Page 1
HA5013
Data Sheet September 1998 File Number 3654.4
Triple, 125MHz Video Amplifier
The HA5013 is a low cost triple amplifier optimized for RGB
video applications and gains between 1 and 10. It is a
current feedback amplifier and thus yields less bandwidth
degradation at high closed loop gains than voltage feedback
amplifiers.
The low differentialgainandphase,0.1dBgainflatness,and
ability to drive two back terminated 75Ω cables, make this
amplifier ideal for demanding video applications.
The current feedback design allows the user to take
advantage of the amplifier’s bandwidth dependency on the
feedback resistor.
The performance of the HA5013 is very similar to the
popular Intersil HA-5020 single video amplifier.
Pinout
HA5013
(PDIP, SOIC)
TOP VIEW
NC
NC
NC
V+
+IN1
-IN1
OUT1
1
2
3
4
5
6
7
+
+
-
14
OUT2
13
-
-IN2
12
+IN2
11
V-
10
+IN3
+
-
9
-IN3
8
OUT3
Features
• Wide Unity Gain Bandwidth . . . . . . . . . . . . . . . . . 125MHz
• Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 475V/µs
• Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . 800µV
• Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.03%
• Differential Phase. . . . . . . . . . . . . . . . . . . . 0.03 Degrees
• Supply Current (Per Amplifier) . . . . . . . . . . . . . . . . 7.5mA
• ESD Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V
• Guaranteed Specifications at ±5V Supplies
• Low Cost
Applications
• PC Add-On Multimedia Boards
• Flash A/D Driver
• Color Image Scanners
• CCD Cameras and Systems
• RGB Cable Driver
• RGB Video Preamp
• PC Video Conferencing
Ordering Information
TEMP.
PART NUMBER
HA5013IP -40 to 85 14 Ld PDIP E14.3
HA5013IB -40 to 85 14 Ld SOIC M14.15
HA5025EVAL High Speed Op Amp DIP Evaluation Board
RANGE (oC) PACKAGE
PKG.
NO.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 1999
Page 2
HA5013
Absolute Maximum Ratings Thermal Information
Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 36V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Output Current (Note 2). . . . . . . . . . . . . . . . Short Circuit Protected
ESD Rating (Note 4)
Human Body Model (Per MIL-STD-883 Method 3015.7) . . . . 2000V
SUPPLY
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
Supply Voltage Range (Typical). . . . . . . . . . . . . . . . . ±4.5V to ±15V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. Output is protected for short circuits to ground. Brief short circuits to ground will not degrade reliability, however, continuous (100% duty cycle)
output current should not exceed 15mA for maximum reliability.
3. Maximum power dissipation, including output load, must be designed to maintain junction temperature below 175oC for die, and below 150oC
for plastic packages. See Application Information section for safe operating area information.
4. The non-inverting input of unused amplifiers must be connected to GND.
Thermal Resistance (Typical, Note 1) θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Maximum Junction Temperature (Die Only, Note 3) . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package, Note 3) . . . 150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Electrical Specifications V
PARAMETER TEST CONDITIONS
INPUT CHARACTERISTICS
Input Offset Voltage (V
Delta VIO Between Channels A Full - 1.2 3.5 mV
Average Input Offset Voltage Drift B Full - 5 - µV/oC
VIO Common Mode Rejection Ratio VCM = ±2.5V (Note 5) A 25 53 - - dB
VIO Power Supply Rejection Ratio ±3.5V ≤ VS≤±6.5V A 25 60 - - dB
Input Common Mode Range VCM = ±2.5V (Note 5) A Full ±2.5 - - V
Non-Inverting Input (+IN) Current A 25 - 3 8 µA
+IN Common Mode Rejection
(+I
BCMR
+IN Power Supply Rejection ±3.5V ≤ VS≤±6.5V A 25 - - 0.1 µA/V
1
=)
+R
IN
IO)
= ±5V, RF = 1kΩ, AV = +1, RL = 400Ω, CL≤10pF, Unless Otherwise Specified
SUPPLY
(NOTE 9)
VCM = ±2.5V (Note 5)
TEST
LEVEL
A 25 - 0.8 3 mV
A Full - - 5 mV
A Full 50 - - dB
A Full 55 - - dB
A Full - - 20 µA
A 25 - - 0.15 µA/V
A Full - - 0.5 µA/V
TEMP.
