Datasheet APT60GT60JRD Datasheet (Advanced Power Technology APT)

APT60GT60JRD

SOT-227

G

E

E

C

ISOTOP

®

"UL Recognized"

Thunderbolt IGBT™ & FRED

The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ combined
with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers
superior ruggedness and ultrafast switching speed.

600V 90A

• Low Forward Voltage Drop • High Freq. Switching to 150KHz

C

• Low Tail Current • Ultra Low Leakage Current

• Ultrafast Soft Recovery • RBSOA and SCSOA Rated

G

Antiparallel Diode

E

MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

CES

V

CGR

V

GE

I

C1

I

C2

I

CM1

I

CM2

P

D

TJ,T

STG

T

L

Parameter

Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

= 20KΩ)

GE

= 25°C

C

= 110°C

C

1

@ TC = 25°C

1

@ TC = 110°C

APT60GF60JRD

600
600
±20

90

60
180
120
375

-55 to 150
300

UNIT

Volts

Amps

Watts

°C

STATIC ELECTRICAL CHARACTERISTICS (IGBT)

Symbol

BV

VGE(TH)

V

CE

I

CES

I

GES

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

CES

Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)

(ON)

Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 150°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (V

PRELIMINARY

= VGE, IC = 700µA, Tj = 25°C)

CE

= V

CE

CES

CES

GE

= 0V, IC = 0.5mA)

GE

, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)

= ±20V, V

CE

= 0V)

MIN TYP MAX

600

345

1.6 2.0 2.5

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

2.8

0.3

3.0

±100

UNIT

Volts

mA

nA

052-6260 Rev B

DYNAMIC CHARACTERISTICS (IGBT) APT60GT60JRD

Symbol

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

td(on)

t

r

td(off)

t

f

td(on)

t

r

td(off)

t

f

E

on

E

off

E

ts

td(on)

t

r

td(off)

t

f

E

ts

gfe

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

2

Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy

3

3

Total Switching Losses
Turn-on Delay Time
Rise Time

PRELIMINARY

Turn-off Delay Time
Fall Time
Total Switching Losses

3

Forward Transconductance

Test Conditions

Capacitance

= 0V

V

GE

V

= 25V

CE

f = 1 MHz

Gate Charge

V

= 15V

GE

V

= 0.8V

CC

CES

I

= I

C

C2

Resistive Switching (25°C)

= 15V

V

GE

V

= 0.8V

CC

CES

I

= I

C

C2

RG = 5Ω

Inductive Switching (150°C)

V

(Peak) = 0.66V

CLAMP

V

T

J

= 15V

GE

I

= I

C

C2

R

= 5Ω

G

= +150°C

CES

Inductive Switching (25°C)

V

(Peak) = 0.66V

CLAMP

V

T

= 20V, I

V

CE

= 15V

GE

I

= I

C

R

= 5Ω

G

= +25°C

J

C2

CES

= I

C

C2

MIN TYP MAX

3200

400
180
280
120

20
14

55
200
140

25

75
300

95

1.9

2.4

4.3
25
75

260

90

3.8

6

UNIT

pF

nC

ns

ns

mJ

ns

mJ

S

THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)

Symbol

R

ΘJC

R

ΘJA

W

Torque

1

Repetitive Rating: Pulse width limited by maximum junction temperature.

2

See MIL-STD-750 Method 3471

3

These switching losses are a combination of both the FRED and the IGBT.

APT Reserves the right to change, without notice, the specifications and information contained herein.

052-6260 Rev B

Characteristic

Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient

Package Weight

T

Mounting Torque (

Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)

MIN TYP MAX

0.33

0.66
20

1.03

29.2

13.6

1.5

UNIT

°C/W

oz

gm
lb•in
N•m

APT60GT60JRD

ULTRAFAST SOFT RECOVERY PARALLEL DIODE

MAXIMUM RATINGS (FRED) All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

V

RRM

V

RWM

IF(AV)

I

(RMS)

F

I

FSM

Characteristic / Test Conditions

Maximum D.C. Reverse Voltage

R

Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
RMS Forward Current
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)

= 85°C, Duty Cycle = 0.5)

C

STATIC ELECTRICAL CHARACTERISTICS (FRED)

Symbol

V

Characteristic / Test Conditions

Maximum Forward Voltage I

F

I

F

F

IF = 60A, TJ = 150°C

= 60A
= 120A

APT60GT60JRD

600

60
100
600

MIN TYP MAX

1.8

1.75

1.5

UNIT

Volts

Amps

UNIT

Volts

DYNAMIC CHARACTERISTICS (FRED)

Symbol

t

rr1

t

rr2

t

rr3

t

fr1

t

fr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

V

fr1

V

fr2

diM/dt

Characteristic

Reverse Recovery Time, I
Reverse Recovery Time TJ = 25°C

= 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C

I

F

Forward Recovery Time TJ = 25°C

= 60A, diF/dt = 480A/µs, VR = 350V TJ = 100°C

I

F

Reverse Recovery Current TJ = 25°C

= 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C

I

F

Recovery Charge T
IF = 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C
Forward Recovery Voltage T

