Cypress Semiconductor CY7C006-25JI, CY7C006-25JC, CY7C006-25AC, CY7C006-15JC, CY7C006-15AC Datasheet

...
with Sem, Int, Busy
Features
• 16K x 8 organizat ion (CY7C006)
• 16K x 9 organizat ion (CY7C016)
• 0.65-micron CMOS for optim um speed/power
• High-speed access: 15 ns
• Low op e rating pow er: I
= 140 mA (typ.)
CC
• Fully asy nchronous operation
• Automatic power-down
• TTL compatible
• Expandab le dat a bus to 16/18 bits or more using Master/Slave chip select when using more than one device
• Busy arbitration scheme provided
• Semaphores i ncluded to per mit software hand shaking between ports
flag for port-to-port communication
•INT
• Available in 68-pin PLCC (7C006), 64-pin (7C006) and 80-pin (7 C016) TQFP
• Pin compatible and functional equivalent to IDT7006/IDT7016
Functional Description
The CY7C006 and CY7C016 are high-speed CMOS 16K x 8 and 16K x 9 dual-port static RAMs. Various arbitration
CY7C006 CY7C016
16K x 8/9 Dual-Port Static RAM
with Sem, Int, Busy
schemes are included on the CY7C006/016 to handle situa­tions when mul tiple processors access t he same pi ece of d ata. Two ports are provided, permitting independent, asynchro­nous access for reads and writes to any location in memory. The CY7C006/016 can be utilized as a standalone 128-/144-Kbit dual-port static RAM or multiple devices can be combined in order to function as a 16-/18-bit or wider mas­ter/slave dual-port static RAM. An M/S plementing 16-/18-bit or wider memory applications without the need for separate master and slave devices or additional discrete logic. Application areas include interprocessor/multi­processor designs, communications status buffering, and du­al-port video/grap hics memory.
Each port has independent control pins: Chip Enable (CE Read or Write Enable (R/W flags, BUSY
and INT, are provided on each port. BUSY signals
), and Output Enable (OE). Two
that the port is trying to access the same location currently being accessed by t he other port. The Int errupt fla g (INT mits communication between ports or systems b y means of a mail box. The semaphores are used to pass a flag, or token, from one port to the other to indica te that a shared r esource i s in use. The semaphore logic is comprised of eight shared latches. Only one side can control the latch (semaphore) at any time. Control of a semaphore indicates that a shared re­source is in use. An automatic power-down feature is con­trolled independently on each port by a Chip Enable (CE or SEM
pin.
The CY7C006 and CY7C016 are available in 68-pin PLCC (CY7C006), 64-pin (CY7C006) TQFP, and 80-pin (CY7C016) TQFP.
pin is provided for im-
),
) per-
) pin
R/W
CE OE
I/O
I/O
BUSY
A
A
13L
L
L L
8L 7L
0L
[1,2]
L
0L
SEM
L
[2]
INT
L
Logic Block Diagram
(7C016)I/O
Notes:
1. BUSY
2. Interrupt: push-pull output and requires no pull-up resistor.
is an output in master mode and an input in slave mode.
ADDRESS
DECODER
CE OE
R/W
I/O
CONTROL
L
L L
MEMORY
ARRAY
INTERRUPT
SEMAPHORE
ARBITRATION
M/S
I/O
CONTROL
ADDRESS DECODER
CE
R
OE
R
R/W
R
SEM INT
R [2]
R
R/W
R
CE
R
OE
R
I/O8R(7C016) I/O
7R
I/O
0R
[1,2]
BUSY
R
A
13R
A
0R
C006-1
Cypress Semiconductor Corporation
3901 North First Street San Jose CA 95134 408-943-2600 December 22, 1999
Pin Configurations
I/O I/O I/O I/O
GND I/O I/O
V
GND
I/O I/O I/O
V
I/O I/O I/O I/O6
CY7C006 CY7C016
68-Pin PLCC
Top View
)
[3]
8L
L
L
0L
OE
I/O1LI/O
NC(I/O
987654321
10
2L
11
3L 4L
12
5L
13 14
6L
15
7L
16 17
CC
18
0R
19
1R
20
2R
21
CC
22
23
3R
24
4R 5R
25
R
26
2930313233683467356636653764386339
)
R
7R
[3]
OE
8R
I/O
R
R/W
R
R
CE
SEM
CELSEMLR/W
CY7C006
NC
NC(I/O
NC
A
13R
13L
A
GND
CC
V
12RA11RA10R
A
12LA11LA10LA9LA8LA7LA6L
A
62
40
4127422843
6R
A9RA8RA7RA
61
60
A
5L
59
A
4L
58
A
3L
57
A
2L
56
A
1L
55
A
0L
54
INT
L
BUSY
53 52 51 50 49
48 47 46 45 44
5R
A
GND M/S BUSY
INT
A
0R
A
1R
A
2R
A
3R
A
4R
L
R
R
C006-2
Note:
