Datasheet APT6015B2VR Datasheet (Advanced Power Technology APT)

APT6015B2VR

600V 38A 0.150Ω

POWER MOS V

®

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • New T-MAX™ Package

(Clip-mounted TO-247 Package)

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage Continuous
Gate-Source Voltage Transient

Total Power Dissipation @ T

= 25°C

C

Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy

1

(Repetitive and Non-Repetitive)

1

4

APT6015B2VR

T-MAX™

G

600

38

152

±30
±40

520

4.16

-55 to 150
300

38
50

2500

D

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

= VGS, ID = 2.5mA)

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= V

DS

= 0.8 V

DS

= ±30V, V

GS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

MIN TYP MAX

600

38

0.150
25

UNIT

Volts

Amps
Ohms

µA

250

±100

24

nA

Volts

050-5612 Rev B

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT6015B2VR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

V

DS

f = 1 MHz

VGS = 10V

V

= 0.5 V

DD

ID = I

D[Cont.]

V

GS

V

= 0.5 V

DD

ID = I

D[Cont.]

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

S

SD

Characteristic / Test Conditions

Continuous Source Current (Body Diode)
Pulsed Source Current

Diode Forward Voltage
Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1

(Body Diode)

2

(VGS = 0V, IS = -I

S

= -I

S

D[Cont.]

= -I

D[Cont.]

, dlS/dt = 100A/µs)

, dlS/dt = 100A/µs)

D[Cont.]

)

= 0V

GS

= 25V

= 15V

= 0.6Ω

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

7500 9000

900 1260
320 480

315 475

45 70

125 190

15 30
13 26
45 70

510

MIN TYP MAX

38

152

1.3

690

15.9

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5612 Rev B

THERMAL CHARACTERISTICS

Symbol

R
R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

θJC
θJA

, THERMAL IMPEDANCE (°C/W)
Z

Characteristic

Junction to Case
Junction to Ambient

0.3

0.1

0.05

0.01

0.005

JC

θ

0.001

-5

10

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

D=0.5

0.2

0.1

0.05

0.02

0.01

-4

10

SINGLE PULSE

10

RECTANGULAR PULSE DURATION (SECONDS)

3

See MIL-STD-750 Method 3471

4

Starting Tj = +25°C, L = 3.46mH, RG = 25Ω, Peak IL = 38A

-3

-2

10

-1

10

MIN TYP MAX

0.24
40

1.0 10

UNIT

°C/W

APT6015B2VR

100

80

VGS=6V, 7V, 10V & 15V

5.5V

100

80

VGS=6V, 7V, 10V & 15V

5.5V

60

5V

40

60

40

4.5V

20

, DRAIN CURRENT (AMPERES)

D

0

0 50 100 150 200 250 300 0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

4V

20

, DRAIN CURRENT (AMPERES)

D

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

100

80

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

60

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = +25°C

TJ = +125°C

40

20

, DRAIN CURRENT (AMPERES) I

D

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, R

TJ = +125°C

TJ = +25°C

0

02468 020406080100

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

V

GS

TJ = -55°C

40

1.6

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.4

VGS=10V

1.2
VGS=20V

1.0

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.8

DS

(ON) vs DRAIN CURRENT

DS

1.15

5V

4.5V

4V

30

1.10

1.05

20

1.00

10

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

, DRAIN-TO-SOURCE BREAKDOWN R

0.95

DSS

0.90

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

2.0

ID = 0.5 ID [Cont.]

VGS = 10V

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

T

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5612 Rev B

200

OPERATION HERE

100

LIMITED BY RDS (ON)

50

10

5

1

TC =+25°C

.5

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

10µS
100µS

1mS

10mS

100mS
DC

30,000

10,000

5,000

1,000

500

APT6015B2VR

C

iss

C

oss

C

rss

.1

1 5 10 50 100 600 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2.0

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=120V

VDS=300V

VDS=480V

T-MAX™ Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

100

200

100

50

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

T

J

5

15.49 (.610)

16.26 (.640)

=+150°C T

J

5.38 (.212)

6.20 (.244)

=+25°C

20.80 (.819)

21.46 (.845)

Drain

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC
2-Plcs.

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5612 Rev B

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Gate
Drain
Source