(oC) MIN TYP MAX UNITS
A Full - - 0.3 µA/V
Inverting Input (-IN) Current A 25, 85 - 4 12 µA
A -40 - 10 30 µA
Delta - IN BIAS Current Between Channels A 25, 85 - 6 15 µA
A -40 - 10 30 µA
2
Page 3
HA5013
Electrical Specifications V
= ±5V, RF = 1kΩ, AV = +1, RL = 400Ω, CL≤10pF, Unless Otherwise Specified (Continued)
SUPPLY
(NOTE 9)
PARAMETER TEST CONDITIONS
TEST
LEVEL
TEMP.
(oC) MIN TYP MAX UNITS
-IN Common Mode Rejection VCM = ±2.5V (Note 5) A 25 - - 0.4 µA/V
A Full - - 1.0 µA/V
-IN Power Supply Rejection ±3.5V ≤ VS≤±6.5V A 25 - - 0.2 µA/V
A Full - - 0.5 µA/V
Input Noise Voltage f = 1kHz B 25 - 4.5 - nV/√Hz
+Input Noise Current f = 1kHz B 25 - 2.5 - pA/√Hz
-Input Noise Current f = 1kHz B 25 - 25.0 - pA/√Hz
TRANSFER CHARACTERISTICS
Transimpedence V
= ±2.5V (Note 11) A 25 1.0 - - MΩ
OUT
A Full 0.85 - - MΩ
Open Loop DC Voltage Gain RL = 400Ω, V
= ±2.5V A 25 70 - - dB
OUT
A Full 65 - - dB
Open Loop DC Voltage Gain RL = 100Ω, V
= ±2.5V A 25 50 - - dB
OUT
A Full 45 - - dB
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 150Ω A25±2.5 ±3.0 - V
A Full ±2.5 ±3.0 - V
Output Current RL = 150Ω B Full ±16.6 ±20.0 - mA
Short Circuit Output Current VIN = ±2.5V, V
= 0V A Full ±40 ±60 - mA
OUT
POWER SUPPLY CHARACTERISTICS
Supply Voltage Range A 25 5 - 15 V
Quiescent Supply Current A Full - 7.5 10 mA/Op Amp
AC CHARACTERISTICS AV = +1
Slew Rate Note 6 B 25 275 350 - V/µs
Full Power Bandwidth (Note 7) B 25 22 28 - MHz
Rise Time (Note 8) V
Fall Time (Note 8) V
Propagation Delay (Note 8) V
= 1V, RL = 100Ω B25-6-ns
OUT
= 1V, RL = 100Ω B25-6-ns
OUT
= 1V, RL = 100Ω B25-6-ns
OUT
Overshoot B 25 - 4.5 - %
-3dB Bandwidth V
= 100mV B 25 - 125 - MHz
OUT
Settling Time To 1%, 2V Output Step B 25 - 50 - ns
Settling Time To 0.25%, 2V Output Step B 25 - 75 - ns
AC CHARACTERISTICS AV = +2, RF = 681Ω
Slew Rate Note 6 B 25 - 475 - V/µs
3
Page 4
HA5013
Electrical Specifications V
= ±5V, RF = 1kΩ, AV = +1, RL = 400Ω, CL≤10pF, Unless Otherwise Specified (Continued)
SUPPLY
(NOTE 9)
PARAMETER TEST CONDITIONS
TEST
LEVEL
TEMP.
