Datasheet B3540K4, B3520K4 Datasheet (BAYLI)

Bay Linear, Inc

2418 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

N-CHANNEL DMOS FET SWITCH

B3520/B3540

High Gain Level Shifter

Series

Pin Connection

Ordering Information

Package Part No.

SOT-143 B3520K4 -X.X

SOT-143 B3540K4-XX

Description

The B3520 series consists of enhancement-mode
MOSFETs designed for high speed low-glitch switching
in audio, video, and high-frequency wireless
applications. The CT3520 is optimized as a high speed
driver. With a source feedback resistor it can be uses as
a high speed LED Driver.

The B3520 series uses Bay Linear ULTRA REL DMOS
Process for reliability and robust performance.

These MOSFETs utilize lateral construction to achieve
low capacitance and ultra-fast switching speeds. An
integrated Zener diode provides ESD protection.

Features

• Low capacitance – 0.3pF typical

• Low threshold – <1.5V max

• Fast switching – ton<1ns

• CMOS and TTL Compatible Input

Application

• LED Drivers

• Level Shifting

• Switch Drivers

• VHF/UHF Amplifiers

Bay Linear

Inspire the Linear Power

2

14

3

2

14

32

14

3

SOT-143 Package
Lead Code Identification
(top view)

Body

Substrate

Source

Gate

Drain

Bay Linear, Inc

2418 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

B3520/B3540

Electrical Specifications (TC = +25°C unless otherwise noted)

B3520 B3540

Parameter Symbol Test Conditions

Min Typ Max Min Typ Max

Units

Drain-Source

Breakdown

Voltage

BVDS

ID=1 µA

VGS=VBS=0

15 25 15 25 V

Source-Drain

Breakdown

Voltage

BVSD

IS=50 nA

VGD=VBD=-5

10 15 V

Drain-

Substrate

Breakdown

Voltage

BVDB

ID=50 nA, VGB=0

Source Open

10 15 V

Source-

Substrate

Breakdown

Voltage

B

VSB

I

D

=10 µA, VGB=0

Drain Open

10 15 V

VDS=10V 1 50 nA

Drain-Source

Leakage

I

D (OFF

)

V

GS/BS

=-5

V

GS/BS

=0

V

DS

=15V 0.1 1 µA

VDS=10V 1 50 nA

Source -

Drain

Leakage

IS

(OFF

)

V

GD/BS

=-5

V

GS/BS

=0

V

DS

=15V 0.1 1 µA

Gate Leakage I

GBS

V

DB/SB

= 0 VGS=20V 1 10 1 10 µA

Gate

Threshold

Voltage

V

GS

(th)

V

DS=VGS

ID=1 µA

V

SB

=0

0.3 0.7 1.5 0.3 0.7 1.5 V

VGS=2.4V 140 175 140 175 Ohm

STATIC

Drain-Source

ON

Resistance

r

DS (ON)

ID=1 mA

V

SB

= 0V

V

GS

=4.5V 40 60 40 60 Ohm

B3520 B3540

Parameter Symbol Test Conditions

Min Typ Max Min Typ Max

Units

Common-Source

Forward

Transconductance

gfS

V

DS

= 10V

I

D

= 20mA

f = 1MHz, VSB=0

Pulsed

14 18 14 18 V

Gate Node

Capacitance

C(gs+gd+gb) 4.5 6.0 4.5 6.0 pF

Drain Node
Capacitance

C(gd+db) 2.0 3.0 2.0 3.0 pF

Source Node

Capacitance

C(gs+sb) 5.5 7.0 5.5 7.0 pF

Reverse Transfer

Capacitance

C(dg)

V

DS

= 10V

V

GS=VBS

= -15V

f = 1MHz

0.3 0.5 0.3 0.5 pF

Turn On Delay

Time

td(on) 0.7 1.0 0.7 1.0 ns

Rise Time tr 0.8 1.0 0.8 1.0 ns

DYNAMIC

Turn Off Delay

Time

Td(off)

V∞= 10V

VG(on)= 10V

R

L

= 680 Ω

R

G

= 51Ω

C

L

= 1.5pF

1.5 1.5 ns

Bay Linear, Inc

2418 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

B3520

510 Ω

V

IN

R

L

51 Ω

V

OUT

+V

DD

To
Scope

To

Scope

510 Ω

V

IN

R

L

51 Ω

V

OUT

+V

DD

To
Scope

To

Scope

Input Pulse: t

d

, tr< 1ns

Pulse width: 100 ns

Rep rate: 1 MHz

Sampling Scope

T

r

< 360 ps

R

IN

= 1 MΩ

C

IN

= 2 pF

BW = 500 MHz

Switching Time Test Circuit

+5 V

V

IN

0 V

0 V

V

OUT

V

DD

50%

50%

10%

90%

t

d(on)

t

d(off)

t

f

t

f

Bay Linear, Inc

2418 Armstrong Street, Livermore, CA 94550 Tel: [phone], Fax: [phone] www.baylinear.com

B3520

Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.

Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.

The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.

LIFE SUPPORT AND NUCLEAR POLICY

Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.

Absolute Maximum Ratings, Tc= +25°C

Notes:

1. Operation in excess of any one of these conditions may result in
permanent damage to the device

2. T

C

= +25°C, where TCis defined to be the temperature at the

package pins where contact is made to the circuit board.

ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.

300mWPower dissipation Tc=25

3mW/CLinear Derating Factor

-0.3 / +20VGate-Drain Voltage

50mAContinuous Drain Current

+15VDrain-Source Voltage

-0.3 / +20VGate-Source Voltage

-55 to +125°CStorage Temperature

-55 to +125°CJunction Temperature

SOT-143

Absolute Maximum

[1]

UnitParameter

300mWPower dissipation Tc=25

3mW/CLinear Derating Factor

-0.3 / +20VGate-Drain Voltage

50mAContinuous Drain Current

+15VDrain-Source Voltage

-0.3 / +20VGate-Source Voltage

-55 to +125°CStorage Temperature

-55 to +125°CJunction Temperature

SOT-143

Absolute Maximum

[1]

UnitParameter