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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1617AB35
35 Watts, 25 Volts, Class AB
Satcom 1600 - 1700 MHz
GENERAL DESCRIPTION
The 1617AB35 is a COMMON EMITTER transistor capable of providing 35
Watts of Class AB, RF output power over the band 1600 - 1700 MHz. This
transistor is specifically designed for
SATCOM COMMUNICATIONS
amplifier applications. It includes Input prematching and utilizes Gold
metalization and EMITTER BALLASTING to provide high reliability and
supreme ruggedness. .
CASE OUTLINE
55AR, STYLE 2
COMMON EMITTER
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 120 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 60 Volts
LVceo Collector to Emitter Voltage 27 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 14.0 Amps
Maxi mum Te mperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 230 C
o
A49
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
IMD
3
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
3rd Order IMD
F =1700 MHz
Vce = 25 Volts
Icq = 250 mAmps
As Above
As Above
As Above
35
9.0
10.0
50
4.5
3:1
-30
Watt
Watt
dB
%
dBc
BVces
LVceo
BVebo
Ices
h
FE
Cob
θ
jc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector Leakage Current
DC - Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ic = 50 mA
Ie = 10 mA
Vce = 27 Volts
Vce = 5 V, Ic = 0.7 A
F =1 MHz, Vcb = 28 V
Tc = 25 C
o
60
27
3.5
20
36
10
100
1.6
Volts
Volts
Volts
mA
pF
C/W
o
Issue January 1996
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Typical Performance
1617AB35
August 1996
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