3. I/O for CY7C016 only.
I/O I/O
I/O I/O GND I/O I/O
V
GND I/O I/O I/O
V I/O I/O I/O
64-Pin TQFP
Top View
L
L
L
0L
OE
I/O1LI/O
R/W
2L 3L
4L 5L
1 2 3 4
13L
CC
V
A
CELSEM
12LA11LA10LA9LA8LA7LA6L
A
5
6L 7L
CC
6 7 8
CY7C006
9
0R 1R 2R
CC
3R 4R 5R
10 11 12 13 14
15 16
17641863196220612160225923582457255626552754285329523051315032
R
R
R
R
6R
7R
OE
I/O
I/O
R/W
SEM
CE
A
13R
A
GND
12RA11RA10R
A9RA8RA7RA
5L
A
49
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33
5R
6R
A
A
4L
A
3L
A
2L
A
1L
A
0L
INT BUSY GND M/S
BUSY INT A
0R
A
1R
A
2R
A
3R
A
4R
L
L
R
R
C006-3
2
CY7C006 CY7C016
Pin Configurations
(continued)
NC
I/O
2L
I/O
3L
I/O
4L
I/O
5L
GND
I/O
6L
I/O
7L
V
CC
NC
GND
I/O
0R
I/O
1R
I/O
2R
V
CC
I/O
3R
I/O
4R
I/O
5R
I/O
6R
NC
80-Pin TQFP
Top View
L
L
8L
1L
OE
I/O0LI/O
I/O
8079787776757473727170696867666465
1 2 3 4 5 6 7 8 9
10 11 12 13 14 15
16 17 18 19 20
2122232425262728293031323334353736
R
R
R
R
7R
I/O
I/O
8R
OE
R/W
SEM
CE
NC
CELSEMLR/W
NCANC
13L
A
NC
CY7C016
13R
GND
12LA11LA10LA9LA8LA7LA6L
CC
V
A
12RA11RA10R
A
A9RA8RA7RA
6R
NC
636261
383940
5R
NC
A
NC
NC
NC
60
A
5L
59
A
4L
58
A
3L
57
A
2L
56
A
1L
55
A
0L
54
INT BUSY GND M/S
BUSY INT
A
0R
A
1R
A
2R
A
3R
A
4R
NC NC
C006-4
L
L
R
R
53 52
51 50 49 48 47 46
45 44 43 42 41
Pin Definitions
Left Port Right Port Description
I/O
0L–7L(8L)
A
0L–13L
CE
L
OE
L
R/W
L
SEML SEM
INT
L
BUSY
L
M/S Master or Slave Select V
CC
GND Ground
I/O
0R–7R(8R)
A
0R–13R
CE
R
OE
R
R/W
INT
R
BUSY
Data Bus Input/Output Address Lines Chi p E nable Output Enable
R
R
Read/Write Enable Semaphore Enable. When asserted LOW, allows access to eight sema-
phores. The three least significant bits of the address lines will dete rmine which semaphore to write or read. The I/O semaphore. Semaph ores are requested by writi ng a 0 into the respective location.
Interrupt Flag. INTL is set when right port writes location 3FFE and is cleared when left port reads loc ation 3FFE. I NT location 3FFF and is clear ed when right port reads location 3FFF.
R
Busy Flag
Power
pin is used when writing to a
0
is set when left port writes
R
3
CY7C006 CY7C016
Selection G uide
7C006-15 7C016-15
Maximum Access Time (ns) 15 25 35 55 Maximum Operating
260 220 210 200
Current (mA) Maximum Standby
Current for I
SB1
(mA)
70 60 50 40
7C006-25 7C016-25
7C006-35 7C016-35
7C006-55 7C016-55
Maximum Ratings
(Abov e which the useful lif e m ay be impaired. For user guide­lines, not tested.)
