Datasheet FS10KM-2 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS10KM-2

HIGH-SPEED SWITCHING USE

FS10KM-2

¡10V DRIVE

DSS ................................................................................100V

¡V ¡r

DS (ON) (MAX) ..............................................................0.23Ω

D ......................................................................................... 10A

¡I ¡Integrated Fast Recovery Diode (TYP.)

iso ................................................................................ 2000V

¡V

...........100ns

OUTLINE DRAWING Dimensions in mm

10 ± 0.3 2.8 ± 0.2

3 ± 0.33.6 ± 0.3

15 ± 0.314 ± 0.5

123

w

q

e

6.5 ± 0.3

f 3.2 ± 0.2

1.1 ± 0.2

0.75 ± 0.15

2.54 ± 0.252.54 ± 0.25

2.6 ± 0.2

q GATE w DRAIN e SOURCE

E

0.75 ± 0.15

4.5 ± 0.2

TO-220FN

APPLICATION

Motor control, Lamp control, Solenoid control DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso

—

Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight

Parameter Conditions Ratings Unit

GS = 0V

V

DS = 0V

V

L = 100µH

AC for 1minute, Terminal to case Typical value

100 ±20

10 40 10 10 40

20 –55 ~ +150 –55 ~ +150

2000

2.0

V V A A A A A

W

°C °C

V g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

D = 1mA, VGS = 0V

V

(BR) DSS

IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs

iss

C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr

Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time

I

GS = ±20V, VDS = 0V

V

DS = 100V, VGS = 0V

V

D = 1mA, VDS = 10V

I

D = 5A, VGS = 10V

I

D = 5A, VGS = 10V

I

D = 5A, VDS = 5V

I

V

DS = 10V, VGS = 0V, f = 1MHz

DD = 50V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω

V

I

S = 5A, VGS = 0V

Channel to case

S = 10A, dis/dt = –100A/µs

I

MITSUBISHI Nch POWER MOSFET

FS10KM-2

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

100

— —

2.0 — — — — — — — — — — — — —

— — —

3.0

0.16

0.80

9.0 600 125

40 18 20 30 18

1.0

—

100

—

±0.1

0.1

4.0

0.23

1.15 — — — — — — — —

1.5

6.25 —

V

µA

mA

V

Ω

V

S pF pF pF ns ns ns ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

40

(W)

32

D

24

16

8

POWER DISSIPATION P

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

PD = 20W

20

16

(A)

D

12

(TYPICAL)

TC = 25°C Pulse Test

C

(°C)

VGS = 20V 10V

7V

6V

MAXIMUM SAFE OPERATING AREA

5 3

2

1

10

(A)

7

D

5 3

2

0

10

7 5

3 2

–1

10

DRAIN CURRENT I

7

TC = 25°C

5

Single Pulse

3 2

210

0

357 2 10

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

10

TC = 25°C Pulse Test

8

(A)

D

6

tw = 10ms

100ms

1ms 10ms DC

1

357 2

DS

(V)

VGS = 20V 10V 7V

6V

2

8

4

DRAIN CURRENT I

0

0 1.0 2.0 3.0 4.0 5.0

DRAIN-SOURCE VOLTAGE VDS (V)

5V

4

2

DRAIN CURRENT I

0

0 0.4 0.8 1.2 1.6 2.0

DRAIN-SOURCE VOLTAGE VDS (V)

5V

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS10KM-2

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

5.0

4.0

(V)

3.0

DS (ON)

2.0

VOLTAGE V

1.0

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

20

16

(A)

D

12

8

4

DRAIN CURRENT I

0

0 4 8 12 16 20

TC = 25°C Pulse Test

ID = 15A

10A

GS

(V)

TC = 25°C

DS

= 10V

V Pulse Test

5A

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

0.5

TC = 25°C Pulse Test

0.4

(Ω)

0.3

DS (ON)

0.2

0.1

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–1

10

210

0

357 2 10

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

2

10

VDS = 5V

7

Pulse Test

5 4

(S)

3



fs

2

1

10

7 5

4 3

ADMITTANCE y

FORWARD TRANSFER

2

0

10

0

10

23457 10

TC = 25°C

75°C

125°C

VGS = 10V

20V

1

357 2 10

1

10

357

D

(A)

23457

2

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

4

10

7 5

3 2

3

10

7 5

3 2

2

10

CAPACITANCE

7

Ciss, Coss, Crss (pF)

5

Tch = 25°C

3

f = 1MH

2

VGS = 0V

1

10

357 2 10

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

Z

0

1

357 2 10

GS

Ciss

Coss

Crss

357 32

DS

(V)

2

(V)

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

2

10

7 5

4

t

3 2

1

10

7 5

4 3

SWITCHING TIME (ns)

d(off)

t

d(on)

t

f

t

r

2

0

10

0

10

23457 10

DRAIN CURRENT ID (A)

10

1

Tch = 25°C V V R

D

(A)

DD

= 50V

GS

= 10V

GEN

= RGS = 50Ω

23457

2

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS10KM-2

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

Tch = 25°C

(V)

I

D

16

12

= 10A

VDS = 80V

50V 20V

GS

8

4

GATE-SOURCE VOLTAGE V

0

0 4 8 12 16 20

g

GATE CHARGE Q

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

10

1

VGS = 10V

7

I

5

Pulse Test

4

D

= 1/2I

(TYPICAL)

D

3 2

0

10

7 5

4 3

2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

40

VGS = 0V Pulse Test

32

(A)

S

24

16

TC = 125°C

75°C

8

SOURCE CURRENT I

0

25°C

0 0.4 0.8 1.2 1.6 2.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0

VDS = 10V I

D

= 1mA

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

SD

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

(BR) DSS

1.4

CHANNEL TEMPERATURE

(TYPICAL)

VGS = 0V

D

= 1mA

I

1.2

1.0

0.8

0.6

0.4 –50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

2

10

7

(ch–c)

5

th

3 2

1

10

D = 1.0

7 5

0.5

3

0.2

2

0.1

0

10

7

10

5 3

2

–1

10

0.05

0.02

0.01 Single Pulse

–4

23 57 23 57 23 57 23 57

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

–3

10

–2

PULSE WIDTH t

10

–1

10023 57

w

(s)

P

DM

tw

=

D

T

tw T

10123 57

2

10

Feb.1999