Datasheet BGA2031,1 Datasheet (Philips)

DATA SHEET

Preliminary specification 2000 Feb 17

DISCRETE SEMICONDUCTORS

BGA2031/1

MMIC variable gain amplifier

ook, halfpage

MBD128

2000 Feb 17 2

Philips Semiconductors Preliminary specification

MMIC variable gain amplifier BGA2031/1

FEATURES

• High gain

• Excellent adjacent channel power rejection

• Small SMD package

• Low dissipation.

APPLICATIONS

• General purpose variable gain amplifier for low voltage
and medium power

• Driver for power amplifiers in systems that require good
linearity, such as CDMA, both cellular band (850 MHz)
and PCS (1.9 GHz). This is because of the high output
power and good linearity.

DESCRIPTION

Silicon Monolitic Microwave Integrated Circuit (MMIC)
2 stage variable gain amplifier in double polysilicon
technology in a 6-pin SOT363 plastic SMD package for low
voltage medium power applications.

PINNING

PIN DESCRIPTION

1RF in
2CTRL
3V

S1

4VS2+ RF out
5GND
6GND

Fig.1 Simplified outline (SOT363) and symbol.

Marking code: A3−

handbook, halfpage

MAM429

RFin

VS2+RFout

V

S1

CTRL

GND

Top view

BIAS

CIRCUIT

132

45

MSA370

123

654

Top view

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

S1

, V

S2

supply voltages 3 3.3 V

I

S

supply current into pin 3 + pin 4 V

CTRL

=0 0 10 µA

V

CTRL

= 2.7 V; VS=3V 51 63 mA

V

CTRL

= 2.4 V; VS=3V 30 37 mA

P

L

load power at 1 dB gain compression point;

f=1.9GHz

13 − dBm

ACPR adjacent channel power rejection f = 1.9 GHz; P

L

=10dBm 49 − dBc

f = 836 MHz; P

L

=8dBm 48 − dBc

G

p

power gain f = 1.9 GHz; PL=12dBm 23 − dB

f = 836 MHz; P

L

=8dBm 24 − dB

∆G gain control range f = 836 MHz; P

L

=8dBm 62 − dB

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2000 Feb 17 3

Philips Semiconductors Preliminary specification

MMIC variable gain amplifier BGA2031/1

LIMITING VALUES

In accordance with the Absolute Maximum Rating
System (IEC 134)

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

DC supply voltage − 3.3 V

V

CTRL

control voltage − <V

S

V

I

CTRL

control current − 1.2 mA

I

S1

current into pin 3 − 27 mA

I

S2

current into pin 4 − 50 mA

P

D

drive power − tbf dBm

P

tot

total power dissipation Ts≤ 80 °C − 200 mW

T

stg

storage temperature −65 +150 °C

T

j

operating junction temperature − 150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

thermal resistance from junction
to solder point

350 K/W

Fig.2 Power derating.

0

100

200

300

0 50 100 150 200

T

s

(°C)

P

tot

(mW)

2000 Feb 17 4

Philips Semiconductors Preliminary specification

MMIC variable gain amplifier BGA2031/1

CHARACTERISTICS

T

j

=25°C; ZS=ZL=50Ω; VS= 3 V; unless otherwise specified.

Notes

1. G

CS

=(G@V

ctrl

=2.5V− G@V

ctrl

=1.5V)/(V

ctrl

=2.5V− V

ctrl

=1.5V)

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

f frequency range 800 − 2500 MHz
V

S1

, V

S2

supply voltages 2.7 3 3.3 V

I

S

supply current
(in pin3+pin4)

V

CTRL

=0; PD=0mW − 010µA

V

CTRL

=2.7V; VS=3V; PD= 0 mW 37 51 63 mA

V

CTRL

=2.4V; VS=3V; PD= 0 mW 23 30 37 mA

I

CTRL

control current V

CTRL

= 2.7 V 0.7 0.92 1.1 mA

f = 1900 MHz

f frequency range 1850 − 1950 MHz
G

P

power gain V

CTRL

=2.7V; PL=12dBm − 23 − dB

∆G gain control range 0 < V

CTRL

<2.7V − 56 − dB

G

CS

gain control slope note 1 − 21 − dB/V

ACPR adjacent channel power

rejection

±1.23 MHz offset; BW

ACP

=30kHz;

BW

carrier

= 1.23 MHz; PL=10dBm

− 49 − dBc

±1.98 MHz offset; BW

ACP

=30kHz;

BW

carrier

= 1.23 MHz; PL=10dBm

− 74 − dBc

P

L

load power at 1 dB gain compression point − 13 − dBm

P

N

noise power in CDMA receive band

(1895 − 1955 MHz)

− tbf − dBm/Hz

VSWR

IN

input VSWR V

CTRL

=2.7V − 1:3.5 −

VSWR

OUT

output VSWR V

CTRL

=2.7V − 1:1.3 −

f = 836 MHz

f frequency range 824 − 849 MHz
G

P

power gain V

CTRL

=2.7V; PL=8dBm − 24 − dB

∆G gain control range 0 < V

CTRL

<2.7V − 62 − dB

G

CS

gain control slope note 1 − 22 − dB/V

ACPR adjacent channel power

rejection

±885 kHz offset; BW

ACP

=30kHz;

