Dallas Semiconductor DS1245YP-70-IND, DS1245YP-70, DS1245YP-100, DS1245Y-85, DS1245Y-70-IND Datasheet

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Dallas Semiconductor DS1245YP-70-IND, DS1245YP-70, DS1245YP-100, DS1245Y-85, DS1245Y-70-IND Datasheet

DS1245Y/AB

1024k Nonvolatile SRAM

www.dalsemi.com

FEATURES

10 years minimum data retention in the absence of external power

Data is automatically protected during power loss

Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory

Unlimited write cycles

Low-power CMOS

Read and write access times as fast as 70 ns

Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time

Full ± 10% VCC operating range (DS1245Y)

Optional ± 5% VCC operating range (DS1245AB)

Optional industrial temperature range of -40° C to +85° C, designated IND

JEDEC standard 32-pin DIP package

New PowerCap Module (PCM) package

-Directly surface-mountable module

-Replaceable snap-on PowerCap provides lithium backup battery

-Standardized pinout for all nonvolatile SRAM products

-Detachment feature on PowerCap allows easy removal using a regular screwdriver

PIN ASSIGNMENT

NC

 

1

32

 

 

 

VCC

 

 

A16

 

 

31

 

 

 

A15

 

 

2

 

 

 

 

A14

 

3

30

 

 

 

NC

 

 

A12

 

4

29

 

 

 

WE

 

 

A7

 

5

28

 

 

 

A13

 

 

A6

 

6

27

 

 

 

A8

 

 

A5

 

7

26

 

 

 

A9

 

 

A4

 

8

25

 

 

 

A11

 

 

A3

 

9

24

 

 

 

OE

 

 

A2

 

10

23

 

 

 

A10

 

 

A1

 

11

22

 

 

 

CE

 

 

 

 

A0

 

12

21

 

 

 

DQ7

 

 

DQ0

 

 

13

20

 

 

 

DQ6

 

 

 

 

 

 

DQ1

 

14

19

 

 

 

DQ5

 

 

DQ2

 

 

15

18

 

 

 

DQ4

 

 

 

 

 

GND

 

16

17

 

 

 

DQ3

 

 

 

 

 

 

 

 

 

 

 

 

32-PIN ENCAPSULATED PACKAGE

740 MIL EXTENDED

NC

 

 

1

 

 

 

 

 

34

 

 

 

NC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A15

 

 

2

 

 

 

 

 

33

 

 

 

NC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A16

 

 

3

 

 

 

 

 

32

 

 

 

A14

 

 

 

 

 

 

 

 

 

NC

 

 

4

 

 

 

 

 

31

 

 

 

A13

VCC

 

 

5

 

 

 

 

 

30

 

 

 

A12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WE

 

 

6

 

 

 

 

 

29

 

 

 

A11

 

 

 

 

 

 

 

 

 

OE

 

 

7

 

 

 

 

 

28

 

 

 

A10

 

 

 

 

 

 

 

 

 

CE

 

 

8

 

 

 

 

 

27

 

 

 

A9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQ7

 

 

9

 

 

 

 

 

26

 

 

 

A8

 

 

 

 

 

 

 

 

 

DQ6

 

 

10

 

 

 

 

 

25

 

 

 

A7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQ5

 

11

 

 

 

 

 

24

 

 

 

A6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQ4

 

12

 

 

 

 

 

23

 

 

 

A5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQ3

 

13

GND VBAT

22

 

 

 

A4

 

 

 

 

 

 

DQ2

 

14

 

 

 

 

 

21

 

 

 

A3

DQ1

 

15

 

 

 

 

 

20

 

 

 

A2

 

 

 

 

 

 

 

 

DQ0

 

16

 

 

 

 

 

19

 

 

 

A1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GND

 

17

 

 

 

 

 

18

 

 

 

A0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

34-PIN POWERCAP MODULE (PCM) (USES DS9034PC POWERCAP)

PIN DESCRIPTION

A0 - A16

- Address Inputs

DQ0 - DQ7

- Data In/Data Out

 