Storage Temperature .............. ...................–65°C to +1 5 0°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential...............–0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State............................................... –0.5V to +7.0V
[4]
DC Input Voltage
Electrical Characteristics
......................................... –0.5V to +7.0V
Over the Operating Range
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage ......................... .. ............... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current............. ............ ............ ............ ... >200 mA
Operating Range
Range
Commercial 0°C to +70°C 5V ± 10% Industrial –40°C to +85°C 5V ± 10%
7C006-15 7C016-15
Ambient
Temperature V
7C006-25 7C016-25
CC
Parameter Description T est Conditions Min. Typ. Max. Min. Typ. Max. Unit
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1
I
SB2
I
SB3
I
SB4
Notes:
4. Pulse width < 20 ns.
5. f
MAX
Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 2.4 V Output LOW Voltage VCC = Min., IOL = 4.0 mA 0.4 0.4 V
2.2 2.2 V Input LOW Voltage 0.8 0.8 V Input Leakage Current GND VI V
CC
Output Leakage Current Outputs Disabled, GND ≤ VO V Operating Current VCC = Max., I
Outputs Disabled
Standby Current (Both Ports TTL Levels)
Standby Current (One Port TTL Level)
Standby Current (Both Ports CMOS Levels)
Standby Current (One Port CMOS Level)
= 1/tRC = All inputs c ycling at f = 1/tRC (except output enab le) . f = 0 mea ns no add ress or contr ol lines change . T his appl ies onl y to inpu ts at C MOS le v el s tandby I
CEL and CER VIH, f = f
CEL or CER VIH, f = f
MAX
MAX
[5]
[5]
Both Ports CE
and CER VCC – 0.2V,
V
VCC – 0.2V
IN
or V
0.2V, f = 0
IN
One Port CE
or CER VCC – 0.2V,
L
V
VCC – 0.2V or
IN
V
0. 2V, Active
IN
Port Outputs, f = f
OUT
= 0 mA
[5]
[5]
MAX
Com’l 170 260 160 220 mA Ind 160 270 Com’l 50 70 40 60 mA Ind 40 75 Com’l 110 170 90 130 mA Ind 90 150 Com’l 3 15 3 15 mA Ind 3 15
Com’l 100 150 80 120 mA Ind 80 130
10 +10 10 +1010 +10 10 +10
CC
µA µA
SB3
.
4
CY7C006 CY7C016
Electrical Characteristics
(continued)
7C006-35 7C016-35
7C006-55 7C016-55
Parameter Description T est Conditions Min. Typ. Max. Min. Typ. Max. Unit
V V V V I
IX
I
OZ
I
CC
I
SB1
I
SB2
I
SB3
I
SB4
OH OL IH IL
Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 2.4 V Output LOW Voltage VCC = Min., IOL = 4.0 mA 0.4 0.4 V
2.2 2.2 V Input LOW Voltage 0.8 0.8 V Input Leakage Current GND VI V
CC
Output Leakage Current Outputs Disabled, GND ≤ VO V Operating Current VCC = Max., I
Outputs Disabled
Standby Current (Both Ports TTL Levels)
Standby Current (One Port TTL Level)
Standby Current (Both Ports CMOS Levels)
Standby Current (One Port CMOS Level)
CEL and CER VIH, f = f
CEL or CER VIH, f = f
MAX
MAX
[5]
[5]
Both Ports CE
and CER VCC – 0.2V,
V
VCC – 0.2V
IN
or V
0.2V, f = 0
IN
One Port CE
or CER VCC – 0.2V,
L
V
VCC – 0.2V or
IN
V
0. 2V, Active
IN
Port Outputs, f = f
OUT
= 0 mA
[5]
[5]
MAX
Com’l 150 210 140 200 mA Ind 150 250 140 240 Com’l 30 50 20 40 mA Ind 30 65 20 55 Com’l 80 120 70 100 mA Ind 80 130 70 115 Com’l 3 15 3 15 mA Ind 3 15 3 15
Com’l 70 100 60 90 mA Ind 70 110 60 95
10 +10 10 +1010 +10 10 +10
CC
µA µA
Capacitance
[6]
Parameter Description Test Conditions Max. Unit
C
IN
C
OUT
Input Capacitance TA = 25°C, f = 1 MHz,
V
= 5.0V
Output Capacitance 10 pF
CC
AC Test Loads and Waveforms
5V
R1=893
R2=347
C006-5
C006-8
OUTPUT
C= 30
pF
(a) Normal Load (Load 1)
OUTPUT
C = 30 pF
Load (Load 2)
Note:
6. Tested initially and after any design or process changes that may affect these parameters.
3.0V
GND
OUTPUT
C=30 pF
(b) ThéveninEquivalent (Load)
ALL INPUT PULSES
90%
10%
3ns
=250
R
TH
10 pF
5V
R1=893
R2=347
=1.4V
V
TH
90%
10%
OUTPUT
C= 5pF
C006-6 C006-7
ns
3
C006-9
(c) Three-State Delay (Load 3)
5
CY7C006 CY7C016
Switching Characteristics
Over the Operating Range
[7]
7C006-15 7C016-15
7C006-25 7C016-25
7C006-35 7C016-35
7C006-55 7C016-55
Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
[8, 9, 10]
[8, 9, 10]
[8, 9, 10]
[8, 9, 10] [10] [10]
Read Cycle Time 15 25 35 55 ns Address to Data Valid 15 25 35 55 ns Output Hold From Address Change 3 3 3 3 ns CE LOW to Data Valid 15 25 35 55 ns OE LOW to Data Valid 10 13 20 25 ns OE Low to Low Z 3 3 3 3 ns OE HIGH to High Z 10 15 15 25 ns CE LOW to Low Z 3 3 3 3 ns CE HIGH to High Z 10 15 15 25 ns CE LOW to Po wer-Up 0 0 0 0 ns CE HIGH to Power-Do wn 15 25 35 55 ns
WRITE CYCLE
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
[11]
t
HD
[9, 10]
t
HZWE
[9, 10]
t
LZWE
[12]
t
WDD
[12]
t
DDD
BUSY TIMING
t
BLA
t
BHA
t
BLC
t
BHC
t
PS
t
WB
t
WH
[14]
t
BDD
Notes:
7. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V , input pulse levels of 0 to 3.0V, and output loading of the specified I
OI/IOH
8. At any given temperature and voltage condition for any given device, t
9. Test conditions used are Load 3.
10. This parameter is guaranteed but not tested.
11. Must be met by the device writing to the RAM under all operating conditions.
12. For information on part-to-part delay through RAM cells from writing port to reading port, refer to Read Timing with Port-to-Port Delay waveform.
13. Test conditions used are Load 2.
14. t
BDD
Write Cycle Time 15 25 35 55 ns CE LOW to Write End 12 20 30 45 ns Address Set-Up to Write End 12 20 30 45 ns Address Hold From Write End 0 0 0 0 ns Address Set-Up to Write Start 0 0 0 0 ns Write Pulse Width 12 20 25 40 ns Data Set-Up to Write End 10 15 15 25 ns Data Hold Fro m Write End 0 0 0 0 ns R/W LO W to High Z 10 15 20 25 ns R/W HIGH to Low Z 3 3 3 3 ns Write Pulse to Data Delay 30 50 60 80 ns Write Da ta V a lid to Re a d Data Valid 25 30 35 60 ns
[13]
BUSY LOW from Address Match 15 20 20 30 ns BUSY HIGH from Address Mismatc h 15 20 20 30 ns BUSY LOW from CE LOW 15 20 20 30 ns BUSY HIGH from CE HIGH 15 17 25 30 ns Port Set-Up for Priority 5 5 5 5 ns R/W LO W after BUSY LOW 0 0 0 0 ns R/W HIGH after BUSY HIGH 13 17 25 30 ns BUSY HIGH to Data Valid Note 13 Note 13 Note 13 Note 13 ns
and 30-pF load c apacitanc e.
is a calculated pa rameter and is the gr eat er of t
WDD
– t
(actual) or t
PWE
is less than t
HZCE
– tSD (actual).
DDD
LZCE
and t
HZOE
is less than t
LZOE
.
