Datasheet FS10AS-2 Datasheet (POWEREX)

MITSUBISHI Nch POWER MOSFET

FS10AS-2

HIGH-SPEED SWITCHING USE

FS10AS-2

¡10V DRIVE ¡V

DSS ................................................................................100V

DS (ON) (MAX) ..............................................................0.23Ω

¡r

D ......................................................................................... 10A

¡I ¡Integrated Fast Recovery Diode (TYP.)

...........100ns

OUTLINE DRAWING Dimensions in mm

0.9MAX.

2.3

q

6.5

5.0 ± 0.2

r

1.0

1.0MAX.

2.3

qwe

wr

e

10MAX.

5.5 ± 0.2

2.3MIN. 1.5 ± 0.2

q GATE w DRAIN e SOURCE r DRAIN

0.5 ± 0.1

A

0.5 ± 0.2

0.8

MP-3

APPLICATION

Motor control, Lamp control, Solenoid control DC-DC converter, etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg

—

Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight

Parameter Conditions Ratings Unit

GS = 0V

V

DS = 0V

V

L = 100µH

Typical value

100 ±20

10 40 10 10 40

30 –55 ~ +150 –55 ~ +150

0.26

V V A A A A A

W

°C °C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

D = 1mA, VGS = 0V

V

(BR) DSS

IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs

iss

C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr

Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time

I

GS = ±20V, VDS = 0V

V

DS = 100V, VGS = 0V

V

D = 1mA, VDS = 10V

I

D = 5A, VGS = 10V

I

D = 5A, VGS = 10V

I

D = 5A, VDS = 5V

I

V

DS = 10V, VGS = 0V, f = 1MHz

DD = 50V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω

V

I

S = 5A, VGS = 0V

Channel to case

S = 10A, dis/dt = –100A/µs

I

MITSUBISHI Nch POWER MOSFET

FS10AS-2

HIGH-SPEED SWITCHING USE

Limits Min. Typ. Max. 100

— —

2.0 — — — — — — — — — — — — —

— — —

3.0

0.16

0.80

9.0 600 125

40 18 20 30 18

1.0

—

100

—

±0.1

0.1

4.0

0.23

1.15 — — — — — — — —

1.5

4.17 —

V

µA

mA

V

Ω

V

S pF pF pF ns ns ns ns

V

°C/W

ns

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

50

(W)

40

D

30

20

10

POWER DISSIPATION P

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

20

TC = 25°C Pulse Test

16

(A)

D

12

(TYPICAL)

PD = 30W

C

(°C)

VGS = 20V 10V

7V

6V

MAXIMUM SAFE OPERATING AREA

5 3

2

1

10

(A)

7

D

5 3

2

0

10

7 5

3 2

–1

10

DRAIN CURRENT I

7

TC = 25°C

5

Single Pulse

3 2

210

0

357 2 10

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

10

TC = 25°C Pulse Test

8

(A)

D

6

tw = 10ms

100ms

1ms 10ms

DC

1

357 2

DS

(V)

VGS = 20V 10V 7V

6V

2

8

4

DRAIN CURRENT I

0

0 1.0 2.0 3.0 4.0 5.0

DRAIN-SOURCE VOLTAGE VDS (V)

5V

4

2

DRAIN CURRENT I

0

0 0.4 0.8 1.2 1.6 2.0

DRAIN-SOURCE VOLTAGE VDS (V)

5V

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS10AS-2

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

5.0

4.0

(V)

3.0

DS (ON)

2.0

VOLTAGE V

1.0

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

20

16

(A)

D

12

8

4

DRAIN CURRENT I

0

0 4 8 12 16 20

TC = 25°C Pulse Test

ID = 15A

10A

GS

(V)

TC = 25°C

DS

= 10V

V Pulse Test

5A

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

0.5

TC = 25°C Pulse Test

0.4

(Ω)

0.3

DS (ON)

0.2

0.1

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–1

10

210

0

357 2 10

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

2

10

VDS = 5V

7

Pulse Test

5 4

(S)

3



fs

2

1

10

7 5

4 3

ADMITTANCE y

FORWARD TRANSFER

2

0

10

0

10

23457 10

TC = 25°C

75°C

125°C

VGS = 10V

20V

1

357 2 10

1

10

357

D

(A)

23457

2

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

4

10

7 5

3 2

3

10

7 5

3 2

2

10

CAPACITANCE

7

Ciss, Coss, Crss (pF)

5

Tch = 25°C

3

f = 1MH

2

VGS = 0V

1

10

357 2 10

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

Z

0

1

357 2 10

GS

Ciss

Coss

Crss

357 32

DS

(V)

2

(V)

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

2

10

7 5

4

t

3 2

10

7 5

4 3

SWITCHING TIME (ns)

d(off)

t

d(on)

t

f

1

t

r

2

0

10

0

10

23457 10

DRAIN CURRENT ID (A)

Tch = 25°C V V R

1

10

D

(A)

DD

= 50V

GS

= 10V

GEN

= RGS = 50Ω

23457

2

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS10AS-2

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

Tch = 25°C

(V)

I

D

16

12

= 10A

VDS = 80V

50V 20V

GS

8

4

GATE-SOURCE VOLTAGE V

0

0 4 8 12 16 20

g

GATE CHARGE Q

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

10

1

VGS = 10V

7

I

5

Pulse Test

4

D

= 1/2I

(TYPICAL)

D

3 2

0

10

7 5

4 3

2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

40

VGS = 0V Pulse Test

32

(A)

S

24

16

TC = 125°C

75°C

8

SOURCE CURRENT I

0

25°C

0 0.4 0.8 1.2 1.6 2.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0

VDS = 10V I

D

= 1mA

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

SD

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

(BR) DSS

1.4

CHANNEL TEMPERATURE

(TYPICAL)

VGS = 0V

D

= 1mA

I

1.2

1.0

0.8

0.6

0.4 –50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

2

10

7

(ch–c)

5

th

3 2

1

10

7

D = 1.0

5

0.5

3 2

0.2

0

10

7 5

3 2

–1

–4

10

0.1

0.05

0.02

0.01 Single Pulse

23 57 23 57 23 57 23 57

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

–3

10

–2

PULSE WIDTH t

10

–1

P

10023 57

w

(s)

DM

tw

=

D

T

tw

T

10123 57

2

10

Feb.1999