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

8 - 77

MICROWAVE CORPORATION

v02.0802

HMC314

GaAs InGaP HBT MMIC DRIVER

Application Circuit

8

Note:

AMPLIFIERS - SMT

1. Requires a 10 Ohm resistor (Rbias) in series with the Vcc line and a 160 Ohm resistor in series with the Vpd line.

2. Requires Blocking Capacitors on Pins 1 & 3.

3. Requires bypass capacitors on Vcc and Vpd line as shown.

AMPLIFIER, 0.7 - 4.0 GHz

8 - 78

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

MICROWAVE CORPORATION

v02.0802

HMC314

GaAs InGaP HBT MMIC DRIVER

Evaluation PCB

AMPLIFIER, 0.7 - 4.0 GHz

8

AMPLIFIERS - SMT

List of Material

Item Description

J1, J2 PC Mount SMA Connector

J3, J4, J5 DC Pins

U1 HMC314

PCB* 104198 Evaluation PCB 1.5” x 1.5”

*Circuit Board Material: Roger 4350

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]

Order Online at www.hittite.com

The circuit board used in the fi nal application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads should be con­nected directly to the ground plane similar to that shown. A
suffi cient number of via holes should be used to connect
the top and bottom ground planes. The evaluation circuit
board shown is available from Hittite upon request.

8 - 79