Datasheet APT6015LVFR Datasheet (Advanced Power Technology APT)

APT6015LVFR

600V 38A 0.150W

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement

FREDFET

TO-264

mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode • 100% Avalanche Tested

D

• Lower Leakage • Popular TO-264 Package

• Faster Switching

G

S

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

APT6015LVFR

600

38
152
±30
±40
520

4.16

-55 to 150
300

38
50

2500

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

R

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

PRELIMINARY

Characteristic / Test Conditions

BV

I

D(on)
DS(on)

I

DSS

I

GSS

V

GS(th)

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

600

38

0.150

24

250

1000
±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5945 Rev- 1-2000

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

V

= 0.5 V

DD

ID = I

[Cont.] @ 25°C

D

V

GS

V

= 0.5 V

DD

ID = I

[Cont.] @ 25°C

D

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

= 0V

GS

= 10V

= 15V

= 0.6W

DSS

DSS

APT6015LVFR

MIN TYP MAX

7500 9000

900 1260
320 480
315 475

45 70

125 190

15 30
13 26
45 70

510

UNIT

pF

nC

ns

Symbol

I

I

SM

V

dv

t

Q

I

RRM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Peak Diode Recovery dv/

/

dt

1

(Body Diode)

2

dt

Reverse Recovery Time

rr

= -ID [Cont.], di/dt = 100A/µs)

(I

S

Reverse Recovery Charge

rr

(IS = -ID [Cont.], di/dt = 100A/µs)
Peak Recovery Current

(IS = -ID [Cont.], di/dt = 100A/µs)

(VGS = 0V, IS = -ID [Cont.])

5

T

= 25°C 250

j

T

= 125°C 500

j

T

= 25°C 1.6

j

T

= 125°C 5.5

j

T

= 25°C 15

j

T

= 125°C 27

j

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case

qJC

Junction to Ambient

PRELIMINARY

qJA

3

See MIL-STD-750 Method 3471

4

Starting T

5

IS £ ID [Cont.],

+25°C, L = 3.46mH, R

j

=

di

/

= 100A/µs, T

dt

MIN TYP MAX

38

152

1.3
5

MIN TYP MAX

0.24
40

25W, Peak IL = 38A

G

=

150°C, R

j

£

= 2.0W, VR = 200V.

G

UNIT

Amps

Volts

V/ns

ns

µC

Amps

UNIT

°C/W

050-5945 Rev- 1-2000

0.3

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

D=0.5

0.2

0.1

0.05

0.02

0.01

-4

10

SINGLE PULSE

10

RECTANGULAR PULSE DURATION (SECONDS)

-3

-2

10

-1

10

1.0 10

APT6015LVFR

100

80

VGS=6V, 7V, 10V & 15V

5.5V

100

80

VGS=6V, 7V, 10V & 15V

5.5V

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

0 50 100 150 200 250 300 0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

80

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

60

@ <0.5 % DUTY CYCLE

40

20

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

40

TJ = +125°C

0

02468 020406080100

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

TJ = -55°C

TJ = +25°C

TJ = +125°C

TJ = +25°C

5V

4.5V

4V

TJ = -55°C

60

40

20

, DRAIN CURRENT (AMPERES)

D

0

1.6

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.4

VGS=10V

1.2

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.8

DS

1.15

VGS=20V

5V

4.5V

4V

30

20

PRELIMINARY

10

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

2.0

1.5

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

T

C

ID = 0.5 ID [Cont.]

VGS = 10V

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

1.10

1.05

1.00

0.95

, DRAIN-TO-SOURCE BREAKDOWN R

DSS

0.90

1.2

1.1

1.0

0.9

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5945 Rev- 1-2000

200

OPERATION HERE

100

LIMITED BY R

50

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

(ON)

DS

10µS
100µS

1mS

10mS

100mS
DC

30,000

10,000

5,000

1,000

500

APT6015LFVR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 600 .01 .1 1 10 50

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=120V

VDS=300V

VDS=480V

100

200

100

50

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

T

J

=+150°C T

J

=+25°C

TO-264 Package Outline

4.60 (.181)

5.21 (.205)

PRELIMINARY

1.80 (.071)

2.01 (.079)

19.51 (.768)

20.50 (.807)

3.10 (.122)

3.48 (.137)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

Drain

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.76 (.030)

1.30 (.051)

5.45 (.215) BSC

2.79 (.110)

3.18 (.125)

2-Plcs.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5945 Rev- 1-2000

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

2.29 (.090)

2.69 (.106)

Gate
Drain
Source