CDIDI BZV55C9V1, BZV55C8V2, BZV55C7V5, BZV55C75, BZV55C6V8 Datasheet

	• ZENER DIODES	BZV55 C2V4
	•LEADLESS PACKAGE FOR SURFACE MOUNT	thru
		BZV55 C75
	• DOUBLE PLUG CONSTRUCTION
	• METALLURGICALLY BONDED

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Power Derating: 3.33 mW / °C above +50°C

Forward Voltage: @ 200mA: 1.1 Volts maximum

ELECTRICAL CHARACTERISTICS						@ 25°C, unless otherwise specified.
									MAXIMUM				MAXIMUM
TYPE	ZENER VOLTAGE						DIFFERENTIAL			REVERSE
			(NOTE 1)					RESISTANCE				CURRENT
			V Z @ I	ZT					r diff @ I		Z			IR @ V R
		VOLTS				mA	OHMS			mA			A		VOLTS
	MIN		MAX																MILLIMETERS					INCHES
BZV55 C2V4	2.2		2.6		5		100				5	50			1			DIM	MIN	MAX	MIN MAX
BZV55 C2V7	2.5		2.9		5		100				5	20			1
																		D	1.60		1.70	0.063		0.067
BZV55 C3V0	2.8		3.2		5		95				5	10			1
BZV55 C3V3	3.1		3.5		5		95				5	5			1			F	0.41		0.55	0.016		0.022
BZV55 C3V6	3.4		3.8			5		90			5	5			1			G		3.30	3.70	.130		.146
BZV55 C3V9	3.7		4.1			5		90			5	3			1
																		G1		2.54 REF.		.100	REF.
BZV55 C4V3	4.0		4.6			5		90			5	3			1
																		S		0.03 MIN.		.001	MIN.
BZV55 C4V7	4.4		5.0			5		80			5	3			2
BZV55 C5V1	4.8		5.4			5		60			5	2			2
BZV55 C5V6	5.2		6.0		5		40				5	1			2
BZV55 C6V2	5.8		6.6		5		10				5	3			4		DESIGN DATA
BZV55 C6V8	6.4		7.2			5		15			5	2			4
BZV55 C7V5	7.0		7.9		5		15				5	1			5
BZV55 C8V2	7.7		8.7		5		15				5	.700			5
BZV55 C9V1	8.5		9.6		5		15				5	.500			6		CASE:		DO-213AA			, Hermetically sealed
BZV55 C10	9.4		10.6		5		20				5	.200			7
																	glass case. (MELF, SOD-80, LL34)
BZV55 C11	10.4		11.6		5		20				5	.100		8
BZV55 C12	11.4		12.7		5		25				5	.100		8
BZV55 C13	12.4		14.1		5		30				5	.100		8			LEAD FINISH:				Tin / Lead
BZV55 C15	13.8		15.6		5		30			5		.050		10.5
BZV55 C16	15.3		17.1		5		40				5	.050		11.2			THERMAL RESISTANCE: (							R			O JEC ):
BZV55 C18	16.8		19.1		5		45				5	.050		12.6
BZV55 C20	18.8		21.2		5		55			5		.050		14.0			100 ˚C/W maximum at L = 0 inch
BZV55 C22	20.8		23.3		5		55			5		.050		15.4
BZV55 C24	22.8		25.6		5		70			5		.050		16.8			THERMAL IMPEDANCE: (							Z	O			JX ): 35
BZV55 C27	25.1		28.9		2		80			2		.050		18.9
																	˚C/W maximum
BZV55 C30	28.0		32.0		2		80			2		.050		21.0
BZV55 C33	31.0		35.0		2		80			2		.050		23.1
BZV55 C36	34.0		38.0		2		90				2	.050		25.2			POLARITY:			Diode to be operated with
BZV55 C39	37.0		41.0		2		130			2		.050		27.3
																	the banded (cathode) end positive.
BZV55 C43	40.0		46.0		2		150				2	.050		30.1
BZV55 C47	44.0		50.0		2		170				2	.050		32.9
BZV55 C51	48.0		54.0		2		180				2	.050		35.7			MOUNTING SURFACE			SELECTION:
BZV55 C56	52.0		60.0		2		200			2		.050		39.2
																	The Axial Coefficient of Expansion
BZV55 C62	58.0		66.0		2		215			2		.050		43.4
BZV55 C68	64.0		72.0		2		240				2	.050		47.6			(COE) Of this Device is Approximately
BZV55 C75	70.0		79.0		2		255			2		.050		52.2			+6PPM/°C. The COE of the Mounting
																	Surface System Should Be Selected To
																	Provide A Suitable Match With This
NOTE 1	Nominal Zener voltage is measured with the device junction in thermal																Device.
	equilibrium at an ambient temperature of										25°C +3°C.

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