AUSTN AS58C1001SF-15-IT, AS58C1001SF-15-883C, AS58C1001F-25-IT, AS58C1001F-25-883C, AS58C1001F-20-XT Datasheet

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EEPROM

 

 

Austin Semiconductor, Inc.

 

AS58C1001

 

 

 

 

 

128K x 8 EEPROM

 

 

 

 

 

PIN ASSIGNMENT

 

EEPROM Memory

 

 

 

(Top View)

 

 

AVAILABLE AS MILITARY

 

 

 

 

32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)

 

SPECIFICATIONS

 

l SMD 5962-38267

RDY/BUSY\

1

3 2

Vcc

 

l MIL-STD-883

A16

2

3 1

A15

 

 

 

A14

3

3 0

RES\

 

FEATURES

A12

4

2 9

WE\

 

A7

5

2 8

A13

 

l High speed: 150, 200, and 250ns

 

A6

6

2 7

A8

 

l Data Retention: 10 Years

A5

7

2 6

A9

 

l Low power dissipation, active current (20mW/MHz (TYP)),

A4

8

2 5

A11

 

standby current (100μW(MAX))

A3

9

2 4

OE\

 

A2

1 0

2 3

A10

 

l Single +5V (+10%) power supply

 

A1

1 1

2 2

CE\

 

l Data Polling and Ready/Busy Signals

 

A0

1 2

2 1

I/O 7

 

l Erase/Write Endurance (10,000 cycles in a page mode)

I/O 0

1 3

2 0

I/O 6

 

l Software Data protection Algorithm

I/O 1

1 4

1 9

I/O 5

 

l Data Protection Circuitry during power on/off

I/O 2

1 5

1 8

I/O 4

 

Vss

1 6

1 7

I/O 3

 

l Hardware Data Protection with RES pin

 

 

 

 

 

 

 

 

 

 

 

l Automatic Programming:

 

 

 

 

 

Automatic Page Write: 10ms (MAX)

 

 

 

 

 

128 Byte page size

 

 

 

 

 

GENERAL DESCRIPTION

OPTIONS

MARKINGS

l Timing

 

 

 

 

150ns access

-15

 

 

 

200ns access

-20

 

 

 

250ns access

-25

 

 

l

Packages

 

 

 

 

Ceramic Flat Pack

F

No. 306

 

Radiation Shielded Ceramic FP* SF

No. 305

 

Ceramic SOJ

DCJ

No. 508

l

Operating Temperature Ranges

 

 

 

-Military (-55oC to +125oC)

XT

 

-Industrial (-40oC to +85oC)

IT

*NOTE: Package lid is connected to ground (Vss).

 

 

 

 

 

 

 

 

 

PIN NAME

FUNCTION

 

 

 

A0 to A16

Address input

 

 

 

I/O0 to I/O7

Data input/output

 

 

 

OE\

Output enable

 

 

 

CE\

Chip enable

 

 

 

WE\

Write enable

 

 

 

Vcc

Power supply

 

 

 

Vss

Ground

 

 

 

 

RDY/Busy\

Ready busy

 

 

 

RES\

Reset

 

 

The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS58C1001 is capable or in system electrical Byte and Page reprogrammability.

The AS58C1001 achieves high speed access, low power consumption, and a high level of reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology.

This device has a 128-Byte Page Programming function to make its erase and write operations faster. The AS58C1001 features Data Polling and a Ready/Busy signal to indicate completion of erase and programming operations.

This EEPROM provides several levels of data protection. Hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit during power on and off. Software data protection is implemented using JEDEC Optional Standard algorithm.

The AS58C1001 is designed for high reliability in the most demanding applications. Data retention is specified for 10 years and erase/write endurance is guaranteed to a minimum of 10,000 cycles in the Page Mode.

For more products and information please visit our web site at www.austinsemiconductor.com

 

 

 

AS58C1001

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Rev. 4.0 3/01

1

 

 

 

AUSTN AS58C1001SF-15-IT, AS58C1001SF-15-883C, AS58C1001F-25-IT, AS58C1001F-25-883C, AS58C1001F-20-XT Datasheet

EEPROM

AS58C1001

Austin Semiconductor, Inc.