 

 

 

 

 

- Chip Enable

 

CE

 

 

 

 

 

- Write Enable

 

 

WE

 

 

 

 

- Output Enable

 

OE

VCC

- Power (+5V)

GND

- Ground

NC

- No Connect

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111899

DS1245Y/AB

DESCRIPTION

The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x 8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

READ MODE

The DS1245 executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable) and OE (Output Enable) are active (low). The unique address specified by the 17 address inputs (A0 - A16) defines which of the 131,072 bytes of data is to be accessed. Valid data will be available to the eight data output drivers within tACC (Access Time) after the last address input signal is stable, providing that CE and OE (Output Enable) access times are also satisfied. If OE and CE access times are not satisfied, then data access must be measured from the later occurring signal ( CE or OE ) and the limiting parameter is either tCO for CE or tOE for OE rather than address access.

WRITE MODE

The DS1245 executes a write cycle whenever the WE and CE signals are active (low) after address inputs are stable. The later occurring falling edge of CE or WE will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The OE control signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output drivers are enabled ( CE and OE active) then WE will disable the outputs in tODW from its falling edge.

DATA RETENTION MODE

The DS1245AB provides full functional capability for VCC greater than 4.75 volts and write protects by 4.5 volts. The DS1245Y provides full functional capability for VCC greater than 4.5 volts and writeprotects by 4.25 volts. Data is maintained in the absence of VCC without any additional support circuitry. The nonvolatile static RAMs constantly monitor VCC. Should the supply voltage decay, the NV SRAMs automatically write-protect themselves, all inputs become “don’t care,” and all outputs become high impedance. As VCC falls below approximately 3.0 volts, a power switching circuit connects the lithium energy source to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts, the power switching circuit connects external VCC to RAM and disconnects the lithium energy source. Normal RAM operation can resume after VCC exceeds 4.75 volts for the DS1245AB and 4.5 volts for the DS1245Y.

FRESHNESS SEAL

Each DS1245 device is shipped from Dallas Semiconductor with its lithium energy source disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than 4.25 volts, the lithium energy source is enabled for battery back-up operation.

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DS1245Y/AB

PACKAGES

The DS1245 devices are available in two packages: 32-pin DIP and 34-pin PowerCap Module (PCM). The 32-pin DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a single package with a JEDEC-standard 600-mil DIP pinout. The 34-pin PowerCap Module integrates SRAM memory and nonvolatile control along with contacts for connection to the lithium battery in the DS9034PC PowerCap. The PowerCap Module package design allows a DS1245 PCM device to be surface mounted without subjecting its lithium backup battery to destructive high-temperature reflow soldering. After a DS1245 PCM is reflow soldered, a DS9034PC PowerCap is snapped on top of the PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper attachment. DS1245 PowerCap Modules and DS9034PC PowerCaps are ordered separately and shipped in separate containers. See the DS9034PC data sheet for further information.

ABSOLUTE MAXIMUM RATINGS*

Voltage on Any Pin Relative to Ground Operating Temperature

Storage Temperature

Soldering Temperature

-0.3V to +7.0V

0°C to 70°C, -40°C to +85°C for Ind parts -40°C to +70°C, -40°C to +85°C for Ind parts 260°C for 10 seconds

*This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

 

 

 

(tA: See Note 10)

PARAMETER

SYMBOL

MIN

 

TYP

MAX

 

UNITS

NOTES

DS1245AB Power Supply Voltage

VCC

4.75

 

5.0

5.25

 

V

 

DS1245Y Power Supply Voltage

VCC

4.5

 

5.0

5.5

 

 

V

 

Logic 1

VIH

2.2

 

 

VCC

 

V

 

Logic 0

VIL

0.0

 

 

0.8

 

 

V

 

DC ELECTRICAL

 

 

 

(VCC=5V ±

5% for DS1245AB)

CHARACTERISTICS

(tA: See Note 10) (VCC=5V ±

10% for DS1245Y)