(oC) MIN TYP MAX UNITS
Full Power Bandwidth (Note 7) B 25 - 26 - MHz
Rise Time (Note 8) V
Fall Time (Note 8) V
Propagation Delay (Note 8) V
= 1V, RL = 100Ω B25-6-ns
OUT
= 1V, RL = 100Ω B25-6-ns
OUT
= 1V, RL = 100Ω B25-6-ns
OUT
Overshoot B25-12-%
-3dB Bandwidth V
= 100mV B 25 - 95 - MHz
OUT
Settling Time To 1%, 2V Output Step B 25 - 50 - ns
Settling Time To 0.25%, 2V Output Step B 25 - 100 - ns
Gain Flatness 5MHz B 25 - 0.02 - dB
20MHz B 25 - 0.07 - dB
AC CHARACTERISTICS AV = +10, RF = 383Ω
Slew Rate Note 6 B 25 350 475 - V/µs
Full Power Bandwidth (Note 7) B 25 28 38 - MHz
Rise Time (Note 8) V
Fall Time (Note 8) V
Propagation Delay (Note 8) V
= 1V, RL = 100Ω B25-8-ns
OUT
= 1V, RL = 100Ω B25-9-ns
OUT
= 1V, RL = 100Ω B25-9-ns
OUT
Overshoot B 25 - 1.8 - %
-3dB Bandwidth V
= 100mV B 25 - 65 - MHz
OUT
Settling Time To 1%, 2V Output Step B 25 - 75 - ns
To 0.1%, 2V Output Step B 25 - 130 - ns
VIDEO CHARACTERISTICS
Differential Gain RL = 150Ω, (Note 10) B 25 - 0.03 - %
Differential Phase RL = 150Ω, (Note 10) B 25 - 0.03 - Degrees
NOTES:
5. At -40oC Product is tested at VCM = ±2.25V because Short Test Duration does not allow self heating.
6. V
7. .
switches from -2V to +2V, or from +2V to -2V. Specification is from the 25% to 75% points.
OUT
Slew Rate
FPBW
---------------------------- -; V
2πV
PEAK
PEAK
2V==
8. Measured from 10% to 90% points for rise/fall times; from 50% points of input and output for propagation delay.
9. A. Production Tested; B. Typical or Guaranteed Limit based on characterization; C. Design Typical for information only.
10. Measured with a VM700A video tester using an NTC-7 composite VITS.
11. At -40oC Product is tested at V
= ±2.25V because Short Test Duration does not allow self heating.
OUT
4
Page 5
Test Circuits and Waveforms
HA5013
50Ω
+
-
DUT
HP4195
NETWORK
ANALYZER
50Ω
FIGURE 1. TEST CIRCUIT FOR TRANSIMPEDANCE MEASUREMENTS
(NOTE 12)
(NOTE 12)
V
IN
100Ω
50Ω
DUT
+
-
RF, 1kΩ
R
L
100Ω
V
OUT
V
IN
100Ω
50Ω
R
681Ω
I
DUT
+
-
RF, 681Ω
R
L
400Ω
V
OUT
FIGURE 2. SMALL SIGNAL PULSE RESPONSE CIRCUIT FIGURE 3. LARGE SIGNAL PULSE RESPONSE CIRCUIT
NOTE:
12. A series input resistor of ≥100Ω is recommended to limit input currents in case input signals are present before the HA5013 is powered up.
Vertical Scale: V
= 100mV/Div., V
IN
Horizontal Scale: 20ns/Div.
FIGURE 4. SMALL SIGNAL RESPONSE
5
= 100mV/Div.
OUT
Vertical Scale: VIN = 1V/Div., V
OUT
= 1V/Div.
Horizontal Scale: 50ns/Div.
FIGURE 5. LARGE SIGNAL RESPONSE
Page 6
Schematic (One Amplifier of Three)
V+
R
2
800
QP1
6
R
1
60K
Q
N1
R
3
6K
Q
N2
D
1
Q
N3
Q
N4
R
5
2.5K
Q
R
10
820
Q
P5
Q
N5
Q
P2
Q
N6
Q
P4
Q
N7
N8
Q
P6
Q
P7
R
280
R
1K
Q
P8
12
R
1K
Q
P9
11
Q
P10
+IN
Q
N10
R
14
280
13
R
15
400
Q
P11
Q
N12
Q
P12
Q
N13
Q
P13
Q
N14
R
16
400
R
280
-IN
R
19
400
Q
P14
R
17
18
280
Q
P15
C
1
1.4pF
R
140
R
140
20
R
27
200
24
Q
P16
R
28
Q
P19
R
29
9.5
R
31
5
Q
P20
20
Q
P17
Q
R
280
22
C
2
1.4pF
Q
N16
R
140
N17
R
25
20
Q
N15
R
21
140
25
Q
R
400
N18
R
23
26
200
Q
N19
Q
N21
R
32
5
R
30
7
HA5013
OUT
R
800
4
R
800
33
R
820
9
Q
N9
Q
N11
V-
Page 7
HA5013
Application Information
Optimum Feedback Resistor
The plots of inverting and non-inverting frequency response,
see Figure 8 and Figure 9 in the typical performance section,
illustrate the performance of the HA5013 in various closed loop
gain configurations. Although the bandwidth dependency on
closed loop gain isn’t as severe as that of a v oltage f eedbac k
amplifier,there can bean appreciable decreasein bandwidth at
higher gains. This decrease may be minimized b y taking
advantage of the current feedbac k amplifier’s unique
relationship between bandwidth and R
amplifiers require a feedback resistor, ev en f or unity gain
applications, and R
, in conjunction with the internal
F
compensation capacitor, sets the dominant pole of the
frequency response. Thus, the amplifier’ s bandwidth is
inversely proportional to R
for a 1000Ω R
at a gain of +1. Decreasing RF in a unity gain
F
. The HA5013 design is optimized
F
application decreases stability, resulting in excessiv e peaking
and overshoot. At higher gains the amplifier is more stable , so
R
can be decreased in a trade-off of stability for bandwidth.
