Datasheet FDC608PZ Datasheet (Fairchild)

FDC608PZ

June 2006

FDC608PZ

P-Channel 2.5V Specified PowerTrench® MOSFET

General Description

This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.

These devices are well suited for battery power
applications: load switching and power management,
battery power circuits, and DC/DC conversions.

S

D

D

G

SuperSOT -6

TM

D

D

Features

• –5.8 A, –20 V. R
R

• Low Gate Charge

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOT
smaller than standard SO

= 30 mΩ @ VGS = –4.5 V

DS(ON)

= 43 mΩ @ VGS = –2.5 V

DS(ON)

TM

–6 package: small footprint (72%

–8) low profile (1mm thick).

1
2
3

6
5
4

tm

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

Drain Current – Continuous (Note 1a) –5.8 ID
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 PD

TJ, T

Operating and Storage Junction Temperature Range –55 to +150

STG

(Note 1b)

±12

0.8

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a) 78

(Note 1) 30

°C/W
°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.608Z FDC608PZ 7’’ 8mm 3000 units

©2006 Fairchild Semiconductor Corporation

FDC608PZ Rev B (W)

V
A

W

°C

FDC608PZ

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

Gate–Body Leakage

GSS

Breakdown Voltage Temperature
Coefficient

J

= 0 V, ID = –250 µA

V

GS

I

= –250 µA,Referenced to 25°C

D

= ±12 V, VDS = 0 V

V

GS

–20 V

–10

mV/°C

µA

±10 µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A

D(on)

= VGS, ID = –250 µA

V

DS

I

= –250 µA,Referenced to 25°C

D

VGS = –4.5V, ID = –5.8 A

= –2.5V, ID = –5.0 A

V

GS

= –4.5V,ID = –5.8A,TJ=125°C

V

GS

gFS Forward Transconductance VDS = –10 V, ID = –5.8 A 22 S

–0.4 –1.0 –1.5 V

3

26

38
35

30
43

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 1330 pF

iss

C

Output Capacitance 270 pF

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 12

V

= –10 V, V

DS

f = 1.0 MHz

= 0 V,

GS

230 pF

Ω

Switching Characteristics (Note 2)

t

Turn–On Delay Time 13 24 ns

d(on)

tr Turn–On Rise Time 8 16 ns
t

Turn–Off Delay Time 91 145 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 17 23 nC
Qgs Gate–Source Charge 3 nC
Qgd Gate–Drain Charge

V

= –10 V, ID = –1 A,

DD

= –4.5 V, R

V

GS

= –10 V, ID = –5.8 A,

V

DS

= –4.5 V

V

GS

GEN

= 6 Ω

60 96 ns

6 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD Drain–Source Diode Forward

Voltage

trr Diode Reverse Recovery Time IF = –5.8 A, diF/dt = 100A/µs 40 60 ns
Qrr Diode Reverse Recovery Charge IF = –5.8 A, diF/dt = 100A/µs 15 23 nC

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain

θJA

pins. R

a. 78°C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board.
b. 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V

FDC608PZ Rev B (W)

Typical Characteristics

FDC608PZ

20

VGS = -4.5V

-3.5V

15

10

, DRAIN CURRENT (A)

D

5

-I

0

0 0.5 1 1.5 2 2.5 3

-V

-2.5V

-3.0V

, DRAIN TO SOURCE VOLTAGE (V)

DS

-2.0V

2.6
VGS= -2.0V

2.2

1.8

, NORMALIZED

DS(ON)

R

DRAIN-SOURCE ON-RESISTANCE

-2.5V

1.4

1

0.6

0 5 10 15 20

-3.0V

-I

-3.5V

, DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.5

ID = -5.8A

V

= -4.5V

GS

1.3

1.1

, NORMALIZED

DS(ON)

R

0.9

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation with

Temperature.

0.1

0.08

0.06

, ON-RESISTANCE (OHM)

0.04

DS(ON)

R

TA = 25oC

0.02
0246810

TA = 125oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

-4.0V

-4.5V

ID = -2.9A

20

VDS = -5V

15

10

, DRAIN CURRENT (A)

D

5

-I

0

0 0.5 1 1.5 2 2.5 3

TA = -55oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

125oC

25oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

100

VGS = 0V

10

1

0.1

TA = 125oC

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V

25oC

-55oC

BODY DIODE FORWARD VOLTAGE (V)

SD,

with Source Current and Temperature.

FDC608PZ Rev B (W)

)

Typical Characteristics

FDC608PZ

10

ID = -5.8A VDS = -5V

8

6

4

, GATE-SOURCE VOLTAGE (V)

2

GS

-V

0

0 10203040

Q

, GATE CHARGE (nC)

g

-10V

-15V

2500

2000

C

1500

1000

CAPACITANCE (pF)

500

C

rss

0

0246810

C

oss

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

iss

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

, DRAIN CURRENT (A)

-I

VGS = -4.5V

D

0.1

SINGLE PULSE

R

= 156oC/W

JA

θ

= 25oC

T

0.01

A

0.1 1 10 100

DC

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

1s

10ms

100ms

100µs

1ms

10

8

6

4

2

P(pk), PEAK TRANSIENT POWER (W)

0

0.01 0.1 1 10 100

t

, TIME (sec)

1

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

f = 1 MHz

= 0 V

V

GS

SINGLE PULSE
R

= 156°C/W

JA

θ

T

= 25°C

A

1

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.1

0.01

THERMAL RESISTANCE

0.001

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) * R

JA

θ

R

= 156oC/W

JA

θ

P(pk

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

JA

θ

(t)

JA

θ

/ t

1

2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDC608PZ Rev B (W)

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accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.

Semiconductor reserves the right to make changes at
any time without notice to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I20