PARAMETER

SYMBOL

MIN

 

TYP

MAX

 

UNITS

NOTES

Input Leakage Current

IIL

-1.0

 

 

+1.0

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I/O Leakage Current

 

≥ VIH ≤ VCC

IIO

-1.0

 

 

+1.0

 

A

 

CE

 

 

 

 

Output Current @ 2.4V

IOH

-1.0

 

 

 

 

 

mA

 

Output Current @ 0.4V

IOL

2.0

 

 

 

 

 

mA

 

Standby Current

 

 

=2.2V

ICCS1

 

 

5.0

10.0

 

mA

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Standby Current

 

 

 

=VCC-0.5V

ICCS2

 

 

3.0

5.0

 

 

mA

 

CE

 

 

 

 

 

Operating Current

ICCO1

 

 

 

85

 

 

mA

 

Write Protection Voltage (DS1245AB)

VTP

4.50

 

4.62

4.75

 

V

 

Write Protection Voltage (DS1245Y)

VTP

4.25

 

4.37

4.5

 

 

V

 

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DS1245Y/AB

 

CAPACITANCE

 

 

 

 

 

 

 

 

 

 

 

 

 

(tA=25° C)

 

PARAMETER

 

SYMBOL

 

MIN

 

TYP

 

MAX

UNITS

 

NOTES

 

Input Capacitance

 

CIN

 

 

 

 

 

5

 

10

 

pF

 

 

 

Input/Output Capacitance

 

CI/O

 

 

 

 

 

5

 

10

 

pF

 

 

 

AC ELECTRICAL

 

 

 

 

 

 

 

 

(VCC=5V ±

5% for DS1245AB)

 

CHARACTERISTICS

 

(tA: See Note 10) (VCC=5V ±

10% for DS1245Y)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DS1245AB-70

DS1245AB-85

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DS1245Y-70

DS1245Y-85

 

 

 

 

PARAMETER

SYMBOL

 

MIN

 

MAX

 

MIN

MAX

UNITS

 

NOTES

 

Read Cycle Time

tRC

 

70

 

 

 

 

 

85

 

 

 

ns

 

 

 

Access Time

tACC

 

 

 

 

70

 

 

 

 

85

ns

 

 

 

 

 

 

 

to Output Valid

tOE

 

 

 

 

35

 

 

 

 

45

ns

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

to Output Valid

tCO

 

 

 

 

70

 

 

 

 

85

ns

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

or

 

to Output Active

tCOE

 

5

 

 

 

 

 

5

 

 

 

ns

 

5

 

 

OE

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output High Z from Deselection

tOD

 

 

 

 

25

 

 

 

 

30

ns

 

5

 

Output Hold from Address Change

tOH

 

5

 

 

 

 

 

5

 

 

 

ns

 

 

 

Write Cycle Time

tWC

 

70

 

 

 

 

 

85

 

 

 

ns

 

 

 

Write Pulse Width

tWP

 

55

 

 

 

 

 

65

 

 

 

ns

 

3

 

Address Setup Time

tAW

 

0

 

 

 

 

 

0

 

 

 

ns

 

 

 

Write Recovery Time

tWR1

 

5

 

 

 

 

 

5

 

 

 

ns

 

12

 

 

 

 

 

 

 

 

 

 

 

 

tWR2

 

15

 

 

 

 

 

15

 

 

 

ns

 

13

 

Output High Z from

 

 

 

tODW

 

 

 

 

25

 

 

 

 

30

ns

 

5

 

WE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Active from

 

 

 

tOEW

 

5

 

 

 

 

 

5

 

 

 

ns

 

5

 

WE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Data Setup Time

tDS

 

30

 

 

 

 

 

35

 

 

 

ns

 

4

 

Data Hold Time

tDH1

 

0

 

 

 

 

 

0

 

 

 

ns

 

12

 

 

 

 

 

 

 

 

 

 

 

 

tDH2

 

10

 

 

 

 

 

10

 

 

 

ns

 

13

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