F
The table below lists recommended RF values for various
gains, and the expected bandwidth.
GAIN
(ACL)R
-1 750 100
+1 1000 125
+2 68f1 95
+5 1000 52
+10 383 65
-10 750 22
F
(Ω)
. All current feedback
F
BANDWIDTH
(MHz)
as short as possible to minimize the capacitance from this
node to ground.
Driving Capacitive Loads
Capacitive loads will degrade the amplifier’s phase margin
resulting in frequency response peaking and possible
oscillations. In most cases the oscillation can be avoided by
placing an isolation resistor (R) in series with the output as
shown in Figure 6.
V
IN
FIGURE 6. PLACEMENT OF THE OUTPUT ISOLATION
100Ω
R
T
R
I
RESISTOR, R
+
R
-
R
F
V
OUT
C
L
The selection criteria for the isolation resistor is highly
dependent on the load, but 27Ω has been determined to be
a good starting value.
Power Dissipation Considerations
Due to the high supply current inherent in triple amplifiers,
care must be taken to insure that the maximum junction
temperature (T
exceeded. Figure 7 shows the maximum ambient
temperature versus supply voltage for the available package
styles (PDIP, SOIC). At V
packagestyles may be operated overthe full industrial range
o
of -40
C to 85oC. It is recommended that thermal
calculations, which take into account output power, be
performed by the designer.
, see Absolute Maximum Ratings) is not
J
= ±5V quiescent operation both
S
PC Board Layout
The frequency response of this amplifier depends greatly on
the amount of care taken in designing the PC board. The
use of low inductance components such as chip resistors
and chip capacitors is strongly recommended. If leaded
components are used the leads must be kept short
especially for the power supply decoupling components and
those components connected to the inverting input.
Attention must be given to decoupling the power supplies. A
large value (10µF) tantalum or electrolytic capacitor in
parallel with a small value (0.1µF) chip capacitor works well
in most cases.
A ground plane is strongly recommended to control noise.