6
CY7C006 CY7C016
Switching Characteristics
Over the Operating Range
[7]
(continued)
7C006-15 7C016-15
7C006-25 7C016-25
7C006-35 7C016-35
7C006-55 7C016-55
Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Unit
INTERRUPT TIMING
t t
INS INR
INT Set Time 15 25 25 30 ns INT Reset Time 15 25 25 30 ns
[13]
SEMAPHORE TIMING
t
SOP
t
SWRD
t
SPS
SEM Flag Update Pulse (OE or SEM) 10 10 15 20 ns SEM Flag Write to Read Time 5 5 5 5 ns SEM Flag Contention Window 5 5 5 5 ns
Switching Waveforms
Read Cycle No. 1 (Eith er Port Address Access)
ADDRESS
t
OHA
DATA OUT
[15, 16]
t
RC
t
AA
DATA VALI DPREVIOUS DATA VALID
C006-10
t
ACE
[15, 17, 18 ]
t
DOE
DATA VALI D
Read Cycle No. 2 (Either Port CE/OE Acce ss)
or CE
SEM
OE
t
LZOE
t
LZCE
DATA OUT
t
I
CC
I
SB
Notes:
15. R/W
is HIGH for read cycle.
16. Device is continuously selected CE = LO W a nd OE = LO W. This w av ef orm cann ot be used f or semaphor e reads .
17. Address valid prior to or coincident with CE
18. CEL = L, SEM = H when access ing RAM. CE = H, SEM = L whe n accessing sema phores .
PU
transition LOW .
t
HZOE
t
HZCE
t
PD
C006-11
7
CY7C006 CY7C016
Switching Waveforms
Read Timing with Port-to-Port Delay (M/S=L)
ADDRESS
DATA IN
ADDRESS
DAT A
R/W
OUTL
R
R
R
L
(continued )
[19, 20]
MATCH
MATCH
Write Cycle No. 1: OE Three- Sta te Data I/O s (E ither Port )
ADDRESS
t
SEMOR CE
R/W
SCE
t
AW
t
WC
[21, 22, 23]
t
WC
t
PWE
t
PWE
t
WDD
t
SD
VALID
t
DDD
t
HD
VALID
C006-12
t
HA
DATA I N
t
SA
t
SD
DATA VALID
t
HD
OE
t
HZOE
DA TA OUT
Notes:
19. BUSY
20. CEL = CER = LOW.
21. The internal write time of the memory is defined by the overlap of CE
22. If OE is LO W during a R/W controlled write cy cle, the write pulse widt h must be the larger of t
23. R/W
= HIGH for the writing port.
terminate a write by going HIGH. The data i np ut set- up and hold timi ng sh ould be r ef erenced t o the rising edge of the signal that terminates t he writ e. the bus for the required t
specified t
.
PWE
must be HIGH dur ing all addres s trans itions .
. If OE is HIGH during a R/W controll ed write cycle (as in this example), this requirement does not apply and the w rite pulse can be as short as the
SD
HIGH IMPEDANCE
or SEM LOW and R/W LOW . Both s ignals must be LO W to initiate a wr ite, and either signal can
or (t
PWE
+ tSD) to allow the I/O driver s to turn off and data to be placed on
HZWE
t
LZOE
C006-13
8
CY7C006 CY7C016
Switching Waveforms
(continued )
Write Cycle No. 2: R/W Three- State Data I/Os (Either P ort)
t
ADDRESS
t
SCE
ORCE
SEM
t
[25]
AW
t
HZWE
t
R/W
SA
DATA I N
OUT
DAT A
Semaphore Read After Write Timing, Either Side
A0–A
2
VALID ADDRESS VALID ADDRESS
[20, 22, 24 ]
WC
t
PWE
t
SD
DA TA VALID
HIGH IMPEDANCE
t
AA
t
HA
t
HD
t
LZWE
C006-14
t
OHA
t
AW
t
SEM
I/O
t
SCE
0
t
SA
t
PWE
HA
t
SD
DA TAINVALID
t
HD
R/W
OE
WRITE CYCLE READ CYCLE
Notes:
24. Data I/O pins enter high-impedance when OE
25. CE = HIGH for the dur ation of the abo ve t iming (both wr ite and read c ycle).
is held LOW during w rite.
t
SWRD
t
SOP
t
SOP
t
ACE
t
DOE
DA TA
OUT
VALID
C006-15
9
CY7C006 CY7C016
Switching Waveforms
Semaphore Contention
A0L–A
2L
R/W
L
SEM
L
A0R–A
2R
R/W
R
SEM
R
(continued )
[26, 27, 28]
Read with BUSY (M/S=HIGH)
ADDRESS
R
[19]
MATCH
t
SPS
MATCH
t
WC
MATCH
C006-16
R/W
R
DATA IN
ADDRESS
DAT A
BUSY
OUTL
R
t
PS
L
L
Write Timing with Busy Input (M/S=LOW)
R/W
BUSY
t
WB
t
BLA
MATCH
t
PWE
t
PWE
t
WH
t
SD
VALID
t
WDD
t
DDD
t
HD
t
BHA
t
BDD
VALID
C006-17
Notes:
26. I/O
27. Semaphores are reset (available to both ports) at cycle start.
28. If t
= I/O0L = LOW (reques t semaph ore); CER = CEL = HIGH.