FUNCTIONAL BLOCK DIAGRAM

Vcc

Vss

OE\

CE\

WE\

RES\

A0

A6

A7

A16

High Voltage Generator

I/O0

I/O7

Ready/Busy

 

 

 

I/O Buffer

and

Input Latch

Control Logic and Timing

Y Gating

Y Decoder

Address

Buffer and

Latch

X Decoder

Memory Array

Data Latch

MODE SELECTION

MODE

CE\

OE\

WE\

RES\

RDY/BUSY\1

I/O

READ

VIL

VIL

VIH

VH

High-Z

DOUT

STANDBY

VIH

X

X

X

High-Z

High-Z

WRITE

VIL

VIH

VIL

VH

High-Z to VOL

DIN

DESELECT

VIL

VIH

VIH

VH

High-Z

High-Z

WRITE

X

X

VIH

X

---

---

INHIBIT

 

 

 

 

 

 

X

VIL

X

X

---

---

 

DATA

VIL

VIL

VIH

VH

VOL

Data Out

POLLING

(I/O7)

PROGRAM

X

X

X

VIL

High-Z

High-Z

Notes:

1. RDY/Busy\ output has only active LOW VOL and HIGH impedance state. It can not go to HIGH (VOH) state.

 

 

 

AS58C1001

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Rev. 4.0 3/01

2

 

 

 

EEPROM

AS58C1001

Austin Semiconductor, Inc.

FUNCTIONAL DESCRIPTION

AUTOMATIC PAGE WRITE

The Page Write feature allows 1 to 128 Bytes of data to be written into the EEPROM in a single cycle and allows the undefined data within 128 Bytes to be written corresponding to the undefined address (A0 to A6). Loading the first Byte of data, the data load window of 30μs opens for the second. In the same manner each additional Byte of data can be loaded within 30μs. In case CE\ and WE\ are kept high for 100μs after data input, the EEPROM enters erase and write automatically and only the input data can be written into the EEPROM. In Page mode the data can be written and accessed 104 times per page, and in Byte mode 103 times per Byte.

DATA\ POLLING

Data\ Polling allows the status of the EEPROM to be determined. If the EEPROM is set to Read mode during a Write cycle, and inversion of the last Byte of data to be loaded outputs from I/O, to indicate that the EEPROM is performing a Write operation.

PROGRAMMING/ERASE

The 58C1001 does NOT employ a BULK-erase function. The memory cells can be programmed ‘0’ or ‘1’. A write cycle performs the function of erase & write on every cycle with the erase being transparent to the user. The internal erase data state is considered to be ‘1’. To program the memory array with background of ALL 0’s or All 1’s, the user would program this data using the page mode write operation to program all 1024 128-byte pages.

DATA PROTECTION

To protect the data during operation and power on/off, the AS58C1001 has:

1. Data protection against Noise on Control Pins (CE\, OE\, WE\) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the AS58C1001 has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins.

WRITE PROTECTION

(1)Noise protection: Noise on a write cycle will not act as a trigger with a WE\ pulse of less than 20ns.

(2)Write inhibit: Holding OE\ low, WE\ high or CE\

high, inhibits a write cycle during power on/off.

WE\ AND CE\ PIN OPERATION

During a write cycle, addresses are latched by the falling edge of WE\ or CE\, and data is latched by the rising edge of WE\ or CE\.

WRITE/ERASE ENDURANCE AND DATA RETENTION

The endurance with page programming is 104 cycles (1% cumulative failure rate) and the data retention time is more than 10 years when a device is programmed less than 104 cycles.

RDY/Busy\ SIGNAL

RDY/Busy\ signal also allows status of the EEPROM to be determined. The RDY/Busy\ signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the end of the write cycle, the RDY/Busy\ signal changes state to high impedance. This allows many 58C1001 devices RDY/Busy\ signal lines to be wired-OR together.

 

 

 

AS58C1001

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Rev. 4.0 3/01

3

 

 

 

EEPROM

AS58C1001

Austin Semiconductor, Inc.

(EXAMPLE)

Vcc

 

RES\

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

*unprogrammable

*unprogrammable

 

 

 

 

 

 

 

 

 

 

 

FUNCTIONAL DESCRIPTION (continued)

 

 

 

 

Write Data

 

 

 

 

 

Write Address (Normal Data Input)

DATA PROTECTION (continued)

 

 

 

 

 

 

2. Data protection at Vcc on/off.

When RES\ is low, the EEPROM cannot be erased and programmed. Therefore, data can be protected by keeping RES\ low when Vcc is switched. RES\ should be high during programming because it does not provide a latch function. When Vcc is turned on or off, noise on the control pins generated by external circuits (CPU, etc.) may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable, standby or readout state by using a CPU reset signal to RES\ pin.

In addition, when RES\ is kept high at Vcc on/off timing, the input level of control pins (CE\, OE\, WE\) must be held as CE\=Vcc or OE\=LOW or WE\=Vcc level.

5555

AA

2AAA

55

5555

A0

The Software data protection mode can be cancelled by inputting the following 6 Bytes. This changes the AS58C1001 to the Non-Protection mode, for normal operation.