Care must also be taken to minimize the capacitance to
ground seen by the amplifier’s inverting input (-IN). The
larger this capacitance,the worse the gain peaking, resulting
in pulse overshoot and possible instability. It is
recommended that the ground plane be removed under
traces connected to -IN, and that connections to -IN be kept
7
130
120
C)
o
110
100
90
80
70
60
50
40
30
MAX. AMBIENT TEMPERATURE (
20
10
5 7 9 11 13 15
FIGURE 7. MAXIMUM OPERATING AMBIENT TEMPERATURE
vs SUPPLY VOLTAGE
PDIP
SOIC
SUPPLY VOLTAGE (±V)
Page 8
HA5013
Typical Performance Curves V
= ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
SUPPLY
Unless Otherwise Specified
5
V
= 0.2V
OUT
4
CL = 10pF
3
2
1
0
-1
-2
NORMALIZED GAIN (dB)
-3
-4
-5
2 10 100 200
P-P
AV = 2, RF = 681Ω
AV = 5, RF = 1kΩ
AV = 10, RF = 383Ω
FREQUENCY (MHz)
AV = +1, RF = 1kΩ
5
V
= 0.2V
OUT
4
CL = 10pF
= 750Ω
R
F
3
2
1
0
-1
-2
NORMALIZED GAIN (dB)
-3
-4
-5
AV = -10
2 10 100 200
P-P
AV = -5
FREQUENCY (MHz)
FIGURE 8. NON-INVERTING FREQUENCY RESPONSE FIGURE 9. INVERTING FREQUENCY RESPONSE
0
-45
-90
AV = -1, RF = 750Ω
-135
-100
-225
-270
-315
V
OUT
-360
CL = 10pF
NON-INVERTING PHASE (DEGREES)
2 10 100 200
AV = +10, RF = 383Ω
= 0.2V
P-P
FREQUENCY (MHz)
AV = -10, RF = 750Ω
AV = +1, RF = 1kΩ
+180
+135
+90
+45
0
-45
-90
-135
INVERTING PHASE (DEGREES)
-180
140
130
120 10
-3dB BANDWIDTH (MHz)
GAIN PEAKING
500 700 900 1100 1300 1500
-3dB BANDWIDTH
FEEDBACK RESISTOR (Ω)
V
OUT
CL = 10pF
AV = +1
= 0.2V
P-P
AV = -1
AV = -2
5
GAIN PEAKING (dB)
0
FIGURE 10. PHASE RESPONSE AS A FUNCTION OF
FREQUENCY
100
95
-3dB BANDWIDTH
90
-3dB BANDWIDTH (MHz)
GAIN PEAKING
350 500 650 800 950 1100
FEEDBACK RESISTOR (Ω)
V
= 0.2V
OUT
CL = 10pF
= +2
A
V
P-P
10
5
0
FIGURE 12. BANDWIDTH AND GAIN PEAKING vs FEEDBACK
RESISTANCE
8
FIGURE 11. BANDWIDTH AND GAIN PEAKING vs FEEDBACK
130
120
110
100
-3dB BANDWIDTH (MHz)
GAIN PEAKING (dB)
FIGURE 13. BANDWIDTH AND GAIN PEAKING vs LOAD
RESISTANCE
-3dB BANDWIDTH
V
90
80
0 200 400 600 800 1000
GAIN PEAKING
LOAD RESISTOR (Ω)
= 0.2V
OUT
CL = 10pF
= +1
A
V
RESISTANCE
P-P
6
4
2
GAIN PEAKING (dB)
0
Page 9
HA5013
Typical Performance Curves V
SUPPLY
Unless Otherwise Specified (Continued)
80
60
40
-3dB BANDWIDTH (MHz)
20
0
200 350 500 650 800 950
FEEDBACK RESISTOR (Ω)
V
OUT
CL = 10pF
A
= +10
V
FIGURE 14. BANDWIDTH vs FEEDBACK RESISTANCE
0.10
FREQUENCY = 3.58MHz
0.08
RL = 75Ω
= ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
16
V
= 0.1V
= 0.2V
P-P
OUT
CL = 10pF
12
6
OVERSHOOT (%)
0
0 200 400 600 800 1000
P-P
V
SUPPLY
FIGURE 15. SMALL SIGNAL OVERSHOOT vs LOAD
RESISTANCE
0.08
FREQUENCY = 3.58MHz
0.06
V
= ±5V, AV = +2
SUPPL Y
V
SUPPLY
V
= ±5V, AV = +1
SUPPLY