0R
is violated, the s emaphore w ill de fini tely be obt ai ned b y one si de or the ot her , b ut ther e is no gua ra ntee w hich s ide will control the semaphore.
SPS
C006-18
10
CY7C006 CY7C016
Switching Waveforms
(continued )
Busy Timing Diagram No. 1 (CE CELVali d Fi rs t:
ADDRESS
CE
R
ADDRESS
L,R
CE
L
CE
R
BUSY
R
Valid First:
L,R
CE
R
CE
L
BUSY
L
Arbitration)
t
PS
t
PS
[29]
ADDRESS MATCH
t
ADDRESS MATCH
t
BLC
BLC
t
BHC
t
BHC
C006-19
C006-20
Busy Timing Diagram No. 2 (Address Arbitration)
Left AddressValid First:
or t
t
RC
WC
ADDRESS
ADDRESS
BUSY
L
R
R
ADDRESS MATCH
t
PS
t
BLA
Right Address Valid First:
tRCor t
WC
ADDRESS
ADDRESS
Notes:
29. If t
30. t
HA
31. t
INS
R
L
BUSY
L
is violated, the bus y s ignal will be asserted on one side or the other, but t here i s no guara ntee on whic h si de BU SY will be asserted.
PS
depends on which enab le pin ( CEL or R/WL) is deasserted first.
or t
depends on which ena ble p in (C EL or R/WL) is asserted last.
INR
ADDRESS MATCH ADDRESS MISMATCH
t
PS
t
BLA
[28]
ADDRESS MISMATCH
t
BHA
t
BHA
C006-21
C006-22
11
CY7C006 CY7C016
Switching Waveforms
Interrupt Timing Diagrams
Left Sid e Sets IN T
ADDRESS
CE
R/W
INT
L
L
L
R
Right Side Clears INTR:
ADDRESS
CE
R/W
OE
R
R
R
R
:
R
(continued )
WRITE 3FFF
31]
[
t
INS
t
WC
t
INR
[30]
t
HA
C006-23
t
RC
READ 3FFF
INT
R
Right Side Sets INTL:
ADDRESS
CE
R/W
INT
R
R
R
L
Left Side Clears INTL:
ADDRESS
CE
R/W
OE
R
L
L
L
WRITE 3FFF
[30]
t
INS
t
WC
t
INR
C006-24
[30]
t
HA
C006-25
t
RC
READ 3FFF
INT
L
C006-26
12
CY7C006 CY7C016
Architecture
The CY7C006/016 consists of a an array of 16K words of 8/9 bits each of dual-port RAM cells, I/O and address lines, and control signals (CE dent access for reads or writes to any location in memory. To handle simultaneous writes/reads to the same location, a BUSY vided on each por t. Two Interrupt (INT port-to-port communication. Two Semaphore (SEM used for allocating shared resources. With the M/S CY7C006/016 can function as a Master (BUSY as a slave (BUSY matic power-down feature controlled by CE with its own Output Enable control (OE from the device.
, OE, R/W). These control pins permit indepen-
pin is pro-
) pins can be utilized for
) control pins are
pin, the
pins are outputs) or
pins are inputs). The CY7C006/016 has an auto-
. Each port is provided
), which allows data to be read
Interrupts
The interrupt flag (INT
) permits communications between p orts. When the left port writes to location 3FFF(HEX), the right ports i nter­rupt flag (INT that same location. Setting the left por ts interrupt flag (INT
) is set. This flag is cleared when the right port reads
R
L
complished when the right p ort writes to locat ion 3FFE(HEX). This flag is cleared when the left port reads location 3FFE(HEX). The mes­sage at 3FFE(HEX) and 3FFF(HEX) is user-defined. See Table 2 for input requirements for INT
. INTR and INTL are push-pull outputs and
do not require pull-up resistors to operate.
