Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D049
1PS76SB10
Schottky barrier diode
Product specification
1996 Oct 14
Page 2
Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB10
FEATURES
• Low forward voltage
• Guard ring protected
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
• Very small plastic SMD package.
APPLICATIONS
handbook, 4 columns
ka
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
Marking code: S0.
The marking bar indicates the cathode.
MAM283
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
F
I
FRM
I
FSM
T
T
T
R
stg
j
amb
continuous reverse voltage
continuous forward current −
repetitive peak forward current tp≤ 1s;δ≤0.5
non-repetitive peak forward current tp<10ms
storage temperature
junction temperature
operating ambient temperature
−
−
−
−65
−
−65
30 V
200 mA
300 mA
600 mA
+150 °C
125 °C
+125 °C
1996 Oct 14 2
Page 3
Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB10
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
Note
1. Pulsed test: t
forward voltage see Fig.2
= 0.1 mA
I
F
I
= 1mA
F
=10mA
I
F
I
=30mA
F
I
= 100 mA
F
reverse current VR= 25 V; note 1; see Fig.3
diode capacitance f = 1 MHz; VR= 1 V; see Fig.4
= 300 µs; δ = 0.02.
p
240 mV
320 mV
400 mV
500 mV
800 mV
2
µA
10 pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 450 K/W
Note
1. Refer to SOD323 standard mounting conditions.
1996 Oct 14 3
Page 4
Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB10
GRAPHICAL DATA
3
10
handbook, halfpage
I
F
(3)(2)(1)
(mA)
2
10
10
1
1
10
(3)(2)(1)
VF (V)
(1) T
(2) T
(3) T
amb
amb
amb
= 125°C.
=85°C.
=25°C.
Fig.2 Forward current as a function of forward
voltage; typical values.
MSA892
MSA893
(1)
(2)
I
(µA)
3
10
R
2
10
10
1
1
1.20.80.40
10
0102030
(1) T
(2) T
(3) T
amb
amb
amb
= 125 °C.
=85°C.
=25°C.
(3)
V (V)
R
Fig.3 Reverse current as a function of reverse
voltage; typical values.
15
C
d
MSA891
(pF)
10
5
0
0102030
f = 1 MHz; T
amb
=25°C.
V (V)
R
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1996 Oct 14 4
Page 5
Philips Semiconductors Product specification
Schottky barrier diode 1PS76SB10
PACKAGE OUTLINE
handbook, full pagewidth
1.00
0.25
max
0.10
0.40
1.35
0.25
1.15
Dimensions in mm.
The marking bar indicates the cathode.
1.8
1.6
2.7
2.3
Fig.5 SOD323.
0.55
0.40
0.05
max
A
0.2 A
M
MBC672 - 1
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 14 5
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