= 60A, diF/dt = 480A/µs, VR = 350V TJ = 100°C

I

F

Rate of Fall of Recovery Current TJ = 25°C

= 60A, diF/dt = -480A/µs, VR = 350V TJ = 100°C

I

F

PRELIMINARY

= 1.0A, diF/dt = -15A/µs, VR = 30V, TJ = 25°C

F

= 25°C

J

= 25°C

J

MIN TYP MAX

55 70

70

90
160
160

10 17

20 30
350
900

6

6
800
500

UNIT

ns

Amps

nC

Volts

A/µs

052-6260 Rev B

200

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

160

2500

2000

TJ=100°C

VR=350V

APT60GT60JRD

120

80

, FORWARD CURRENT

F

40

0

0 0.5 1.0 1.5 2.0 2.5 10 50 100 500 1000

VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

TJ = 150°C

TJ = 100°C

TJ = 25°C

= -55°C

T

J

1500

1000

500

, REVERSE RECOVERY CHARGE

rr

0

120A

60A

30A

Figure 1, Forward Voltage Drop vs Forward Current Figure 2, Reverse Recovery Charge vs Current Slew Rate

50

TJ=100°C
VR=350V

40

120A

60A

30

2.0

1.6

1.2

Q

rr

t

rr

30A

t

RRM

rr

Q

rr

, REVERSE RECOVERY CURRENT I

RRM

20

10

0

0 200 400 600 800 1000 -50 -25 0 25 50 75 100 125 150

diF/dt, CURRENT SLEW RATE (AMPERES/µSEC) TJ, JUNCTION TEMPERATURE (°C)

0.8

, DYNAMIC PARAMETERS Q

f

0.4

0.0

I

Figure 3, Reverse Recovery Current vs Current Slew Rate Figure 4, Dynamic Parameters vs Junction Temperature

200

160

120

TJ=100°C
VR=350V

120A

60A

30A

1200

1000

800

600

TJ=100°C
VR=350V

IF=60A

V

fr

15.0

12.5

10.0

7.5

80

PRELIMINARY

40

, REVERSE RECOVERY TIME I

rr

0

0 200 400 600 800 1000 0 200 400 600 800 1000

/dt, CURRENT SLEW RATE (AMPERES/µSEC) diF/dt, CURRENT SLEW RATE (AMPERES/µSEC)

di

Figure 5, Reverse Recovery Time vs Current Slew Rate Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate

F

400

(nano-SECONDS) (NORMALIZED) (nano-COULOMBS)

, FORWARD RECOVERY TIME K

200

fr

t

0

T

fr

5.0

2.5

0

0.7

0.5

D=0.5

(VOLTS)

, FORWARD RECOVERY VOLTAGE

fr

V

052-6260 Rev B

0.2

0.1

0.05

(°C/W) (nano-SECONDS) (AMPERES) (AMPERES)

0.01

, THERMAL IMPEDANCE t

0.005

ΘJC

Z

0.001

-5

10

Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.1

0.05

0.02

0.01

SINGLE PULSE

-4

10

-3

10

V

RECTANGULAR PULSE DURATION (SECONDS)

, REVERSE VOLTAGE (VOLTS)

R

-2

10

-1

10

1.0 10

30µH

APT60GT60JRD

V

r

D.U.T.

t

Q

/

rr

rr

Waveform

+15v

diF/dt Adjust

0v

-15v

Figure 25, Diode Reverse Recovery Test Circuit and Waveforms

1

- Forward Conduction Current

I

F

di

2

/dt - Current Slew Rate, Rate of Forward

F

Current Change Through Zero Crossing.

1

Zero

3

4

5
6

- Peak Reverse Recovery Current.

I

RRM

trr - Reverse Recovery Time Measured from Point of I

Current Falling Through Zero to a Tangent Line
Extrapolated Through Zero Defined by 0.75 and 0.50 I

Qrr - Area Under the Curve Defined by I

PRELIMINARY

diM/dt - Maximum Rate of Current Change During the Trailing Portion of t

PRELIMINARY

Figure 8, Diode Reverse Recovery Waveform and Definitions

RRM

and trr.

F

6

{ diM/dt}

.

RRM

PEARSON 411

CURRENT

TRANSFORMER

3

2

rr.

4

6

5

0.5 I

RRM

0.75 I

RRM

Q

rr

= 1/

t

I

(

rr

2

)

RRM

.

(2 places)

052-6260 Rev B

r = 4.0 (.157)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

12.2 (.480)

8.9 (.350)

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

* Emitter Collector

* Emitter

Dimensions in Millimeters and (Inches)

9.6 (.378)

0.75 (.030)

0.85 (.033)

1.95 (.077)

2.14 (.084)

Hex Nut M4
(4 places)

*

Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

Gate

12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)