Busy
The CY7C006/016 provides on-chip arbitration to resolve si­multaneous memory location access (contention). If both ports CE
s are asserted and an address match occurs within tPS of
each other the Busy logic will determine which port has access. If t
Functional Description
Write Operation
Data must be set up for a duration of t of R/W
in order to guarantee a valid write. A write operation is con­trolled by either the OE R/W
pin (see Write Cycle No. 2 waveform). Data can be written to the device t edge of R/W
after the OE is deasserted or t
HZOE
. Required inputs for non-contention operations are sum-
pin (see Write Cycle No.1 waveform) or the
marized in T able 1 . If a location is being written to by one port and the opposite
port attempts to read that location, a port-to-port flowthrough delay must be met before the data is read on the output; oth­erwise the data read i s not deterministic. Data will be valid on the port t
after the data is presented on the other port.
DDD
Table 1. Non-Contending Read/Write
Inputs Outputs
CE R/W OE SEM I/O
0–7/8
H X X H High Z Power-Down H H L L Data Out Read Data in
X X H X High Z I/O Lines Disab led H X L Data In Write to Semaphore
L H L H Data Out Read L L X H Data In Write L X X L Illega l C ondition
Read Operation
When reading the device, the user must assert both the OE and CE pins. Data will be available t asserted. If the user of the CY7C006/016 wishes to access a sema­phore flag, then the SEM
pin must be asserted instead of the CE pin.
ACE
before the rising edge
SD
afte r the fa ll in g
HZWE
Operation
Semaphore
after CE or t
DOE
after OE are
is violated, one port will definitely gain permission to the location, but it is not guaranteed which one. BUSY address match or t in master mode are push-pull outputs and do not require pull-up re-
after CE is taken LOW . BUSYL and BUSY
BLC
will be asserted t
BLA
after an
sistors to operate.
Master/Slave
An M/S
pin is provided in order to expand the word width by config­uring the device as either a master or a slave. The BUSY the master is connected to the BUSY
input of the slave. This will allow
output of
the device to interface to a master device with no external compo­nents. Writing of slave devices must be delayed until after the BUSY input has settled (t cycle during a con ten tion situati on. W hen pr esented a HIGH input, the M/S
pin allows the device to be used as a master and therefore
the BUSY
line is an o utput. BUSY can then be used to send the
). Otherwise, the slave chip may begin a write
BLA
arbitration outcome to a slave.
Semaphore Operation
The CY7C006/016 provides eight semaphore latches which are separate from the dual-port memory locations. Sema­phores are used to reserve resources tha t are shared between the two ports.The state of the semaphore indicates that a re­source is in use. For example, if the left port wants to request a given resource, it sets a latch by writing a 0 to a semaphore location. The left port then verifies its success in setting the latch by reading it. After writing to the semaphore, SEM must be deasserted for t phore. The semaphore value will be available t rising edge of the sem aphore write. If the left por t was successful
before attempting to read the sema-
SOP
SWRD
+ t
DOE
after the
(reads a 0), it assumes control over the shared resource, otherwise (reads a 1) it assumes the right port has control and continues to poll the semaphore.When the ri ght side has relinquished co ntrol of the semaphore (by writing a 1), the left side will succeed in gaining control of the semaphore. If the left side no longer requires the semaphore, a 1 is written to cancel its request.
T able 2. Interrupt Operati on Exam ple (assumes BUSYL=BUSYR=HIGH)
Left Port Right Port
Function R/W CE OE A
0L–13L
INT R/W CE OE A
0R–13R
Set Left INT X X X X L L L X 3FFE X Rese t Left INT X L L 3FFE H X L L X X Set Right INT L L X 3FFF X X X X X L Reset Right INT X X X X X X L L 3FFF H
) is ac -
PS
R
or OE
INT
13
CY7C006 CY7C016
Semaphores are accessed by asserting SEM pin functions as a chip enable for the semaphore latches (CE must remain HIGH during SEM address. OE memory access.When writing or reading a semaphore, the other ad­dress pins have no eff ect.