BW

carrier

= 1.23 MHz; PL=8dBm

− 49 − dBc

±1.98 MHz offset; BW

ACP

=30kHz;

BW

carrier

= 1.23 MHz; PL=8dBm

− 74 − dBc

P

L

load power at 1 dB gain compression point − 11 − dBm

P

N

noise power in CDMA receive band

(869 to 894 MHz)

− tbf − dBm/Hz

VSWR

IN

input VSWR V

CTRL

=2.7V − 1:2 −

VSWR

OUT

output VSWR V

CTRL

=2.7V − 1:1.4 −

2000 Feb 17 5

Philips Semiconductors Preliminary specification

MMIC variable gain amplifier BGA2031/1

Fig.2 Total supply current as a function of control

voltage; typical values.

VS=3V.

0

20

40

60

0123

V

CTRL

(V)

I

S

(mA)

Fig.3 Load power as a function of the drive power;

typical values.

VS=3V; V

CTRL

=2.7V.

-8

-4

0

4

8

12

16

-30 -20 -10
P

D

(dBm)

P

L

(dBm)

836MHz

1900MHz

Fig.4 Power gain as a function of control voltage;

typical values.

VS=3V; PD= −14 dBm; f = 1.9 GHz.

-40

-20

0

20

40

0123

V

CTRL

(V)

G

P

(dB)

Fig.5 Power gain as a function of control voltage;

typical values.

VS=3V; PD= −14 dBm; f = 836 MHz.

-60

-40

-20

0

20

40

0123

V

CTRL

(V)

G

P

(dB)

2000 Feb 17 6

Philips Semiconductors Preliminary specification

MMIC variable gain amplifier BGA2031/1

Fig.6 Adjacent channel power rejection as a

function of the load power; typical values.

VS=3V; f=1.9GHz; PD= −12.8 dBm.

-80

-60

-40

-20

0

-16 -12 -8 -4 0 4 8 12
P

L

(dBm)

ACPR

(dBc)

Offset = 1.23MHz

Offset = 1.98MHz

Fig.7 Adjacent channel power rejection as a

function of the load power; typical values.

VS= 3.6 V; f = 836 MHz; PD= −16 dBm.

-80

-60

-40

-20

0

-20-16-12-8-4048
P

L

(dBm)

ACPR

(dBc)

Offset = 0.885MHz

Offset = 1.98MHz

Fig.8 Gain control slope as a function of the

control voltage; typical values.

VS=3V; PD= −14 dBm.

-40

0

40

80

120

160

0123

V

ctrl

(V)

G

CS

(dB/V)

836MHz

1900MHz

2000 Feb 17 7

Philips Semiconductors Preliminary specification

MMIC variable gain amplifier BGA2031/1

ELECTRICAL BLOCK DIAGRAM

List of components (see Fig.3)

Note

1. The striplines are on a gold plated double copper-clad printed-circuit board (ε

r

= 6.15), board thickness = 0.64 mm,

copper thickness = 35 µm, gold thickness = 5 µm.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 multilayer ceramic chip capacitor 10 nF 0603 tbf
C2 multilayer ceramic chip capacitor 22 nF 0603 tbf
C3 multilayer ceramic chip capacitor 1.5 nF 0603 tbf
L1, L2 stripline; note 1 50 Ω tbf
R1 SMD resistor 22 Ω; 0.16 W 0603 tbf
R2 SMD resistor 2.4 Ω; 0.16 W 0603 tbf

handbook, full pagewidth

MGS535

C1

IN

C2 C3

Bias-T

L2L1

R1

R2

DC-block

V

S2

VS2-RFout

V

S1

V

S1

CTRL

V

ctrl

GND

GND

RF outputRF input

BIAS

CIRCUIT

Fig.9 Test diagram.

2000 Feb 17 8

Philips Semiconductors Preliminary specification

MMIC variable gain amplifier BGA2031/1

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

SOT363 SC-88

wBM

b

p

D

e

1

e

pin 1
index

A

A

1

L

p

Q

detail X

H

E

E

v M

A

AB

y

01 2 mm

scale

c

X

132

4

56

Plastic surface mounted package; 6 leads SOT363

UNIT

A

1

max

b

p

cD

E

e

1

H

E

L

p

Qywv

mm

0.1

0.30

0.20

2.2

1.8

0.25

0.10

1.35

1.15

0.65

e

1.3

2.2

2.0

0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

0.25

0.15

A

1.1

0.8

97-02-28

2000 Feb 17 9

Philips Semiconductors Preliminary specification

MMIC variable gain amplifier BGA2031/1

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000

69

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Printed in The Netherlands 125006/03/pp10 Date of release: 2000 Feb 17 Document order number: 9397 750 06892