Page 1
Transistors
2SB1321A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1992A
■ Features
• Large collector power dissipation PC (600 mW)
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
C
j
stg
−60 V
−50 V
−7V
−1A
−500 mA
600 mW
150 °C
−55 to +150 °C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
1
Forward current transfer ratio
*
Collector to emitter saturation voltage V
CBO
I
CEO
CBO
CEO
EBO
h
FE1
h
FE2
CE(sat)IC
Transition frequency f
Collector output capacitance C
Note)*1: Pulse measurement
2: Rank classification
*
Rank Q R S No-rank
h
FE1
85 to 170 120 to 240 170 to 340 85 to 340
Product of no-rank is not classified and have no indication for rank.
VCB = −20 V, IE = 0 − 0.1 µA
VCE = −20 V, IB = 0 −1 µA
IC = −10 µA, IE = 0 −60 V
IC = −2 mA, IB = 0 −50 V
IE = −10 µA, IC = 0 −7V
2
*
VCE = −10 V, IC = −10 mA 85 340
VCE = −10 V, IC = −500 mA 40
= −300 mA, IB = −30 mA − 0.35 − 0.6 V
VCB = −10 V, IE = 10 mA, f = 200 MHz 200 MHz
T
VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF
ob
6.9±0.1
0.7 4.0
0.15
0.65 max.
+0.1
0.45
−0.05
2.5±0.5 2.5±0.5
123
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1.2±0.1
+
0.1
0.45
−
0.05
1.05
±0.05
1.0
0.85
+0.1
−0.05
0.45
1: Emitter
2: Collector
3: Base
MT1 Type Package
0.65
max.
2.5±0.1
2.5±0.1
Unit: mm
(1.45)
0.8
0.8
3.5±0.114.5±0.5
(HW Type)
1
Page 2
2SB1321A Transistors
PC T
800
)
700
mW
(
600
C
500
400
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (°C
V
I
)
−100
V
(
−30
CE(sat)
−10
−3
−1
− 0.3
− 0.1
− 0.03
− 0.01
Collector to emitter saturation voltage V
− 0.01 − 0.03
CE(sat)
Ta = 75°C
25°C
−25°C
− 0.1 − 0.3
Collector current IC (A
a
)
C
IC / IB = 10
−1 −3 −10
)
IC V
−
−
1 200
1 000
CE
)
mA
(
−800
C
−600
−400
Collector current I
−200
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
V
I
25°C
BE(sat)
Ta = −25°C
75°C
− 0.1 − 0.3
−100
)
V
(
−30
BE(sat)
−10
−3
−1
− 0.3
− 0.1
− 0.03
Base to emitter saturation voltage V
− 0.01
− 0.01 − 0.03
Collector current IC (A
Ta = 25°C
IB = −10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
C
IC / IB = 10
−1 −3 −10
)
−800
−700
)
−600
mA
(
C
−500
−400
−300
−200
Collector current I
−100
0
0 −10−8−6−4−2 −9−7−5−3−1
)
600
500
FE
400
300
Ta = 75°C
25°C
200
−25°C
Forward current transfer ratio h
100
0
− 0.01 − 0.03
IC I
B
VCE = −10 V
= 25°C
T
a
Base current IB (mA
h
I
FE
C
VCE = −10 V
− 0.1 − 0.3
−1 −3 −10
Collector current IC (A
)
)
fT I
240
220
200
)
180
MHz
(
160
T
140
120
100
80
60
Transition frequency f
40
20
0
1 3 10 30 100220550
E
VCB = −10 V
T
a
= 25°C
Emitter current IE (mA
2
C
V
ob
24
22
)
pF
20
(
ob
18
16
14
12
10
8
6
4
Collector output capacitance C
2
0
−3 −10 −30 −100−50−20−5−2
−1
)
Collector to base voltage VCB (V
CB
IE = 0
f = 1 MHz
= 25°C
T
a
−120
)
V
(
−100
CER
−80
−60
−40
−20
Collector to emitter voltage V
0
)
V
R
CER
1310 30 100 300 1 000
Base to emitter resistance RBE (kΩ
BE
IC = −2 mA
= 25°C
T
a
)
Page 3
Transistors 2SB1321A
I
T
)
T
(
I
a
CEO
4
10
3
10
)
= 25°C
2
a
10
T
(
CEO
I
10
1
0 2001601208040 1801401006020
Ambient temperature Ta (°C
CEO
a
VCE = −10 V
)
3
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