When writing t o the semap hore , onl y I/ O to the left port of an unused semaphore, a 1 will appear at the same semaphore address on the right port. That semaphore can now only be modified by the side showing 0 (the left port in this case). If the left port now rel inquishes control by writing a 1 to the semaph ore, the semaphore will be set to 1 for both sides. Howev er, if the right port had requested the semaphore (written a 0) while the left port had control,
T able 3. Semaphore Operation Example
No action 1 1 Semaphore free Left port writes semaphore 0 1 Left port obtains semaphore Right port writes 0 to semaphore 0 1 Right side is denied access Left port writes 1 to semaphore 1 0 Right port is granted access to semaphore Left port writes 0 to semaphore 1 0 No change. Left port is denied access Right port writes 1 to semaphore 0 1 Left port obtains semaphore Left port writes 1 to semaphore 1 1 No por t accessing semaphore address Right port writes 0 to semaphore 1 0 Right port obtains semaphore Right port writes 1 to semaphore 1 1 No port accessing semaphore Left port writes 0 to semaphore 0 1 Left port obtains semaphore Left port writes 1 to semaphore 1 1 No por t accessing semaphore
and R/W are used in t he same manner as a norm al
LOW). A
Function I/O
represents the semaphor e
0–2
LOW. The SEM
is used. If a 0 is written
0
Left I/O
0-7/8
the right port would immediately own the semaphore as soon as the left port released it. Table 3 shows sample semaphore operations.
When reading a semaphore, all eight data lines output the semaphore value. The read value is latched in an output reg­ister to prevent the semaphore from changing state during a write from the other port. If both por ts attempt to access the semaphore withi n t be obtained by one side or the other, but there is no guarantee which side will control the semaphore.
Initialization of the semaphore is not automatic and must be reset during initialization program at power-up. All Sema­phores on both sides should have a one written into them at init ializat ion from both sides to assure t hat they will b e free when needed.
Right Status
0-7/8
of each other, the semaphore will definitely
SPS
Ordering Information
16K x8 Dual-Port SRAM
Speed
(ns) Ordering Code
15 CY7C006-15AC A65 64-Lead Thin Quad Flat Package Co mme rcial
CY7C006-15JC J81 68-Lead Plastic Leaded Chip Carrier
25 CY7C006-25AC A65 64-Lead Thin Quad Flat Package Co mme rcial
CY7C006-25JC J81 68-Lead Plastic Leaded Chip Carrier CY7C006-25AI A65 64-Lead Thin Quad Flat Package Industrial CY7C006-25JI J81 68-Lead Plastic Leaded Chip Carrier
35 CY7C006-35AC A65 64-Lead Thin Quad Flat Package Co mme rcial
CY7C006-35JC J81 68-Lead Plastic Leaded Chip Carrier CY7C006-35AI A65 64-Lead Thin Quad Flat Package Industrial CY7C006-35JI J81 68-Lead Plastic Leaded Chip Carrier
55 CY7C006-55AC A65 64-Lead Thin Quad Flat Package Co mme rcial
CY7C006-55JC J81 68-Lead Plastic Leaded Chip Carrier CY7C006-55AI A65 64-Lead Thin Quad Flat Package Industrial CY7C006-55JI J81 68-Lead Plastic Leaded Chip Carrier
Package
Name Pack age Type
Operating
Range
14
CY7C006 CY7C016
Ordering Information
16K x9 Dual-Port SRAM
Speed
(ns)
15 CY7C016-15AC A80 80-Lead Thin Quad Flat Package Co mme rcial 25 CY7C016-25AC A80 80-Lead Thin Quad Flat Package Co mme rcial
CY7C016-25AI A80 80-Lead Thin Quad Flat Package Industrial
35 CY7C016-35AC A80 80-Lead Thin Quad Flat Package Co mme rcial
CY7C016-35AI A80 80-Lead Thin Quad Flat Package Industrial
55 CY7C016-55AC A80 80-Lead Thin Quad Flat Package Co mme rcial
CY7C016-55AI A80 80-Lead Thin Quad Flat Package Industrial
Document #: 38-00416-B
(continued)
Ordering Code
Package
Name
Pack age Type
Package Diagrams
64-Lead Thin Plastic Quad Flat Pack (14 x 14 x 1.4 mm) A65
Operating
Range
15
51-85046-B
CY7C006 CY7C016
Package Diagrams
(continued)
80-Pin Thin Plastic Quad Flat Pack A80
51-85065-B
68-Lead Plastic Leaded Chip Carrier J81
51-85005-A
© Cypress Semiconductor Corporation, 1999. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it con vey or imply any lice nse under patent or other rights. Cypress Semicondu ctor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
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