= ±15V, AV = +1
LOAD RESISTANCE (Ω)
= ±15V, AV = +2
0.06
0.04
DIFFERENTIAL GAIN (%)
0.02
0.00
3 5 7 9 11 13 15
SUPPLY VOLTAGE (±V)
RL = 150Ω
RL = 1kΩ
0.04
0.02
DIFFERENTIAL PHASE (DEGREES)
0.00
3 5 7 9 11 13 15
RL = 150Ω
RL = 75Ω
RL = 1kΩ
SUPPLY VOLTAGE (±V)
FIGURE 16. DIFFERENTIAL GAIN vs SUPPLY VOLTAGE FIGURE 17. DIFFERENTIAL PHASE vs SUPPLY VOLTAGE
-40
V
= 2.0V
OUT
CL = 30pF
-50
-60
-70
HD2
DISTORTION (dBc)
-80
-90
0.3 1 10
P-P
HD2
3RD ORDER IMD
HD3
FREQUENCY (MHz)
HD3
REJECTION RATIO (dB)
AV = +1
0
-10
-20
-30
-40
-50
-60
-70
-80
0.001 0.01 0.1 1 10 30
CMRR
NEGATIVE PSRR
POSITIVE PSRR
FREQUENCY (MHz)
FIGURE 18. DISTORTION vs FREQUENCY
9
FIGURE 19. REJECTION RATIOS vs FREQUENCY
Page 10
HA5013
Typical Performance Curves V
= ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
SUPPLY
Unless Otherwise Specified (Continued)
8.0
7.5
7.0
6.5
PROPAGATION DELAY (ns)
6.0
RL = 100Ω
= 1.0V
V
OUT
AV = +1
-50 -25 0 25 50 75 100 125
P-P
TEMPERATURE (oC)
12
R
= 100Ω
LOAD
V
= 1.0V
OUT
10
8
6
PROPAGATION DELAY (ns)
4
3 5 7 9 11 13 15
P-P
AV = +10, RF = 383Ω
AV = +2, RF = 681Ω
AV = +1, RF = 1kΩ
SUPPLY VOLTAGE (±V)
FIGURE 20. PROPAGATION DELAY vs TEMPERATURE FIGURE 21. PROPAGATION DELAY vs SUPPLY VOLTAGE
500
V
= 2V
450
400
350
300
250
SLEW RATE (V/µs)
200
150
100
OUT
-50 -25 0 25 50 75 100 125
P-P
+ SLEW RATE
- SLEW RATE
TEMPERATURE (oC)
0.8
V
= 0.2V
OUT
0.6
CL = 10pF
0.4
0.2
0
-0.2
-0.4
-0.6
NORMALIZED GAIN (dB)
AV = +1, RF = 1kΩ
-0.8
-1.0
-1.2
51015202530
P-P
AV= +2, RF = 681Ω
AV= +5, RF = 1kΩ
AV = +10, RF = 383Ω
FREQUENCY (MHz)
FIGURE 22. SLEW RATE vs TEMPERATURE
0.8
V
= 0.2V
OUT
0.6
CL = 10pF
RF = 750Ω
0.4
0.2
0
-0.2
-0.4
-0.6
NORMALIZED GAIN (dB)
-0.8
-1.0
AV = -10
-1.2
51015202530
P-P
AV = -1
AV = -5
AV = -2
FREQUENCY (MHz)
FIGURE 23. NON-INVERTING GAIN FLATNESSvs FREQUENCY
100
AV = +10, RF = 383Ω
-INPUT NOISE CURRENT
+INPUT NOISE CURRENT
INPUT NOISE VOLTAGE
0.01 0.1 1 10 100
FREQUENCY (kHz)
VOLTAGE NOISE (nV/√Hz)
80
60
40
20
0
FIGURE 24. INVERTING GAIN FLATNESS vs FREQUENCY FIGURE 25. INPUT NOISE CHARACTERISTICS
10
1000
800
600
400
200
0
Hz)
CURRENT NOISE (pA/√
Page 11
HA5013
Typical Performance Curves V
SUPPLY
Unless Otherwise Specified (Continued)
1.5
1.0
(mV)
IO
V
0.5
0.0
-60 -40 -20 0 40 60 80 100 120 14020
TEMPERATURE (oC)
FIGURE 26. INPUT OFFSET VOLTAGE vs TEMPERATURE
22
20
= ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
2
0
-2
BIAS CURRENT (µA)
-4
-60 -40 -20 0 40 60 80 100 120 14020
TEMPERATURE (oC)
FIGURE 27. +INPUT BIAS CURRENT vs TEMPERATURE
4000
3000
18
BIAS CURRENT (µA)
16
-60 -40 -20 0 40 60 80 100 120 14020
TEMPERATURE (
o
C)
FIGURE 28. -INPUT BIAS CURRENT vs TEMPERATURE
25
125oC
20
55oC
