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HCS74T
Data Sheet July 1999 File Number
Radiation Hardened Dual-D Flip-Flop with
Set and Reset
Intersil’sSatellite Applications FlowTM(SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HCS74T is a Radiation Hardened Positive Edge
Triggered Flip-Flop with set and reset.
The HCS74T utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HCS74T are
contained in SMD 5962-95782. A “hot-link” is provided from
our website for downloading.
www.intersil.com/spacedefense/ne wsafc lasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
TEMP.
ORDERING
INFORMATION
5962R9578201TCC HCS74DTR -55 to 125
5962R9578201TXC HCS74KTR -55 to 125
NOTE:
Minimumorderquantity for -T is 150 units through
distribution, or 450 units direct.
PART
NUMBER
RANGE
(oC)
4615.1
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
5
- Gamma Dose (γ) 1 x 10
RAD(Si)
- Latch-Up Free Under Any Conditions, SOS Process
- SEP Effective LET No Upsets: >100 MEV-cm
- Single Event Upset (SEU) Immunity < 2 x 10
2
/mg
-9
Errors/Bit-Day (Typ)
• 3 Micron Radiation Hardened SOS CMOS
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
-VIL = 30% of VCC Max
-V
= 70% of VCC Min
IH
• Input Current Levels Ii ≤ 5µA at V
OL
, V
OH
Pinouts
HCS74T (SBDIP), CDIP2-T14
TOP VIEW
R1
D1
CP1
S1
Q1
Q1
GND
1
2
D1
3
CP1
4
S1N
5
Q1
6
Q1N
7
GND
HCS74T (FLATPACK), CDFP3-F14
TOP VIEW
1R1
2
3
4
5
6
7
14
V
CC
R2N
13
12
D2
11
CP2
10
S2N
Q2
9
8
Q2N
14
13
12
11
10
9
8
V
R2
D2
CP2
S2
Q2
Q2
CC
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
| Copyright © Intersil Corporation 1999
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Functional Diagram
S
D
R
1(13)
4(10)
2(12)
CL
CL
HCS74T
CL
P
N
CL
CL
CL
P
N
CL
P
N
CL
Q
6(8)
Q
P
N
CP
3(11)
CL CL
5(9)
TRUTH TABLE
INPUTS OUTPUTS
SET RESET CP D Q Q
LHXXHL
HLXXLH
LLXXH† H†
HH HHL
HH LLH
HHLXQ0Q0
NOTE: L = Logic Level Low, H = Logic Level High, X = Don’t Care
= Transition from Low to High Level
Q0 = The level of Q before the indicated input conditions were established.
† This configuration is non-stable, that is, it will not persist when set and reset inputs return to their inactive (High) level.
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Die Characteristics
HCS74T
DIE DIMENSIONS:
(2261µm x 2235µm x 533µm ±51µm)
89 x 88 x 21mils ±2mil
METALLIZATION:
Type: Al Si
Thickness: 11k
Å ±1kÅ
SUBSTRATE POTENTIAL:
Unbiased (Silicon on Sapphire)
BACKSIDE FINISH:
Sapphire
Metallization Mask Layout
CP1 (3)
D1
(2)
PASSIVATION:
Type: Silox (S
Thickness: 13k
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
TRANSISTOR COUNT:
192
PROCESS:
CMOS SOS
HCS74T
R1 V
(1) (14)
CC
)
iO2
Å ±2.6kÅ
2
(13)
R2
NC
S1 (4)
Q1 (5)
Q1 (6)
(7)
GND
(12) D2
NC
(11) CP2
(10) S2
(8) (9)
Q2 Q2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However ,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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