Datasheet APT8028JVR Datasheet (Advanced Power Technology APT)

APT8028JVR

800V 28A 0.280Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular SOT-227 Package

Symbol

V

DSS

I

DM

V

GSM

P

TJ,T

T

I

AR

E E

Parameter

Drain-Source Voltage Continuous Drain Current @ T

D

Pulsed Drain Current Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

D

®

S

SOT-227

"UL Recognized"

S

G

®

ISOTOP

D

G

S

APT8028JVR

800

UNIT

Volts

28

112

Amps

±30 ±40

Volts

500

4

-55 to 150

Watts

W/°C

°C

300

16

Amps

30

1300

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 9215 15 FAX: (33) 5 56 47 97 61

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current Drain-Source On-State Resistance Zero Gate Voltage Drain Current (VDS = V Zero Gate Voltage Drain Current (V Gate-Source Leakage Current (VGS = ±30V, V Gate Threshold Voltage (VDS = VGS, ID = 1mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

800

28

24

0.280 50

500

±100

UNIT

Volts

Amps Ohms

µA

nA

Volts

050-5607 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT8028JVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge

3

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

)

= 0V

GS

= 10V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

7700 9240

730 1020 350 425 380 570

38 55

165 245

13 26 10 20 51 75

816

MIN TYP MAX

28

112

1.3

950

21

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5607 Rev B

THERMAL/PACKAGE CHARACTERISTICS

Symbol

R

V

Isolation

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

RMS Voltage

(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

3

See MIL-STD-750 Method 3471

4

Starting T

0.3

D=0.5

0.1

0.2

0.1

0.05

0.02

0.01

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

, THERMAL IMPEDANCE (°C/W) Z

JC

θ

0.05

0.01

0.005

0.001

-5

10

+25°C, L = 10.16mH, R

j

=

-1

10

MIN TYP MAX

0.25 40

2500

13

25Ω, Peak IL = 16A

G

=

1.0 10

UNIT

°C/W

Volts

lb•in

APT8028JVR

50

VGS=5.5V, 6V, 7V, 10V & 15V

40

5V

50

40

VGS=5.5V, 6V & 7V

VGS=15V

VGS=10V

5V

30

20

10

, DRAIN CURRENT (AMPERES)

D

0

0 80 160 240 320 400 0 3 6 9 12 15 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4.5V

4V

30

20

10

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

50

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE

40

30

1.20

1.15

1.10

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

VGS=10V

20

TJ = +125°C

10

, DRAIN CURRENT (AMPERES) I

D

0

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TJ = +25°C

02468 01020304050

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

30

1.05 VGS=20V

1.00

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.95

DS

1.15

4.5V

4V

25

1.10

20

1.05

15

1.00

10

, DRAIN CURRENT (AMPERES) I

5

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5607 Rev B

200 100

OPERATION HERE

50

LIMITED BY RDS (ON)

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C SINGLE PULSE

10µS 100µS

1mS

10mS

100mS DC

30,000

10,000

5,000

1,000

500

APT8028JVR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 800 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 150 300 450 600 750 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=100V

VDS=250V

VDS=400V

100

50

T

=+150°C T

J

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

=+25°C

J

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

W=4.1 (.161) W=4.3 (.169)

H=4.8 (.187) H=4.9 (.193)

(4 places)

12.2 (.480)

8.9 (.350)

9.6 (.378) Hex Nut M4

(4 places)

r = 4.0 (.157) (2 places)

14.9 (.587)

15.1 (.594)

4.0 (.157)

4.2 (.165) (2 places)

3.3 (.129)

3.6 (.143)

* Source Drain

0.75 (.030)

0.85 (.033)

1.95 (.077)

2.14 (.084)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

* Source

Gate

Dimensions in Millimeters and (Inches)

®

ISOTOP

is a Registered Trademark of SGS Thomson.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5607 Rev B

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

25.2 (0.992)

12.6 (.496)

25.4 (1.000)

12.8 (.504)

*

Source terminals are shorted internally. Current handling capability is equal for either Source terminal.

"UL Recognized" File No. E145592

Datasheet APT8028JVR Datasheet (Advanced Power Technology APT)

Specifications and Main Features

Frequently Asked Questions

User Manual