Datasheet APT20M40BVR Datasheet (Advanced Power Technology APT)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, ID = 250µA)

On State Drain Current

2

(V

DS

> I

D(on)

x R

DS(on)

Max, VGS = 10V)

Drain-Source On-State Resistance

2

(VGS = 10V, 0.5 I

D[Cont.]

)

Zero Gate Voltage Drain Current (VDS = V

DSS

, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (VGS = ±30V, V

DS

= 0V)

Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)

050-5620 Rev A

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

C

= 25°C

Pulsed Drain Current

1

Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps
Ohms

µA

nA

Volts

MIN TYP MAX

200

59

0.040
25

250

±100

24

APT20M40BVR

200

59

236

±30
±40

300

2.4

-55 to 150
300

56
30

1300

APT20M40BVR

200V 59A 0.040Ω

G

D

S

TO-247

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• Faster Switching • 100% Avalanche Tested

• Lower Leakage • Popular TO-247 Package

POWER MOS V

®

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

APT Website - http://www.advancedpower.com

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr

DYNAMIC CHARACTERISTICS

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

VDS = 25V

f = 1 MHz

V

GS

= 10V

VDD = 0.5 V

DSS

ID = I

D[Cont.]

@ 25°C

VGS = 15V

VDD = 0.5 V

DSS

ID = I

D[Cont.]

@ 25°C

RG = 1.6Ω

MIN TYP MAX

4050 4860

980 1375
300 450
130 195

30 45
55 80
12 24
14 28
43 70

714

UNIT

pF

nC

ns

APT20M40BVR

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

050-5620 Rev A

Characteristic / Test Conditions

Continuous Source Current (Body Diode)
Pulsed Source Current

1

(Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -I

D[Cont.]

)

Reverse Recovery Time (IS = -I

D[Cont.]

, dlS/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -I

D[Cont.]

, dlS/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN TYP MAX

59

236

1.3

280

3.5

1

Repetitive Rating: Pulse width limited by maximum junction

3

See MIL-STD-750 Method 3471

temperature.

4

Starting T

j

=

+25°C, L = 0.75mH, R

G

=

25Ω, Peak IL = 59A

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θJA

MIN TYP MAX

0.42
40

UNIT

°C/W

Characteristic

Junction to Case
Junction to Ambient

Z

θ

JC

, THERMAL IMPEDANCE (°C/W)

10

-5

10

-4

10

-3

10

-2

10

-1

1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.5

0.1

0.05

0.01

0.005

0.001

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

0.1

SINGLE PULSE

0.02

0.05

0.2

D=0.5

0.01

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

T

C

, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

T

J

, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES) I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED)

V

GS

(TH), THRESHOLD VOLTAGE BV

DSS

, DRAIN-TO-SOURCE BREAKDOWN R

DS

(ON), DRAIN-TO-SOURCE ON RESISTANCE I

D

, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

020406080100 0 2 4 6 8 10

02468 04080120160200

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

APT20M40BVR

ID = 0.5 ID [Cont.]

VGS = 10V

100

80

60

40

20

0

1.6

1.4

1.2

1.0

0.8

1.15

1.10

1.05

1.00

0.95

0.90

1.2

1.1

1.0

0.9

0.8

0.7

0.6

100

80

60

40

20

0

100

80

60

40

20

0

60

50

40

30

20

10

0

2.5

2.0

1.5

1.0

0.5

0.0

050-5620 Rev A

VDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

4.5V
4V

VGS=10V

VGS=20V

TJ = +25°C

TJ = -55°C

TJ = +25°C

TJ = -55°C

5.5V

5V

6V

7V

VGS=15V

VGS=8V, 9V & 10V

6.5V

4.5V
4V

5.5V

5V

6V

6.5V

VGS=8V, 9V, 10V & 15V

TJ = +125°C

TJ = +125°C

NORMALIZED TO

V

GS

= 10V @ 0.5 ID [Cont.]

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

Q

g

, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS) I

D

, DRAIN CURRENT (AMPERES)

I

DR

, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

1 5 10 50 100 200 .01 .1 1 10 50

0 50 100 150 200 250 0 0.4 0.8 1.2 1.6 2.0

APT20M40BVR

TC =+25°C
TJ =+150°C
SINGLE PULSE

300

100

50

10

5

1

20

16

12

8

4

0

ID = ID [Cont.]

10,000

5,000

1,000

500

100

300

100

50

10

5

1

050-5620 Rev A

OPERATION HERE

LIMITED BY RDS (ON)

T

J

=+150°C T

J

=+25°C

C

rss

C

oss

C

iss

VDS=160V

VDS=40V

10µS
100µS

1mS

10mS

100mS
DC

VDS=100V

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Drain

Drain
Source

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

TO-247 Package Outline