Address

Data

3. Software Data Protection

To protect against unintentional programming caused by noise generated by external circuits, AS58C1001 has a Software data protection function. To initate Software data protection mode, 3 bytes of data must be input, followed by a dummy write cycle of any address and any data byte. This exact sequence switches the device into protection mode. This 4th cycle during write is required to initiate the SDP and physically writes the address and data. While in SDP the entire array is protected in which writes can only occur if the exact SDP sequence is re-executed or the unprotect sequence

5555

AA

2AAA

55

5555

80

5555

AA

2AAA

55

is executed.

20

5555

 

 

 

AS58C1001

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Rev. 4.0 3/01

4

 

 

 

EEPROM

AS58C1001

Austin Semiconductor, Inc.

ABSOLUTEMAXIMUMRATINGS*

 

Voltage on Vcc Supply Relative to Vss................

-0.5V to +7.0V1

Voltage on any pin Relative to Vss.......................

-0.6V to +7.0V1

Storage Temperature ............................................

-65°C to +150°C

Operating Temperature Range.............................

-55oC to +125oC

Soldering Temperature Range...............................................

260oC

Maximum Junction Temperature**....................................

+150°C

Power Dissipation...................................................................

1.0W

*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow.

ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS

(-55oC < TA < 125oC; Vcc = 5V +10%)

PARAMETER

CONDITION

SYMBOL

MIN

MAX

UNITS

NOTES

Input High (Logic 1) Voltage

 

VIH

2.2

VCC + 0.3V

V

9

Input Low (Logic 0) Voltage3

 

VIL

-0.3

0.8

V

2

Input Voltage (RES\ Pin)

 

VH

Vcc-0.5

VCC +1.0

V

 

Input Leakage Current4

OV < VIN < Vcc

ILI

-2

2

μΑ

4

Output Leakage Current

Output(s) disabled, OV < VOUT < Vcc

ILO

-2

2

μΑ

 

Output High Voltage

IOH = -400 μA

VOH

2.4

 

V

 

Output Low Voltage

IOL = 2.1 mA

VOL

 

0.4

V

 

 

 

 

 

MAX

 

 

 

PARAMETER

CONDITIONS

SYM

-15

-20

-25

UNITS

NOTES

 

IOUT=OmA, Vcc = 5.5V

 

20

20

20

 

 

 

Cycle=1μS, Duty=100%

 

 

 

Power Supply Current:

 

 

 

 

 

 

 

ICC3

 

 

 

mA

 

Operating

IOUT=OmA, Vcc = 5.5V

65

55

50

 

 

 

 

 

 

Cycle=MIN, Duty=100%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE\=Vcc, Vcc = 5.5V

ICC1

350

350

350

μA

 

Power Supply Current:

 

 

 

 

 

 

 

Standby

 

 

 

 

 

 

 

CE\=VIH, Vcc = 5.5V

ICC2

3

3

3

mA

 

 

 

 

 

 

 

 

 

 

 

CAPACITANCE

PARAMETER

CONDITIONS

SYMBOL

MAX

UNITS

NOTES

Input Capacitance

TA = 25oC, f = 1MHz

CIN

6

pF

 

Output Capactiance

VIN = 0

Co

12

pF

 

 

 

 

 

 

 

 

 

 

 

 

AS58C1001

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Rev. 4.0 3/01

5

 

 

 

EEPROM

AS58C1001

Austin Semiconductor, Inc.

AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION

(-55oC < TC < 125oC; Vcc = 5V +10%)

Test Conditions

l Input Pulse Levels:

 

0.0V to 3.0V

 

 

 

 

 

 

 

 

 

 

l Input rise and fall times:

 

< 20ns

 

 

 

 

 

 

 

 

 

 

l Output Load:

 

1 TTL Gate +100pF (including scope and jig)

 

 

 

 

 

 

 

l Reference levels for measuring timing:

1.5V,1.5V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

! ! "

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

& ! " )

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

#

 

 

#

 

 

#

 

 

 

 

$% ! & '

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC ELECTRICAL CHARACTERISTICS FOR SOFTWARE DATA PROTECTION CYCLE OPERATION

PARAMETER

SYMBOL

MIN

MAX

UNITS

Byte Load Cycle Time

tBLC

0.55

30

μS

Write Cycle Time

tWC

10

---

mS

AC ELECTRICAL CHARACTERISTICS FOR DATA\ POLLING OPERATION

PARAMETER

SYMBOL

MIN

MAX

UNITS

Output Enable Hold Time

tOEH

0

---

ns

Output Enable to Write Setup Time

tOES

0

---

ns

Write Start Time

tDW

150

---

ns

Write Cycle Time

tWC

---

10

ms

 

 

 

AS58C1001

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

Rev. 4.0 3/01

6

 

 

 

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