Datasheet APT20M42HVR Datasheet (Advanced Power Technology APT)

APT20M42HVR

200V 50A 0.042W

POWER MOS V

®

TO-258

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Hermetic TO-258 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

1

= 25°C

C

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

1

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

(Repetitive and Non-Repetitive)

1

4

®

D

G

S

APT20M42HVR

200

UNIT

Volts

50

200

Amps

±30
±40

Volts

250

2.0

-55 to 150

Watts

W/°C

°C

300

45

Amps

30

1300

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

2

(V

DS

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V

Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]

MIN TYP MAX

200

50

24

0.042
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5807 Rev C 10-2000

DYNAMIC CHARACTERISTICS

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

APT20M42HVR

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

V

GS

V

= 0.5 V

DD

ID = I

D[Cont.]

R

G

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

(Body Diode)

S

= -I

, dlS/dt = 100A/µs)

D[Cont.]

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

@ 25°C

= 15V

@ 25°C

= 1.6W

DSS

DSS

MIN TYP MAX

5100 6120
1145 1600

390 585
148 225

47 75
75 110
14 28
21 42
48 75
10 20

MIN TYP MAX

50

200

1.5

160

1.3

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

050-5807 Rev C 10-2000

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

qJA

0.5

D=0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

-5

10

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

3

See MIL-STD-750 Method 3471

4

Starting T

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

+25°C, L = 1.04mH, R

j

=

10

MIN TYP MAX

0.50

UNIT

°C/W

40

25W, Peak IL = 50A

G

=

-1

1.0 10

APT20M42HVR

150

VGS=10V & 15V

150

VGS=15V

10V

120

7V

90

6.5V

120

90

6V

60

60

5.5V

30

, DRAIN CURRENT (AMPERES)

D

5V

30

, DRAIN CURRENT (AMPERES)

D

4.5V

0

0 204060 80100 0123456
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

0

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

150

TJ = -55°C

TJ = +25°C

120

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

90

@ <0.5 % DUTY CYCLE

TJ = +125°C

60

30

, DRAIN CURRENT (AMPERES) I

D

TJ = +125°C

TJ = +25°C

TJ = -55°C

0

0 2 4 6 8 10 0 40 80 120 160 200

V

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

GS

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

50

1.3

NORMALIZED TO

V

= 10V @ 0.5 ID [Cont.]

GS

1.2

1.1
VGS=10V

1.0

VGS=20V

0.9

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.8

DS

1.15

7V

6.5V

6V

5.5V

5V

4.5V

40

30

20

10

, DRAIN CURRENT (AMPERES) I

D

0

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

2.5

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

T

C

ID = 0.5 ID [Cont.]

VGS = 10V

2.0

, DRAIN-TO-SOURCE BREAKDOWN R

1.10

1.05

1.00

0.95

DSS

0.90

1.2

1.1

1.0

1.5

0.9

1.0

(NORMALIZED)

0.5

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

0.0

DS

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

R

T

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

J

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

0.8

(NORMALIZED) VOLTAGE (NORMALIZED)

(TH), THRESHOLD VOLTAGE BV

0.7

GS

V

0.6

050-5807 Rev C 10-2000

200

OPERATION HERE

LIMITED BY RDS (ON)

100

50

10

5

TC =+25°C

, DRAIN CURRENT (AMPERES)

D

TJ =+150°C
SINGLE PULSE

100µS

1mS

10mS

15,000
10,000

5,000

1,000

500

APT20M42HVR

C

iss

C

oss

C

rss

1

1 5 10 50 100 200 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

20

ID = ID [Cont.]

16

12

8

4

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

GS

V

0

0 50 100 150 200 250 300 0.2 0.6 1.0 1.4 1.8 2.2

Q

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

g

VDS=40V

VDS=100V

VDS=160V

100

300

100

50

10

5

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

DR

1

I

T

=+150°C T

J

=+25°C

J

TO-258 Package Outline

17.65 (.695)

1.14 (.045)

0.88 (.035)

17.39 (.685)

8.89 (.350)

8.63 (.340)

21.21 (.835)

20.70 (.815)

13.84 (.545)

13.58 (.535)

17.96 (.707)

17.70 (.697)

19.05 (0.750)

12.70 (0.500)

3.56 (.140) BSC

6.86 (.270)

6.09 (.240)

1.65 (.065)

1.39 (.055)

Dia. Typ.

3 Leads

5.08 (.200) BSC

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5807 Rev C 10-2000

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

4.19 (.165)

3.94 (.155)

Drain

Source

Gate