15
(mA)
CC
I
10
25oC
5
3
4 5 6 7 8 9 10 11 12 13 14 15
SUPPLY VOLTAGE (±V)
2000
TRANSIMPEDANCE (kΩ)
1000
-60 -40 -20 0 40 60 80 100 120 14020
TEMPERATURE (oC)
FIGURE 29. TRANSIMPEDANCE vs TEMPERATURE
74
CMRR
+PSRR
-PSRR
TEMPERATURE (
o
C)
72
70
68
66
64
62
REJECTION RATIO (dB)
60
58
-100 -50 0 50 100 150
200 250
FIGURE 30. SUPPLY CURRENT vs SUPPLY VOLTAGE
11
FIGURE 31. REJECTION RATIO vs TEMPERATURE
Page 12
HA5013
Typical Performance Curves V
= ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
SUPPLY
Unless Otherwise Specified (Continued)
40
30
20
10
SUPPLY CURRENT (mA)
0
+5V
10 2 3 4 5 6 7 8 9 10 11 12 13 14 15
DISABLE INPUT VOLTAGE (V)
+10V +15V
FIGURE 32. SUPPLY CURRENT vs DISABLE INPUT VOLTAGE
30
VS = ±15V
20
)
P-P
(V
OUT
V
10
0
0.01 0.10 1.00 10.00
LOAD RESISTANCE (kΩ)
VS = ±10V
VS = ±4.5V
4.0
3.8
OUTPUT SWING (V)
3.6
-60 -40 -20 0 40 60 80 100 120 14020
TEMPERATURE (oC)
FIGURE 33. OUTPUT SWING vs TEMPERATURE
1.2
1.1
(mV)
1.0
IO
V
0.9
0.8
-60 -40 -20 0 40 60 80 100 120 140
20
TEMPERATURE (oC)
FIGURE 34. OUTPUT SWING vs LOAD RESISTANCE
1.5
1.0
0.5
∆BIAS CURRENT (µA)
0.0
-60 -40 -20
0
TEMPERATURE (
40 60 80 100 120 14020
o
C)
FIGURE 36. INPUT BIAS CURRENT CHANGE BETWEEN
CHANNELS vs TEMPERATURE
12
FIGURE 35. INPUT OFFSET VOLTAGE CHANGE BETWEEN
CHANNELS vs TEMPERATURE
-30
AV = +1
V
= 2V
-40
-50
-60
SEPARATION (dB)
-70
-80
OUT
0.1 1 10 30
P-P
FREQUENCY (MHz)
FIGURE 37. CHANNEL SEPARATION vs FREQUENCY
Page 13
HA5013
Typical Performance Curves V
= ±5V, AV = +1, RF = 1kΩ, RL = 400Ω, TA = 25oC,
SUPPLY
Unless Otherwise Specified (Continued)
DISABLE = 0V
0
= 5V
V
IN
P-P
RF = 750Ω
-10
-20
-30
-40
-50
-60
FEEDTHROUGH (dB)
-70
-80
0.1 1 10 20
FREQUENCY (MHz)
10
1
0.1
0.01
0.001
TRANSIMPEDANCE (MΩ)
0.001 0.01 0.1 1 10 100
FREQUENCY (MHz)
RL = 100Ω
FIGURE 38. DISABLE FEEDTHROUGH vs FREQUENCY FIGURE 39. TRANSIMPEDANCE vs FREQUENCY
10
1
0.1
0.01
0.001
TRANSIMPEDANCE (MΩ)
0.001 0.01 0.1 1 10 100
FREQUENCY (MHz)
RL = 400Ω
180
135
90
45
0
-45
-90
PHASE ANGLE (DEGREES)
-135
180
135
90
45
0
-45
-90
PHASE ANGLE (DEGREES)
-135
13
FIGURE 40. TRANSIMPEDENCE vs FREQUENCY
Page 14
Die Characteristics
HA5013
DIE DIMENSIONS:
2010µm x 3130µm x 483µm
METALLIZATION:
Type: Metal 1: AlCu (1%)
Thickness: Metal 1: 8k
Å ±0.4kÅ
Type: Metal 2: AlCu (1%)
Thickness: Metal 2: 16k
Å ±0.8kÅ
SUBSTRATE POTENTIAL
Unbiased
Metallization Mask Layout
NC
NC NC
HA5013
PASSIVATION:
Type: Nitride
Thickness: 4k
Å ±0.4kÅ
TRANSISTOR COUNT:
248
PROCESS:
High Frequency Bipolar Dielectric Isolation
OUT2 -IN2
+IN2
V+
+IN1
-IN3OUT3OUT1-IN1
V-
+IN3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
14
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